KR100668374B1 - Vaporizer - Google Patents

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KR100668374B1
KR100668374B1 KR1020000062832A KR20000062832A KR100668374B1 KR 100668374 B1 KR100668374 B1 KR 100668374B1 KR 1020000062832 A KR1020000062832 A KR 1020000062832A KR 20000062832 A KR20000062832 A KR 20000062832A KR 100668374 B1 KR100668374 B1 KR 100668374B1
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raw material
reaction raw
liquid reaction
supply pipe
material supply
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KR1020000062832A
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KR20020032000A (en
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한영기
김동현
오기영
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주성엔지니어링(주)
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명에 따른 기화기는, 액상반응원료 공급관; 액상반응원료 공급관의 내경보다 작은 직경의 분사구를 가지며 액상반응원료 공급관에 결합되는 분사판; 액상반응원료 공급관의 내경보다 큰 내경을 가지며 일단이 분사판과 결합되는 기체흐름관; 및 분사구를 통하여 분사되는 상기 액상원료를 기화시키는 가열수단이 구비되는 것을 특징으로 한다. 본 발명에 의하면, 상기 기체흐름관으로의 액체원료의 공급은 주로 상기 분사구의 직경에 의존하게 된다. 따라서, 상기 액상반응원료 공급관과 상기 분사판의 용접 부위에서 용접 물질이 다소 녹아 관 내부로 들어가더라도 상기 기체흐름관으로의 액상반응원료 공급흐름은 큰 영향을 받지 않게 된다. Vaporizer according to the present invention, the liquid reaction raw material supply pipe; An injection plate having a nozzle having a diameter smaller than an inner diameter of the liquid reaction raw material supply pipe and coupled to the liquid reaction raw material supply pipe; A gas flow pipe having an inner diameter larger than that of the liquid reaction raw material supply pipe and having one end coupled to the injection plate; And heating means for vaporizing the liquid raw material injected through the injection hole. According to the present invention, the supply of the liquid raw material to the gas flow pipe is mainly dependent on the diameter of the injection port. Therefore, even if the welding material is slightly melted in the welding portion of the liquid reaction raw material supply pipe and the injection plate and enters the inside of the pipe, the liquid reaction raw material supply flow to the gas flow pipe is not significantly affected.

기화기, 분사판, MOCVD, BSTCarburetor, Jet Plate, MOCVD, BST

Description

기화기 {Vaporizer} Vaporizer {Vaporizer}             

도 1은 종래의 기화기를 설명하기 위한 개략도; 1 is a schematic view for explaining a conventional vaporizer;

도 2는 본 발명에 따른 기화기를 설명하기 위한 개략도; 2 is a schematic view for explaining a vaporizer according to the present invention;

도 3a 및 도 3b는 도 1의 기화기와 도 2의 기화기를 사용하여 BST 박막을 형성함으로써 재현성을 비교 테스트한 결과 그래프를 각각 나타낸 것이다. 3A and 3B show graphs of comparative test results of reproducibility by forming a BST thin film using the vaporizer of FIG. 1 and the vaporizer of FIG. 2, respectively.

< 도면의 주요 부분에 대한 참조번호 및 참조부호의 설명 ><Description of reference numerals and reference numerals for the main parts of the drawings>

110: 액상반응원료 공급관 120, 120': 분사판110: liquid reaction raw material supply pipe 120, 120 ': injection plate

130: 기체흐름관 130a: 제1 흐름관130: gas flow pipe 130a: first flow pipe

130b: 제2 흐름관 h, h':분사구
130b: second flow pipe h, h ': injection port

본 발명은 기화기에 관한 것으로서, 특히 액상반응원료를 기화시켜 이를 CVD공정이 수행되는 반응기로 공급하는 기화기에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vaporizer, and more particularly, to a vaporizer that vaporizes a liquid reaction raw material and supplies it to a reactor in which a CVD process is performed.

CVD 공정을 수행하기 위하여는 액상반응원료를 기화시키는 과정이 종종 필요 하다. 특히, MOCVD법에 사용되는 대부분의 금속-유기물 원료(Metal-Organic Source)는 상온에서 용액성 액체이기 때문에 이러한 기화 과정이 특히 필요하다. 따라서, 액상반응원료를 기화시켜 이를 CVD 공정이 수행되는 반응기로 공급하는 기화기에 관하여 많은 연구가 진행되고 있다. In order to perform the CVD process, a process of vaporizing a liquid phase reaction material is often required. In particular, since most metal-organic sources used in the MOCVD method are solution liquids at room temperature, this vaporization process is particularly necessary. Therefore, much research has been conducted on a vaporizer which vaporizes a liquid phase reaction material and supplies it to a reactor in which a CVD process is performed.

