KR100258851B1 - Method for manufacturing oxide tantalum film - Google Patents

Method for manufacturing oxide tantalum film Download PDF

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KR100258851B1
KR100258851B1 KR1019960063420A KR19960063420A KR100258851B1 KR 100258851 B1 KR100258851 B1 KR 100258851B1 KR 1019960063420 A KR1019960063420 A KR 1019960063420A KR 19960063420 A KR19960063420 A KR 19960063420A KR 100258851 B1 KR100258851 B1 KR 100258851B1
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reactor
tantalum
organic solvent
source
thin film
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KR19980045243A (en
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오제욱
김의용
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김영환
현대반도체주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: A method for manufacturing an oxide tantalum film is provided to enhance the deposition speed of the oxide tantalum film to increase the amount of wafers processed pre unit time by using the activation reaction of organic solvent gas. CONSTITUTION: Liquid organic solvent(9a) within an organic solvent tank(9) is pressed by the pressure of carrier gas entered the organic solvent tank(9) to enter a vaporizer(5) through an organic solvent meter(10) and then enter a reactor(4). The gas of the organic solvent(9a) acts as a catalyst for activating the reaction within the reactor(4) to increase reaction speed. According to experimental result, the deposition speed of the oxide tantalum film is increased by at least 5 times relative to the deposition speed in a prior art.

Description

산화탄탈륨 박막 제조방법Tantalum oxide thin film manufacturing method

본 발명은 산화탄탈륨(Ta205) 박막 제조방법에 관한 것으로서 특히, 반도체 웨이퍼에 금속유기물 화학기상증착(MOCVD)방법으로 산화탄탈륨을 증착할 때 에틸알코올등의 유기 용매 가스를 첨가, 반응을 활성화시키도록 하여 산화탄탈륨의 증착속도를 향상시키도록 한 산화탄탈륨 박막 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a tantalum oxide (Ta205) thin film. In particular, an organic solvent gas such as ethyl alcohol is added to activate a reaction when depositing tantalum oxide on a semiconductor wafer by a metal organic chemical vapor deposition (MOCVD) method. The present invention relates to a method for manufacturing a tantalum oxide thin film to improve the deposition rate of tantalum oxide.

디램(DRAM) 등 고집적 반도체 소자의 캐패시터 유전막으로 사용하기 위해 산화탄탈륨 박막을 증착하게 되는데, 이는 탄탈륨소스와 산소를 반응기내로 유입시켜 웨이퍼의 표면에서 화학반응이 일어나 산화탄탈륨이 증착되도록 하는 방법에 이루어지며 이러한 방법은 도 1에 개략적으로 도시된 바와 같은 구성으로 된 장치에 의해 구현된다.A thin film of tantalum oxide is deposited for use as a capacitor dielectric film of a high-density semiconductor device, such as DRAM, in which a tantalum source and oxygen are introduced into a reactor to cause a chemical reaction on the surface of the wafer to deposit tantalum oxide. This method is implemented by an apparatus having a configuration as schematically shown in FIG. 1.

도면상 최상측의 유량계(MFC)(1)를 통과하여 반응기(4)내로 유입되는 질소 (N2)가스는 화학기상증착 전후에 상기 반응기(4)의 내부를 씻어내는 퍼지(purge) 질소가스이며, 상측에서 두 번째의 유량계(2)를 통과하여 상기 반응기(4)내로 유입되는 산소(02)가스는 탄탈륨을 산화시키는 산화제로 기능하는 것이다.Nitrogen (N2) gas flowing through the uppermost flow meter (MFC) 1 in the reactor 4 in the drawing is a purge nitrogen gas which washes the inside of the reactor 4 before and after chemical vapor deposition. Oxygen (02) gas flowing into the reactor 4 through the second flow meter 2 from the upper side functions as an oxidizing agent for oxidizing tantalum.

