KR940703077A - 전기화학적 방법 - Google Patents

전기화학적 방법

Info

Publication number
KR940703077A
KR940703077A KR1019940701280A KR19940701280A KR940703077A KR 940703077 A KR940703077 A KR 940703077A KR 1019940701280 A KR1019940701280 A KR 1019940701280A KR 19940701280 A KR19940701280 A KR 19940701280A KR 940703077 A KR940703077 A KR 940703077A
Authority
KR
South Korea
Prior art keywords
semiconductor
thin film
forming
anode
positive electrolyte
Prior art date
Application number
KR1019940701280A
Other languages
English (en)
Other versions
KR100268822B1 (ko
Inventor
제레미 바아커
로드니 존 마샬
메에란 사데그히
Original Assignee
스코트 수잔 마아가렛
비피 솔라 리미티드(Bp Solar Limited)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스코트 수잔 마아가렛, 비피 솔라 리미티드(Bp Solar Limited) filed Critical 스코트 수잔 마아가렛
Publication of KR940703077A publication Critical patent/KR940703077A/ko
Application granted granted Critical
Publication of KR100268822B1 publication Critical patent/KR100268822B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02474—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S205/00—Electrolysis: processes, compositions used therein, and methods of preparing the compositions
    • Y10S205/915—Electrolytic deposition of semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Battery Electrode And Active Subsutance (AREA)

Abstract

반도체의 개선된 전해 디포지션을 이온교환 막에 의해 캐소드와 애노드를 분리시킴으로써 얻었다. 이 방법은 광기전셀의 제조에서 IIB/VIB 반도체의 디포지션에 유용하다.

Description

전기화학적 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (17)

  1. 캐소드와 애노드 사이에 전류를 통과시켜 전해조로부터 재료를 전해 디포지션시키는 방법에 의한 반도체의 박막형성 방법에 있어서, 양전해액 구획과 음전해액 구획으로 분리하기 위한 이온교환막에 의해 반도체가 디포지션되는 전해조로부터 애노드가 분리되는 것을 특징으로 하는 반도체의 박막 형성방법.
  2. 제1항에 있어서, 반도체가 IIN/VIB 화합물인 것을 특징으로 하는 반도체의 박막 형성방법.
  3. 제2항에 있어서, 반도체가 Cd와 Te를 함유하고 있는 화합물인 것을 특징으로 하는 반도체의 박막 형성방법.
  4. 전항 중 어느 한 항에 있어서, 반도체 화합물이 캐소드상에 전해 디포지션되는 것을 특징으로 하는 반도체의 박막 형성방법.
  5. 전항 중 어느 한 항에 있어서, 애노드가 소모성 전극인 것을 특징으로 하는 반도체의 박막 형성방법.
  6. 제5항에 있어서, 애노드가 카드뮴 애노드인 것을 특징으로 하는 반도체의 박막 형성 방법.
  7. 제1항 내지 제4항 중 어느 한 항에 있어서, 애노드가 비소모성 애노드인 것을 특징으로 하는 반도체의 박막 형성 방법.
  8. 제7항에 있어서, 애노드가 백금 또는 백금티타늄인 것을 특징으로 하는 반도체의 박막 형성 방법.
  9. 전항 중 어느 한 항에 있어서, 캐소드가 투명한 도전층, 그 다음에는 CdS층으로 피복된 유리판인 것을 특징으로 하는 반도체의 박막 형성 방법.
  10. 전항 중 어느 한 항에 있어서, 이온교환막이 양이온 교환막인 것을 특징으로 하는 반도체의 박막 형성 방법.
  11. 전항 중 어느 한 항에 있어서, 이온교환막이 퍼플루오르술폰산기를 함유하는 폴리머인 것을 특징으로 하는 반도체의 박막 형성 방법.
  12. 제11항에 있어서, 폴리머가 술폰네이트기를 함유한 비닐 에테르공모노머와 테트라플루오르에틸렌과 공중합된 산물인 것을 특징으로 하는 반도체의 박막 형성 방법.
  13. 전항 중 어느 한 항에 있어서, 양 전해액 구획내에 있는 양전해액과 음전해액에 구획내에 있는 음전해액이 다른 화합물로 되어 있는 것을 특징으로 하는 반도체의 박막 형성 방법.
  14. 제13항에 있어서, 애노드가 비소모성 전극이며 양전해액이 묽은 황산수용액인 것을 특징으로 하는 반도체의 박막 형성 방법.
  15. 제13항에 있어서, 애노드는 Cd 애노드이며 양전해액은 묽은 HCl 수용액인 것을 특징으로 하는 반도체의 박막 형성 방법.
  16. 전항 중 어느 한 항에 있어서, 양전해액 구획내에 있는 양전해액이 전착과정 동안에 연속적으로 제거되고 새로운 양전해액으로 공급되는 것을 특징으로 하는 반도체의 박막 형성 방법.
  17. 캐소드와 애노드 사이에 전류를 통과시켜 IIB/VIB원소들을 함유한 이온들을 가진 전해조로부터 전착되는 IIB/VIB반도체층, 즉 CdS층을 포함하는 광기전셀에 있어서, IIB/VIB 반도체가 전해조로부터 디포지션되고 애노드는 전해조와 분리되며 반도체가 이온교환 폴리머 막에 의해 디포지션되는 것을 특징으로 하는 광기전셀.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940701280A 1991-10-18 1992-10-15 반도체의 박막 형성방법 KR100268822B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB919122169A GB9122169D0 (en) 1991-10-18 1991-10-18 Electrochemical process
GB9122169.7 1991-10-18
PCT/GB1992/001888 WO1993008594A1 (en) 1991-10-18 1992-10-15 Electrochemical process

