KR910007126A - Method of forming buried resistive contact - Google Patents

Method of forming buried resistive contact Download PDF

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Publication number
KR910007126A
KR910007126A KR1019890012680A KR890012680A KR910007126A KR 910007126 A KR910007126 A KR 910007126A KR 1019890012680 A KR1019890012680 A KR 1019890012680A KR 890012680 A KR890012680 A KR 890012680A KR 910007126 A KR910007126 A KR 910007126A
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KR
South Korea
Prior art keywords
resistive contact
channel layer
gas channel
electron gas
dimensional electron
Prior art date
Application number
KR1019890012680A
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Korean (ko)
Other versions
KR920004365B1 (en
Inventor
맹성재
이재진
김진섭
Original Assignee
경상현
재단법인한국전자통신연구소
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to KR1019890012680A priority Critical patent/KR920004365B1/en
Publication of KR910007126A publication Critical patent/KR910007126A/en
Application granted granted Critical
Publication of KR920004365B1 publication Critical patent/KR920004365B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

내용 없음.No content.

Description

매립형 저항성 접촉의 형성방법Method of forming buried resistive contact

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제 2 도는 본 발명의 형성방법에 의해 완성도 변조 도핑 전계효과 트랜지스트의 개략도.2 is a schematic diagram of a completeness modulation doped field effect transistor by the forming method of the present invention.

제 3 도는 본 발명의 매립형 저항성 접촉을 형성하는 제작과정을 나타낸 것으로 ,3 is a manufacturing process for forming the buried resistive contact of the present invention,

(a) 도는 반절연성 기판위에 도핑하지 않는 갈륨 비소 완충층과 알루미늄 갈륨 비소 격리층 및 실리콘을 도핑항 알루미륨 갈륨 비소층을 차례로 성장하는 상태를 나타낸 개략도.(a) is a schematic diagram showing a state in which an undoped gallium arsenide buffer layer, an aluminum gallium arsenide isolation layer, and a silicon-doped aluminium gallium arsenide layer are sequentially grown on a semi-insulating substrate.

(b) 도는 활성층 영역을 정의하는 상태를 나타낸 개략도.(b) is a schematic diagram showing a state of defining an active layer region.

(c) 도는 소오스와 드레인 영역을 정의하는 상태의 나타낸 개략도.(c) is a schematic representation of a state defining a source and a drain region.

(d) 도는 금속층을 증착하는 상태를 나타낸 개략도.(d) is a schematic diagram showing a state of depositing a metal layer.

(e) 도는 게이트 영역을 정의하면서 완성하는 상태를 나타낸 개략도.(e) Schematic diagram showing a state of completing while defining a gate region.

Claims (2)

서로 다른 밴트갭을 가진 물질을 접합시켜 감금된 캐리어를 이용하여 변조 도핑전계효과 트랜지스터를 제조함에 있어서, 소오스, 드레인 부분을 2차원 전자가스 채널층까지 식각하고 금속을 증착하여 저항성 접촉을 형성시키도록 한 매립형 저항성 접촉의 형성방법.In the fabrication of a modulated doped field effect transistor using a confined carrier by bonding materials having different bandgaps, the source and drain portions may be etched to a two-dimensional electron gas channel layer and metal may be deposited to form a resistive contact. A method of forming a buried resistive contact. 제 1 항에 있어서, 저항성 접촉 부위를 2차원 전자가스 채널층까지 식각하고 금속을 증착하여 저항성 접촉과 2차원 전자가스 채널층이 직접 접하되도록 한 매립형 저항성 접촉의 형성방법.The method of claim 1, wherein the resistive contact portion is etched to the two-dimensional electron gas channel layer and the metal is deposited to directly contact the resistive contact and the two-dimensional electron gas channel layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890012680A 1989-09-01 1989-09-01 Method fo fabricating a omic contact KR920004365B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890012680A KR920004365B1 (en) 1989-09-01 1989-09-01 Method fo fabricating a omic contact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890012680A KR920004365B1 (en) 1989-09-01 1989-09-01 Method fo fabricating a omic contact

Publications (2)

Publication Number Publication Date
KR910007126A true KR910007126A (en) 1991-04-30
KR920004365B1 KR920004365B1 (en) 1992-06-04

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890012680A KR920004365B1 (en) 1989-09-01 1989-09-01 Method fo fabricating a omic contact

Country Status (1)

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KR (1) KR920004365B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1092249C (en) * 1998-04-08 2002-10-09 中国科学院福建物质结构研究所二部 Novel corrosion inhibitor for inhibiting iron and steel corrosion in running water
CN1092248C (en) * 1998-01-22 2002-10-09 中国科学院福建物质结构研究所二部 Corrosion inhibitor for inhibiting corrosion of iron and steel in sea water
CN1092250C (en) * 1998-04-08 2002-10-09 中国科学院福建物质结构研究所二部 Novel corrosion inhibitor for inhibiting iron and steel corrosion in 10%-25% concentration celery salt solution

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1092248C (en) * 1998-01-22 2002-10-09 中国科学院福建物质结构研究所二部 Corrosion inhibitor for inhibiting corrosion of iron and steel in sea water
CN1092249C (en) * 1998-04-08 2002-10-09 中国科学院福建物质结构研究所二部 Novel corrosion inhibitor for inhibiting iron and steel corrosion in running water
CN1092250C (en) * 1998-04-08 2002-10-09 中国科学院福建物质结构研究所二部 Novel corrosion inhibitor for inhibiting iron and steel corrosion in 10%-25% concentration celery salt solution

Also Published As

Publication number Publication date
KR920004365B1 (en) 1992-06-04

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