그리고, 상측에서 세 번째의 유량계(3)를 통과하여 기화기(5)로 유입됨과 아울러 탄탈륨소스탱크(6)로도 유입되는 질소가스는, 상기 탄탈륨소스탱크(6)에 압력을 가해 그 속에 담겨있는 액상의 탄탈륨 소스(6a)를 탄탈륨소스유량계(7)를 통해 상기 기화기(5)로 보낸 후, 상기 기화기(5)에서 기화되어 기상으로 변한 상기 탄탈륨 소스(6a)를 상기 반응기(4)내로 유입시키는 캐리어가스이다.In addition, nitrogen gas flowing into the vaporizer 5 through the third flowmeter 3 from the upper side and flowing into the tantalum source tank 6 is applied to the tantalum source tank 6 and is contained therein. A liquid tantalum source (6a) is sent to the vaporizer (5) through a tantalum source flowmeter (7), and then the tantalum source (6a) vaporized in the vaporizer (5) into the gas phase is introduced into the reactor (4) Is carrier gas.

그리고 상기 기화기(5)와 반응기(4)에 잔류하는 가스는 드라이펌프(8)에 의해 외부로 배출된다.And the gas remaining in the vaporizer 5 and the reactor 4 is discharged to the outside by the dry pump (8).

상기 탄탈륨 소스(6a)로는 탄탈륨과 유기물의 화합물인 금속유기물(metal organic, MO)이 주로 사용되는데, 그중에서도 주로 사용되는 것은 탄탈륨 펜타에톡사이드(tantalum pentaethoxide, Ta(OC2H5)5)이며, 이외에 탄탈륨 펜타메톡사이드 (tantalum pentamethoxide, Ta(OCH3)5)도 사용되고 또한, 무기화합물인 탄탈륨 펜타클로라이드(tantalum pentachloride, TaCl5), Ta(thd)4Cl등도 사용된다.The tantalum source (6a) is mainly used a metal organic compound (MO), a compound of tantalum and organic matter, among which is mainly used tantalum pentaethoxide (Ta (OC2H5) 5), in addition to tantalum Pentamethoxide (Tan (OCH3) 5) is also used, and tantalum pentachloride (TaCl5), Ta (thd) 4Cl, etc., which are inorganic compounds, are also used.

상기 반응기(4)내에서는 상기 기화기(5)를 거쳐 기상으로 공급되는 상기 탄탈륨 소스(6a)와, 다른 라인을 통해 반응기(4)로 공급되는 상기 산소가 웨이퍼(미도시)의 표면에서 화합반응을 일으켜 산화탄탈륨으로 되어 증착하게 되는데, 상기한 바와 같이 탄탈륨소스로는 주로 금속유기물을 이용하게 되므로 이러한 공정을 금속유기물 화학기상증착(metal organic chemical vapor deposition, MOCVD)이라 한다.In the reactor 4, the tantalum source 6a supplied to the gas phase through the vaporizer 5 and the oxygen supplied to the reactor 4 through another line are combined at the surface of a wafer (not shown). This process is called metal organic chemical vapor deposition (MOCVD), because the metal tantalum is mainly used as the tantalum source.

이때, 상기 반응기(4)는 여러장의 웨이퍼를 동시에 증착하는 배치타입(batch type)의 것이거나, 한 번에 한장의 웨이퍼를 증착하는 싱글타입(single type) 내지 매엽식의 것이다.At this time, the reactor (4) is of the batch type (batch type) for depositing a plurality of wafers at the same time, or of a single type (single type) to single-layer type for depositing one wafer at a time.

상기한 바와 같은 공정에 의해 산화탄탈륨이 증착되어 소정 두께의 산화탄탈륨 박막이 웨이퍼상에 형성된 후에는 열처리를 행한 후, 보통 질화티타늄(TiN)을 사용하여 상부전극을 증착시키고, 패턴형성과정을 거쳐 기타의 후속과정을 밟게 된다.After the tantalum oxide is deposited by the above-described process and a thin film of tantalum oxide having a predetermined thickness is formed on the wafer, heat treatment is performed. Then, the upper electrode is deposited using titanium nitride (TiN), followed by a pattern forming process. You will follow the other steps.

