JPS6319892A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS6319892A JPS6319892A JP16363186A JP16363186A JPS6319892A JP S6319892 A JPS6319892 A JP S6319892A JP 16363186 A JP16363186 A JP 16363186A JP 16363186 A JP16363186 A JP 16363186A JP S6319892 A JPS6319892 A JP S6319892A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- evaporated
- electrode
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- 229910018885 Pt—Au Inorganic materials 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 9
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 5
- 239000000470 constituent Substances 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005253 cladding Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体レーザの電極構造に係シ、特に、パッ
ケージへの実装に好適な電極構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electrode structure of a semiconductor laser, and particularly to an electrode structure suitable for mounting in a package.
半導体レーザは、チップを放熱体に低歪で接合する必要
があり１通常は一方の電極を放熱体にソルダ付けし、他
方の成極にワイヤボンディング全行ってパッケージＶＣ
実装している。For semiconductor lasers, it is necessary to bond the chip to a heat sink with low distortion.1 Normally, one electrode is soldered to the heat sink, and the other electrode is wire bonded to form a package VC.
Implemented.
このため、従来の電極においては１例えば、特開昭５５
−３９６９６号公報に記載されているように、ソルダに
接する電極に対しては、ソルダ濡れが良く、かつ、ソル
ダに対するバリヤ性を有する電極構造が採られ、他方、
ワイヤボンディングを行う電極に対しては、ワイヤボン
ダビリディ（ワイヤボンドの容易さ）を主体とした設計
がなされていた。For this reason, in conventional electrodes, for example,
As described in Japanese Patent No. 39696, an electrode structure that has good solder wettability and a barrier property against solder is adopted for the electrode in contact with the solder, and on the other hand,
Electrodes for wire bonding have been designed with wire bondability as the main feature (ease of wire bonding).
一万、素子の給電極性（例えば、パンケージのキャンの
給電時の■、ｅの極性）を簡便に変更するＫは、チップ
の取付面の方向を逆転すｎば良いことが知られていた。It has been known that in order to easily change the feeding polarity of the element (for example, the polarity of ■ and e when feeding the can of the pan cage), it is sufficient to simply reverse the direction of the mounting surface of the chip.
上記、従来技術に２いては、チップを逆転して実装でき
るまでの考慮になさｎでいなかった。In the above-mentioned prior art 2, no consideration was given to the fact that the chip could be mounted in reverse.
本発明の目的に、Ｐ電極・Ｎｔ極いずへの側でも放熱体
に接合してパンケージに実装することができる、すなわ
ち、チップを逆転しても実装できる半導体レーザの電極
を提供することにある。It is an object of the present invention to provide a semiconductor laser electrode that can be mounted on a pancage by bonding to a heat radiator on either side of the P electrode or Nt electrode, that is, can be mounted even when the chip is reversed. be.
上記の目的に、基板半導体の構成金属の外方への拡散を
阻止し、かつ、ソルダの内部への拡散を防止するバリヤ
層を、Ｐ−Ｎ両電極に設けることに：）達成することが
できる。To achieve the above purpose, a barrier layer is provided on both the P and N electrodes to prevent the constituent metals of the substrate semiconductor from diffusing outward and into the solder. can.
次に、本発明の基本構成を第１図を用いて説明する。今
、ＧａＡＳＺＧａＡｔＡＳ系の半導体レーザを例てとる
と、まず、Ｐ型層１上にオーム性接触を得るための電極
層２を形成し、ついで、拡散バリヤノー３を設ける。さ
らにその上に、リードワイヤ１１ｔポンデイングするた
めの金属層４を形成する。Next, the basic configuration of the present invention will be explained using FIG. Now, taking a GaASZGaAtAS semiconductor laser as an example, first, an electrode layer 2 for obtaining ohmic contact is formed on a P-type layer 1, and then a diffusion barrier layer 3 is provided. Furthermore, a metal layer 4 for bonding lead wires 11t is formed thereon.
Ｎ型層５に対しても・きく同様であり、オーミック電極
層６．拡散バリヤ層７．ワイヤボンディング用金属層８
′ｔ−形成する。The same applies to the N-type layer 5, and the ohmic electrode layer 6. Diffusion barrier layer7. Metal layer 8 for wire bonding
't-form.
拡散バリヤ層３，７（グ、基体半導体を構成する金属（
ＧａやＡＳＺど）がワイヤボンディング用金属層４，８
ｖＩ−まで外方拡散し、ワイヤボンダビリティが損われ
るの？防止するとともに、ソルダ９全用いてチップと放
熱体１０にグイボンディングした場合に、チップの実装
中や動作中にソルダが半導体基体中に拡散・侵入するこ
とＫよシ素子が劣化するのを防止している。Diffusion barrier layers 3 and 7 (G, metal constituting the base semiconductor)
Ga, ASZ, etc.) are the metal layers 4, 8 for wire bonding.
Will it diffuse outward to vI- and impair wire bondability? In addition, when the solder 9 is fully used to bond the chip and the heat sink 10, it prevents the solder from diffusing and penetrating into the semiconductor substrate during chip mounting or operation, and prevents the element from deteriorating. are doing.
