KR950004591A - Field effect transistor - Google Patents

Field effect transistor Download PDF

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Publication number
KR950004591A
KR950004591A KR1019930013819A KR930013819A KR950004591A KR 950004591 A KR950004591 A KR 950004591A KR 1019930013819 A KR1019930013819 A KR 1019930013819A KR 930013819 A KR930013819 A KR 930013819A KR 950004591 A KR950004591 A KR 950004591A
Authority
KR
South Korea
Prior art keywords
field effect
effect transistor
channel
graded
composition
Prior art date
Application number
KR1019930013819A
Other languages
Korean (ko)
Other versions
KR960015324B1 (en
Inventor
유태경
Original Assignee
이헌조
주식회사 금성사
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Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019930013819A priority Critical patent/KR960015324B1/en
Publication of KR950004591A publication Critical patent/KR950004591A/en
Application granted granted Critical
Publication of KR960015324B1 publication Critical patent/KR960015324B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

본 발명은 그레이디드(경사진)된 조성물로 이루어진 채널을 갖는 전계효과 트랜지스터에 관한 것으로, 종래 FET 구조에 있어서 계면 산란등에 민감한 채널구조를 개선하여 전자분포를 균일하게 하기 위해 FET의 채널을 그레이디드 조성물로 형성하는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a field effect transistor having a channel composed of a graded (inclined) composition. It is characterized by forming in a composition.

본 발명에 의하면 고출력, 고속동작이 가능한 트랜지스터가 실현된다.According to the present invention, a transistor capable of high output and high speed operation is realized.

Description

전계효과 트랜지스터Field effect transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 종래의 이중구조 FET의 구조도, 제 2 도는 종래의 이중구조 FET의 동작특성을 밴드다이어그램으로 나타낸 도면, 제 3 도는 본 발명의 FET 구조를 밴드다이어그램으로 나타낸 도면, 제 4도는 본 발명의 실시예들을 도시한 도면.1 is a diagram showing the structure of the conventional dual-structure FET, Figure 2 is a band diagram showing the operation characteristics of the conventional dual-structure FET, Figure 3 is a band diagram showing the FET structure of the present invention, Figure 4 is a present invention Diagrams of embodiments of the invention.

Claims (4)

소오스, 드레인, 게이트와 상기 소오스와 드레인간의 전자 이동통로인 채널을 구비하여 구성되는 전계효과트랜지스터에 있어서, 상기 채널의 구성성분이 그레이디드(graede)조성물로 이루어진 것을 특징으로 하는 전계효과 트랜지스터.A field effect transistor comprising a source, a drain, a gate and a channel which is an electron transfer path between the source and the drain, wherein the constituent of the channel is formed of a graded composition. 제 1 항에 있어서, 상기 채널은 그레이디드 InxGa1-xAs(x=0.0∼0.35, or x=0.40∼0.65)으로 형성됨을 특징으로 하는 전계효과 트랜지스터.The field effect transistor of claim 1, wherein the channel is formed of graded In x Ga 1-x As (x = 0.0 to 0.35, or x = 0.40 to 0.65). 제 1 항에 있어서, 상기 그레이디드 채널의 전자분포를 사각형, 삼각형 포물선중의 어느한 형태를 갖도록 조절된 전계효과 트랜지스터.The field effect transistor of claim 1, wherein the electron distribution of the graded channel is adjusted to have any one of a rectangular and a triangular parabola. 제 1 항에 있어서, 상기 채널을 갖는 Ⅲ∼Ⅴ족 반도체와 Si/Ge 물질로 형성되는 것을 특징으로 하는 전계효과 트랜지스터.The field effect transistor according to claim 1, wherein the field effect transistor is formed of a III-V semiconductor having the channel and a Si / Ge material. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930013819A 1993-07-21 1993-07-21 Field effect transistor KR960015324B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930013819A KR960015324B1 (en) 1993-07-21 1993-07-21 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930013819A KR960015324B1 (en) 1993-07-21 1993-07-21 Field effect transistor

Publications (2)

Publication Number Publication Date
KR950004591A true KR950004591A (en) 1995-02-18
KR960015324B1 KR960015324B1 (en) 1996-11-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930013819A KR960015324B1 (en) 1993-07-21 1993-07-21 Field effect transistor

Country Status (1)

Country Link
KR (1) KR960015324B1 (en)

Also Published As

Publication number Publication date
KR960015324B1 (en) 1996-11-07

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