KR940020626A - Manufacturing method of laser diode - Google Patents
Manufacturing method of laser diode Download PDFInfo
- Publication number
- KR940020626A KR940020626A KR1019930001587A KR930001587A KR940020626A KR 940020626 A KR940020626 A KR 940020626A KR 1019930001587 A KR1019930001587 A KR 1019930001587A KR 930001587 A KR930001587 A KR 930001587A KR 940020626 A KR940020626 A KR 940020626A
- Authority
- KR
- South Korea
- Prior art keywords
- laser diode
- electrode
- manufacturing
- metal
- thickness
- Prior art date
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- Semiconductor Lasers (AREA)
Abstract
본 발명은 레이저 다이오드의 제작방법에 관한 것으로, 특히 전극증착공정시 인터메탈릭 상태의 메탈형성을 억제시켜 단위출력당 온도(℃/W)로 표현되는 열저항 문제를 해결하고자한 것으로서, 이러한 본 발명의 목적은 칩(10)의 전극증착공정시 전극금속외에 Mo. Pt인 보호메탈(5)(6)을 200-300Å정도의 두께로 증착시켜 전극층을 형성시킴으로써 달성되다.The present invention relates to a method of manufacturing a laser diode, and in particular, to solve the thermal resistance problem expressed in temperature per unit output (° C./W) by suppressing metal formation in an intermetallic state during an electrode deposition process. The purpose of the Mo. In addition to the electrode metal in the electrode deposition process of the chip (10). It is achieved by depositing a protective metal (5) (6), which is Pt, to a thickness of about 200-300 mm 3 to form an electrode layer.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도의 (가)(나)는 본 발명 레이저 다이오드의 제작공정도로서, (가)는 P-형 레이저 다이오드의 제작공정도이고, (나)는 n-형 레이저 다이오드의 제작공정도이다.2A is a manufacturing process diagram of the laser diode of the present invention, (A) is a manufacturing process diagram of a P-type laser diode, and (b) is a manufacturing process diagram of an n-type laser diode.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930001587A KR940020626A (en) | 1993-02-05 | 1993-02-05 | Manufacturing method of laser diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930001587A KR940020626A (en) | 1993-02-05 | 1993-02-05 | Manufacturing method of laser diode |
Publications (1)
Publication Number | Publication Date |
---|---|
KR940020626A true KR940020626A (en) | 1994-09-16 |
Family
ID=66866109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930001587A KR940020626A (en) | 1993-02-05 | 1993-02-05 | Manufacturing method of laser diode |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR940020626A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100421134B1 (en) * | 2001-12-28 | 2004-03-04 | 삼성전자주식회사 | Flip chip bonding method for laser diode |
-
1993
- 1993-02-05 KR KR1019930001587A patent/KR940020626A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100421134B1 (en) * | 2001-12-28 | 2004-03-04 | 삼성전자주식회사 | Flip chip bonding method for laser diode |
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Legal Events
Date | Code | Title | Description |
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WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |