KR950025905A - How to make photo mask - Google Patents

How to make photo mask Download PDF

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Publication number
KR950025905A
KR950025905A KR1019940002269A KR19940002269A KR950025905A KR 950025905 A KR950025905 A KR 950025905A KR 1019940002269 A KR1019940002269 A KR 1019940002269A KR 19940002269 A KR19940002269 A KR 19940002269A KR 950025905 A KR950025905 A KR 950025905A
Authority
KR
South Korea
Prior art keywords
pattern
vernier
present
overlay
photomask
Prior art date
Application number
KR1019940002269A
Other languages
Korean (ko)
Inventor
황준
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940002269A priority Critical patent/KR950025905A/en
Publication of KR950025905A publication Critical patent/KR950025905A/en

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명은 반도체 소자 제조공정중 패턴 레이어 간의 멀티 레이아웃 체크가 가능토록 하는 포토마스크 제작방법에 관한 것으로, 패턴 상호간의 오버레이를 체크하고자 하는 모 버니어(100)를 형성하고, 상기 모 버니어(100)의 각 패턴 사이의 소정영역에 자 버니어(10,20,30,40)를 형성하는 것을 특징으로 함으로써 본 발명은 여러 개의 포토마스크 레이어 패턴간의 상호 오버레이를 쉽고 간단하게 체크 해낼 수 있었다. 따라서 소자 불량 분석에 많은 도움이 되며, 오정렬에 의한 소자 불량이 감소되는 효과를 얻을 수 있다.The present invention relates to a photomask fabrication method that enables a multi-layout check between pattern layers during a semiconductor device manufacturing process. The present invention provides a method of forming a parent vernier (100) for checking overlay of patterns. By forming the vernier (10, 20, 30, 40) in a predetermined region between each pattern, the present invention was able to easily and simply check the cross-overlay between a plurality of photomask layer patterns. Therefore, it is very helpful for device defect analysis, and it is possible to obtain an effect of reducing device defects due to misalignment.

Description

포토마스크 제작방법How to make photo mask

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 및 제2도는 본 발명의 일실시예에 따른 분리용 포토마스크의 부분 단면도,1 and 2 are partial cross-sectional view of the separation photomask according to an embodiment of the present invention,

제3도는 제1도 및 제2도의 분리마스크가 중첩된 경우의 단면도.3 is a cross-sectional view when the separation masks of FIGS. 1 and 2 overlap.

Claims (1)

반도체 소자 제조공정중 패턴 레이어 간의 멀티 레이아웃 체크가 가능토록 하는 포토마스크 제작방법에 있어서, 패턴 상호간의 오버레이를 체크 하고자 하는 모 버니어(100)를 형성하고, 상기 모 버니어(100)의 각 패턴 사이의 소정영역에 자 버니어(10,20,30,40)를 형성하는 것을 특징으로 하는 포토마스크 제작방법.In a photomask fabrication method that enables a multi-layout check between pattern layers during a semiconductor device manufacturing process, a parent vernier 100 for checking overlay of patterns is formed, and a pattern between each pattern of the parent vernier 100 is formed. Photomask manufacturing method characterized in that to form a vernier (10, 20, 30, 40) in a predetermined region. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940002269A 1994-02-07 1994-02-07 How to make photo mask KR950025905A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940002269A KR950025905A (en) 1994-02-07 1994-02-07 How to make photo mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940002269A KR950025905A (en) 1994-02-07 1994-02-07 How to make photo mask

Publications (1)

Publication Number Publication Date
KR950025905A true KR950025905A (en) 1995-09-18

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ID=66663565

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940002269A KR950025905A (en) 1994-02-07 1994-02-07 How to make photo mask

Country Status (1)

Country Link
KR (1) KR950025905A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100376889B1 (en) * 1995-10-11 2003-06-11 주식회사 하이닉스반도체 Overlay vernier structure and method for forming the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100376889B1 (en) * 1995-10-11 2003-06-11 주식회사 하이닉스반도체 Overlay vernier structure and method for forming the same

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