Publications (2)

Publication Number Publication Date
KR940703077A true KR940703077A (ko) 1994-09-17
KR100268822B1 KR100268822B1 (ko) 2000-10-16

Family

ID=10703174

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940701280A KR100268822B1 (ko) 1991-10-18 1992-10-15 반도체의 박막 형성방법

Country Status (12)

Country Link
US (1) US5478445A (ko)
EP (1) EP0538041A1 (ko)
JP (1) JP3130940B2 (ko)
KR (1) KR100268822B1 (ko)
CN (1) CN1092718C (ko)
AU (1) AU672761B2 (ko)
GB (1) GB9122169D0 (ko)
IN (1) IN186800B (ko)
MY (1) MY109064A (ko)
TW (1) TW232716B (ko)
WO (1) WO1993008594A1 (ko)
ZA (1) ZA928025B (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968364A (en) * 1993-03-16 1999-10-19 Henkel Corporation Process for the removal of toxic cyanide and heavy metal species from alkaline solutions
US8852417B2 (en) 1999-04-13 2014-10-07 Applied Materials, Inc. Electrolytic process using anion permeable barrier
US8236159B2 (en) * 1999-04-13 2012-08-07 Applied Materials Inc. Electrolytic process using cation permeable barrier
US6638239B1 (en) 2000-04-14 2003-10-28 Glaukos Corporation Apparatus and method for treating glaucoma
AU2002259152A1 (en) 2001-05-08 2002-11-18 Bp Corporation North America Inc. Improved photovoltaic device
US20050146875A1 (en) * 2004-01-07 2005-07-07 Tideland Signal Corporation Side-emitting led marine signaling device
JP2008522040A (ja) * 2004-11-30 2008-06-26 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 導電性表面の膜制限選択性電気めっき
US20120175262A1 (en) * 2011-01-10 2012-07-12 EncoreSolar, Inc. Method and apparatus for electrodeposition of group iib-via compound layers
US9005409B2 (en) 2011-04-14 2015-04-14 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9017528B2 (en) 2011-04-14 2015-04-28 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9303329B2 (en) 2013-11-11 2016-04-05 Tel Nexx, Inc. Electrochemical deposition apparatus with remote catholyte fluid management
TWI593841B (zh) * 2015-03-27 2017-08-01 黃思倫 電化學法萃取植物纖維之萃取方法
CN106868563B (zh) * 2015-12-11 2019-01-25 中国海洋大学 一种硒化物薄膜修饰泡沫镍电极的制备方法及其应用

