JP2796975B2 - Liquid raw material vaporizer - Google Patents
Liquid raw material vaporizerInfo
- Publication number
- JP2796975B2 JP2796975B2 JP30026488A JP30026488A JP2796975B2 JP 2796975 B2 JP2796975 B2 JP 2796975B2 JP 30026488 A JP30026488 A JP 30026488A JP 30026488 A JP30026488 A JP 30026488A JP 2796975 B2 JP2796975 B2 JP 2796975B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- raw material
- gas
- vaporization tank
- vaporization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J7/00—Apparatus for generating gases
- B01J7/02—Apparatus for generating gases by wet methods
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は、減圧化学的気相成長法(以下減圧CVD法と
いう)において用いられる液体原料を気化し供給する装
置に関する。Description: TECHNICAL FIELD The present invention relates to an apparatus for vaporizing and supplying a liquid source used in a low pressure chemical vapor deposition (hereinafter, referred to as a low pressure CVD).
(従来の技術) CVD法において用いられる液体原料を気化する一般的
な方法としてはバブラー法がある。(Prior Art) There is a bubbler method as a general method for vaporizing a liquid raw material used in a CVD method.
この方法は気密容器(バブラー)に液体原料を入れ、
この液体の中に輸送気体(キャリアガス)を吹き込んで
バブリングによって発生した原料蒸気をキャリアガスと
ともにCVD装置の反応室に導入する方法である。In this method, a liquid material is placed in an airtight container (bubbler),
In this method, a transport gas (carrier gas) is blown into the liquid, and the raw material vapor generated by bubbling is introduced into a reaction chamber of a CVD apparatus together with the carrier gas.
しかし、この方法はバブラー内の液体原料の液面の高
さの変化によって原料蒸気の輸送量が変化する欠点があ
る。However, this method has a drawback that the transport amount of the raw material vapor changes due to a change in the level of the liquid raw material in the bubbler.
また、バブリングの方法によっては原料蒸気に原料霧
滴が混合され輸送される欠点がある。Further, depending on the bubbling method, there is a disadvantage that the raw material mist is mixed with the raw material vapor and transported.
さらに、この方法は断熱膨脹による気体の温度の温度
低下により輸送管の中で原料が結露もしくは霧氷化する
欠点がある。Further, this method has a disadvantage that the raw material is dewed or fog-ized in the transport pipe due to a decrease in gas temperature due to adiabatic expansion.
バブラー等の原料容器から直接に気化させる場合、バ
ブラー内、CVD装置の反応室内の圧力差の絶対値が小さ
いため、一方向の流れは不充分で逆向する成分、例え
ば、反応室で生成した反応生成物、酸化物ダスト、液滴
等により液体原料が汚染される欠点をもっている。When evaporating directly from a raw material container such as a bubbler, the absolute value of the pressure difference in the reaction chamber of the CVD device inside the bubbler is small, so that the flow in one direction is insufficient and the component flowing in the opposite direction, for example, the reaction generated in the reaction chamber It has the disadvantage that the liquid raw material is contaminated by products, oxide dust, droplets and the like.
また、液体原料を気化する他の方法として、液体原料
が気化するに充分な温度まで加熱した気密な気化槽の中
に液体をノズルから霧状に霧化、あるいは超音波は用い
て霧化等を行なって導入して気化し、キャリアガスとと
もにCVD装置の反応室に導入する気化槽を用いる方法が
ある。In addition, as another method of vaporizing a liquid material, a liquid is atomized from a nozzle into a mist in a gas-tight vaporization tank heated to a temperature sufficient to vaporize the liquid material, or atomized using ultrasonic waves. There is a method of using a vaporization tank that is introduced and vaporized, and is introduced into a reaction chamber of a CVD apparatus together with a carrier gas.
この方法では原料液体が霧化しているため蒸発効率が
良い利点であるが、しかし、この方法を減圧下で実施す
る場合、特に10KPa附近あるいはそれ以下の減圧状態で
実施する場合においては液滴の断熱膨脹の結果生じる液
化もしくは固化とガスの流速の増加による滞在時間の減
少により、気化槽内で液滴を完全に除去することは困難
である。This method has the advantage that the evaporation efficiency is good because the raw material liquid is atomized.However, when this method is performed under reduced pressure, particularly when the method is performed at a reduced pressure close to 10 KPa or lower, droplets are not easily generated. Due to the liquefaction or solidification resulting from the adiabatic expansion and the reduced residence time due to the increased gas flow rate, it is difficult to completely remove the droplets in the vaporization vessel.
原料液滴が気化せずに反応室に導入された場合は、成
膜した膜の均一性が失なわれたり、原料成分の酸化物の
ようなダストが発生する等の欠点を生ずる。If the raw material droplets are introduced into the reaction chamber without being vaporized, defects such as loss of uniformity of the formed film and generation of dust such as oxides of raw material components occur.
