KR950006598B1 - Manufacturing method for multiple color el device - Google Patents
Manufacturing method for multiple color el device Download PDFInfo
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- KR950006598B1 KR950006598B1 KR1019920015320A KR920015320A KR950006598B1 KR 950006598 B1 KR950006598 B1 KR 950006598B1 KR 1019920015320 A KR1019920015320 A KR 1019920015320A KR 920015320 A KR920015320 A KR 920015320A KR 950006598 B1 KR950006598 B1 KR 950006598B1
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- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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Abstract
Description
제1도는 종래기술 및 본 발명 기술에 의한 다색 이엘(EL)소자의 구조도.1 is a structural diagram of a multi-color EL device according to the prior art and the present invention.
제2a 내지 c도는 종래기술 및 본 발명 기술에 의한 다색 이엘(EL)소자의 제조 공정도.2a to c is a manufacturing process diagram of a multi-color EL device according to the prior art and the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 유리기판 2 : 투명전극1 glass substrate 2 transparent electrode
3 : 제1절연층 4 : 제1발광층3: first insulating layer 4: first light emitting layer
5 : 포토레지스터(PR) 6 : 제2발광층5: photoresist (PR) 6: second light emitting layer
7 : 제2절연층 8 : 배면전극7: second insulating layer 8: back electrode
본 발명은 다색 이엘(EL)소자의 제조방법에 관한 것으로, 발광층을 에칭(etching) 시킬때 BCl3와 GaS를 사용하여 리액티브 이온(Reactive Ion) 에칭을 시켜 에칭특성을 향상시킨 다색 이엘(EL)소자의 제조방법에 관한 것이다.The present invention relates to a method for manufacturing a multi-color EL device, wherein a multi-color EL is improved by etching reactive ions using BCl 3 and GaS when etching the light emitting layer. The present invention relates to a method for manufacturing an element.
종래 기술에 의한 다색 이엘(EL)소자의 제조방법을 제1도에 도시한 종래 다색 EL소자의 구조도 및 제2a도 내지 c도에 도시된 종래 다색 EL소자의 제조공정도를 참조해 설명하면 다음과 같다.A method for manufacturing a multicolor EL device according to the prior art will be described with reference to the structure diagram of the conventional multicolor EL device shown in FIG. 1 and the manufacturing process diagram of the conventional multicolor EL device shown in FIGS. Same as
먼저, 유리기판(1)위에 투명전극(2)이 증착된다. 그 투명전극(2)으로는 ITO(Indium Tin Oxide)막이 사용되며, 이는 서퍼터링(Sputtering)방법에 의해 약 2500Å정도의 두께로 증착하고, 포토리도그라피(Photolithograpy)에 의해 패턴을 형성하여 습식에칭(Wetetching)에 의해 ITO패턴을 형성한다.First, the transparent electrode 2 is deposited on the glass substrate 1. As the transparent electrode 2, an indium tin oxide (ITO) film is used, which is deposited to a thickness of about 2500 kW by the sputtering method, and wet etching by forming a pattern by photolithograpy. (Wetetching) forms an ITO pattern.
그 투명전극(2)위에 제1절연층(3)이 증착되며, 그 제1절연층(3)으로는 Si3N4, SiON, BaTa2O6등의 절연체가 사용된다.The first insulating layer 3 is deposited on the transparent electrode 2, and an insulator such as Si 3 N 4 , SiON, BaTa 2 O 6 is used as the first insulating layer 3.
상기 제1절연층(3)의 위에 제1발광층(4)이 증착된다. 그 제1발광층(4)으로는, ZnSi : Sm이 사용되고, 포토레지스터(5)를 사용하여 패턴형성후 리액티브 이온 에칭방법으로 제2a도에 도시된 바와같이 상기 제1발광층(4)이 격간으로 남도록 선택 에칭하게 된다. 이때 사용되는 가스로는 BCl3와 Cl2가스가 사용된다.The first light emitting layer 4 is deposited on the first insulating layer 3. As the first light emitting layer 4, ZnSi: Sm is used, and the first light emitting layer 4 is spaced apart as shown in FIG. 2a by a reactive ion etching method after forming a pattern using the photoresist 5. Select etching to remain. In this case, BCl 3 and Cl 2 gas are used as the gas.