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400244A (en) * 1976-06-08 1983-08-23 Monosolar, Inc. Photo-voltaic power generating means and methods
US4192721A (en) * 1979-04-24 1980-03-11 Baranski Andrzej S Method for producing a smooth coherent film of a metal chalconide
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
US4465565A (en) * 1983-03-28 1984-08-14 Ford Aerospace & Communications Corporation CdTe passivation of HgCdTe by electrochemical deposition
JPS60140406A (ja) * 1983-12-28 1985-07-25 Mitsubishi Heavy Ind Ltd 船舶誘導装置
US4536260A (en) * 1984-05-14 1985-08-20 University Of Guelph Thin film cadmium selenide electrodeposited from selenosulphite solution
IN167516B (ko) * 1986-05-06 1990-11-10 Standard Oil Co Ohio
JP2509635B2 (ja) * 1987-09-21 1996-06-26 財団法人相模中央化学研究所 金属カルコゲナイド粒子分散膜の製造方法
GB9022828D0 (en) * 1990-10-19 1990-12-05 Bp Solar Ltd Electrochemical process

Also Published As

Publication number Publication date
IN186800B (ko) 2001-11-10
EP0538041A1 (en) 1993-04-21
ZA928025B (en) 1994-04-18
WO1993008594A1 (en) 1993-04-29
KR100268822B1 (ko) 2000-10-16
MY109064A (en) 1996-11-30
CN1071977A (zh) 1993-05-12
GB9122169D0 (en) 1991-11-27
JPH07502303A (ja) 1995-03-09
CN1092718C (zh) 2002-10-16
TW232716B (ko) 1994-10-21
AU2756092A (en) 1993-05-21
JP3130940B2 (ja) 2001-01-31
US5478445A (en) 1995-12-26
AU672761B2 (en) 1996-10-17

Similar Documents

Publication Publication Date Title
KR940703077A (ko) 전기화학적 방법
US4124477A (en) Electrolytic cell utilizing pretreated semi-permeable membranes
IE41068L (en) Electrochemical cell
KR840003702A (ko) 납 또는 납합금으로 피복된 전극 및 그의 제법
KR880001067A (ko) 전지용 전극 조립체와 그 프레임 및 전해전지
FI73247C (fi) Foerfarande foer elektrolytisk framstaellning av vaete.
KR890008349A (ko) 전극 촉매 및 그 제조방법
US10047449B2 (en) Device and method for electrolytically coating an object
CN110205656A (zh) 一种电解铜箔表面的微细粗化处理工艺
US3222265A (en) Electrolysis method and apparatus employing a novel diaphragm
WO2013013119A1 (en) Apparatus for electrochemical deposition of a metal
CN1054803A (zh) 单极离子交换隔膜电解质电池组合装置
EP0145259A1 (en) Process for the electrolysis of aqueous alkali metal chloride solution
US4054496A (en) Process for the production of high purity deuterium
EP0032463A1 (en) Electrodeposition of cadmium with selenium
CN102634823A (zh) 一种微米多孔铁箔的制备方法
US4412894A (en) Process for electrowinning of massive zinc with hydrogen anodes
Pleskov et al. Photosplitting of water in a photoelectrolyser with solid polymer electrolyte
CN109056011A (zh) 一种应用于高容量锂离子电池负极微孔铜箔的制备方法
Gore et al. A novel electroplating technique for cadmium telluride films in non-aqueous medium
JPS55125125A (en) Production of flexible copper-laminated substrate
Tanaka et al. Mechanistic studies of the hydrogen evolution reaction on tungsten under water electrolysis conditions
KR830007880A (ko) 투과성 이온막 전해기
JPS62161984A (ja) 電解鉄の製法
KR840001232A (ko) 전기 도금 방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20030618

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee