KR940016595A - Gate oxide film growth method by adding hydrochloric acid (HCl) - Google Patents

Gate oxide film growth method by adding hydrochloric acid (HCl) Download PDF

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Publication number
KR940016595A
KR940016595A KR1019920027326A KR920027326A KR940016595A KR 940016595 A KR940016595 A KR 940016595A KR 1019920027326 A KR1019920027326 A KR 1019920027326A KR 920027326 A KR920027326 A KR 920027326A KR 940016595 A KR940016595 A KR 940016595A
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KR
South Korea
Prior art keywords
hcl
oxide film
gate oxide
hydrochloric acid
growth method
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KR1019920027326A
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Korean (ko)
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KR100256266B1 (en
Inventor
엄금용
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김주용
현대전자산업 주식회사
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Priority to KR1019920027326A priority Critical patent/KR100256266B1/en
Publication of KR940016595A publication Critical patent/KR940016595A/en
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Publication of KR100256266B1 publication Critical patent/KR100256266B1/en

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Abstract

본 발명은 게이트 산화막 형성 공정시 HCl 가스를 첨가하여 게이트 산화막의 질을 향상시킴으로서 신뢰성 있는 트랜지스터의 제조를 가능케 하는 염산(HCl) 첨가에 의한 게이트 산화막 성장방법으로, 고압의 O2산소를 공정챔버(chamber)에 불어넣는 제 1 단계, 상기 제 1 단계 후에 O2: H2: HCl 가스를 불어넣는 제 2 단계를 포함하여 이루어지는 것을 특징으로 하는 염산(HCl) 첨가에 의한 게이트 산화막 성장방법에 관한 것이다.The present invention is hydrochloric acid (HCl) with a gate oxide film growth method by the addition of the O 2 oxygen of the high-pressure process chamber, which enables the reliable production of transistor gate oxide film forming step during the addition of HCl gas by improving the quality of the gate oxide film ( and a second step of blowing O 2 : H 2 : HCl gas after the first step, the method comprising the step of blowing into a chamber). .

Description

염산(HCl) 첨가에 의한 게이트 산화막 성장방법Gate oxide film growth method by adding hydrochloric acid (HCl)

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 종래의 게이트 산화막 성장 처리도, 제 3 도는 본 발명에 따른 I-V특성 그래프.1 is a conventional gate oxide film growth process, and FIG. 3 is an I-V characteristic graph according to the present invention.

Claims (4)

염산(HCl) 첨가에 의한 게이트 산화막 성장방법에 있어서, 고압의 O2산소를 공정챔버(chamber)에 불어넣는 제 1 단계, 상기 제 1 단계 후에 O2: H2: HCl 가스를 불어넣는 제 2 단계를 포함하여 이루어지는 것을 특징으로 하는 염산(HCl) 첨가에 의한 게이트 산화막 성장방법.In the method of growing a gate oxide film by adding hydrochloric acid (HCl), a first step of blowing high pressure O 2 oxygen into a process chamber, and a second step of blowing O 2 : H 2 : HCl gas after the first step Gate oxide film growth method by the addition of hydrochloric acid (HCl), characterized in that it comprises a step. 제 1 항에 있어서, 상기 제 2 단계의 O2는 고압인 것을 특징으로 하는 염산(HCl) 첨가에 의한 게이트 산화막 성장방법.The method of claim 1, wherein the second step of O 2 is a high pressure. 제 1 항에 있어서, 상기 제 2 단계의 O2: H2: HCl은 8:8:2.4 SLPM(standard litter per meter)인 것을 특징으로 하는 염산(HCl) 첨가에 의한 게이트 산화막 성장방법.The method of claim 1, wherein the O 2 : H 2 : HCl in the second step is 8: 8: 2.4 standard litter per meter (SLPM). 제 1 항에 있어서, 상기 제 2 단계는 8분 내지 9분 30동안 진행되어지는 것을 특징으로 하는 염산(HCl) 첨가에 의한 게이트 산화막 성장방법.The method of claim 1, wherein the second step is performed for 8 minutes to 9 minutes 30. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920027326A 1992-12-31 1992-12-31 Method of manufacturing gate oxide of semiconductor device KR100256266B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920027326A KR100256266B1 (en) 1992-12-31 1992-12-31 Method of manufacturing gate oxide of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920027326A KR100256266B1 (en) 1992-12-31 1992-12-31 Method of manufacturing gate oxide of semiconductor device

Publications (2)

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KR940016595A true KR940016595A (en) 1994-07-23
KR100256266B1 KR100256266B1 (en) 2000-05-15

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KR1019920027326A KR100256266B1 (en) 1992-12-31 1992-12-31 Method of manufacturing gate oxide of semiconductor device

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KR100256266B1 (en) 2000-05-15

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