KR940020626A - Manufacturing method of laser diode - Google Patents

Manufacturing method of laser diode Download PDF

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Publication number
KR940020626A
KR940020626A KR1019930001587A KR930001587A KR940020626A KR 940020626 A KR940020626 A KR 940020626A KR 1019930001587 A KR1019930001587 A KR 1019930001587A KR 930001587 A KR930001587 A KR 930001587A KR 940020626 A KR940020626 A KR 940020626A
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KR
South Korea
Prior art keywords
laser diode
electrode
manufacturing
metal
thickness
Prior art date
Application number
KR1019930001587A
Other languages
Korean (ko)
Inventor
조명찬
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019930001587A priority Critical patent/KR940020626A/en
Publication of KR940020626A publication Critical patent/KR940020626A/en

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Abstract

본 발명은 레이저 다이오드의 제작방법에 관한 것으로, 특히 전극증착공정시 인터메탈릭 상태의 메탈형성을 억제시켜 단위출력당 온도(℃/W)로 표현되는 열저항 문제를 해결하고자한 것으로서, 이러한 본 발명의 목적은 칩(10)의 전극증착공정시 전극금속외에 Mo. Pt인 보호메탈(5)(6)을 200-300Å정도의 두께로 증착시켜 전극층을 형성시킴으로써 달성되다.The present invention relates to a method of manufacturing a laser diode, and in particular, to solve the thermal resistance problem expressed in temperature per unit output (° C./W) by suppressing metal formation in an intermetallic state during an electrode deposition process. The purpose of the Mo. In addition to the electrode metal in the electrode deposition process of the chip (10). It is achieved by depositing a protective metal (5) (6), which is Pt, to a thickness of about 200-300 mm 3 to form an electrode layer.

Description

레이저 다이오드의 제작방법Manufacturing method of laser diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도의 (가)(나)는 본 발명 레이저 다이오드의 제작공정도로서, (가)는 P-형 레이저 다이오드의 제작공정도이고, (나)는 n-형 레이저 다이오드의 제작공정도이다.2A is a manufacturing process diagram of the laser diode of the present invention, (A) is a manufacturing process diagram of a P-type laser diode, and (b) is a manufacturing process diagram of an n-type laser diode.

Claims (3)

섭마운트(2)와 칩(10)을 솔더(4)로 접착시켜 제작하는 레이저 다이오드에 있어서, 상기 칩(10)의 전극증착공정시 전극금속외에 보호메탈(6)(5)을 소정두께로 적층시켜 전극증착함을 특징으로한 레이저 다이오드의 제작방법.In the laser diode fabricated by bonding the submount (2) and the chip (10) with a solder (4), the protective metal (6) (5) in addition to the electrode metal during the electrode deposition process of the chip 10 to a predetermined thickness A method of fabricating a laser diode characterized in that the electrode is deposited by laminating. 제1항에 있어서, 보호메탈(6)(5)는 Mo/Au, Pt/Au를 사용함을 특징으로한 레이저 다이오드의 제작방법.The method of manufacturing a laser diode according to claim 1, wherein the protective metal (6) (5) uses Mo / Au and Pt / Au. 제1항에 있어서, 보호메탈(6)(5)의 두께는 상기 솔더(4)두께의 2/10-3/10인 200-300Å정도의 두께로 함을 특징으로한 레이저 다이오드의 제작방법.The method of manufacturing a laser diode according to claim 1, wherein the thickness of the protective metal (6) (5) is about 200-300 kPa which is 2 / 10-3 / 10 of the thickness of the solder (4). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930001587A 1993-02-05 1993-02-05 Manufacturing method of laser diode KR940020626A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930001587A KR940020626A (en) 1993-02-05 1993-02-05 Manufacturing method of laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930001587A KR940020626A (en) 1993-02-05 1993-02-05 Manufacturing method of laser diode

Publications (1)

Publication Number Publication Date
KR940020626A true KR940020626A (en) 1994-09-16

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930001587A KR940020626A (en) 1993-02-05 1993-02-05 Manufacturing method of laser diode

Country Status (1)

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KR (1) KR940020626A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100421134B1 (en) * 2001-12-28 2004-03-04 삼성전자주식회사 Flip chip bonding method for laser diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100421134B1 (en) * 2001-12-28 2004-03-04 삼성전자주식회사 Flip chip bonding method for laser diode

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