도 1은 종래의 기화기를 설명하기 위한 개략도이다. 1 is a schematic diagram for explaining a conventional vaporizer.

도 1을 참고하면, 액상반응원료는 저장조(미도시)에 저장되며, 주공급관(미도시)은 상기 저장조에 연결된다. 액상반응원료 공급관(110)은 상기 주공급관에 용접되어 연결되며 1.54mm의 내경을 갖는다. 상기 저장조에 저장되는 액상반응원료는 상기 주공급관 및 액상반응원료 공급관(110)을 순차적으로 거쳐 기체흐름관(130)으로 공급된다. 기체흐름관(130)은 제1 흐름관(130a)과 제2 흐름관(130b)으로 구성된다. 제2 흐름관(130b)은 내경이 4.57mm인 제1 흐름관(130a)에서 연장되며 제1 흐름관(130a)보다 더 큰 10.16 mm의 내경을 갖는다. Referring to Figure 1, the liquid reaction raw material is stored in a reservoir (not shown), the main supply pipe (not shown) is connected to the reservoir. Liquid reaction raw material supply pipe 110 is welded to the main supply pipe is connected and has an internal diameter of 1.54mm. The liquid reaction raw materials stored in the storage tank are sequentially supplied to the gas flow pipe 130 through the main supply pipe and the liquid reaction raw material supply pipe 110. The gas flow pipe 130 is composed of a first flow pipe 130a and a second flow pipe 130b. The second flow tube 130b extends from the first flow tube 130a having an inner diameter of 4.57 mm and has an inner diameter of 10.16 mm larger than the first flow tube 130a.

액상반응원료 공급관(110)과 제1 흐름관(130a)은 내경이 서로 다르기 때문에 이들을 서로 직접 연결시킬 수는 없다. 따라서, 액상반응원료 공급관(110)과 제1 흐름관(130a)을 서로 연결시키기 위한 매개체로서 분사판(120)이 설치된다. 분사판(120)의 가운데에는 액상반응원료 공급관(110)의 내경과 동일한 1.54mm의 직경을 가지는 분사구(h)가 뚫려져 있으며, 분사구(h)와 액상반응원료 공급관(110)이 서로 합치되도록 용접 결합된다. 제1 흐름관(130a)도 액상반응원료 공급관(110)과 마주 보도록 분사판(120)에 용접 결합된다. 기체흐름관(130)의 둘레에는 기체흐름관(130)을 가열시키기 위한 가열수단(미도시)이 설치된다.  Liquid reaction raw material supply pipe 110 and the first flow pipe (130a) because the inner diameter is different from each other can not be directly connected to each other. Accordingly, the injection plate 120 is installed as a medium for connecting the liquid reaction raw material supply pipe 110 and the first flow pipe 130a to each other. In the middle of the injection plate 120, a hole (h) having a diameter of 1.54 mm equal to the inner diameter of the liquid reaction raw material supply pipe 110 is drilled, and the injection hole (h) and the liquid reaction raw material supply pipe (110) coincide with each other. Welded together. The first flow pipe (130a) is also welded to the injection plate 120 to face the liquid reaction raw material supply pipe (110). A heating means (not shown) for heating the gas flow tube 130 is installed around the gas flow tube 130.                         

액상반응원료 공급관(110)에 흐르는 액상반응원료는 분사구(h)를 통하여 제1 흐름관(130a)으로 분사된다. 기체흐름관(130)은 상기 가열수단에 의해 가열되고 있는 상태이므로, 액상반응원료가 분사구(h)를 통하여 제1 흐름관(130a)으로 분사되는 순간부터 액상반응원료는 기화하기 시작한다. 제1 흐름관(130a)의 내경이 분사구(h) 직경보다 훨씬 크기 때문에 분사구(h)를 통하여 제1 흐름관(130a)으로 분사된 액상반응원료는 주위로 급격히 퍼지게 된다. 따라서, 기화가 매우 활발하게 일어난다. The liquid phase reaction raw material flowing in the liquid phase reaction raw material supply pipe 110 is injected into the first flow pipe 130a through the injection hole h. Since the gas flow tube 130 is being heated by the heating means, the liquid phase reaction raw material starts to vaporize from the moment when the liquid phase reaction raw material is injected into the first flow tube 130a through the injection hole h. Since the inner diameter of the first flow pipe (130a) is much larger than the diameter of the injection hole (h), the liquid reaction raw material injected into the first flow pipe (130a) through the injection hole (h) is rapidly spread around. Therefore, vaporization takes place very actively.

상술한 종래의 기화기에 따르면, 액상반응원료 공급관(110)의 일단은 상기 주공급관에 용접 결합되며, 타단은 분사판(120)에 용접 결합된다. 따라서, 용접 시에 용접 물질이 관의 내부로 녹아 들어가게 되어 액상반응원료의 공급 흐름에 영향을 미칠 뿐만 아니라 박막증착의 재현성도 떨어지게 된다. 따라서, 기화기를 여러대 만들 경우 각 기화기 마다 액상반응원료 공급 및 이로 인한 기화 특성이 달라지게 되므로, 종래의 기화기를 양산공정에 적용하기에는 매우 부적합하다. 더욱이, 이러한 현상을 방지하기 위하여 부품을 교환하거나 또는 다시 수리를 할 경우에는 박막증착의 재현성이 더욱 떨어지게 된다.
According to the conventional vaporizer described above, one end of the liquid reaction raw material supply pipe 110 is welded to the main supply pipe, the other end is welded to the injection plate 120. Therefore, the welding material is melted into the tube during welding, not only affect the feed flow of the liquid reaction raw material but also reduce the reproducibility of thin film deposition. Therefore, in the case of making several vaporizers, since the liquid phase feed material and the vaporization characteristics thereof are changed for each vaporizer, it is very unsuitable to apply the conventional vaporizer to the mass production process. Moreover, the reproducibility of thin film deposition is further deteriorated when parts are replaced or repaired in order to prevent this phenomenon.

따라서, 본 발명이 이루고자 하는 기술적 과제는, 종래 기화기의 구조를 개량하여 박막증착 재현성이 확보되는 기화기를 제공하는 데 있다.
Accordingly, the present invention has been made in an effort to provide a vaporizer in which a thin film deposition reproducibility is ensured by improving the structure of a conventional vaporizer.

상기 기술적 과제를 달성하기 위한 본 발명에 따른 기화기는: 액상반응원료 공급관; 상기 액상반응원료 공급관의 내경보다 작은 직경의 분사구를 가지며 상기 액상반응원료 공급관에 결합되는 분사판; 상기 액상반응원료 공급관의 내경보다 큰 내경을 가지며 일단이 상기 분사판과 결합되는 기체흐름관; 및 상기 분사구를 통하여 분사되는 상기 액상원료를 기화시키는 가열수단이 구비되는 것을 특징으로 한다.Vaporizer according to the present invention for achieving the above technical problem: liquid reaction raw material supply pipe; An injection plate having an injection hole having a diameter smaller than an inner diameter of the liquid reaction raw material supply pipe and coupled to the liquid reaction raw material supply pipe; A gas flow pipe having an inner diameter larger than that of the liquid reaction raw material supply pipe and having one end coupled to the injection plate; And heating means for vaporizing the liquid raw material injected through the injection hole.

여기서, 상기 분사구는 0.8 ~ 1mm의 직경을, 상기 액상반응원료 공급관은 1 ~ 1.54mm의 내경을, 상기 기체흐름관은 4.57 ~ 10.16mm의 내경을 가지는 것을 특징으로 한다.Here, the injection port has a diameter of 0.8 ~ 1mm, the liquid reaction raw material supply pipe is characterized in that the inner diameter of 1 ~ 1.54mm, the gas flow pipe has an inner diameter of 4.57 ~ 10.16mm.

이하에서, 본 발명의 바람직한 실시예를 첨부한 도면들을 참조하여 상세히 설명한다. Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention will be described in detail.

도 2는 본 발명의 실시예에 따른 기화기를 설명하기 위한 개략도이다. 도면에 있어서, 도 1과 동일한 참조번호는 동일 기능을 수행하는 구성요소를 나타내며 반복적인 설명은 생략한다.2 is a schematic view for explaining a vaporizer according to an embodiment of the present invention. In the drawings, the same reference numerals as in FIG. 1 denote components that perform the same function, and a repetitive description thereof will be omitted.