이후, 상기 제1광발광층(4)사이에 제2발광층(6)이 증착된다. 그 제2발광층(6)으로는 ZnS : Tb가 사용되며, 제2b도에 도시된 바와같이 전표면에 걸쳐 상기 ZnS : Tb를 증착한후, 리프트-오프(Lift-off)에 의해 상기 제1발광층(4)위에 남아있는 포토레지스터(PR)까지 제거한다. 결과적으로 제2c도에 도시된 바와같이 상기 제1발광층(4)과 상기 제2발광층(6)이 격간으로 병렬 배치된다. 즉, ZnSi : Sm(Red)과 ZnS : Tb(GREEN)가 병렬배치된다.Thereafter, a second light emitting layer 6 is deposited between the first light emitting layer 4. ZnS: Tb is used as the second light emitting layer 6, and after depositing ZnS: Tb over the entire surface as shown in FIG. 2b, the first light emitting layer is lifted off. The photoresist PR remaining on the light emitting layer 4 is removed. As a result, as shown in FIG. 2C, the first light emitting layer 4 and the second light emitting layer 6 are arranged in parallel at intervals. That is, ZnSi: Sm (Red) and ZnS: Tb (GREEN) are arranged in parallel.
제1발광층(4) 및 제2발광층(6)의 위에 절연층(7)으로 Si3N4, SiON, BaTa2o6등의 절연체가 증착된다. 이후, 배면전극(8)으로 A1을 서퍼터링 또는 저항가열법에 의해 증착한후, 포토리도그라피와 습식에칭에 의해 상기 투명전극(2)과 수직이 되도록 패터닝하여 다색 이엘(EL)소자를 제작하였다.Insulators such as Si 3 N 4 , SiON, BaTa 2 O 6, and the like are deposited on the insulating layer 7 on the first light emitting layer 4 and the second light emitting layer 6 . Subsequently, A1 is deposited on the back electrode 8 by the surfering or resistance heating method, and then patterned to be perpendicular to the transparent electrode 2 by photolithography and wet etching to fabricate a multicolor EL device. It was.
이와같은 종래 기술에 의한 공정에 의해 제조된 다색 EL소투명전극(2)과 배면전극(8) 사이에 약 200V의 교류전압을 인가하면, 상기 제1발광층(4) 및 상기 제2발광층(6) 내에 고전계(약 10V/cm)가 형성되고, 절연층(3)(7)과 발광층(4)(6)의 계면에서 전자가 생성되고, 생성된 전자가 전도대로 터널링(Tunnelling)된다. 이때 생성된 전자가 고전계에 의해 가속되어 형광층 내의 발광중심에 직접충돌되어 여기된다.When an alternating voltage of about 200 V is applied between the multicolor EL transparent electrode 2 and the back electrode 8 manufactured by such a conventional process, the first light emitting layer 4 and the second light emitting layer 6 are applied. ), A high electric field (about 10 V / cm) is formed, electrons are generated at the interface between the insulating layers 3 (7) and the light emitting layers 4 and 6, and the generated electrons are tunneled with conduction bands. At this time, the generated electrons are accelerated by the high electric field and directly collide with the emission center in the fluorescent layer to be excited.
이와같이 여기된 발광중신의 전자가 여기상태에서 기저상태로 떨어질때 그 에너지차 만큼의 에너지를 갖는 고유파장의 광을 방출하게 된다. 상기 제2발광층(6)인 ZnS : Tb는 녹색(Green)이 발광되고, 상기 제1발광층(4)인 ZnSi : Sm는 적색(Red) 발광을 하게 된다.When the electrons of the excited light emitting body fall from the excited state to the ground state, the emitted light of the natural wavelength having the energy of the energy difference is emitted. The second light emitting layer 6, ZnS: Tb, emits green light, and the first light emitting layer 4, ZnSi: Sm, emits red light.
그러나, 이와같은 종래 기술에 의한 다색 EL소자의 제조방법에 있어서는, 상기 제1발광층(4)을 선택 에칭할때에 BCl3와 Cl2가스가 사용되는데, 이는 ZnS에서 발생되는 설퍼(Sulfur)가 반응하지 않으므로, 챔버내에 잔유하게 되고, 이로인해 소자자체에 결함을 유발시킬 수 있으며, 리액티브 이온 에칭장비의 성능을 저하시키게 되는 문제점이 있다.However, in the method of manufacturing a multicolor EL device according to the related art, BCl 3 and Cl 2 gases are used to selectively etch the first light emitting layer 4, which is a sulfur generated in ZnS. Since it does not react, it remains in the chamber, which may cause a defect in the device itself, and may cause a problem of degrading the performance of the reactive ion etching equipment.
