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Priority to KR1019900012328ApriorityCriticalpatent/KR920005354A/en
Publication of KR920005354ApublicationCriticalpatent/KR920005354A/en
반도체소자의 생산율 향상방법How to improve production rate of semiconductor device
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1도는 본 발명과 종래기술과의 비교 그래프.1 is a graph comparing the present invention with the prior art.
Claims (4)
반도체 제조공정중 이온주입 공정에 있어서, 이온주입후 일정온도로 열처리공정 및 세척공정을 차례로 실시하므로써 파티클에 의한 오염을 방지할 수 있도록 함을 특징으로 하는 반도체 소자의 생산율 향상방법.A method of improving the production rate of a semiconductor device, characterized in that the ion implantation step in the semiconductor manufacturing process prevents contamination by particles by sequentially performing a heat treatment step and a washing step at a predetermined temperature after ion implantation.제1항에 있어서, 열처리를 행하는 일정온도는 약700-1200℃로 함을 특징으로 하는 반도체소자의 생산율 향상방법.The method of claim 1, wherein the predetermined temperature at which heat treatment is performed is about 700-1200 ° C.제1항에 있어서, 별도의 열처리공정이 없을 경우에는 RTP로 어닐링함을 특징으로 하는 반도체소자의 생산율 향상방법.The method of claim 1, wherein the annealing is performed by RTP when there is no separate heat treatment process.제1항에 있어서, 세척공정은 STP 또는 RCA로 함을 특징으로 하는 반도체소자의 생산율 향상방법.The method of claim 1, wherein the washing process is performed using STP or RCA.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임※ Note: The disclosure is based on the initial application.
KR1019900012328A1990-08-101990-08-10
How to improve production rate of semiconductor device
KR920005354A
(en)