KR950004668A - 반도체레이저 - Google Patents
반도체레이저 Download PDFInfo
- Publication number
- KR950004668A KR950004668A KR1019940018056A KR19940018056A KR950004668A KR 950004668 A KR950004668 A KR 950004668A KR 1019940018056 A KR1019940018056 A KR 1019940018056A KR 19940018056 A KR19940018056 A KR 19940018056A KR 950004668 A KR950004668 A KR 950004668A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- cladding layer
- semiconductor laser
- optical waveguide
- cladding
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Abstract
실온(室溫)을 비롯한 고온에서 연속발진가능한 Ⅱ - Ⅵ족 화합물반도체를 사용한 반도체레이저를 실현한다.
임계치전류 Ith(A), n형 클래드층, 활성층 및 p형 클래드층으로 이루어지는 다이오드의 상승전압 Vth(V), 다이오드의 상승 후의 미분저항 Rδ(Ω), 열저항 Rt(K/W), 특성온도 T0(K)의 특성으로 펄스발진하는 Ⅱ - Ⅵ족 화합물반도체를 사용한 반도체레이저에 있어서, α≡(Rt/T0) IthVth, β≡(Rt/T0) RδIth 2로 2개의 양 α,β을 정의하였을 때의 (α,β)가 aβ평면상에 있어서의 직선 α=0, 직선 β=0 및 t를 파라미터로 하는 곡선((2 1nt-1)/t, (1-1nt/t2)에 의해 둘러싸인 영역내에 존재하도록 설계 제조를 행한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 3 도 및 제 4 도는 본 발명의 제 1 실시예에 의한 반도체레이저를 나타낸 단면도, 제 5 도는 본 발명의 제 1 실시예에 의한 반도체레이저를 히트싱크상에 마운트한 상태를 나타낸 단면도, 제 6 도는 본 발명의 제 1 실시예에 의한 반도체레이저의 제조에 사용되는 MBE장치의 일예를 나타낸 약선도.
Claims (3)
- 제 1 도전형의 제 1 의 클래드층과, 상기 제 1 의 클래드층상에 적층된 활성층과, 상기 활성층상에 적층된 제 2 도전형의 제 2 클래드층을 가지고, 상기 제 1 의 클래드층, 상기 활성층 및 상기 제 2의 클래드층은 Ⅱ - Ⅵ족 화합물반도체로 이루어지고, 임계치전류 Ith(A), 상기 제 1 의 클래드층, 상기 활성층 및 상기 제 2 의 클래드층에 의해 구성되는 다이오드이 상승전압 Vth, 상기 다이오드의 상승후의 미분저항 Rδ(Ω) 열저항 Rt(K/W), 특성온도 T0(K)의 특성으로 펄스발진하는 반도체레이저에 있어서,α≡(Rt/T0) IthVthβ≡(Rt/T0) RδIth 2,로 2개의 양 α,β을 정의하였을때, (α,β)가,αβ 평면상에 있어서의 직선 α=0, 직선 직선 β=0 및 t를 파라미터로 하는 곡선(2 1nt-1)/t, (1-1nt)/t2에 의해 둘러싸인 영역내에 존재하는 것을 특징으로 하는 반도체레이저.
- 제 1 항에 있어서, 상기 제 1 의 클래드층과 상기 활성층과의 사이에 제 1 의 광도파층을 가지고, 상기 제 2 의 클래드층과 상기 활성층과의 사이에 제 2 의 광도파층을 가지고, 상기 제 1 의 광도파층 및 상기 제 2 의 광도파층은 Ⅱ - Ⅵ족 화합물 반도체로 이루어지는 것을 특징으로 하는 반도체레이저.