그러나, 상기한 바와 같은 종래의 방법에 의해 산화탄탈륨 박막을 증착하는 경우에는 박막의 성장속도가 느려 반도체공정에 적용될 때 단위시간내에 처리되는 웨이퍼의 양이 적은 문제점이 있었다.However, in the case of depositing a tantalum oxide thin film by the conventional method as described above, there is a problem that the growth rate of the thin film is slow and the amount of the wafer processed within a unit time is small when applied to a semiconductor process.

이러한 문제는 상기 반응기로 매엽식 반응기를 쓰는 경우에는 더욱 커지게 되어 매엽식 장비를 개발하는데 장애가 되기도 하였다.This problem has become larger when the single-layered reactor is used as the reactor, which has been an obstacle in developing the single-leafed equipment.

따라서, 상기한 바와 같은 문제점을 인식하여 안출한 본 발명의 목적은, 산화탄탈륨 박막의 증착속도를 향상시켜 단위시간내에 처리되는 웨이퍼의 양을 많게 할 수 있고, 이에 따라 매엽식 장비를 쓰는 것이 가능한 산화탄탈륨 박막 제조방법을 제공함에 있다.Accordingly, an object of the present invention, which is conceived by recognizing the above problems, can improve the deposition rate of a tantalum oxide thin film to increase the amount of wafers processed within a unit time, and thus it is possible to use sheet type equipment. It is to provide a tantalum oxide thin film manufacturing method.

제1도는 종래의 산화탄탈륨 박막 제조방법을 구현하는 장치의 구성을 보인 구성도.1 is a block diagram showing the configuration of a device for implementing a conventional method for manufacturing a tantalum oxide thin film.

제2도는 본 발명의 일실시례에 의한 산화탄탈륨 박막 제조방법을 구현하는 장치의 구성을 보인 구성도.2 is a block diagram showing the configuration of an apparatus for implementing a method for manufacturing a tantalum oxide thin film according to an embodiment of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1, 2, 3 : 유량계 4 : 반응기1, 2, 3: flow meter 4: reactor

5 : 기화기 6 : 탄탈륨소스탱크5: vaporizer 6: tantalum source tank

6a : 탄탈륨소스 7 : 탄탈륨소스유량계6a: tantalum source 7: tantalum source flowmeter

8 : 드라이펌프 9 : 유기용매탱크8: dry pump 9: organic solvent tank

9a : 유기용매 10 : 유기용매유량계9a: organic solvent 10: organic solvent flow meter

상기한 바와 같은 본 발명의 목적을 달성하기 위하여, 탄탈륨소스탱크에 담겨 있다가 캐리어가스의 압력에 의해 기화기로 보내어져 기화된 후 상기 캐리어가스에 의해 반응기로 유입되는 탄탈륨소스와, 상기 탄탈륨소스와 다른 라인을 통해 상기 반응기로 유입되는 산소가 반응기내에서 화학반응을 일으켜서 반응기의 하부에 놓여진 웨이퍼의 표면에 산화탄탈륨 박막을 형성하는, 화학기상증착에 의한 산화탄탈륨 박막 제조방법에 있어서, 상기 탄탈륨소스와 산소를 반응기로 유입시키는 과정에서 상기 탄탈륨소스에 대응하는 유기용매가스를 반응기내로 추가 유입시켜 상기 화학반응을 활성화시키는 것을 특징으로 하는 산화탄탈륨 박막제조방법이 제공된다.In order to achieve the object of the present invention as described above, the tantalum source, which is contained in the tantalum source tank and is sent to the vaporizer by the pressure of the carrier gas and vaporized and then introduced into the reactor by the carrier gas, and the tantalum source and In the method for producing a tantalum oxide thin film by chemical vapor deposition, the method of producing a tantalum oxide thin film by chemical vapor deposition, wherein the oxygen flowing into the reactor through another line causes a chemical reaction in the reactor to form a tantalum oxide thin film on the surface of the wafer placed below the reactor. In the process of introducing the oxygen into the reactor and the organic solvent gas corresponding to the tantalum source is further introduced into the reactor is provided a method for producing a tantalum oxide thin film, characterized in that to activate the chemical reaction.

