KR100428877B1 - Method of manufacturing insulating layer of semiconductor device using en solution - Google Patents

Method of manufacturing insulating layer of semiconductor device using en solution Download PDF

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KR100428877B1
KR100428877B1 KR1019970017014A KR19970017014A KR100428877B1 KR 100428877 B1 KR100428877 B1 KR 100428877B1 KR 1019970017014 A KR1019970017014 A KR 1019970017014A KR 19970017014 A KR19970017014 A KR 19970017014A KR 100428877 B1 KR100428877 B1 KR 100428877B1
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solution
vaporizer
dpm
insulating film
semiconductor device
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KR1019970017014A
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KR19980082224A (en
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유용식
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주식회사 하이닉스반도체
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: A method of manufacturing an insulating layer of a semiconductor device is provided to prevent a reactive material from being condensed in a vaporizer by using an EN(Ethylene Diamine) solution. CONSTITUTION: A plurality of liquid reactive materials(50a,50b,50c) are flowed into vaporizers(70a,70b,70c) through liquid pumps(60a,60b,60c), respectively. The liquid reactive materials are formed by mixing an EN solution in Tia(DPM)2, Ba(DPM)2 and Sr(DPM)2. Each liquid reactive material is vaporized in the corresponding vaporizer. At this time, the EN solution is additionally injected into the vaporizer. The vaporized reactive material is mixed with oxidizer vapor in a mixer(80). A BaxSr1-xTiO layer is deposited on a semiconductor substrate by spraying the resultant vaporized gas using a shower head(82).

Description

반도체 소자의 절연막 제조방법Insulating Method of Semiconductor Device

본 발명은 반도체 소자의 절연막 제조방법에 관한 것으로, 특히 BaxSr1-xTiO(이하, BST)와 같은 절연막을 증착시 열적안정성이 우수한 고체 용해 반응원료를 적정비율로 혼합하여 다른 가스관을 통해 함께 동시에 운송하여 절연막 증착함으로써 반응원료의 안정된 운송으로 증착되는 절연막의 재현성을 확보하도록 하는 기술에 관한 것이다.The present invention relates to a method for manufacturing an insulating film of a semiconductor device, and in particular, when the insulating film such as Ba x Sr 1-x TiO (hereinafter referred to as BST) is deposited, the solid melting reaction raw material having excellent thermal stability is mixed at an appropriate ratio through another gas pipe. The present invention relates to a technology for ensuring the reproducibility of an insulating film deposited by transporting the reaction material simultaneously and depositing an insulating film at the same time.

일반적으로, 절연막의 제조 방법으로는 유기금속 화학기상증착(Metalorganic Chemical Vapor Deposion 이하, MOCVD) 방법이 사용되고 있다.In general, an organic metal chemical vapor deposition (MOCVD) method is used as a method of manufacturing the insulating film.

즉, 그 이유는 높은 증착 속도와 대면적 표면의 균일성, 우수한 단차피복성(step coverage)를 갖고, 화합 구성물의 제어를 쉽게 할 수 있는 많은 이점이 있기 때문이다.That is because they have a high deposition rate, large surface area uniformity, excellent step coverage, and many advantages that make it easier to control the compound composition.

또한, 절연막으로 BaxSr1-xTiO3, x < 0.7 일때 BST는 상유전체 위상과 높은 유전 상수를 가지고 있어 기가 디램(Giga - DRAM)의 캐패시터로 널리 사용되고 있다.In addition, as an insulating film, when Ba x Sr 1-x TiO 3 , x <0.7, BST has a dielectric constant and a high dielectric constant, and thus is widely used as a capacitor of a giga DRAM (Giga DRAM).

도 1 은 종래 기술에 따른 MOCVD 시스템의 구성도이다.1 is a block diagram of a MOCVD system according to the prior art.

먼저, 아르곤(Ar) 가스와 각각의 Ba, Sr, Ti 이 담긴 고체 용해상태의 반응원료(10a, 10b, 10c)를 액체펌프(20a, 20b, 20c)로 통해 기화기(30a, 30b, 30c)에서 가열하여 기화시킨다.First, the vaporizers 30a, 30b, and 30c through argon (Ar) gas and the reaction raw materials 10a, 10b and 10c in the solid dissolved state containing the respective Ba, Sr and Ti through the liquid pumps 20a, 20b and 20c. Heated to vaporize.