본 발명은 이와같은 문제점을 해소시키고자 제1발광층의 에칭에 BCl3와 H2를 사용하여 에칭특성을 향상시켜 다색 EL소자의 성능을 향상시키기 위한 댜색 EL소자의 제조방법을 창안한 것으로, 이를 상세히 설명하면 다음과 같다.The present invention has been devised a method of manufacturing a white EL device for improving the performance of the multi-color EL device by improving the etching characteristics by using BCl 3 and H 2 in the etching of the first light emitting layer to solve this problem, It will be described in detail as follows.
본 발명에 의한 다색 EL소자의 구조는 제1도에 도시된 종래의 다색 EL소자의 구조와 동일하고, 또한, 제조 공정에 있어서도 종래 기술에 의한 제조공정과 동일하다.The structure of the multicolor EL element according to the present invention is the same as that of the conventional multicolor EL element shown in FIG. 1, and also in the manufacturing process is the same as the manufacturing process according to the prior art.
다면, 제1발광층(4)을 에칭할때에 사용되는 가스를 BCl3와 H2를 사용하는 점만 다르다.If it is, the only difference is that the gas used when etching the first light emitting layer 4 uses BCl 3 and H 2 .
즉, 본 발명에서는 상기 제1발광층(4)을 증착한후, 제2a도에 도시된 바와같이 그 제1발광층(4)을 선택 에칭할때에 BCl3와 H2가스를 사용하여 에칭특성을 향상시키는 것이 특징이다.That is, in the present invention, after depositing the first light emitting layer 4, when the first light emitting layer 4 is selectively etched as shown in FIG. 2a, the etching characteristics are used by using BCl 3 and H 2 gas. It is characteristic to improve.
상기와 같은 BCl3와 H2가스를 사용하게 되면, 제1발광층(4)으로 사용되는 ZnSi : Sm 의 ZnS와 상기 BCl3및 H2와의 사이에서 다음 반응식과 같은 반응이 유발된다.When the BCl 3 and H 2 gas as described above are used, a reaction is generated between ZnS of ZnSi: Sm used as the first light emitting layer 4 and BCl 3 and H 2 , as shown in the following reaction formula.
Zn+Cl2→ZnCl2(g)Zn + Cl 2 → ZnCl 2 (g)
S+H2→H2S(g)S + H 2 → H 2 S (g)
상기와 같은 반응에 의해 쉽게 가스상태가 되므로, 에칭 비율등의 에칭특성이 향상되며, 모두 기체 상태이므로, 프로세스 챔버의 오염을 줄일수 있게 된다. 이때 프로세스 압력이 10mTorr이고, 파워덴티시(Power Density)가 0.8W/㎠이다.Since the gas is easily gasified by the above reaction, the etching characteristics such as the etching rate are improved, and since all are gaseous, the contamination of the process chamber can be reduced. At this time, the process pressure is 10 mTorr, and the power density is 0.8 W / cm 2.
이상에서 설명한 바와같이 본 발명에 의하면, 제1발광층을 선택적 에칭을 할때에 BCl3와 H2를 사용하므로,ZnS가 모두 반응하여 쉽게 기체화된다. 따라서, 에칭특성을 향상시키게 되고, 프로세스 챔버내의 오염을 줄일수 있는 효과가 있다. 이로인해 다색 EL소자의 성능을 향상시킬수 있는 효과가 있다.As described above, according to the present invention, since BCl 3 and H 2 are used in the selective etching of the first light emitting layer, all of the ZnS reacts and is easily vaporized. Therefore, the etching characteristics are improved, and the contamination in the process chamber can be reduced. This has the effect of improving the performance of the multicolor EL device.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920015320A KR950006598B1 (en) | 1992-08-25 | 1992-08-25 | Manufacturing method for multiple color el device |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019920015320A KR950006598B1 (en) | 1992-08-25 | 1992-08-25 | Manufacturing method for multiple color el device |
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| Publication Number | Publication Date |
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| KR940004518A KR940004518A (en) | 1994-03-15 |
| KR950006598B1 true KR950006598B1 (en) | 1995-06-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019920015320A KR950006598B1 (en) | 1992-08-25 | 1992-08-25 | Manufacturing method for multiple color el device |
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