이때 상기 유기 용매로는 에틸알콜(C2H5OH)이나 메틸알콜(CH3OH)등을 쓰게 되는데, 상기 탄탈륨소스로 탄탈륨 텐타에톡사이드를 쓰는 경우에는 에틸알콜을, 탄탈륨 펜타메톡사이드를 쓰는 경우에는 메틸알콜을 사용하는 것이 바람직하다.In this case, ethyl alcohol (C 2 H 5 OH) or methyl alcohol (CH 3 OH) is used as the organic solvent.In the case of using tantalum tentaethoxide as the tantalum source, ethyl alcohol is used, and methyl alcohol is used when tantalum pentamethoxide is used. It is preferable to use.

가스상태로 된 유기용매를 반응기로 유입시키는 방법에는 특별한 제약이 없으며 다음과 같은 방법을 생각할 수 있다.There is no particular restriction on the method of introducing the gaseous organic solvent into the reactor, and the following method can be considered.

우선, 에틸알콜이나 메틸알콜의 용기를 따로 두고, 상기 탄탈륨소스가 캐리어 가스에 의해 기화기로 보내지는 것과 같은 방식으로 캐리어 가스의 압력으로 상기 기화기로 보내어져 기화된 후 가스상태로 상기 반응기내로 유입되게 하는 방법이 가능하다.First, a container of ethyl alcohol or methyl alcohol is set aside, and the tantalum source is sent to the vaporizer at the pressure of the carrier gas in the same manner as that sent to the vaporizer by the carrier gas, and then vaporized and introduced into the reactor as gas. Is possible.

또한, 위와 같이 에틸알콜이나 메틸알콜의 용기를 따로 두고 있으나, 캐리어 가스의 압력에 의해 액체상태의 에틸알콜이나 메틸알콜을 상기 기화기가 아닌 상기 반응기로 직접보내며, 상기 에틸알콜이나 메틸알콜이 흐르는 라인을 가열함에 의해 기화시켜 가스상태로 상기 반응기로 들어가도록 하는 것도 가능하다.In addition, although the container of ethyl alcohol or methyl alcohol is set as above, the liquid ethyl alcohol or methyl alcohol is directly sent to the reactor, not the vaporizer, by the pressure of the carrier gas, and the ethyl alcohol or methyl alcohol flows in a line. It is also possible to vaporize by heating to enter the reactor in a gaseous state.

그리고, 상기한 바와 같이 따로 메틸알콜이나 에틸알콜의 용기를 두지 않고서도 탄탈륨소스에 메틸알콜이나 에틸알콜이 일정량 포함되어 있도록 하여 캐리어 가스의 압력에 의해 상기 기화기로 탄탈륨소스와 함께 보내어져 기화된 후 상기 반응기로 유입되도록 하는 것도 가능하다.Then, as described above, methyl alcohol or ethyl alcohol is contained in the tantalum source even without a container of methyl alcohol or ethyl alcohol, and the vaporized gas is sent together with the tantalum source to the vaporizer by the carrier gas pressure. It is also possible to enter the reactor.

도 2는 본 발명의 일실시례에 의한 산화탄탈륨 박막 제조방법을 구현하기 위해 구성된 장치의 구성도로서, 이에 도시한 바와 같이 본 발명의 방법을 구현하기 위한 장의 구성중에서 종래의 것과 상이한 주된 점은 에틸알콜이나 메틸알콜등의 유기용매 (9a)가 들어있는 유기용매탱크(9)를 따로 구비하고 있다는데 있다.Figure 2 is a block diagram of a device configured to implement a method for manufacturing a tantalum oxide thin film according to an embodiment of the present invention, as shown in the main configuration for implementing the method of the present invention is different from the conventional one An organic solvent tank 9 containing an organic solvent 9a such as ethyl alcohol or methyl alcohol is provided separately.

