KR20000003332A - Solution supplying structure of evaporator for semiconductor chemical vapor deposition apparatus - Google Patents

Solution supplying structure of evaporator for semiconductor chemical vapor deposition apparatus Download PDF

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KR20000003332A
KR20000003332A KR1019980024561A KR19980024561A KR20000003332A KR 20000003332 A KR20000003332 A KR 20000003332A KR 1019980024561 A KR1019980024561 A KR 1019980024561A KR 19980024561 A KR19980024561 A KR 19980024561A KR 20000003332 A KR20000003332 A KR 20000003332A
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solution
evaporator
vapor deposition
chemical vapor
case body
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KR1019980024561A
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KR100289405B1 (en
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전유찬
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김영환
현대반도체 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: The structure can perform the process repeatedly by blocking the extraction and the density increase of a solute by performing the operation of supplying precursor solution for a constant time through four solution injection tubes in turn. CONSTITUTION: The structure comprises: a body case(12) which a space part(11) is formed in; four solution injector tubes(13) inserted on the top of the case body; a flux controller(14) installed on each solution injection tube; a porous heating plate(15) installed inside the space part of the case body; a gas outflow tube(16) installed on bottom of the case body; and a return gas inflow tube(17) connected to the one side of the top of the case body.

Description

반도체 화학기상증착장비용 증발기의 용액공급구조Solution supply structure of evaporator for semiconductor chemical vapor deposition equipment

본 발명은 반도체 화학기상증착장비용 증발기의 용액공급구조에 관한 것으로, 특히 공급되는 용액이 원할하게 증발되도록 하여 공정의 재현성을 향상시키도록 하는데 적합한 반도체 화학기상증착장비용 증발기의 용액공급구조에 관한 것이다.The present invention relates to a solution supply structure of the evaporator for semiconductor chemical vapor deposition equipment, and more particularly to a solution supply structure of the evaporator for semiconductor chemical vapor deposition equipment suitable for improving the reproducibility of the process by allowing the supplied solution to be evaporated smoothly. will be.

반도체 웨이퍼 제조공정중 메탈 및 캐패시터 제조등의 박막형성공정에서는 최근의 추세인 집적도의 증가에 다른 종횡비가 커지면서 복잡한 형상 및 미세한 구조에 화학기상증착법이 널리 이용되고 있으며, 이러한 화학기상증착법을 수행하는 장비중 전구체(PRECURSOR)인 금속유기화합물을 증발기에서 증발시켜서 반응기 내로 주입시키는 화학기상증착장비에서는 증발기를 필수적으로 사용하게 된다.In the thin film forming process such as metal and capacitor manufacturing during the semiconductor wafer manufacturing process, chemical vapor deposition is widely used for complex shapes and fine structures as the aspect ratio increases due to the recent increase in the degree of integration. Evaporator is essential in chemical vapor deposition equipment in which a metal organic compound, which is a heavy precursor (PRECURSOR), is evaporated in an evaporator and injected into the reactor.

상기와 같이 화학기상증착장비에 설치되어 있는 종래 증발기가 도 1에 도시되어 있는 바, 이를 간단히 설명하면 다음과 같다.The conventional evaporator installed in the chemical vapor deposition equipment as shown above is shown in Figure 1, briefly described as follows.