上記のバルヤ層に、ソルダに対して適度の濡れ性がある
ことが必要であり１例えば、 Ｐｔ、 Ｐｄなどが好
適な材料である。通常、バリヤ層はＰ側・Ｎ側とも同一
材質で形成することができる。しかし、オーミック゛成
極層の材質の相異によシ、各６異なる材質を用いてバリ
ヤ層を形成する必要がらる場合もある。It is necessary for the above-mentioned barrier layer to have appropriate wettability with respect to solder, and suitable materials include, for example, Pt and Pd. Usually, the barrier layer can be formed of the same material on both the P side and the N side. However, due to differences in the materials of the ohmic polarization layer, it may be necessary to form the barrier layer using six different materials.
ワイヤボ／ディ／グ用金属層４． ８ｖ′ｉ、通常。Metal layer for wirebodies/digs4. 8v'i, normal.
数１００人の薄いＡｕで形成する４ しがし、リードワ
イヤの材質とバリヤ層の材質との組合せによっては、ワ
イヤボンディング用金属層４，８を省略できる場合もあ
る。Depending on the combination of the material of the lead wire and the material of the barrier layer, the wire bonding metal layers 4 and 8 may be omitted.
以下１本発明の実施列を第２図によシ説明する。 An embodiment of the present invention will be explained below with reference to FIG.
ＧａＡＳ／ＧａＡｊＡｓ系牛導体レーザの基体結晶に。For the base crystal of GaAS/GaAjAs conductor lasers.
ｎ４ＧａＡＳ基板２６上に液相エピタキシャル法ヲ用い
て形成したｎ型ＧａＡｔＡｓ クラッド層２５゜活性
層２４．Ｐ型層 ａ Ａ ｔＡ ｓ クラッド４２２．
ｎ型層 ａ Ａ Ｓキャンプ７ｄ ２１とで構成されて
いる。An n-type GaAtAs cladding layer 25° active layer 24 formed on an n4GaAS substrate 26 using a liquid phase epitaxial method. P-type layer aA tA s cladding 422.
It is composed of an n-type layer a, an A S camp 7d, and 21.
まず予め、ｎ型ＱａＡｓキャップ層２１を突抜け。First, the n-type QaAs cap layer 21 is penetrated in advance.
Ｐ型ＧａＡ７ＡＳ クラッド層１２に達する選択Ｐ型拡
散／＊ ２３を形成する。A selective P-type diffusion /*23 is formed to reach the P-type GaA7AS cladding layer 12.
次に、上記の拡故層２３がある半導体表面にＰ型電極層
を設ける。まず、Ｍｏを約１０００人の厚さに真空蒸着
してＰ型オーミック電極層２７′（ｉ−形成する。つい
で、ｐｔ（約３００ＯＡ ）を連続蒸着して拡散バリヤ
層２８を形成し、最後にＡｕ（約５００人）を連続蒸着
してボンディング用金属層を設ける。Next, a P-type electrode layer is provided on the semiconductor surface where the above-mentioned spreading layer 23 is located. First, Mo is vacuum-deposited to a thickness of approximately 1000 nm to form a P-type ohmic electrode layer 27' (i-). Next, PT (approximately 300 OA) is continuously deposited to form a diffusion barrier layer 28, and finally A metal layer for bonding is provided by continuous vapor deposition of Au (approximately 500 layers).
同様に、ｎ盤ＧａＡｓ基板２６側にはｔ ＡｕＧｅ−ｐ
ｔ −Ａ Ｌｌからなる３ノ一構造オーミツク電極層
３０（総合膜厚約２００ＯＡ ）を真空蒸着する。つい
で、拡散バリヤ層２８となるｐｔｔ約３０００人連続蒸
着し、最後に、Ａｕを約５００Ａ連続蒸着してボンディ
ング用金属層を形成した。Similarly, on the n-board GaAs substrate 26 side, tAuGe-p
A three-layer ohmic electrode layer 30 (total film thickness of about 200 OA) consisting of t-A Ll is vacuum deposited. Next, approximately 3000 PTT layers were continuously deposited to form the diffusion barrier layer 28, and finally, Au was continuously deposited at approximately 500 A to form a bonding metal layer.
上記の電極構造は、Ｐｂ／Ｓｎソルダ？用いた実装に好
適である。１だ、ソルダとしてＩｎを用いた場合には＋
Ｍ ｏ ２７層にもソルダバリヤ性があるので、Ｐ型
電極層のＰｔバリヤ層２８を省略することができる。Is the above electrode structure Pb/Sn solder? suitable for implementations used. 1, if In is used as the solder, +
Since the Mo 27 layer also has solder barrier properties, the Pt barrier layer 28 of the P-type electrode layer can be omitted.
同様に、工ｎソルダを用いる場合には、ｎ型成極ノーの
Ｐｔバリヤ層２８の代シにＭｏを用いてバリヤ層を構成
してもよい。Similarly, when using a non-n-type solder, the barrier layer may be constructed using Mo instead of the Pt barrier layer 28 without n-type polarization.