그리고, 상기 유기용매탱크에(9) 액상으로 담겨있는 유기용매(9a)는, 상기 유기용매탱크(9)로 유입되는 캐리어 가스인 질소의 압력에 의해 압송되어 유기용매유량계 (10)를 통과하여 기화기(5)로 들어가게 되고, 상기 기화기(5)에서 기화되어 반응기 (4)내로 유입되게 된다.Then, the organic solvent 9a contained in the liquid phase in the organic solvent tank 9 is pressurized by the pressure of nitrogen which is the carrier gas flowing into the organic solvent tank 9, and passes through the organic solvent flow meter 10. It enters the vaporizer 5 and is vaporized in the vaporizer 5 to be introduced into the reactor 4.

상기 반응기(4)내에서 일어나는 반응은 종래의 것과 동일하며, 이때 함께 공급되는 유기용매(9a)가스는 반응을 활성화시켜 반응속도를 증가시키는 촉매의 역할을 하게 되는데, 실험결과 산화탄탈륨 박막의 증착속도가 동일한 조건에서 종래의 방법을 사용하는 경우보다 5배이상 증가하였다.The reaction occurring in the reactor 4 is the same as the conventional one, and the organic solvent (9a) gas supplied together acts as a catalyst to increase the reaction rate by activating the reaction, the results of the deposition of a tantalum oxide thin film In the same condition, the speed was increased by more than five times compared with the conventional method.

도 2에 도시된 바와 같은 방법외의 유기용매 공급방법은 상술한 바와 같으며, 도면에 도시된 미설명 부호는 종래의 장치의 구성도를 도시한 도 1과 같아 설명을 생략한 것이다.The method of supplying the organic solvent other than the method as shown in FIG. 2 is as described above, and the reference numerals in the drawings are the same as those in FIG.

상기한 바와 같이, 본 발명의 산화탄탈륨 박막제조방법을 사용하는 경우에는 기상의 산화탄탈륨 소스와 산소가 반응하여 산화탄탈륨이 되는 과정을 유기용매가스가 활성화함에 의해 종래의 방법에 의한 산화탄탈륨 박막 성장속도보다 5배 이상 빠른 속도로 산화탄탈륨 박막을 성장시킬 수 있으므로, 단위시간당 처리하는 웨이퍼의 양이 많아지며, 이에 따라 매엽식 장비의 개발에도 문제가 없게 된다.As described above, in the case of using the method for producing a tantalum oxide thin film of the present invention, the growth of the tantalum oxide thin film by the conventional method is performed by activating the organic solvent gas in the process of reacting the vapor phase tantalum oxide source with oxygen to become tantalum oxide. Since the tantalum oxide thin film can be grown at a speed five times faster than the speed, the amount of wafers to be processed per unit time increases, and thus there is no problem in the development of the sheet type equipment.

Claims (6)

