KR940020493A - 이시알 장비 - Google Patents

이시알 장비 Download PDF

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Publication number
KR940020493A
KR940020493A KR1019930001637A KR930001637A KR940020493A KR 940020493 A KR940020493 A KR 940020493A KR 1019930001637 A KR1019930001637 A KR 1019930001637A KR 930001637 A KR930001637 A KR 930001637A KR 940020493 A KR940020493 A KR 940020493A
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wafer
gas
cryogenic
etching
ecr
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KR1019930001637A
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KR960006958B1 (ko
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이상윤
성노영
이청대
김대희
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김주용
현대전자산업 주식회사
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Priority to KR1019930001637A priority Critical patent/KR960006958B1/ko
Priority to US08/192,403 priority patent/US5558736A/en
Priority to DE4403553A priority patent/DE4403553C2/de
Priority to JP1384694A priority patent/JP3058549B2/ja
Publication of KR940020493A publication Critical patent/KR940020493A/ko
Application granted granted Critical
Publication of KR960006958B1 publication Critical patent/KR960006958B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

본 발명은 차세대 초미세 고집적 패턴의 식각 공정시 래디칼의 방사성 운동 성향에 의하여 포토레지스트(P/R) 측면에서 침식을 방지할 수 있고, 일반적 식각장비의 비등방성과 식각속도, 식각속도와 균일성 사이에 존재하는 상반적 증감현상을 완전 배제하여 원하는 수직식각 뿐만 아니라 식각속도를 얻을 수 있어 종래의 삼층 P/R(TLR)이나 다층P/R(MLR)을 사용하는 공정의 복잡화와 수율 및 생산성을 저하시키는 요인을 제거하는 효과가 있는 ECR(Electron cyclotron Resonance) 식각장비의 극저온 전극에 관한 것이다.

Description

이시알 장비
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 극저온 식각 전극 구조도.
제2도는 제1도의 부분 상세도,
제3도는 제1도의 평면도,
제4도는 제1도의 A-A′선을 따른 단면도,
제5도는 제1도의 B-B′선을 따른 단면도,
제6도는 본 발명에 따른 식각 작용 상태도.

Claims (10)

