KR950004668A - 반도체레이저 - Google Patents

반도체레이저 Download PDF

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Publication number
KR950004668A
KR950004668A KR1019940018056A KR19940018056A KR950004668A KR 950004668 A KR950004668 A KR 950004668A KR 1019940018056 A KR1019940018056 A KR 1019940018056A KR 19940018056 A KR19940018056 A KR 19940018056A KR 950004668 A KR950004668 A KR 950004668A
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layer
cladding layer
semiconductor laser
optical waveguide
cladding
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KR1019940018056A
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KR100302639B1 (ko
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마사가즈 우끼다
아끼라 이시바시
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오가 노리오
소니 가부시기가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

실온(室溫)을 비롯한 고온에서 연속발진가능한 Ⅱ - Ⅵ족 화합물반도체를 사용한 반도체레이저를 실현한다.
임계치전류 Ith(A), n형 클래드층, 활성층 및 p형 클래드층으로 이루어지는 다이오드의 상승전압 Vth(V), 다이오드의 상승 후의 미분저항 Rδ(Ω), 열저항 Rt(K/W), 특성온도 T0(K)의 특성으로 펄스발진하는 Ⅱ - Ⅵ족 화합물반도체를 사용한 반도체레이저에 있어서, α≡(Rt/T0) IthVth, β≡(Rt/T0) RδIth 2로 2개의 양 α,β을 정의하였을 때의 (α,β)가 ａβ평면상에 있어서의 직선 α=0, 직선 β=0 및 t를 파라미터로 하는 곡선((2 1nt-1)/t, (1-1nt/t2)에 의해 둘러싸인 영역내에 존재하도록 설계 제조를 행한다.

Description

반도체레이저
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 3 도 및 제 4 도는 본 발명의 제 1 실시예에 의한 반도체레이저를 나타낸 단면도, 제 5 도는 본 발명의 제 1 실시예에 의한 반도체레이저를 히트싱크상에 마운트한 상태를 나타낸 단면도, 제 6 도는 본 발명의 제 1 실시예에 의한 반도체레이저의 제조에 사용되는 MBE장치의 일예를 나타낸 약선도.

Claims (3)

  1. 제 1 도전형의 제 1 의 클래드층과, 상기 제 1 의 클래드층상에 적층된 활성층과, 상기 활성층상에 적층된 제 2 도전형의 제 2 클래드층을 가지고, 상기 제 1 의 클래드층, 상기 활성층 및 상기 제 2의 클래드층은 Ⅱ - Ⅵ족 화합물반도체로 이루어지고, 임계치전류 Ith(A), 상기 제 1 의 클래드층, 상기 활성층 및 상기 제 2 의 클래드층에 의해 구성되는 다이오드이 상승전압 Vth, 상기 다이오드의 상승후의 미분저항 Rδ(Ω) 열저항 Rt(K/W), 특성온도 T0(K)의 특성으로 펄스발진하는 반도체레이저에 있어서,
    α≡(Rt/T0) IthVth
    β≡(Rt/T0) RδIth 2,
    로 2개의 양 α,β을 정의하였을때, (α,β)가,αβ 평면상에 있어서의 직선 α=0, 직선 직선 β=0 및 t를 파라미터로 하는 곡선(2 1nt-1)/t, (1-1nt)/t2에 의해 둘러싸인 영역내에 존재하는 것을 특징으로 하는 반도체레이저.
  2. 제 1 항에 있어서, 상기 제 1 의 클래드층과 상기 활성층과의 사이에 제 1 의 광도파층을 가지고, 상기 제 2 의 클래드층과 상기 활성층과의 사이에 제 2 의 광도파층을 가지고, 상기 제 1 의 광도파층 및 상기 제 2 의 광도파층은 Ⅱ - Ⅵ족 화합물 반도체로 이루어지는 것을 특징으로 하는 반도체레이저.
  3. 제 1 항 또는 제 2 항에 있어서, 상기 제 1 의 클래드층 및 상기 제 2 의 클래드층을 구성하는 상기 Ⅱ - Ⅵ족 화합물반도체는 ZnMgSSe계 화합물반도체인 것을 특징으로 하는 반도체레이저.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940018056A 1993-07-28 1994-07-26 반도체레이저 KR100302639B1 (ko)

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Application Number Priority Date Filing Date Title
JP05205919A JP3116675B2 (ja) 1993-07-28 1993-07-28 半導体レーザー
JP93-205,919 1993-07-28

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KR950004668A true KR950004668A (ko) 1995-02-18
KR100302639B1 KR100302639B1 (ko) 2001-11-30

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EP (1) EP0638969A1 (ko)
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EP0638969A1 (en) 1995-02-15
US5764672A (en) 1998-06-09
USRE38339E1 (en) 2003-12-02
JP3116675B2 (ja) 2000-12-11
USRE37177E1 (en) 2001-05-15
JPH0745908A (ja) 1995-02-14
KR100302639B1 (ko) 2001-11-30
US5625634A (en) 1997-04-29

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