- 제 1 항 또는 제 2 항에 있어서, 상기 제 1 의 클래드층 및 상기 제 2 의 클래드층을 구성하는 상기 Ⅱ - Ⅵ족 화합물반도체는 ZnMgSSe계 화합물반도체인 것을 특징으로 하는 반도체레이저.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP93-205,919 | 1993-07-28 | ||
JP05205919A JP3116675B2 (ja) | 1993-07-28 | 1993-07-28 | 半導体レーザー |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950004668A true KR950004668A (ko) | 1995-02-18 |
KR100302639B1 KR100302639B1 (ko) | 2001-11-30 |
Family
ID=16514921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940018056A KR100302639B1 (ko) | 1993-07-28 | 1994-07-26 | 반도체레이저 |
Country Status (4)
Country | Link |
---|---|
US (4) | US5625634A (ko) |
EP (1) | EP0638969A1 (ko) |
JP (1) | JP3116675B2 (ko) |
KR (1) | KR100302639B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102209601B1 (ko) | 2020-01-29 | 2021-01-28 | 손용학 | 평면 및 모따기 연속가공용 밀링커터 |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2298735A (en) * | 1995-03-08 | 1996-09-11 | Sharp Kk | Semiconductor device having a miniband |
DE29511927U1 (de) * | 1995-07-24 | 1997-01-09 | Thera Ges Fuer Patente | Lichtpolymerisationsgerät |
US20100125291A1 (en) * | 1995-08-31 | 2010-05-20 | Rizoiu Ioana M | Drill and flavored fluid particles combination |
US20060240381A1 (en) | 1995-08-31 | 2006-10-26 | Biolase Technology, Inc. | Fluid conditioning system |
US20060241574A1 (en) * | 1995-08-31 | 2006-10-26 | Rizoiu Ioana M | Electromagnetic energy distributions for electromagnetically induced disruptive cutting |
US6288499B1 (en) * | 1997-06-12 | 2001-09-11 | Biolase Technology, Inc. | Electromagnetic energy distributions for electromagnetically induced mechanical cutting |
US20090143775A1 (en) * | 1995-08-31 | 2009-06-04 | Rizoiu Ioana M | Medical laser having controlled-temperature and sterilized fluid output |
US7320594B1 (en) | 1995-08-31 | 2008-01-22 | Biolase Technology, Inc. | Fluid and laser system |
EP0841707A3 (en) * | 1996-11-11 | 2000-05-03 | Sony Corporation | Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus |
JP3897186B2 (ja) * | 1997-03-27 | 2007-03-22 | シャープ株式会社 | 化合物半導体レーザ |
US6088375A (en) * | 1998-02-27 | 2000-07-11 | Philips Electronics North America Corporation | Semiconductor device comprising p-type ZnMgSSe layer |
US6466597B1 (en) * | 1998-06-17 | 2002-10-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device |
US6456638B1 (en) * | 1999-02-08 | 2002-09-24 | Fuji Photo Film Co., Ltd. | High-power short-wavelength semiconductor light emitting device having active layer with increased indium content |
JP4274393B2 (ja) * | 1999-02-26 | 2009-06-03 | 富士フイルム株式会社 | 半導体発光装置 |
JP2000188423A (ja) * | 2000-01-01 | 2000-07-04 | Nichia Chem Ind Ltd | 窒化物半導体素子の形成方法 |
JP2001332816A (ja) * | 2000-05-19 | 2001-11-30 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
US20080157690A1 (en) * | 2001-05-02 | 2008-07-03 | Biolase Technology, Inc. | Electromagnetic energy distributions for electromagnetically induced mechanical cutting |
JP2003037331A (ja) * | 2001-07-26 | 2003-02-07 | Sharp Corp | 半導体レーザ装置 |
US6841406B2 (en) * | 2001-11-06 | 2005-01-11 | Edward Brittain Stokes | Methods and apparatus for a semiconductor device |
JP2003229600A (ja) * | 2001-11-27 | 2003-08-15 | Sharp Corp | 半導体発光素子 |
JP2003198044A (ja) * | 2001-12-27 | 2003-07-11 | Sharp Corp | 半導体レーザ素子およびその製造方法、並びに、レーザバー固定装置 |
US20100151406A1 (en) | 2004-01-08 | 2010-06-17 | Dmitri Boutoussov | Fluid conditioning system |
SI1748743T1 (sl) * | 2004-01-22 | 2013-04-30 | Biolase, Inc. | Elektromagnetno inducirana naprava za zdravljenje |
JP4594070B2 (ja) * | 2004-04-06 | 2010-12-08 | 三菱電機株式会社 | 半導体レーザ素子及びその製造方法 |
CN101432102A (zh) * | 2004-07-27 | 2009-05-13 | 生物激光科技公司 | 具有触觉反馈尖头套箍的反角旋转机头 |
US7970030B2 (en) * | 2004-07-27 | 2011-06-28 | Biolase Technology, Inc. | Dual pulse-width medical laser with presets |
JP2006053690A (ja) * | 2004-08-10 | 2006-02-23 | Ricoh Co Ltd | 画像処理装置、画像処理方法、画像処理プログラムおよび記録媒体 |
EP2438879A3 (en) * | 2004-08-13 | 2013-01-23 | Biolase, Inc. | Dual pulse-width medical laser with presets |
JP2007266575A (ja) * | 2006-02-28 | 2007-10-11 | Sanyo Electric Co Ltd | 半導体レーザ素子及び半導体レーザ装置 |
US20080277678A1 (en) * | 2007-05-08 | 2008-11-13 | Huga Optotech Inc. | Light emitting device and method for making the same |
US8493649B2 (en) | 2008-10-23 | 2013-07-23 | Bae Systems Information And Electronic Systems Integration Inc. | Method of producing nonlinear optical crystal CdSiP2 |
