KR950001970A - Method of Checking Contact Window Type of Semiconductor Device - Google Patents

Method of Checking Contact Window Type of Semiconductor Device Download PDF

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Publication number
KR950001970A
KR950001970A KR1019930011391A KR930011391A KR950001970A KR 950001970 A KR950001970 A KR 950001970A KR 1019930011391 A KR1019930011391 A KR 1019930011391A KR 930011391 A KR930011391 A KR 930011391A KR 950001970 A KR950001970 A KR 950001970A
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KR
South Korea
Prior art keywords
contact window
pattern
shape
semiconductor device
auxiliary pattern
Prior art date
Application number
KR1019930011391A
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Korean (ko)
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KR960011264B1 (en
Inventor
황준
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930011391A priority Critical patent/KR960011264B1/en
Publication of KR950001970A publication Critical patent/KR950001970A/en
Application granted granted Critical
Publication of KR960011264B1 publication Critical patent/KR960011264B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 발명은 반도체 소자의 접촉창 형태 확인 방법에 있어서, 스크라이브 라인 상에 소정의 형태를 갖는 보조패턴이 형성된 접촉창 포토마스크를 사용 접촉창 패턴을 1차 노광하는 제1단계, 상기 1차 노광 후 웨이퍼를 노광기에서 언로딩시키지 않고 노광기의 스테이지를 이동하여 상기 스크라이브 라인 상에 형성되어 있는 보조패턴을 상기 1차 노광한 접속창 패턴에 중첨하여 노광시키되 상기 1차 노광한 접속창 패턴의 일부가 상기 보조패턴에 의해 노광되도록 하는 제2단계, 상기 웨이퍼를 현상하여 상기 보조패턴에 의해 일부가 중첩되어 노광된 부위 즉, 잘린 형태의 접속창 패턴을 형성하는 제3단계, 상기 잘린 형태의 접촉창 패턴을 측정장비를 사용하여 관찰하는 제4단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 접촉창 형태 확인 방법에 관한 것으로, 비파괴적으로 접촉창 형태의 정확한 확인이 가능하며, 2차 노광하여 접촉창을 자른 후 바로 측정장비 SEM등을 이용하여 접촉창의 평면도, 측면도, 단면도등을 확인할 수 있어 시간이 절약되는 효과가 있다.According to an aspect of the present invention, there is provided a method of confirming a contact window shape of a semiconductor device, using a contact window photomask in which an auxiliary pattern having a predetermined shape is formed on a scribe line. Instead of unloading the wafer from the exposure machine, the stage of the exposure machine is moved to expose the auxiliary pattern formed on the scribe line by overlapping the first exposed connection window pattern, and a part of the first exposed connection window pattern is A second step of exposing by the auxiliary pattern, a third step of developing the wafer to form a portion exposed by overlapping the auxiliary pattern, that is, a connection window pattern having a cut shape, and a contact window pattern having the cut shape Confirming the contact window shape of the semiconductor device, characterized in that it comprises a fourth step of observing using a measuring device It is related to the law, and it is possible to confirm the shape of the contact window non-destructively and save time by cutting the contact window after the second exposure and immediately using the measuring equipment SEM etc. to check the plan view, side view, and sectional view of the contact window. It is effective.

Description

반도체 소자의 접촉창 형태 확인 방법Method of Checking Contact Window Type of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 포토마스크 구조를 나타낸 평면도, 제2도는 본 발명에 따른 1차 노광후 접촉창이 형성된 웨이퍼 평면도, 제3도는 본 발명에 따른 2차 노광후 접촉창 잘린 상태의 웨이퍼 평면도.1 is a plan view showing a photomask structure according to the present invention, FIG. 2 is a wafer plan view in which a first post-exposure contact window is formed according to the present invention, and FIG. 3 is a wafer plan view of a second post-exposure contact window cut according to the present invention.

Claims (1)

반도체 소자의 접촉창 형태 확인 방법에 있어서, 스크라이브 라인 상에 소정의 형태를 갖는 보조패턴이 형성된 접촉창 포토마스크를 사용 접촉창 패턴을 1차 노광하는 제1단계, 상기 1차 노광 후 웨이퍼를 노광기에서 언로딩 시키지 않고 노광기의 스테이지를 이동하여 상기 스크라이브 라인 상에 형성되어 있는 보조패턴을 상기 1차 노광한 접촉창패턴에 중첩하여 노광시키되 상기 1차 노광한 접촉창 패턴의 일부가 상기 보조패턴에 의해 노광되도록 하는 제2단계, 상기 웨이퍼를 현상하여 보조패턴에 의해 일부가 중첩되어 노광된 부위에 잘린 형태의 접촉창 패턴을 형성하는 제3단계, 상기 잘린 형태의 접촉창 패턴을 측정장비를 사용하여 관찰하는 제4단계를 포함하여 이루어지는 것을 특징으로 하는 반도체소자의 접촉창 형태 확인 방법.A method of confirming a contact window shape of a semiconductor device, comprising: a first step of first exposing a contact window pattern using a contact window photomask having an auxiliary pattern having a predetermined shape on a scribe line; While the stage of the exposure machine is moved without unloading, the auxiliary pattern formed on the scribe line is overlaid on the first exposed contact window pattern, and a part of the first exposed contact window pattern is exposed to the auxiliary pattern. A second step of exposing the wafer, and a third step of forming the contact window pattern in which the wafer is developed by overlapping a part of the auxiliary pattern by being cut by the auxiliary pattern, and the cut-out contact window pattern using the measuring device. Method of confirming the shape of the contact window of the semiconductor device comprising a fourth step of observing by. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930011391A 1993-06-22 1993-06-22 Contact hole type confirmation method of semiconductor device KR960011264B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930011391A KR960011264B1 (en) 1993-06-22 1993-06-22 Contact hole type confirmation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930011391A KR960011264B1 (en) 1993-06-22 1993-06-22 Contact hole type confirmation method of semiconductor device

Publications (2)

Publication Number Publication Date
KR950001970A true KR950001970A (en) 1995-01-04
KR960011264B1 KR960011264B1 (en) 1996-08-21

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KR1019930011391A KR960011264B1 (en) 1993-06-22 1993-06-22 Contact hole type confirmation method of semiconductor device

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100586549B1 (en) * 2004-12-02 2006-06-08 주식회사 하이닉스반도체 Photo mask and method for manufacturing pattern by using it
KR20160056187A (en) 2014-11-11 2016-05-19 최경숙 A lift device of vehicles

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100762234B1 (en) * 2005-12-13 2007-10-04 주식회사 하이닉스반도체 Photo mask and method for exposure using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100586549B1 (en) * 2004-12-02 2006-06-08 주식회사 하이닉스반도체 Photo mask and method for manufacturing pattern by using it
KR20160056187A (en) 2014-11-11 2016-05-19 최경숙 A lift device of vehicles

Also Published As

Publication number Publication date
KR960011264B1 (en) 1996-08-21

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