탄탈륨소스탱크에 담겨 있다가 캐리어가스의 압력에 의해 기화기로 보내어져 기화된 후 상기 캐리어가스에 의해 반응기로 유입되는 탄탈륨 소스와, 상기 탄탈륨 소스와 다른 라인을 통해 상기 반응기로 유입되는 산소가 반응기내에서 화학반응을 일으켜서 반응기의 하부에 놓여진 웨이퍼의 표면에 산화탄탈륨 박막을 형성하는, 화학기상증착에 의한 산화탄탈륨 박막제조방법에 있어서, 상기 탄탈륨 소스와 산소를 반응기로 유입시키는 과정에서 상기 탄탈륨 소스에 대응하는 유기용매가스를 반응기내로 추가 유입시켜 상기 화합반응을 활성화시키는 것을 특징으로 하는 산화탄탈륨 박막 제조방법.The tantalum source contained in the tantalum source tank and sent to the vaporizer by the pressure of the carrier gas, vaporized and then introduced into the reactor by the carrier gas, and the oxygen introduced into the reactor through a line different from the tantalum source, are introduced into the reactor. In the method for producing a tantalum oxide thin film by chemical vapor deposition, a chemical reaction occurs to form a tantalum oxide thin film on the surface of a wafer placed under the reactor, wherein the tantalum source and oxygen are introduced into the reactor in the process of introducing the tantalum source and oxygen into the reactor. And adding a corresponding organic solvent gas into the reactor to activate the compounding reaction. 제1항에 있어서, 상기 탄탈륨 소스로는 탄탈륨 펜타에톡사이드를 사용하고, 상기 유기용매로는 에틸알콜을 사용하는 것을 특징으로 하는 산화탄탈륨 박막제조방법.The method of claim 1, wherein tantalum pentaethoxide is used as the tantalum source, and ethyl alcohol is used as the organic solvent. 제1항에 있어서, 상기 탄탈륨 소스로는 탄탈륨 펜타메톡사이드를 사용하고, 상기 유기용매로는 메틸알콜을 사용하는 것을 특징으로 하는 산화탄탈륨 박막 제조방법.The method of claim 1, wherein tantalum pentamethoxide is used as the tantalum source, and methyl alcohol is used as the organic solvent. 제1항에 있어서, 상기 반응기로 공급되는 유기용매가스는 따로 구비된 유기용매 탱크에 담겨 있다가, 캐리어 가스의 압력에 의해 상기 기화기로 보내져 기화된 후 상기 반응기로 공급되는 것을 특징으로 하는 산화탄탈륨 박막 제조방법.The tantalum oxide of claim 1, wherein the organic solvent gas supplied to the reactor is contained in a separate organic solvent tank, and is sent to the vaporizer by vaporization of a carrier gas and vaporized and then supplied to the reactor. Thin film manufacturing method. 제1항에 있어서, 상기 반응기로 공급되는 유기용매가스는 따로 구비된 유기용매 탱크에 담겨 있다가, 캐리어 가스의 압력에 의해 반응기로 라인을 따라 보내어지며, 상기 라인에서 외부의 열원에 의해 가열되어 기화된 후 상기 반응기로 공급되는 것을 특징으로 하는 산화탄탈륨 박막 제조방법.According to claim 1, wherein the organic solvent gas supplied to the reactor is contained in an organic solvent tank provided separately, sent along the line to the reactor by the pressure of the carrier gas, is heated by an external heat source in the line Tantalum oxide thin film manufacturing method characterized in that the vaporized and then supplied to the reactor. 제1항에 있어서, 상기 반응기로 공급되는 유기용매가스는 상기 탄탈륨소스탱크에 탄탈륨 소스와 함께 담겨 있다가, 캐리어 가스의 압력에 의해 상기 기화기로 탄탈륨 소스와 함께 유입되어 기화된 후 상기 반응기로 공급되는 것을 특징으로 하는 산화탄탈륨 박막 제조방법.According to claim 1, wherein the organic solvent gas supplied to the reactor is contained in the tantalum source tank with the tantalum source, the gas is introduced into the vaporizer with the tantalum source to the vaporizer by the pressure of the carrier gas is supplied to the reactor Tantalum oxide thin film production method characterized in that the.
KR1019960063420A 1996-12-10 1996-12-10 Method for manufacturing oxide tantalum film KR100258851B1 (en)

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Citations (1)

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Publication number Priority date Publication date Assignee Title
JPH01179423A (en) * 1988-01-08 1989-07-17 Nec Corp Manufacture of insulating thin film

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01179423A (en) * 1988-01-08 1989-07-17 Nec Corp Manufacture of insulating thin film

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