本発明によｎば、基板半導体の構成金属を拡散を防止し
、かつソルダの拡散を防止するバリヤ層をＰ−Ｎ両電砥
に設けることによシ半導体レーザチップの故熱体への接
合方向をいずれの向きとしてもパンケージへの実装が可
能になる。このため。According to the present invention, a semiconductor laser chip can be bonded to a waste heat body by providing a barrier layer on a P-N electric grinder to prevent diffusion of constituent metals of a substrate semiconductor and to prevent diffusion of solder. It can be mounted on a pan cage in any direction. For this reason.
パッケージの給電億性が反対となる型式の製品を製作す
る場会でも、チップの電極構造を１町ら変更する必要が
ないので、生産工程が簡素化さｎ、生産性が同上する。Even when manufacturing a product whose package has an opposite power supply capability, there is no need to change the electrode structure of the chip, simplifying the production process and increasing productivity.
以上の説明でに、ＧａＡｓ／ＧａＡＡＡｓ系半導体レー
ザを例としたが、化合物半導体、荷に■−ｖ族化甘物せ
導体？用いた種々のデバイスに本発明が広く適用できる
ことは言うまでもない。In the above explanation, a GaAs/GaAAAs semiconductor laser was used as an example, but what about compound semiconductors and ■-V group conductors? It goes without saying that the present invention is widely applicable to the various devices used.
また、バリヤ層を溝底する材質としては、Ｐｔ。Further, the material for forming the groove bottom of the barrier layer is Pt.
ｐｄの他に、用いるソルダの材質によっては。In addition to PD, it depends on the material of the solder used.
ｉｖｆ ｏやＷ、’ｒａ、Ｈｆなども使用可能であり、
さらに、こｎらの複合膜や、高融点金属のシリサイドも
使用可能である。You can also use ivfo, W, 'ra, Hf, etc.
Furthermore, these composite films and silicides of high melting point metals can also be used.
第１図は１本発明の基本概念を示す電極構造の縦断面図
、第２図は本発明の実施例の電極構造を示す縦断面図で
ある。FIG. 1 is a vertical cross-sectional view of an electrode structure showing the basic concept of the present invention, and FIG. 2 is a vertical cross-sectional view showing an electrode structure of an embodiment of the present invention.
Claims (1)
バリヤ層、さらに最上層にボンディング用金属層を形成
してＰ・Ｎ両電極を構成したことを特徴とする半導体レ
ーザ。 ２、前記拡散バリヤ層の材質が、Ｐｔ、Ｐｄ、Ｍｏ、Ｗ
、Ｔａ、Ｈｆ、またはこれら複合膜、あるいは高融点金
属のシリサイドのいずれか一つ、または上記の組合せで
構成されたことを特徴とする特許請求の範囲第１項記載
の半導体レーザ。 ３、前記Ｐ型電極のオーミック電極層をＭｏで、また、
前記Ｎ型電極のオーミック電極層を ＡｕＧｅ−Ｐｔ−Ａｕで形成し、かつ、両電極の前記バ
リヤ層をＰｔまたはＰｄで形成し、前記最上層のボンデ
ィング用金属をＡｕで形成したことを特徴とする特許請
求の範囲第１項記載の半導体レーザ。[Claims] 1. A diffusion barrier layer is formed on the electrode layer provided to obtain ohmic contact, and a bonding metal layer is further formed on the top layer to form both P and N electrodes. semiconductor laser. 2. The material of the diffusion barrier layer is Pt, Pd, Mo, W.
2. The semiconductor laser according to claim 1, wherein the semiconductor laser is made of any one of , Ta, Hf, a composite film thereof, or a silicide of a high melting point metal, or a combination of the above. 3. The ohmic electrode layer of the P-type electrode is made of Mo, and
The ohmic electrode layer of the N-type electrode is formed of AuGe-Pt-Au, the barrier layer of both electrodes is formed of Pt or Pd, and the bonding metal of the uppermost layer is formed of Au. A semiconductor laser according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16363186A JP2633833B2 (en) | 1986-07-14 | 1986-07-14 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16363186A JP2633833B2 (en) | 1986-07-14 | 1986-07-14 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6319892A true JPS6319892A (en) | 1988-01-27 |
| JP2633833B2 JP2633833B2 (en) | 1997-07-23 |
Family
ID=15777602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16363186A Expired - Lifetime JP2633833B2 (en) | 1986-07-14 | 1986-07-14 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2633833B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0472688A (en) * | 1990-05-18 | 1992-03-06 | Toshiba Corp | Semiconductor light emitting device |
| US5790577A (en) * | 1995-10-05 | 1998-08-04 | Nippondenso Co., Ltd. | High output semiconductor laser element having robust electrode structure |
-
1986
- 1986-07-14 JP JP16363186A patent/JP2633833B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0472688A (en) * | 1990-05-18 | 1992-03-06 | Toshiba Corp | Semiconductor light emitting device |
| US5790577A (en) * | 1995-10-05 | 1998-08-04 | Nippondenso Co., Ltd. | High output semiconductor laser element having robust electrode structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2633833B2 (en) | 1997-07-23 |
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