다음, 산소(O2)나 산화질소(N2O)와 같은 산화제를 기상혼합기(40)에서 상기 기화된 가스와 함께 기상혼합시킨 다음, 샤워헤드(42)로 부터 기상혼합가스를 분사하고 히터(44)을 가열하여 반도체기판(46) 상부에 BST막을 증착하여 절연막을 형성한다.Next, an oxidizing agent such as oxygen (O 2 ) or nitric oxide (N 2 O) is gas-phase mixed with the vaporized gas in the gas phase mixer 40, and then the gaseous gas mixture is injected from the shower head 42 and the heater The 44 is heated to deposit a BST film over the semiconductor substrate 46 to form an insulating film.

그러나, 낮은 증기압과 열적으로 불안정성을 가진 고체용해 반응원료를 사용하기 때문에 기화기에서 가열할 때, 용액이 먼저 분해되어 고제 용질이 기화기 내부에서 응축되어 수회 박막을 증착하게 되면 반응원료가 운반되지 못하여 기화기 내부에 응축된 박막의 찌꺼기를 제거해야 하는 비용과 시간이 소요되는 문제점이 있다.However, because it uses a solid soluble reaction raw material with low vapor pressure and thermal instability, when heated in the vaporizer, the solution is first decomposed, the solid solute is condensed inside the vaporizer, and the thin film is deposited several times so that the reaction raw material cannot be transported. There is a problem in that it takes time and cost to remove the residue of the thin film condensed therein.

또한, BST로 이루어진 절연막은 균일하게 조성하기 어렵고, 재현성을 확보하기가 쉽지 않다.In addition, an insulating film made of BST is difficult to uniformly form, and it is not easy to ensure reproducibility.

따라서, 본 발명은 상기한 문제점을 해결하기 위한 것으로 기화기 내부에 다량의 용액을 주입시 Sr(DPM)2: 에틸렌 다이아민(Ethylene Diamine 이하, EN)의 용액을 적정비율로 혼합하여 다른 가스관과 함께 동시에 반응원료를 운송함으로써 수회 박막을 증착후 기화기 내부에 남아있는 박막의 찌꺼기를 용해시켜 제거하도록 하는 반도체 소자의 절연막 제조방법을 제공하는 데 그 목적이 있다.Accordingly, the present invention is to solve the above problems and when a large amount of solution is injected into the vaporizer, a solution of Sr (DPM) 2 : ethylene diamine (EN) or less is mixed at an appropriate ratio together with other gas pipes. At the same time, an object of the present invention is to provide a method for manufacturing an insulating film of a semiconductor device in which the reaction material is transported to remove and remove the thin film remaining in the vaporizer after several times of deposition.

도 1 은 종래 기술에 따른 MOCVD 시스템의 구성도,1 is a block diagram of a MOCVD system according to the prior art,

도 2 는 본 발명에 따른 MOCVD 시스템의 구성도,2 is a block diagram of a MOCVD system according to the present invention,

도 3 은 본 발명에 따라 반응원료의 흔합비율에 따른 열분해 곡선을 도시한 그래프.Figure 3 is a graph showing the pyrolysis curve according to the mixing ratio of the reaction raw materials in accordance with the present invention.

< 도면의 주요부분에 대한 부호의 설명><Description of reference numerals for main parts of the drawings>

10a, 10b, 10c : 반응원료 20a, 20b, 20c : 액체펌프,10a, 10b, 10c: reaction raw materials 20a, 20b, 20c: liquid pump,

30a, 30b, 30c : 기화기 40 : 기상혼합기,30a, 30b, 30c: vaporizer 40: vapor phase mixer,

42 : 샤워헤드 44 : 히터,42: showerhead 44: heater,

46 : 반도체 기판 50a, 50b, 50c : 반응원료,46: semiconductor substrate 50a, 50b, 50c: reaction raw material,

60a, 60b, 60c : 액체펌프 70a, 70b, 70c : 기화기,60a, 60b, 60c: liquid pump 70a, 70b, 70c: vaporizer,

80 : 기상혼합기 82 : 샤워헤드,80: meteorological mixer 82: shower head,

84 : 히터 86 : 반도체 기판.84 heater 86 semiconductor substrate.

