KR940016595A - Gate oxide film growth method by adding hydrochloric acid (HCl) - Google Patents
Gate oxide film growth method by adding hydrochloric acid (HCl) Download PDFInfo
- Publication number
- KR940016595A KR940016595A KR1019920027326A KR920027326A KR940016595A KR 940016595 A KR940016595 A KR 940016595A KR 1019920027326 A KR1019920027326 A KR 1019920027326A KR 920027326 A KR920027326 A KR 920027326A KR 940016595 A KR940016595 A KR 940016595A
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- KR
- South Korea
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- hcl
- oxide film
- gate oxide
- hydrochloric acid
- growth method
- Prior art date
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Abstract
본 발명은 게이트 산화막 형성 공정시 HCl 가스를 첨가하여 게이트 산화막의 질을 향상시킴으로서 신뢰성 있는 트랜지스터의 제조를 가능케 하는 염산(HCl) 첨가에 의한 게이트 산화막 성장방법으로, 고압의 O2산소를 공정챔버(chamber)에 불어넣는 제 1 단계, 상기 제 1 단계 후에 O2: H2: HCl 가스를 불어넣는 제 2 단계를 포함하여 이루어지는 것을 특징으로 하는 염산(HCl) 첨가에 의한 게이트 산화막 성장방법에 관한 것이다.The present invention is hydrochloric acid (HCl) with a gate oxide film growth method by the addition of the O 2 oxygen of the high-pressure process chamber, which enables the reliable production of transistor gate oxide film forming step during the addition of HCl gas by improving the quality of the gate oxide film ( and a second step of blowing O 2 : H 2 : HCl gas after the first step, the method comprising the step of blowing into a chamber). .
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제 1 도는 종래의 게이트 산화막 성장 처리도, 제 3 도는 본 발명에 따른 I-V특성 그래프.1 is a conventional gate oxide film growth process, and FIG. 3 is an I-V characteristic graph according to the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019920027326A KR100256266B1 (en) | 1992-12-31 | 1992-12-31 | Method of manufacturing gate oxide of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920027326A KR100256266B1 (en) | 1992-12-31 | 1992-12-31 | Method of manufacturing gate oxide of semiconductor device |
Publications (2)
Publication Number | Publication Date |
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KR940016595A true KR940016595A (en) | 1994-07-23 |
KR100256266B1 KR100256266B1 (en) | 2000-05-15 |
Family
ID=19348488
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019920027326A KR100256266B1 (en) | 1992-12-31 | 1992-12-31 | Method of manufacturing gate oxide of semiconductor device |
Country Status (1)
Country | Link |
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KR (1) | KR100256266B1 (en) |
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1992
- 1992-12-31 KR KR1019920027326A patent/KR100256266B1/en not_active IP Right Cessation
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Publication number | Publication date |
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KR100256266B1 (en) | 2000-05-15 |
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