US8379296B2 (en) * | 2008-10-23 | 2013-02-19 | Bae Systems Information And Electronic Systems Integration Inc. | Nonlinear optical CdSiP2 crystal and producing method and devices therefrom |
JP5435439B2 (ja) | 2012-06-22 | 2014-03-05 | Smc株式会社 | 二方弁 |
EP2919031B1 (en) * | 2014-03-14 | 2020-08-05 | Avago Technologies International Sales Pte. Limited | Locationing via staged antenna utilization |
EP3646420B1 (en) | 2017-06-30 | 2022-06-01 | Oulun yliopisto | Method of manufacturing optical semiconductor apparatus and the apparatus |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5093786A (ko) | 1973-12-21 | 1975-07-26 | ||
JPH067618B2 (ja) * | 1983-12-26 | 1994-01-26 | 株式会社東芝 | 半導体レ−ザ装置 |
JP2809691B2 (ja) | 1989-04-28 | 1998-10-15 | 株式会社東芝 | 半導体レーザ |
JP3160914B2 (ja) * | 1990-12-26 | 2001-04-25 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体レーザダイオード |
JPH05102612A (ja) | 1991-10-07 | 1993-04-23 | Matsushita Electric Ind Co Ltd | レーザダイオード |
JP3217490B2 (ja) * | 1992-09-29 | 2001-10-09 | 株式会社東芝 | 半導体発光装置 |
US5363395A (en) * | 1992-12-28 | 1994-11-08 | North American Philips Corporation | Blue-green injection laser structure utilizing II-VI compounds |
JPH0773140B2 (ja) * | 1993-02-09 | 1995-08-02 | 日本電気株式会社 | 半導体レーザ |
MY111898A (en) * | 1993-07-02 | 2001-02-28 | Sony Corp | Semiconductor laser |
-
1993
- 1993-07-28 JP JP05205919A patent/JP3116675B2/ja not_active Expired - Lifetime
-
1994
- 1994-07-15 US US08/275,374 patent/US5625634A/en not_active Ceased
- 1994-07-26 KR KR1019940018056A patent/KR100302639B1/ko not_active IP Right Cessation
- 1994-07-26 EP EP94111651A patent/EP0638969A1/en not_active Withdrawn
-
1997
- 1997-03-31 US US08/829,064 patent/US5764672A/en not_active Expired - Lifetime
-
1999
- 1999-03-01 US US09/260,865 patent/USRE37177E1/en not_active Expired - Lifetime
-
2000
- 2000-06-08 US US09/590,647 patent/USRE38339E1/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102209601B1 (ko) | 2020-01-29 | 2021-01-28 | 손용학 | 평면 및 모따기 연속가공용 밀링커터 |
Also Published As
Publication number | Publication date |
---|---|
JP3116675B2 (ja) | 2000-12-11 |
USRE37177E1 (en) | 2001-05-15 |
KR100302639B1 (ko) | 2001-11-30 |
US5764672A (en) | 1998-06-09 |
USRE38339E1 (en) | 2003-12-02 |
US5625634A (en) | 1997-04-29 |
JPH0745908A (ja) | 1995-02-14 |
EP0638969A1 (en) | 1995-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR950004668A (ko) | 반도체레이저 | |
Holonyak et al. | Coherent (visible) light emission from Ga (As1− xPx) junctions | |
Kressel et al. | Large‐Optical‐Cavity (AlGa) As–GaAs Heterojunction Laser Diode: Threshold and Efficiency | |
DE69301821D1 (de) | Ii-vi laserdiode mit einzelnem quantum well ohne mantelschichten | |
US3445686A (en) | Solid state transformer | |
KR900005656A (ko) | 반도체 레이저 장치 | |
US3938172A (en) | Semiconductor injection laser | |
US4216485A (en) | Optical transistor structure | |
US5789772A (en) | Semi-insulating surface light emitting devices | |
US4602370A (en) | Large optical cavity laser having a plurality of active layers | |
GB995950A (en) | Lasers | |
Yamada et al. | Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum well intermixing | |
US4768200A (en) | Internal current confinement type semiconductor light emission device | |
US3531735A (en) | Semiconductor laser having grooves to prevent radiation transverse to the optical axis | |
Botez et al. | Very low threshold‐current temperature sensitivity in constricted double‐heterojunction AlGaAs lasers | |
KR930024241A (ko) | 반도체 레이저장치 및 이의 제조방법 | |
US3916339A (en) | Asymmetrically excited semiconductor injection laser | |
US3526851A (en) | Filamentary structure injection laser having a very narrow active junction | |
JPS566480A (en) | Semiconductor light emitting diode | |
Hori et al. | Effect of device parameters on bistable semiconductor laser | |
Kasemset et al. | Longitudinal mode behavior of PbSnTe buried heterostructure lasers | |
JPS604278A (ja) | 発光ダイオ−ド | |
KR100343946B1 (ko) | 웨이브가이드 광 싸이리스터 | |
KR950012861A (ko) | 반도체 레이저 다이오드 | |
JPS6476784A (en) | Edge light-emitting diode |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130621 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20140701 Year of fee payment: 14 |
|
EXPY | Expiration of term |