상기 목적을 달성하기 위해 본 발명에 따른 반도체 소자의 절연막 제조방법은In order to achieve the above object, the insulating film manufacturing method of the semiconductor device according to the present invention

고체 반응원료 Tia(DPM)2, Ba(DPM)2및 Sr(DPM)2각각을 EN용액에 혼합하여만든 액체반응원료를 액체펌프로 통해 기화기 내부로 주입하는 공정과,Injecting a liquid reaction raw material made by mixing solid reaction raw materials Tia (DPM) 2 , Ba (DPM) 2 and Sr (DPM) 2 into EN solution into the vaporizer through a liquid pump;

상기 기화기 내부의 액체반응원료를 가열시켜 기화시킴과 동시에 EN 용액을 기화기에 추가로 주입하는 공정과,Heating and vaporizing the liquid reaction raw material in the vaporizer and simultaneously injecting an EN solution into the vaporizer;

상기 기화된 반응원료를 혼합기에서 산화제와 함께 기상혼합시키는 공정과,Vapor-phase mixing the vaporized reaction raw material with an oxidizing agent in a mixer;

상기 기상혼합된 가스를 샤워헤드에서 분사시켜 가열된 히터 상부의 반도체 기판에 BST막을 증착하는 공정을 특징으로 한다.And spraying the gaseous-mixed gas from the shower head to deposit a BST film on the heated semiconductor substrate.

이하, 첨부된 도면을 참조하여 본 발명에 따른 반도체 소자의 절연막 제조방법에 대하여 상세히 설명을 하기로 한다.Hereinafter, an insulating film manufacturing method of a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings.

도 2 는 본 발명에 따른 MOCVD 시스템의 구성도이다.2 is a block diagram of a MOCVD system according to the present invention.

먼저, 아르곤(Ar) 가스와 고체 용해상태의 반응원료(50a, 50b, 50c)를 각각 액체펌프(60a, 60b, 60c)를 통해 기화기(70a, 70b, 70c)에서 200 ～ 250℃ 온도로 가열하여 기화시킨다. 여기서, 고체 용해상태의 반응원료(50a)는 고체 용질 Sr(DPM)2와 에틸렌 다이아민(EN)의 비율이 1 : 2 내지 1 : 20인 혼합 반응원료이며, 반응원료(50b, 50c)는 각각 Ba(DPM)2와 Ti(DPM)2를 에틸렌 다이아민(EN)과 혼합한 반응원료로 그 비율이 1 : 2 내지 1 : 20이다.First, argon (Ar) gas and the reaction raw materials (50a, 50b, 50c) in the solid dissolved state are heated to the temperature of 200 ~ 250 ℃ in the vaporizers (70a, 70b, 70c) through the liquid pump (60a, 60b, 60c), respectively To vaporize. Here, the reaction raw material 50a in the solid dissolved state is a mixed reaction raw material in which the ratio of solid solute Sr (DPM) 2 and ethylene diamine (EN) is 1: 2 to 1:20, and the reaction raw materials (50b, 50c) are Reaction materials obtained by mixing Ba (DPM) 2 and Ti (DPM) 2 with ethylene diamine (EN), respectively, in a ratio of 1: 2 to 1:20.