本発明者等は減圧CVD法において用いられる原料液体
を霧化させずに気化し、減圧CVD装置の反応室に原料の
霧滴を導入せず制御された流量の気体のみを導入する気
化方法として、気化槽に液体原料を導入し気化槽外周の
ヒーター等の発熱体でおだやかに加熱して気化する方法
とその装置を先の特願昭63−110691号、特願昭63−1265
29号、特願昭63−199698号で出願した。The present inventors vaporize the raw material liquid used in the reduced pressure CVD method without atomizing it, and introduce only a controlled flow rate gas without introducing mist droplets of the raw material into the reaction chamber of the reduced pressure CVD apparatus. The method of introducing a liquid raw material into a vaporization tank and gently heating it with a heating element such as a heater on the outer periphery of the vaporization tank to vaporize the liquid and its apparatus are described in Japanese Patent Application Nos. 63-110691 and 63-1265.
No. 29 and Japanese Patent Application No. 63-199698.
本発明はこれらの発明の改良に関する。 The present invention relates to improvements of these inventions.
(解決しようとする問題点) 液体原料を輸送する場合、アルゴン、ヘリウム等の不
活性ガスで加圧し輸送管中を輸送することが多い。この
場合、特に二種以上の液体原料を混合した場合、輸送管
中の液体原料の中にこれらのガスや低沸点原料の一部が
気化し気泡を生ずる。(Problems to be Solved) When transporting a liquid raw material, it is often the case that the raw material is pressurized with an inert gas such as argon or helium and transported through a transport pipe. In this case, particularly when two or more types of liquid raw materials are mixed, some of these gases and low-boiling raw materials are vaporized in the liquid raw materials in the transport pipe to generate bubbles.
この気泡のため液体原料の液量が変化し液流が一定で
なくなる。Due to these bubbles, the liquid amount of the liquid raw material changes, and the liquid flow is not constant.
また、気泡を含む原料液体が輸送管から気化槽に導入
されたとき気泡は消失するが、その時原料液体の霧滴を
発生する。Further, when the raw material liquid containing bubbles is introduced into the vaporization tank from the transport pipe, the bubbles disappear, but at that time, mist droplets of the raw material liquid are generated.
本発明はこれらの欠点を除去するための気化装置を提
供しようとするものである。The present invention seeks to provide a vaporizer for eliminating these disadvantages.
(問題を解決するための手段) 本発明は、気化槽への液体原料導入部に液体原料中に
含まれる気泡気体と原料液体を分離する空間を設け、該
空間で分離された気泡気体と原料液体は気化槽内の別々
の経路をたどり、原料液体は気化されたのち、気化槽内
部で再び合流し、気体流出口Bから流出させるものであ
る。(Means for Solving the Problem) According to the present invention, a space for separating a bubble gas and a raw material liquid contained in a liquid raw material is provided in a liquid raw material introduction portion to a vaporization tank, and the bubble gas separated from the raw material liquid in the space is provided. The liquid follows different paths in the vaporization tank, and the raw material liquid is vaporized, then merges again in the vaporization tank and flows out from the gas outlet B.
本発明を第1図にしたがって詳細に説明する。 The present invention will be described in detail with reference to FIG.
液体原料導入管3から導入された気泡を含んだ液体は
気液分離部Eの空間で液体と気体に分離され、液体は気
化槽の凹凸の内壁を濡らしながら壁面に添って螺旋上に
落下する。気化槽外周のヒーター等の発熱体6−1、6
−2の温度を上げ壁面を加熱し、壁面から液体をおだや
かに気化する。The liquid containing bubbles introduced from the liquid material introduction pipe 3 is separated into a liquid and a gas in the space of the gas-liquid separation section E, and the liquid falls on the spiral along the wall while wetting the uneven inner wall of the vaporization tank. . Heating elements 6-1 and 6 such as heaters around the vaporization tank
The temperature of -2 is raised to heat the wall surface, and the liquid is gently vaporized from the wall surface.
気化した原料気体はキャリアガス導入管4から導入さ
れたアルゴン、ヘリウム等のキャリアガスと混合し気体
導出管2から導出し、CVD装置の反応室に導入される。The vaporized raw material gas is mixed with a carrier gas such as argon or helium introduced from a carrier gas introduction pipe 4, and is then led out from a gas outlet pipe 2 and introduced into a reaction chamber of a CVD apparatus.
キャリアガス導入管4から導入されるキャリアガスは
気化槽内を渦巻状に上昇し気体導出管2に入ることが好
ましい。It is preferable that the carrier gas introduced from the carrier gas introduction pipe 4 spirally rises in the vaporization tank and enters the gas outlet pipe 2.