도 1은 종래 화학기상증착장비용 증발기의 구조를 보인 부분절결사시도로서, 도시된 바와 같이, 종래 화학기상증착장비용 증발기는 내측에 일정공간부(1)가 형성되어 있는 원통형의 케이스 바디(2)와, 그 케이스 바디(2)의 상단부에 삽입설치되어 액체상태의 전구체를 주입하기 위한 용액주입관(3)과, 상기 케이스 바디(2)의 내측 공간부(1)에 고정설치됨과 아울러 상기 용액주입관(3)의 하단부와 일정간격을 두고 설치되어 용액을 가열하여 기화시키기 위한 원판형의 다공질 가열판(5)과, 상기 케이스 바디(2)의 하단부 외측으로 형성되어 가열판(5)에서 기화된 전구체를 반응기로 유입시키기 위한 기체유출관(6)과, 상기 케이스 바디(2)의 상단부 일측에 설치되어 공간부(1) 내측으로 반송기체를 유입시키기 위한 반송가스유입관(7)으로 구성되어 있다.1 is a partial cutaway perspective view showing a structure of a conventional evaporator for chemical vapor deposition equipment, as shown, the conventional evaporator for chemical vapor deposition equipment is a cylindrical case body having a predetermined space (1) formed inside ( 2), a solution injection pipe 3 inserted into the upper end of the case body 2 to inject a liquid precursor, and fixed to the inner space 1 of the case body 2; It is installed at a lower interval with the lower end of the solution injection pipe (3) is a disk-shaped porous heating plate (5) for heating and vaporizing the solution, and formed on the outside of the lower end of the case body (2) in the heating plate (5) A gas outlet pipe 6 for introducing a vaporized precursor into the reactor and a carrier gas inlet pipe 7 installed at one side of an upper end of the case body 2 to introduce a carrier gas into the space 1; Consists of.

상기와 같이 구성되어 있는 종래 반도체 화학기상증착장비용 증발기에서는 전구체인 Ba(DPM)2와 같은 용질을 부틸아세테이트와 같은 용매에 녹여서 전구체용액(9)을 만든다.In the conventional evaporator for semiconductor chemical vapor deposition equipment configured as described above, a precursor solution 9 is prepared by dissolving a solute such as Ba (DPM) 2 as a precursor in a solvent such as butyl acetate.

그런 다음, 상기 증발기(8)의 케이스 바디(2) 외측에 설치된 히터(미도시)를 이요하여 가열판(5)을 일정온도로 가열한 상태에서 용액주입관(3)을 통하여 가열판(5)의 상면에 전구체용액(9)을 주입한다.Then, a heater (not shown) installed outside the case body 2 of the evaporator 8 is used to heat the heating plate 5 to a predetermined temperature, and then, through the solution injection pipe 3, The precursor solution 9 is injected into the upper surface.

이와 같이 주입된 전구체용액(9)은 가열판(5)에서 가열되어 기화되고, 반송가스유입관(7)으로 유입되는 아르곤가스와 같은 반송가스에 의하여 다공질의 가열판(5)을 통과하여 기체유출관(6)을 통하여 반응기로 주입되고, 이와 같이 주입된 기체는 웨이퍼의 상면에 일정두께의 박막을 형성하게 된다.The precursor solution 9 injected in this way is heated and vaporized by the heating plate 5, and passes through the porous heating plate 5 by a carrier gas such as argon gas flowing into the carrier gas inlet tube 7 to allow the gas outlet tube to flow. Injected into the reactor through (6), the injected gas forms a thin film of a predetermined thickness on the upper surface of the wafer.

그러나, 상기와 같은 종래 반도체 화학기상증착장비용 증발기에서는 가열판(5)으로 공급되는 전구체용액(9)에서 용질에 비하여 용매가 빨리 증발되기 때문에 용질이 많이 잔류하고, 계속공급되는 전구체용액(9)의 농도는 점차증가하여 미처증발되지 못한 전구체 용액이 석출되어 다공질인 가열판(5)의 미세한 홀을 막게 되며, 이와 같은 현상은 일정양을 기화시켜서 반응기로 공급하지 못하여 발생되는 작업의 재현성을 저하시킬뿐만 아니라, 가열판(5)의 잦은 교체에 따른 작업지연 및 제조원가상승을 초래하는 문제점이 있었다.However, in the conventional evaporator for semiconductor chemical vapor deposition equipment as described above, since the solvent evaporates faster than the solute in the precursor solution 9 supplied to the heating plate 5, the solute remains much and the precursor solution 9 continues to be supplied. The concentration of is gradually increased to precipitate the precursor solution that has not been evaporated to block the fine holes of the porous heating plate 5, and this phenomenon may reduce the reproducibility of the work generated by not supplying the reactor by vaporizing a certain amount. In addition, there was a problem that the work delay and manufacturing cost increase due to frequent replacement of the heating plate (5).