  1. 이시알(ECR) 식각 장비의 극저온 식각용 전극에 있어서, 웨이퍼를 받혀주어 공정이 진행되도록 하되 상기 웨이퍼 밑에 열전달용 가스가 주입되어 웨이퍼의 온도를 저하시키는 수단과 내부에 냉각수가 흐를 수 있는 냉매 흐름관(37)을 가지며 RF단자와 연결된 웨이퍼 받침대(1), 상기 웨이퍼 받침대(1)의 내부를 관통하여 그 내부에서 수직 왕복 운동을 하므로써 상기 웨이퍼 받침대(1) 위에 위치한 웨이퍼를 수직으로 들어주거나 안착 시켜주는 리프팅 핀(6), 상기 리프팅 핀(6)에 수직 운동력을 전달해 주는 네발 리프터(30), 에어 실린더(28)에서 발생하는 동력을 받아 상기 네발 리프터(16)에 수직 운동력을 전달해 주는 상,하 이송축(20), 상기 네발 리프터(30)와 일체로 연결되어 상하 이동하면서 웨이퍼를 공정중에 움직이지 않고 정확한 위치를 계속 유지하도록 웨이퍼의 가장자리를 눌러주는 글램프(4), 상기 벨로우즈(16)가 설치되는 부위를 가로질러 형성되어 하부를 진공 상태로 유지하도록 함과 동시에 상,하 이송축(20)을 직선운동 하도록 하는 직선운동 유니트(19)와 일체가 되도록 형성된 공정 챔버 플레이트(31), RF가 걸리는 웨이퍼 받침대(1)의 측면과 하부면을 절연하는 절연체(3,5,7,9), 상기 웨이퍼 받침대(1) 하단에 밀착하여 형성된 RF 차단 절연체(7)를 관통하여 웨이퍼 기판 밑에 냉각용 헬륨가스 주입되는 헬륨튜브(24), 상기 웨이퍼 받침대(1) 내부를 순환하여 저온화 시키는 냉각수를 안내하는 냉매용 튜브(18), 웨이퍼에서 반응을 일으킨 가스를 펌핑(pumping) 작동으로 뽑아내는 진공 채널(14)를 포함하여 이루어지는 것을 특징으로 하는 ECR 식각 장비의 극저온 식각용 전극.
  2. 제1항에 있어서, 상기 상,하 이송축(20)과 에어 실린더(28)의 접촉부위에 축 카바(21)를 형성하는 것을 특징으로 하는 ECR 식각 장비의 극저온 식각용 전극.
  3. 제1항에 있어서, 상기 상,하 이송축(20)의 이동을 정확하게 이송시키기 위해 부쉬(27)를 갖는 직선운동 유니트(19)를 형성하는 것을 특징으로 하는 ECR 식각 장비의 극저온 식각용 전극.
  4. 제1항에 있어서, 상기 냉각가스가 상하 이송부로 유출되어지는 것을 막기 위하여 상기 네발 리프터(30)와 리프팅 핀(6)의 연결부위를 감싸는 벨로우즈(16) 형성하는 것을 특징으로 하는 ECR 식각 장비의 극저온 식각용 전극.
  5. 제1항에 있어서, 상기 에어 실린더(28)를 지지하면서 상기 공정 챔버 플레이트(32)와 함께 이슬맺힘을 방지하는 진공상태(C)를 유지하는 하부 진공 유지 플레이트(27)를 형성하는 것을 특징으로 하는 ECR 식각장비의 극저온 식각용 전극.
  6. 제1항에 있어서, 상기 웨이퍼 받침대(1)는 냉각 가스를 안내하는 가스 라인(38)과 상기 가스 라인(38)를 통해 웨이퍼 밑에 가스를 보내게 되는 가스 구멍(36)을 형성하는 것을 특징으로 하는 ECR 식각장비의 극저온 식각용 전극.
  7. 제1항에 있어서, 상기 웨이퍼 받침대(1)에 놓이는 웨이퍼는 접촉을 최소화 하기 위하여 상기 웨이퍼 받침대(1)에 0-링(10)을 형성하여 웨이퍼가 놓이는 상기 웨이퍼 받침대(1)와 웨이퍼 밑면 사이에 좁은 간격이 형성되어 지고 또한 상기 0-링(10)이 웨이퍼 밑에 주입되는 열전달 가스의 플라즈마 반응 공정실로 유출되어 지는 것을 막는 것을 특징으로 하는 ECR 식각 장비의 극저온 식각용 전극.
  8. 제1항에 있어서, 상기 냉매용 튜브(18)와 금속 접촉부를 단열제(29)로 형성하는 것을 특징으로 하는 ECR 식각 장비의 극저온 식각용 전극.
  9. 제6항에 있어서, 상기 가스 라인(38)은 웨이퍼 받침대(1) 내에 방사형으로 형성되어 가스 구멍(36)으로 열 전달 가스를 유출하는 것을 특징으로 하는 ECR 식각 장비의 극저온 식각용 전극.
  10. 제7항에 있어서, 상기 0-링(10)이 위치하는 웨이퍼 받침대(1)는 사다리꼴 모양의 골로 형성되어 지는 것을 특징으로 하는 ECR 식각 장비의 극저온 식각용 전극.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930001637A 1993-02-06 1993-02-06 이시알 장비 KR960006958B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019930001637A KR960006958B1 (ko) 1993-02-06 1993-02-06 이시알 장비
US08/192,403 US5558736A (en) 1993-02-06 1994-02-04 Electron cyclotron resonance apparatus
DE4403553A DE4403553C2 (de) 1993-02-06 1994-02-04 Elektronen-Zyklotron-Resonanz-Apparatur
JP1384694A JP3058549B2 (ja) 1993-02-06 1994-02-07 イーシーアール装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930001637A KR960006958B1 (ko) 1993-02-06 1993-02-06 이시알 장비

Publications (2)

Publication Number Publication Date
KR940020493A true KR940020493A (ko) 1994-09-16
KR960006958B1 KR960006958B1 (ko) 1996-05-25

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US (1) US5558736A (ko)
JP (1) JP3058549B2 (ko)
KR (1) KR960006958B1 (ko)
DE (1) DE4403553C2 (ko)

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JP3058549B2 (ja) 2000-07-04
US5558736A (en) 1996-09-24
DE4403553A1 (de) 1994-08-11
KR960006958B1 (ko) 1996-05-25
JPH06267902A (ja) 1994-09-22
DE4403553C2 (de) 2002-04-18

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