상기 혼합 반응원료의 EN 용액은 고체 용질이 응축되는 것을 방지하는 역할을 하나 EN 용액의 양이 과도한 경우에는 기화되지 않기 때문에 기화기(70a, 70b, 70c)외의 다른 가스관을 통해 EN을 적정량 공급하여(도 2의 EN) 반응원료가 응축되는 것을 방지하고 혼합 반응원료의 고체 용질과 EN 용액의 비율을 상기의 비율대로유지한다. 예를 들어, Sr(DPM)2과 EN 용액의 혼합 반응 원료에서, Sr(DPM)2과 EN 용액의 비율을 1:2 ～ 1:8로 유지하여 도 3에 도시된 바와 같이 열분해 작용을 극대화하고 고체 용질이 응축되는 것을 방지한다.The EN solution of the mixed reaction raw material serves to prevent condensation of the solid solute, but when the amount of the EN solution is excessive, the EN solution is not vaporized, so that an appropriate amount of EN is supplied through a gas pipe other than the vaporizers 70a, 70b, and 70c ( EN) of FIG. 2 prevents condensation of the reaction raw material and maintains the ratio of the solid solute and the EN solution of the mixed reaction raw material at the above ratio. For example, Sr (DPM) 2 and in the mixing reaction materials in EN solution, Sr (DPM) 2 and the ratio of the EN Solution 1: maximizing the thermal decomposition as shown in Figure 3 by keeping it in 8-acting: 2 to 1 And prevent condensation of solid solutes.

또한, 상기 반응원료(50a, 50b, 50c)에서 한 개의 혼합된 반응원료를 사용하였을 경우에는 그에 따른 한 개의 운송관을 사용하게 되므로 나머지 운송관은 사용하지 않아도 된다.In addition, when one mixed reaction raw material is used in the reaction raw materials 50a, 50b, and 50c, one transport pipe is used accordingly, and thus the remaining transport pipes do not need to be used.

더불어, 상기 반응원료(50a, 50b, 50c)의 운송관에서 증착되는 박막의 종류에 따라 임의의 운송관을 사용하여도 가능하며, 상기 반응원료(50a, 50b, 50c)를 상기 액체펌프(60a, 60b, 60c)와 기화기(70a, 70b, 70c)를 사용하지 않고 직접 가열하여 사용하여도 무방하다.In addition, according to the type of thin film deposited in the transport pipe of the reaction raw materials (50a, 50b, 50c) may be used any transport pipe, the reaction raw materials (50a, 50b, 50c) to the liquid pump (60a) , 60b, 60c and vaporizers 70a, 70b, 70c may be used by directly heating.

다음, 산소(O2)나 산화질소(N2O)와 같은 산화제를 기상혼합기(80)에서 기화된 반응원료와 함께 200 ～ 250℃의 가열 온도에서 기상혼합시킨 다음, 샤워헤드(82)로부터 기상혼합가스를 분사하고 히터(84)를 400 ～ 700℃ 온도로 가열하여 반도체기판(46) 상부에 BST막을 증착하여 절연막을 형성한다.Next, an oxidant such as oxygen (O 2 ) or nitric oxide (N 2 O) is mixed with the reaction raw material vaporized in the gas phase mixer 80 at a heating temperature of 200 to 250 ° C., and then the shower head 82 is removed from the shower head 82. The gaseous mixed gas is injected and the heater 84 is heated to a temperature of 400 to 700 ° C. to deposit a BST film on the semiconductor substrate 46 to form an insulating film.

이 때, 상기 절연막을 수회 증착한 다음 다량의 세척용액을 기화기(70a, 70b, 70c) 내부로 주입하여 남아 있을 수 있는 박막의 찌꺼기을 용해시켜 제거함으로써 박막 증착의 재현성을 높일 수 있게 된다.At this time, by depositing the insulating film several times, a large amount of cleaning solution is injected into the vaporizers (70a, 70b, 70c) by dissolving and removing the residue of the thin film can be improved reproducibility of thin film deposition.

상기한 바와 같이 본 발명에 따르면, 절연막으로 BST막을 증착시 액체 반응원료를 기화기에서 기화할 때 기화기 내부에 반응원료가 응축되는 현상을 방지하도록 열적안정성을 갖는 적정비율의 용액을 다른 가스관과 함께 통해 동시에 운송하여 반응원료가 응축되는 것을 방지함으로써 기화기내부에 응축된 박막의 찌꺼기을 제거하는 데 소용되는 시간과 비용을 절감할 수 있으며, 반응원료의 안정된 운송으로 반도체 기판상에 형성되는 절연막의 재현성을 확보할 수 있는 이점이 있다.As described above, according to the present invention, when depositing a BST film with an insulating film, when the liquid reaction material is vaporized in the vaporizer, a proper ratio of solution having thermal stability is prevented from being condensed inside the vaporizer together with other gas tubes. At the same time, the reaction material is prevented from condensing, thereby reducing the time and cost required to remove the residue of the thin film condensed in the vaporizer, and ensuring the reproducibility of the insulating film formed on the semiconductor substrate through the stable transportation of the reaction material. There is an advantage to this.

