KR950015556A - Natural Oxide Growth Inhibition Method - Google Patents

Natural Oxide Growth Inhibition Method Download PDF

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Publication number
KR950015556A
KR950015556A KR1019930023350A KR930023350A KR950015556A KR 950015556 A KR950015556 A KR 950015556A KR 1019930023350 A KR1019930023350 A KR 1019930023350A KR 930023350 A KR930023350 A KR 930023350A KR 950015556 A KR950015556 A KR 950015556A
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KR
South Korea
Prior art keywords
growth
oxide film
natural oxide
film
growth inhibition
Prior art date
Application number
KR1019930023350A
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Korean (ko)
Inventor
이성희
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930023350A priority Critical patent/KR950015556A/en
Publication of KR950015556A publication Critical patent/KR950015556A/en

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  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체 소자의 제조공정 중 화학기상증착장비를 이웅한 증착막 형성시 자연적으로 형성되어 소자특성 저하의 한 원인이 되는 자연산화막의 성장을 억제하는 자연산하막 성장억제 방법에 관한 것으로, 증착막 형성 전 대기시 온도를 상온으로 함으로써 종래 튜브에 대기시의 높은 온도로 인해 빠른 속도로 성장되 던 자연산화막의 성장을 감소시켜 특히, 콘택형성을 위한 다결정실리콘막 증착시 적용될 경우 콘택저항을 크게 감소시키는 효과를 얻을 수 있다.The present invention relates to a method for suppressing the growth of a native oxide film which is naturally formed during the formation of a deposited film formed by chemical vapor deposition equipment during the manufacturing process of a semiconductor device, and which suppresses the growth of a native oxide film which is a cause of deterioration of device characteristics. By reducing the temperature of all the air at room temperature, the growth of the natural oxide film, which was grown at a rapid rate due to the high temperature of the air in the conventional tube, greatly reduces the contact resistance, especially when applied to the deposition of a polysilicon film for forming a contact. The effect can be obtained.

Description

자연산화막 성장억제 방법Natural Oxide Growth Inhibition Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (2)

화학기상증착비를 이용한 증착막 형성시 자연산화막 성장 억제 방법에 있어서, 증착막 형성전 대기시 온도를 상온으로 함을 특징으로 하는 자연산화막 성장억제 방법.A method for inhibiting growth of a native oxide film during formation of a deposited film using a chemical vapor deposition ratio, wherein the standby temperature before deposition is formed at room temperature. 제1항에 있어서, 상기 증착막은 콘택형성용 다결정실리콘막인 것을 특징으로 하는 자연산화막 성장억제 방법.The method of claim 1, wherein the deposited film is a contact forming polysilicon film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930023350A 1993-11-04 1993-11-04 Natural Oxide Growth Inhibition Method KR950015556A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930023350A KR950015556A (en) 1993-11-04 1993-11-04 Natural Oxide Growth Inhibition Method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930023350A KR950015556A (en) 1993-11-04 1993-11-04 Natural Oxide Growth Inhibition Method

Publications (1)

Publication Number Publication Date
KR950015556A true KR950015556A (en) 1995-06-17

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930023350A KR950015556A (en) 1993-11-04 1993-11-04 Natural Oxide Growth Inhibition Method

Country Status (1)

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KR (1) KR950015556A (en)

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