KR890001167A - Manufacturing Method of Semiconductor Device - Google Patents

Manufacturing Method of Semiconductor Device Download PDF

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Publication number
KR890001167A
KR890001167A KR1019870006728A KR870006728A KR890001167A KR 890001167 A KR890001167 A KR 890001167A KR 1019870006728 A KR1019870006728 A KR 1019870006728A KR 870006728 A KR870006728 A KR 870006728A KR 890001167 A KR890001167 A KR 890001167A
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KR
South Korea
Prior art keywords
film
manufacturing
semiconductor device
bpsg film
bpsg
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Application number
KR1019870006728A
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Korean (ko)
Other versions
KR890004885B1 (en
Inventor
이철진
김의송
Original Assignee
강진구
삼성반도체통신 주식회사
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Publication date
Application filed by 강진구, 삼성반도체통신 주식회사 filed Critical 강진구
Priority to KR8706728A priority Critical patent/KR890004885B1/en
Publication of KR890001167A publication Critical patent/KR890001167A/en
Application granted granted Critical
Publication of KR890004885B1 publication Critical patent/KR890004885B1/en

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Abstract

내용 없음No content

Description

반도체 장치의 제조방법Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1(A)-(B)도는 본 발명에 따른 제조 공정도.1 (A)-(B) are manufacturing process diagrams according to the present invention.

Claims (2)

반도체 장치의 제조방법에 있어서, 반도체 소자상의 소정 절연막(3)상에 BPSG 막(4)을 도포하는 제1공정과, 상기 BPSG 막(4)상에 소정두께의 고농도 PSG 막(7)을 도포하는 제2공정과, 소정 온도의 질소개스나 POS13 분위기에서 소정시간 동안 BPSG 막(4)을 리플로우 시키는 제3공정과, BPSG 막의 리플로우가 끝난후 BPSG 막 (4)상의 PSG 막(7)을 제거하는 제4공정을 구비하여 상기 공정들의 연속으로 BPSG막을 리플로우 시킴을 특징으로 하는 반도체 장치의 제조방법.1. A method of manufacturing a semiconductor device, comprising: a first step of applying a BPSG film 4 on a predetermined insulating film 3 on a semiconductor element; and a high concentration PSG film 7 having a predetermined thickness on the BPSG film 4. A second step to reflow the BPSG film 4 for a predetermined time in a nitrogen gas or POS13 atmosphere at a predetermined temperature; and a PSG film 7 on the BPSG film 4 after the reflow of the BPSG film is completed. And reflowing the BPSG film in a sequential manner by the fourth step of removing the film. 제 1 항에 있어서, 제 2 공정의 PSG 막(7)이 두께가 1500-2000Å이고 농도가 9.0wt%이상임을 특징으로 하는 반도체 장치의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein the PSG film (7) of the second step has a thickness of 1500-2000 GPa and a concentration of 9.0 wt% or more. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR8706728A 1987-06-30 1987-06-30 Reflow method of bpsg film for semiconductor device KR890004885B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR8706728A KR890004885B1 (en) 1987-06-30 1987-06-30 Reflow method of bpsg film for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR8706728A KR890004885B1 (en) 1987-06-30 1987-06-30 Reflow method of bpsg film for semiconductor device

Publications (2)

Publication Number Publication Date
KR890001167A true KR890001167A (en) 1989-03-18
KR890004885B1 KR890004885B1 (en) 1989-11-30

Family

ID=19262484

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8706728A KR890004885B1 (en) 1987-06-30 1987-06-30 Reflow method of bpsg film for semiconductor device

Country Status (1)

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KR (1) KR890004885B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5651525A (en) * 1994-06-28 1997-07-29 Yang; Sikyung Reading stand
KR100256418B1 (en) * 1998-02-21 2000-06-01 윤종용 Structure of drawer in drawer type kimch'i store house

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5651525A (en) * 1994-06-28 1997-07-29 Yang; Sikyung Reading stand
KR100256418B1 (en) * 1998-02-21 2000-06-01 윤종용 Structure of drawer in drawer type kimch'i store house

Also Published As

Publication number Publication date
KR890004885B1 (en) 1989-11-30

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