一方、液体原料中に含まれる気泡を形成していた気体
は気液分離部Eで背圧のため突出するが、その時液体原
料の霧滴を含んでいる。しかし、この霧滴を含んだ気体
は突出した時、気液分離部Eの壁に衝突し霧滴は壁に吸
着され、霧滴を含まない気体のみが気体流出口Dから流
出しキャリアガスと合流する。On the other hand, the gas that has formed bubbles contained in the liquid material protrudes due to the back pressure in the gas-liquid separation unit E, but contains mist droplets of the liquid material at that time. However, when the gas containing the atomized droplets protrudes, it collides with the wall of the gas-liquid separation unit E, and the atomized droplets are adsorbed on the wall, and only the gas not including the atomized droplets flows out of the gas outlet D and is mixed with the carrier gas. Join.
このように、気液分離部Eで液体原料と気泡が分離さ
れ、これらが別々の経路をたどるため濡れ壁への液体原
料の供給をより連続的にし、液体原料の気化量をより一
定に保つことができる。In this manner, the liquid material and the air bubbles are separated in the gas-liquid separation section E, and follow the different paths, so that the supply of the liquid material to the wet wall is made more continuous, and the vaporization amount of the liquid material is kept more constant. be able to.
また、気化槽の内壁に螺旋状の凹凸を設けることによ
って液体原料導入管3から導入された液体原料は気化槽
の内壁を濡らしながら螺旋状に流れ下りるが、外周の発
熱体は気化槽の内壁を均一に加熱しており、濡れ壁面積
が大きいため原料液体は気化槽の底部に至るまでの間に
気化し、気化槽の底部に液体として溜まることはない。
また、このような気化過程によっているため原料液体が
突沸を起こすようなこともない。In addition, by providing spiral irregularities on the inner wall of the vaporization tank, the liquid raw material introduced from the liquid raw material introduction pipe 3 flows down spirally while wetting the inner wall of the vaporization tank. Is uniformly heated, and since the wetted wall area is large, the raw material liquid is vaporized before reaching the bottom of the vaporization tank, and does not accumulate as a liquid at the bottom of the vaporization tank.
Further, since the vaporization process is performed, the raw material liquid does not cause bumping.
このような螺旋状の凹凸の気化槽内壁を設けることに
よって、液体原料の濡れ面積が大きくなりおだやかな蒸
発をするに充分な伝熱面積を得ることができる。By providing the inner wall of the vaporization tank having such a spiral unevenness, the wet area of the liquid raw material is increased, and a heat transfer area sufficient for gentle evaporation can be obtained.
本発明になる気化槽の材質は使用する液体原料の物性
によって定められるが、テトラエトキシシランのような
腐食性の液体の場合はステンレスが好ましい。The material of the vaporization tank according to the present invention is determined by the physical properties of the liquid raw material used. In the case of a corrosive liquid such as tetraethoxysilane, stainless steel is preferable.
キャリアガスはアルゴン、ヘリウム等の不活性ガス、
窒素等が使用されるが、気化槽に入るまでに一定温度に
予備加熱されることが好ましい。Carrier gas is an inert gas such as argon or helium,
Nitrogen or the like is used, but it is preferable to preheat to a certain temperature before entering the vaporization tank.
気化槽内壁の螺旋状の溝は多数段で等高状の溝でもよ
い。The spiral groove on the inner wall of the vaporization tank may be a multi-stage groove having an equal height.
(発明の効果) 本発明によれば、気泡を含む原料液体が液体原料導入
管から気化槽に導入され気泡を消失した時原料液体の霧
滴を発生させるが、この霧滴は気化槽の内壁を伝わって
原料液体の方に戻すことができ、霧滴をCVD装置の反応
室へ輸送しない特徴がある。(Effects of the Invention) According to the present invention, when the raw material liquid containing bubbles is introduced into the vaporization tank from the liquid raw material introduction pipe and the bubbles disappear, mist droplets of the raw material liquid are generated. , And can be returned to the raw material liquid, and the mist droplet is not transported to the reaction chamber of the CVD apparatus.
また、気液分離部で液体原料とその中に含まれる気泡
が分離され、別々の経路をたどるため液体原料の気化量
すなわちCVD装置の反応室への原料気体の供給量をより
一定に保つことができる特徴がある。In addition, the liquid material and the bubbles contained therein are separated in the gas-liquid separation section, and the vaporization amount of the liquid material, that is, the supply amount of the raw material gas to the reaction chamber of the CVD apparatus, is kept more constant because the liquid material and the bubbles are separated. There is a feature that can be.