상기와 같은 문제점을 감안하여 안출한 본 발명의 목적은 항상 일정양을 기화시켜서 반응기로 공급하여 작업의 재현성을 향상시키도록 하는데 적합한 반도체 화학기상증착장비용 증발기의 용액공급구조를 제공함에 있다.The object of the present invention devised in view of the above problems is to provide a solution supply structure of an evaporator for semiconductor chemical vapor deposition equipment suitable for improving the reproducibility of work by always vaporizing a certain amount and supplying it to the reactor.

도 1은 종래 화학기상증착장비용 증발기의 구조를 보인 부분절결사시도.1 is a partial cutaway perspective view showing the structure of a conventional evaporator for chemical vapor deposition equipment.

도 2는 본 발명 반도체 화학기상증착장비용 증발기의 용액공급구조를 보인 부분절결사시도.Figure 2 is a partial cutaway perspective view showing the solution supply structure of the evaporator for semiconductor chemical vapor deposition equipment of the present invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

11 : 공간부 12 : 케이스 바디11: space part 12: case body

13 : 용액주입관 14 : 유량조절기13: solution injection pipe 14: flow controller

15 : 가열판 16 : 기체유출관15 heating plate 16: gas outlet pipe

17 : 반송가스유입관17: return gas inlet pipe

상기와 같은 본 발명의 목적을 달성하기 위하여 내측에 일정크기의 공간부가 형성되어 있는 케이스 바디의 상단부에 용액주입관이 설치되어 있고, 하단부에 기체유출관이 설치되어 있으며, 일측 상단부에 반송가스유입관이 설치되어 있고, 내측에 가열판이 설치되어 있는 반도체 화학기상증착장비용 증발기에 있어서, 상기 용액주입관을 복수개 설치하고, 그 용액주입관 상에 각각 유량조절기를 설치하여서 구성되는 것을 특징으로 하는 반도체 화학기상증착장비용 증발기의 용액공급구조가 제공된다.In order to achieve the object of the present invention as described above, a solution injection pipe is installed at the upper end of the case body in which a space portion of a predetermined size is formed, a gas outlet pipe is installed at the lower end, and the carrier gas inlet is provided at one upper end. An evaporator for semiconductor chemical vapor deposition equipment, in which a pipe is provided and a heating plate is provided inside, wherein a plurality of solution injection pipes are provided, and a flow controller is provided on the solution injection pipes, respectively. A solution supply structure of an evaporator for semiconductor chemical vapor deposition equipment is provided.

이하, 상기와 같이 구성되는 본 발명 반도체 화학기상증착장비용 증발기의 용액공급구조를 첨부된 도면의 실시예를 참고하여 상세히 설명하면 다음과 같다.Hereinafter, the solution supply structure of the evaporator for semiconductor chemical vapor deposition equipment of the present invention configured as described above will be described in detail with reference to embodiments of the accompanying drawings.

도 2는 본 발명 반도체 화학기상증착장비용 증발기의 용액공급구조를 보인 부분절결사시도로서, 내측에 일정크기의 공간부(11)가 형성되어 있는 바디 케이스(12)와, 그 케이스 바디(12)의 상단부에 삽입설치되는 4개의 용액주입관(13)들과, 그 용액주입관(13)상에 각각 설치되는 유량조절기(14)와, 상기 케이스 바디(12)의 공간부(11) 내측에 설치되는 다공질의 가열판(15)과, 상기 케이스 바디(12)의 하단부에 설치되는 기체유출관(16)과, 상기 케이스 바디(12)의 상단부 일측에 연결설치되는 반송가스유입관(17)으로 구성되어 있다.2 is a partial cutaway perspective view showing a solution supply structure of an evaporator for a semiconductor chemical vapor deposition apparatus according to the present invention, a body case 12 having a predetermined size space 11 formed therein, and a case body 12 thereof. Four solution injection pipes (13) inserted into the upper end of the), the flow regulator 14 is respectively installed on the solution injection pipe 13, and the inner space portion 11 of the case body 12 Porous heating plate 15 is installed in the gas outlet pipe 16 is installed on the lower end of the case body 12, the carrier gas inlet pipe 17 is connected to one side of the upper end of the case body 12 It consists of.

