KR950007150A - 반도체 박막트랜지스터(tft)제조방법 - Google Patents

반도체 박막트랜지스터(tft)제조방법 Download PDF

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KR950007150A
KR950007150A KR1019930015254A KR930015254A KR950007150A KR 950007150 A KR950007150 A KR 950007150A KR 1019930015254 A KR1019930015254 A KR 1019930015254A KR 930015254 A KR930015254 A KR 930015254A KR 950007150 A KR950007150 A KR 950007150A
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thin film
oxide
manufacturing
single crystal
crystal substrate
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KR1019930015254A
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KR960015933B1 (ko
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라사균
김재정
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문정환
금성일렉트론 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 반도체 장치의 제조방법에 관한 것으로서 특히 박막트랜지스터를 형성하기 위한 바디 폴리실리콘 형성시, 알갱이 크기(grain size)가 큰 바디폴리실리콘을 형성하여 고집적 소자에서 요구되는 온/오프 전류비를 높여주는 반도체소자의 바디 폴리실리콘 전극 형성하는 반도체 박막트랜지스터의 제조 방법에 관한 것이다.
이를 위하여 바디 폴리실리콘을 두껍게 증착하여 알갱이 크기가 큰 바디 폴리실리콘막을 형성한 후 이를 화학적 건식 식각 방식으로 고집적 소자에 적합한 두께만큼 얇게 식각함으로써 전자의 이동도를 높여 주어 온전류(on cureent)가 높아짐으로써 온/오프 전류비(on/off ratio)를 크게 증가시켜 반도체소자의 전기적 특성을 월등히 개선할 수 있는 것이다.

Description

반도체 박막트랜지스터(TFT)제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 강유전체 박막소자의 구조도.

Claims (7)

  1. 산화물 단결정기판(1)과, 상기 산화물 단결정기판(1)상의 소정영역에 형성된 금속산화물로 이루어진 하부전극(12), 상기 하부전극(12)에 형성된 강유전체막(3), 및 상기 강유전체막(3)상에 형성된 금속으로 이루어진 상부전극(4)을 포함하는 것을 특징으로 하는 강유전체 박막소자.
  2. 제1항에 있어서, 상기 산화물 단결정기판(1)과 하부전극(12)사이에 식각정지층(13)이 더 포함되는 것을 특징으로 하는 강유전체 박막소자.
  3. 산화물 단결정기판(1)상에 금속산화물을 증착하여 하부전극(12)을 형성하는 공정과, 상기 하부전극(12)상에 강유전체막(3)을 형성하는 공정, 상기 강유전체막(3)상에 금속을 증착하여 상부전극(4)을 형성하는 공정, 및 상기 산화물 단결정기판(1)의 후면을 식각하는 공정을 구비한 것을 특징으로 하는 강유전체 박막소자의 제조방법.
  4. 제3항에 있어서, 상기 금속산화물은 Sr산화물, La산화물, Co산화물 중 어느 하나이거나 이들 중의 2종이상으로 이루어진 화합물임을 특징으로 하는 강유전체 박막소자의 제조방법.
  5. 제3항에 있어서, 상기 하부전극(12)을 형성하는 공정전에 상기 산화물 단결정기판(1)상에 식각정지층(13)을 형성하는 공정이 더 구비되는 것을 특징으로 하는 강유전체 박막소자의 제조방법.
  6. 제5항에 있어서, 상기 식각정지층(13)은 상기 산화물 단결정기판(1)의 후면식각시에 식각액에 식각되지 않는 물질로 형성함을 특징으로 하는 강유전체 박막소자의 제조방법.
  7. 제3항에 있어서, 상기 강유전체막(3)은 단축방향성장시켜 형성함을 특징으로 하는 강유전체 박막소자의 제조방법
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930015254A 1993-08-06 1993-08-06 반도체 박막 트랜지스터(tft) 제조방법 KR960015933B1 (ko)

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Application Number Priority Date Filing Date Title
KR1019930015254A KR960015933B1 (ko) 1993-08-06 1993-08-06 반도체 박막 트랜지스터(tft) 제조방법

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Application Number Priority Date Filing Date Title
KR1019930015254A KR960015933B1 (ko) 1993-08-06 1993-08-06 반도체 박막 트랜지스터(tft) 제조방법

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KR950007150A true KR950007150A (ko) 1995-03-21
KR960015933B1 KR960015933B1 (ko) 1996-11-23

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