KR950021271A - Method of manufacturing thin film transistor - Google Patents

Method of manufacturing thin film transistor Download PDF

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Publication number
KR950021271A
KR950021271A KR1019930030803A KR930030803A KR950021271A KR 950021271 A KR950021271 A KR 950021271A KR 1019930030803 A KR1019930030803 A KR 1019930030803A KR 930030803 A KR930030803 A KR 930030803A KR 950021271 A KR950021271 A KR 950021271A
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KR
South Korea
Prior art keywords
oxide film
thin film
film transistor
nitriding
film
Prior art date
Application number
KR1019930030803A
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Korean (ko)
Inventor
이현우
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930030803A priority Critical patent/KR950021271A/en
Publication of KR950021271A publication Critical patent/KR950021271A/en

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Abstract

본 발명은 하층절연막(1)상에 게이트 폴리실리콘 패턴(2)를 형성하고 웨이퍼 전체구조 상부에 게이트 산화막(4)을 형성하는 공정을 포함하여 이루어지는 박막트랜지스터 제조 방법에 있어서, 상기 게이트 폴리실리콘 패턴(2)표면에 형성되는 자연산화막(3)을 질화시켜 옥시나이트라이드(oxinitride)막(3')으로 형성한 이후에 게이트산화막(4)을 증착하는 것을 특징으로 하는 박막트랜지스터 제조 방법에 관한 것으로, 자연 산화막을 질화하여 스트레스 인가시 전하의 트랩핑(trapping)을 억제하므로써 TFT의 문턱 전압의 이동을 억제하여 소자의 신회성을 향상시키는 효과가 있다.The present invention includes forming a gate polysilicon pattern (2) on the lower insulating film (1) and forming a gate oxide film (4) on the entire wafer structure, wherein the gate polysilicon pattern (2) a method of manufacturing a thin film transistor, characterized in that the gate oxide film 4 is deposited after nitriding the natural oxide film 3 formed on the surface to form an oxynitride film 3 '. By nitriding the native oxide film and suppressing trapping of charge when stress is applied, it is possible to suppress the shift of the threshold voltage of the TFT to improve the renality of the device.

Description

박막트랜지스터 제조 방법Method of manufacturing thin film transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 또는 제1D도는 본 발명에 따른 박막트랜지스터 제조 공정도이다.1A or 1D is a process chart for manufacturing a thin film transistor according to the present invention.

Claims (3)

하층절연막(1)상에 게이트 폴리실리콘 패턴(2)를 형성하고 웨이퍼 전체구조 상부에 게이트 산화막(4)을 형성하는 공정을 포함하여 이루어지는 박막트랜지스터 제조 방법에 있어서, 상기 게이트 폴리실리콘 패턴(2)표면에 형성되는 자연산화막(3)을 질화시켜 옥시나이트라이드(oxinitride)막(3')으로 형성한 이후에 게이트산화막(4)을 증착하는 것을 특징으로 하는 박막트랜지스터 제조 방법A method of manufacturing a thin film transistor comprising forming a gate polysilicon pattern 2 on a lower insulating film 1 and forming a gate oxide film 4 over the entire wafer structure, wherein the gate polysilicon pattern 2 is formed. A method of manufacturing a thin film transistor, characterized in that the gate oxide film 4 is deposited after nitriding the natural oxide film 3 formed on the surface to form an oxynitride film 3 '. 제1항에 있어서, 상기 자연산화막(3)을 질화시켜 옥시나이트라이드드(oxinitride)막(3')으로 형성하는 공정은 NH3가스 분위기, 800~900℃의 온도 및 저압의 공정조건에서 10분 내지 30분 동안 실시하여 이루어지는 것을 특징으로 하는 박막트랜지스터 제조 방법.2. The process of claim 1, wherein the step of nitriding the natural oxide film 3 to form an oxynitride film 3 'is carried out in an NH 3 gas atmosphere, at a temperature of 800 to 900 DEG C and a low pressure process condition. The thin film transistor manufacturing method, characterized in that performed for minutes to 30 minutes. 제1항에 있어서, 상기 자연산화막(3)을 질화시켜 옥시나이트라이드드(oxinitride)막(3')으로 형성하는 공정은 NH3가스 분위기, 800~900℃의 온도 및 상압의 공정조건에서 20초 내지 60초동안 실시하여 이루어지는 것을 특징으로 하는 박막트랜지스터 제조 방법.The process of claim 1, wherein the step of nitriding the natural oxide film 3 to form an oxynitride film 3 'is carried out in an NH 3 gas atmosphere, at a temperature of 800 to 900 ° C. and a normal pressure. A thin film transistor manufacturing method, characterized in that performed for seconds to 60 seconds. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930030803A 1993-12-29 1993-12-29 Method of manufacturing thin film transistor KR950021271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930030803A KR950021271A (en) 1993-12-29 1993-12-29 Method of manufacturing thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930030803A KR950021271A (en) 1993-12-29 1993-12-29 Method of manufacturing thin film transistor

Publications (1)

Publication Number Publication Date
KR950021271A true KR950021271A (en) 1995-07-26

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Application Number Title Priority Date Filing Date
KR1019930030803A KR950021271A (en) 1993-12-29 1993-12-29 Method of manufacturing thin film transistor

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100361537B1 (en) * 1995-12-27 2003-02-05 주식회사 하이닉스반도체 Method for manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100361537B1 (en) * 1995-12-27 2003-02-05 주식회사 하이닉스반도체 Method for manufacturing semiconductor device

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