KR910010737A - Vertical Heterojunction Field Effect Transistors - Google Patents

Vertical Heterojunction Field Effect Transistors Download PDF

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Publication number
KR910010737A
KR910010737A KR1019890016717A KR890016717A KR910010737A KR 910010737 A KR910010737 A KR 910010737A KR 1019890016717 A KR1019890016717 A KR 1019890016717A KR 890016717 A KR890016717 A KR 890016717A KR 910010737 A KR910010737 A KR 910010737A
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KR
South Korea
Prior art keywords
gaas layer
field effect
heterojunction field
metal
effect transistors
Prior art date
Application number
KR1019890016717A
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Korean (ko)
Inventor
신진호
Original Assignee
이헌조
주식회사 금성사
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Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019890016717A priority Critical patent/KR910010737A/en
Publication of KR910010737A publication Critical patent/KR910010737A/en

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Abstract

내용 없음No content

Description

수직형 이형접합 전계효과 트랜지스터Vertical Heterojunction Field Effect Transistors

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도 (가)-(라)는 본 발명 수직형 이형접합 전계효과 트랜지스터의 제조공정을 보인 공정도.2 (a)-(d) are process drawings showing the manufacturing process of the vertical heterojunction field effect transistor of the present invention.

Claims (1)

반절연기판(S.I.GaAs)위에 n+-GaAs층(2), n-GaAs층(3), p-GaAs층(4) 및 n+-GaAs층(5)을 MOCVD 또는 MBE등으로 에피텍셜층을 성장시킨후, 에칭(V-groove)시켜 소오스부(9), 게이트부(11) 및 드레인부(10) 전극을 위한 금속을 접착시킨 수직형 GaAs MESFET에 있어서, 상기 에칭 (V-groove)시킨 표면에 n+-GaAs층(6), i-AlGaAs층(7) 및 i-GaAs층(8)의 에피텍셜층을 MOCVD또는 MBE등으로 재성장시킨후 게이트부(11)전극을 위한 경사면을 남기고 에칭시켜 소오스부(9) 및 드레인부(10)의 오믹전극을 형성하고, 게이트부(11)전극을 위한 금속을 재성장시킨 상기 i-GaAs층 (8)상부에 접착시킨 것을 특징으로 하는 수직형 이형접합 전계효과 트랜지스터.The n + -GaAs layer (2), n-GaAs layer (3), p-GaAs layer (4) and n + -GaAs layer (5) on the semi-insulating substrate (SIGaAs) are epitaxial layered by MOCVD or MBE. In a vertical GaAs MESFET in which a metal for the source portion 9, the gate portion 11, and the drain portion 10 electrode is bonded by etching after being grown, the substrate is etched (V-groove). The epitaxial layers of the n + -GaAs layer (6), the i-AlGaAs layer (7) and the i-GaAs layer (8) are regrown on the surface by MOCVD or MBE, and the inclined surface for the gate part 11 electrode is left. Etching to form ohmic electrodes of the source portion 9 and the drain portion 10, and a vertical type, characterized in that the metal for the gate portion 11 is adhered to the i-GaAs layer 8 on which the metal is regrown. Heterojunction field effect transistor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890016717A 1989-11-17 1989-11-17 Vertical Heterojunction Field Effect Transistors KR910010737A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890016717A KR910010737A (en) 1989-11-17 1989-11-17 Vertical Heterojunction Field Effect Transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890016717A KR910010737A (en) 1989-11-17 1989-11-17 Vertical Heterojunction Field Effect Transistors

Publications (1)

Publication Number Publication Date
KR910010737A true KR910010737A (en) 1991-06-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890016717A KR910010737A (en) 1989-11-17 1989-11-17 Vertical Heterojunction Field Effect Transistors

Country Status (1)

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KR (1) KR910010737A (en)

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