상기와 같이 구성되어 있는 본 발명 용액공급구조를 갖는 반도체 화학기상증착장비용 증발기는 케이스 바디(12)의 외측에 설치된 히터(미도시)에 의하여 케이스 바디(12)의 내측에 설치된 가열판(15)이 일정온도로 가열된 상태에서 1개의 용액주입관(13-1)을 통하여 Ba(DPM)2와 같은 용질을 부틸아세테이트와 같은 용매에 용해하여 만든 전구체 용액(18-1))을 주입하여 가열판(15)의 상면에 공급되도록 한다.Evaporator for semiconductor chemical vapor deposition equipment having a solution supply structure of the present invention configured as described above is a heating plate 15 installed inside the case body 12 by a heater (not shown) installed on the outside of the case body 12 In the state heated to this constant temperature, a precursor plate (18-1) prepared by dissolving a solute such as Ba (DPM) 2 in a solvent such as butyl acetate through one solution injection tube 13-1) Supply to the upper surface of (15).

상기와 같이 공급되는 전구체 용액(18-1)은 기화되고, 반송가스유입관(17)으로 유입되는 아르곤 가스에 의하여 다공질의 가열판(15)을 통과한 다음, 기체유출관(16)을 통하여 반응기(미도시)의 내측으로 유입되면서 웨이퍼에 BST(Ba,Sr)TiO3)막의 증착이 이루어진다.The precursor solution 18-1 supplied as described above is vaporized and passed through the porous heating plate 15 by argon gas introduced into the carrier gas inlet pipe 17, and then through the gas outlet pipe 16. As it flows into the inside (not shown), deposition of a BST (Ba, Sr) TiO 3 ) film is performed on the wafer.

상기와 같이 1개의 용액주입관(13-1)을 통하여 일정시간 전구체용액(18-1)의 기화작업을 실시한 다음에는 유량조절기(14-1)를 이용하여 전구체용액의 공급을 차단하고, 근접한 다른 용액주입관(13-2)에 설치된 유량조절기(14-2)를 열어서 전구체용액(18-2)을 가열판(15)에 공급하며 기화작업 및 반응기로의 공급이 지속되도록 한다.As described above, after performing the vaporization operation of the precursor solution 18-1 through a single solution injection tube 13-1, the supply of the precursor solution is cut off using the flow controller 14-1, and The flow regulator 14-2 installed in the other solution inlet pipe 13-2 is opened to supply the precursor solution 18-2 to the heating plate 15, and the vaporization operation and the supply to the reactor are continued.

상기와 같은 기화작업이 진행되는 동안에는 이전의 용액주입관(13-1)을 통하여 가열판(15)에 공급되었던 전구체용액(18-2)은 완전히 기화되어 반응기로 공급되어 진다.During the gasification process as described above, the precursor solution 18-2, which was previously supplied to the heating plate 15 through the solution injection pipe 13-1, is completely vaporized and supplied to the reactor.

상기와 같은 방법으로 4개의 용액주입관(13:13-1,13-2,13-3,13-4)과 4개의 유량조절기(14:14-1,14-2,14-3,14-4)를 이용하여 교대로 전구체용액(18)이 기화되도록 하면서 증착작업을 실시한다.Four solution injection pipes (13: 13-1,13-2,13-3,13-4) and four flow regulators (14: 14-1,14-2,14-3,14) -4) is used to alternately vaporize the precursor solution 18 while vaporizing.

상기의 실시예에서는 용액주입관(13)이 4개 설치된 것을 예로들어 설명하였으나, 꼭 그에 한정하는 것은 아니고, 교대로 용액을 공급할 수 있도록 적어도 2개 이상의 용액주입관(13)을 설치하면 재현성있는 작업이 가능하다.In the above embodiment, four solution injection pipes 13 have been described as an example. However, the present invention is not limited thereto, and at least two solution injection pipes 13 may be provided to alternately supply a solution. Work is possible.