도 2를 참조하면, 도 1과의 차이점은 분사판(120')의 분사구(h')가 액상반응원료 공급관(110)의 내경보다 작은 0.8 ~ 1 mm의 직경을 갖는다는 것이다. 따라서, 노즐(nozzle) 효과가 종래보다 좋아 기화가 더 잘 일어난다. Referring to FIG. 2, the difference from FIG. 1 is that the injection hole h ′ of the injection plate 120 ′ has a diameter of 0.8 to 1 mm smaller than the inner diameter of the liquid reaction raw material supply pipe 110. Therefore, the nozzle effect is better than before, so that vaporization occurs better.

종래와 마찬가지로, 액상반응원료 공급관(110)의 일단은 상기 주공급관에 용접 결합되며, 타단은 분사판(120')에 용접 결합되므로, 용접 시에 용접 물질이 관의 내부로 녹아 들어가게 된다. 그러나, 종래와 달리 분사구(h')의 직경이 액상반응원료 공급관(110)의 내경보다 작기 때문에 제1 흐름관(130a)으로의 액체원료의 공급은 주로 분사구(h')의 직경에 의존하게 된다. 따라서, 액상반응원료 공급관(110)과 분사판(120')의 용접 부위와, 액상반응원료 공급관(110)과 주공급관의 용접 부위에서, 용접 물질이 다소 녹아 관 내부로 들어가더라도 제1 흐름관(130a)으로의 액상반응원료 공급흐름은 큰 영향을 받지 않게 된다. As in the related art, one end of the liquid reaction raw material supply pipe 110 is welded to the main supply pipe, and the other end is welded to the injection plate 120 ', so that the welding material melts into the inside of the pipe during welding. However, unlike the related art, since the diameter of the injection hole h 'is smaller than the inner diameter of the liquid reaction raw material supply pipe 110, the supply of the liquid raw material to the first flow pipe 130a is mainly dependent on the diameter of the injection hole h'. do. Therefore, in the welding portion of the liquid reaction raw material supply pipe 110 and the injection plate 120 ', and the welding portion of the liquid reaction raw material supply pipe 110 and the main supply pipe, even if the welding material is slightly melted into the tube, the first flow pipe The liquid reaction raw material feed flow to 130a is not significantly affected.

도 3a 및 도 3b는 도 1의 기화기와 도 2의 기화기를 사용하여 BST 박막을 형성함으로써 재현성을 비교 테스트한 결과그래프를 각각 나타낸 것이다. 여기서, 도 3a는 도 1의 기화기를 이용하여 웨이퍼 10장에 대한 재현성 테스트를 한 결과이고, 도 3b는 도 2의 기화기를 사용하여 웨이퍼 10장에 대한 테스트를 진행후 다시 웨이퍼 25장에 대한 테스트를 진행한 결과이다. 3A and 3B illustrate graphs of comparative test results of reproducibility by forming a BST thin film using the vaporizer of FIG. 1 and the vaporizer of FIG. 2, respectively. Here, FIG. 3A is a result of reproducibility test on 10 wafers using the vaporizer of FIG. 1, and FIG. 3B is a test on 25 wafers after testing 10 wafers using the vaporizer of FIG. This is the result of proceeding.

여기서, BST의 액상반응원료는 두 개로 분류하여 마련하였다. BS 소스로는 (Ba(METHD)2(Methoxy Ethoxy Tetramethyl Heptane Dionato Barium)와 Sr(METHD)2 (Methoxy Ethoxy Tetramethyl Heptane Dionato Strontium)가 혼합된 전구체를 사용하였으며, Ti 소스로는 Ti(MPD)(THD)2 (Methoxy Pentane Dioxy Tetramethyl Heptane Dionato Titanium)를 사용하였다. 이들 두 개의 소스원료를 하나의 기화기에 공급 하여 기화시킨 후에 반응기로 공급하여 BST박막을 증착하였다. 증착조건은 표 1과 같다. Here, the liquid reaction raw material of BST was prepared by dividing into two. As a BS source, a precursor mixed with (Ba (METHD) 2 (Methoxy Ethoxy Tetramethyl Heptane Dionato Barium) and Sr (METHD) 2 (Methoxy Ethoxy Tetramethyl Heptane Dionato Strontium) was used, and as Ti source, Ti (MPD) (THD ) 2 (Methoxy Pentane Dioxy Tetramethyl Heptane Dionato Titanium) was used, and these two source materials were fed to one vaporizer, and then vaporized, and then fed into a reactor to deposit a BST thin film.