さらに、気化槽の内壁に螺旋状の凹凸を設けることに
よって減圧CVD方において用いられる原料液体を霧化さ
せずにおだやかに気化槽の内壁面から気化させることが
でき、その反応室に原料の液滴を導入することがない特
徴がある。Furthermore, by providing spiral irregularities on the inner wall of the vaporization tank, the raw material liquid used in the low-pressure CVD method can be gently vaporized from the inner wall surface of the vaporization tank without being atomized. There is a feature that does not introduce drops.
第1図は本発明になる液体原料気化装置の断面図であ
る。 図において、1は気化槽、2は原料気体とキャリアガス
の混合ガスの導出管、3は液体原料導入管、4はキャリ
アガス導入管、5は螺旋状の凹凸を設けた気化槽内壁、
6−1、6−2は気化槽の外周に巻いた発熱体、Aは液
体原料注入口、Bは原料ガスとキャリアガスの混合ガス
の流出口、Cはキャリアガス導入口、Dは液体原料中に
含まれる気泡気体の流出口、Eは液体原料中に含まれる
気泡と液体を分離する気液分離部である。FIG. 1 is a sectional view of a liquid raw material vaporizer according to the present invention. In the figure, 1 is a vaporization tank, 2 is a pipe for introducing a mixed gas of a raw material gas and a carrier gas, 3 is a liquid raw material introducing pipe, 4 is a carrier gas introducing pipe, 5 is an inner wall of a vaporizing tank provided with spiral irregularities,
6-1 and 6-2 are heating elements wound around the outer periphery of the vaporization tank, A is a liquid material inlet, B is an outlet for a mixed gas of a material gas and a carrier gas, C is a carrier gas inlet, and D is a liquid material. An outlet E for the bubble gas contained therein is a gas-liquid separation section for separating bubbles and liquid contained in the liquid raw material.
Claims (1)
体流出口を備えた密閉容器において、当該容器への液体
原料導入部に液体原料中に含まれる気泡気体と原料液体
を分離する空間を設け、該空間で分離された気泡気体と
原料液体は気化槽内の別々の経路をたどり、原料液体は
気化されたのち、気化槽内部で再び合流し、気体流出口
Bから流出することを特徴とする液体原料気化装置。In a closed container provided with a liquid material inlet, a carrier gas inlet and a gas outlet, a space for separating a gaseous gas contained in the liquid material and the material liquid is provided in a liquid material introduction portion into the container. The gas bubbles and the raw material liquid separated in the space follow separate paths in the vaporization tank. After the raw material liquid is vaporized, the raw material liquids merge again inside the vaporization tank and flow out from the gas outlet B. Liquid raw material vaporizer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30026488A JP2796975B2 (en) | 1988-11-28 | 1988-11-28 | Liquid raw material vaporizer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30026488A JP2796975B2 (en) | 1988-11-28 | 1988-11-28 | Liquid raw material vaporizer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02145768A JPH02145768A (en) | 1990-06-05 |
JP2796975B2 true JP2796975B2 (en) | 1998-09-10 |
Family
ID=17882693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP30026488A Expired - Fee Related JP2796975B2 (en) | 1988-11-28 | 1988-11-28 | Liquid raw material vaporizer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2796975B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101283587B1 (en) * | 2010-04-06 | 2013-07-08 | (주)지오엘리먼트 | Vaporizing device and Method of vaporizing using the same |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW322602B (en) * | 1996-04-05 | 1997-12-11 | Ehara Seisakusho Kk | |
US6195504B1 (en) | 1996-11-20 | 2001-02-27 | Ebara Corporation | Liquid feed vaporization system and gas injection device |
FR2800754B1 (en) * | 1999-11-08 | 2003-05-09 | Joint Industrial Processors For Electronics | DEVICE FOR EVAPORATING A CHEMICAL VAPOR DEPOSIT SYSTEM |
KR100443290B1 (en) * | 2002-05-02 | 2004-08-09 | 주성엔지니어링(주) | Vaporizer for liquid source |
JP2006202965A (en) * | 2005-01-20 | 2006-08-03 | Lintec Co Ltd | Vaporizing apparatus and vaporizing structure |
US8555809B2 (en) * | 2010-01-14 | 2013-10-15 | Rohm And Haas Electronic Materials, Llc | Method for constant concentration evaporation and a device using the same |
-
1988
- 1988-11-28 JP JP30026488A patent/JP2796975B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101283587B1 (en) * | 2010-04-06 | 2013-07-08 | (주)지오엘리먼트 | Vaporizing device and Method of vaporizing using the same |
Also Published As
Publication number | Publication date |
---|---|
JPH02145768A (en) | 1990-06-05 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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LAPS | Cancellation because of no payment of annual fees |