이상에서 상세히 설명한 바와 같이, 본 발명 반도체 화학기상증착장비용 증발기의 용액공급구조는 케이스 바디의 상단부에 4개의 용액주입관을 설치하고, 그 용액주입관 상에 각각 유량조절기를 설치하여, 4개의 용액주입관을 통하여 일정시간 전구체용액을 공급하는 동작을 교대로 실시하도록 함으로써, 종래와 같이 용질의 농도증가 및 석출이 발생되는 것을 차단하여 지속적으로 공정을 재현성있게 실시할 수 있는 효과가 있고, 가열판을 자주 교체하지 않아도 되므로 종래와 같이 작업지연이 발생되는 것을 방지할뿐만 아니라, 제조원가가 절감되는 효과가 있다.As described in detail above, in the solution supply structure of the evaporator for semiconductor chemical vapor deposition apparatus of the present invention, four solution injection tubes are installed at the upper end of the case body, and four flow controllers are installed on the solution injection tubes, respectively. By alternately performing the operation of supplying the precursor solution through the solution inlet tube alternately, it is possible to prevent the increase in concentration and precipitation of the solute as in the prior art and to continuously perform the process reproducibly, and the heating plate Since it is not necessary to replace often, as well as preventing the work delay occurs as in the conventional, there is an effect that the manufacturing cost is reduced.

Claims (2)

내측에 일정크기의 공간부가 형성되어 있는 케이스 바디의 상단부에 용액주입관이 설치되어 있고, 하단부에 기체유출관이 설치되어 있으며, 일측 상단부에 반송가스유입관이 설치되어 있고, 내측에 가열판이 설치되어 있는 반도체 화학기상증착장비용 증발기에 있어서, 상기 용액주입관을 복수개 설치하고, 그 용액주입관 상에 각각 유량조절기를 설치하여서 구성되는 것을 특징으로 하는 반도체 화학기상증착장비용 증발기의 용액공급구조.The solution inlet pipe is installed at the upper end of the case body in which a predetermined size space is formed, the gas outlet pipe is installed at the lower end, the carrier gas inlet pipe is installed at one upper end, and the heating plate is installed inside. In the evaporator for semiconductor chemical vapor deposition equipment, the solution supply structure of the evaporator for semiconductor chemical vapor deposition equipment, characterized in that a plurality of the solution injection pipe is installed, respectively, the flow regulator is installed on the solution injection pipe. . 제 1항에 있어서, 상기 용액주입관은 적어도 2개 이상 설치되는 것을 특징으로 하는 반도체 화학기상증착장비용 증발기의 용액공급구조.The solution supply structure of the evaporator for semiconductor chemical vapor deposition equipment according to claim 1, wherein at least two solution injection pipes are installed.
KR1019980024561A 1998-06-27 1998-06-27 Precursor supply structure for evaporator in semiconductor chemical vapor depositor KR100289405B1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150114099A (en) * 2014-03-31 2015-10-12 주식회사 선익시스템 Evaporator with Shutter for Opening and Closing Nozzle so that Exhausted Source can be Replaced During Operation
KR20150114100A (en) * 2014-03-31 2015-10-12 주식회사 선익시스템 Evaporator having a shutter for opening and closing and central passage for holding the state of a single spray
KR20190020248A (en) * 2017-08-18 2019-02-28 삼성전자주식회사 Unit for supplying precursor, substrate processing apparatus and method for manufacturing semiconductor device using the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150114099A (en) * 2014-03-31 2015-10-12 주식회사 선익시스템 Evaporator with Shutter for Opening and Closing Nozzle so that Exhausted Source can be Replaced During Operation
KR20150114100A (en) * 2014-03-31 2015-10-12 주식회사 선익시스템 Evaporator having a shutter for opening and closing and central passage for holding the state of a single spray
KR20190020248A (en) * 2017-08-18 2019-02-28 삼성전자주식회사 Unit for supplying precursor, substrate processing apparatus and method for manufacturing semiconductor device using the same
US11959170B2 (en) 2017-08-18 2024-04-16 Samsung Electronics Co., Ltd. Precursor supply unit, substrate processing system, and method of fabricating semiconductor device using the same

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