기판온도Substrate temperature BS 소스 공급속도BS Source Feed Rate Ti 소스 공급속도Ti source feed rate 운반기체 Ar공급유속Carrier Gas Ar Supply Flow Rate O2 공급유속O 2 supply flow rate 증착압력Deposition pressure 420℃420 ℃ 0.23g/min0.23 g / min 0.17g/min0.17 g / min 300sccm300sccm 200sccm200 sccm 2torr2torr

도 3a를 참조하면, 두께 재현성은 35.16%이고, 조성 표준편차(1σ)는 거의 3에 육박함으로써 상당히 좋지 못한 결과가 나타났음을 알 수 있다. 따라서, 도 1의 기화기를 복수개 대량생산에 투입할 경우 기화기 마다의 특성이 일정치 못한데서 기인하여 제조 재현성이 매우 떨어지게 된다. 반면, 도 3b를 참조하면, 두께 재현성은 1.42%이고, 조성 표준편차(1σ)는 약 1을 넘지 않음으로써 종래의 경우에 비해 매우 우수한 결과가 나타났음을 알 수 있다.
Referring to FIG. 3A, the thickness reproducibility was 35.16%, and the composition standard deviation (1σ) was nearly 3, indicating that a very bad result was obtained. Therefore, when the carburetor of FIG. 1 is put into mass production, the reproducibility is very low because the characteristics of each carburetor are not constant. On the other hand, referring to Figure 3b, it can be seen that the thickness reproducibility is 1.42%, and the composition standard deviation (1σ) does not exceed about 1, which is very superior to the conventional case.

상술한 바와 같이 본 발명에 따른 기화기에 의하면, 액상반응원료 공급관(110)과 분사판(120)을 서로 용접결합 시키거나, 액상반응원료 공급관(110)과 상기 주공급관을 용접결합 시킬 때에 그 결합 부위에서 용접물질이 관 내부로 다소 흘러 들어가더라도 제1 흐름관(130a)으로의 액상반응원료의 공급 흐름은 큰 영향을 받지 않게 된다. 따라서, 박막증착이 재현성 있게 이루어진다. As described above, according to the vaporizer according to the present invention, when the liquid reaction raw material supply pipe 110 and the injection plate 120 are welded to each other, or when the liquid reaction raw material supply pipe 110 and the main supply pipe are welded to each other Even if the welding material flows slightly into the pipe at the site, the supply flow of the liquid reaction raw material to the first flow pipe 130a is not significantly affected. Therefore, thin film deposition is made reproducibly.

본 발명은 상기 실시예에만 한정되지 않으며, 본 발명의 기술적 사상 내에서 당 분야에서 통상의 지식을 가진 자에 의해 많은 변형이 가능함은 명백하다.The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical spirit of the present invention.

Claims (4)

액상반응원료 공급관;Liquid reaction raw material supply pipe; 상기 액상반응원료 공급관의 내경보다 작은 직경의 분사구를 가지며 상기 액상반응원료 공급관에 결합되는 분사판;An injection plate having an injection hole having a diameter smaller than an inner diameter of the liquid reaction raw material supply pipe and coupled to the liquid reaction raw material supply pipe; 상기 액상반응원료 공급관의 내경보다 큰 내경을 가지며 일단이 상기 분사판과 결합되는 기체흐름관; 및A gas flow pipe having an inner diameter larger than that of the liquid reaction raw material supply pipe and having one end coupled to the injection plate; And 상기 분사구를 통하여 분사되는 상기 액상원료를 기화시키는 가열수단이 구비되는 것을 특징으로 하는 기화기.Evaporator characterized in that the heating means for vaporizing the liquid raw material injected through the injection port is provided. 제1항에 있어서, 상기 분사구는 0.8 ~ 1mm의 직경을, 상기 액상반응원료 공급관은 1 ~ 1.54mm의 내경을, 상기 기체흐름관은 4.57 ~ 10.16mm의 내경을 가지는 것을 특징으로 하는 기화기.The vaporizer of claim 1, wherein the injection hole has a diameter of 0.8 to 1 mm, the liquid reaction raw material supply pipe has an inner diameter of 1 to 1.54 mm, and the gas flow pipe has an inner diameter of 4.57 to 10.16 mm. 삭제delete 삭제delete
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