Claims (5)

고체 반응원료 Tia(DPM)2, Ba(DPM)2및 Sr(DPM)2각각을 EN용액에 혼합하여 만든 액체반응원료를 액체펌프로 통해 기화기 내부로 주입하는 공정과,Injecting a liquid reaction material made by mixing solid reaction materials Tia (DPM) 2 , Ba (DPM) 2 and Sr (DPM) 2 into EN solution into the vaporizer through a liquid pump; 상기 기화기 내부의 액체반응원료를 가열시켜 기화시킴과 동시에 EN 용액을 기화기에 추가로 주입하는 공정과,Heating and vaporizing the liquid reaction raw material in the vaporizer and simultaneously injecting an EN solution into the vaporizer; 상기 기화된 반응원료를 혼합기에서 산화제와 함께 기상혼합시키는 공정과,Vapor-phase mixing the vaporized reaction raw material with an oxidizing agent in a mixer; 상기 기상혼합된 가스를 샤워헤드에서 분사시켜 가열된 히터 상부의 반도체 기판에 BST막을 증착하는 공정을 특징으로 하는 반도체 소자의 절연막 제조방법.And depositing a BST film on the semiconductor substrate on the heated heater by injecting the gas-mixed gas from a shower head. 제1항에 있어서.The method of claim 1. 상기 고체 반응원료와 EN 용액은 1 : 2 ～ 1: 20 의 비율로 혼합되는 것을 특징으로 하는 반도체 소자의 절연막 제조방법.The solid reaction raw material and the EN solution is a method of manufacturing an insulating film of a semiconductor device, characterized in that the mixing ratio of 1: 2 ~ 1: 20. 제1항에 있어서,The method of claim 1, 상기 산화제는 O2또는 N2O인 것을 특징으로 하는 반도체 소자의 절연막 제조방법.The oxidizing agent is O 2 or N 2 O characterized in that the insulating film manufacturing method of a semiconductor device. 제1항에 있어서,The method of claim 1, 삭이 기화기의 가열온도는 200 ～ 250℃인 것을 특징으로 하는 반도체 소자의 절연막 제조방법.The heating temperature of the grinding | carburetor vaporizer is 200-250 degreeC, The manufacturing method of the insulating film of a semiconductor element. 제1항에 있어서,The method of claim 1, 상기 히터의 가열온도는 400 ～ 700℃인 것을 특징으로 하는 반도체 소자의 절연막 제조방법.The heating temperature of the heater is 400 ~ 700 ℃ characterized in that the insulating film manufacturing method of a semiconductor device.
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KR890008936A (en) * 1987-11-27 1989-07-13 야마모도 다꾸마 Organometallic Chemical Vapor Deposition Apparatus and Method of Use
JPH05136120A (en) * 1991-11-13 1993-06-01 Hitachi Ltd Dielectric thin film forming device
JPH06224131A (en) * 1993-01-26 1994-08-12 Osaka Gas Co Ltd Cvd thin film forming device
KR960012367A (en) * 1994-09-09 1996-04-20 이헌조 High dielectric constant thin film deposition apparatus

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890008936A (en) * 1987-11-27 1989-07-13 야마모도 다꾸마 Organometallic Chemical Vapor Deposition Apparatus and Method of Use
JPH05136120A (en) * 1991-11-13 1993-06-01 Hitachi Ltd Dielectric thin film forming device
JPH06224131A (en) * 1993-01-26 1994-08-12 Osaka Gas Co Ltd Cvd thin film forming device
KR960012367A (en) * 1994-09-09 1996-04-20 이헌조 High dielectric constant thin film deposition apparatus

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