KR950021271A - Method of manufacturing thin film transistor - Google Patents
Method of manufacturing thin film transistor Download PDFInfo
- Publication number
- KR950021271A KR950021271A KR1019930030803A KR930030803A KR950021271A KR 950021271 A KR950021271 A KR 950021271A KR 1019930030803 A KR1019930030803 A KR 1019930030803A KR 930030803 A KR930030803 A KR 930030803A KR 950021271 A KR950021271 A KR 950021271A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- thin film
- film transistor
- nitriding
- film
- Prior art date
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- Formation Of Insulating Films (AREA)
Abstract
본 발명은 하층절연막(1)상에 게이트 폴리실리콘 패턴(2)를 형성하고 웨이퍼 전체구조 상부에 게이트 산화막(4)을 형성하는 공정을 포함하여 이루어지는 박막트랜지스터 제조 방법에 있어서, 상기 게이트 폴리실리콘 패턴(2)표면에 형성되는 자연산화막(3)을 질화시켜 옥시나이트라이드(oxinitride)막(3')으로 형성한 이후에 게이트산화막(4)을 증착하는 것을 특징으로 하는 박막트랜지스터 제조 방법에 관한 것으로, 자연 산화막을 질화하여 스트레스 인가시 전하의 트랩핑(trapping)을 억제하므로써 TFT의 문턱 전압의 이동을 억제하여 소자의 신회성을 향상시키는 효과가 있다.The present invention includes forming a gate polysilicon pattern (2) on the lower insulating film (1) and forming a gate oxide film (4) on the entire wafer structure, wherein the gate polysilicon pattern (2) a method of manufacturing a thin film transistor, characterized in that the gate oxide film 4 is deposited after nitriding the natural oxide film 3 formed on the surface to form an oxynitride film 3 '. By nitriding the native oxide film and suppressing trapping of charge when stress is applied, it is possible to suppress the shift of the threshold voltage of the TFT to improve the renality of the device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1A도 또는 제1D도는 본 발명에 따른 박막트랜지스터 제조 공정도이다.1A or 1D is a process chart for manufacturing a thin film transistor according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930030803A KR950021271A (en) | 1993-12-29 | 1993-12-29 | Method of manufacturing thin film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930030803A KR950021271A (en) | 1993-12-29 | 1993-12-29 | Method of manufacturing thin film transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950021271A true KR950021271A (en) | 1995-07-26 |
Family
ID=66853247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930030803A KR950021271A (en) | 1993-12-29 | 1993-12-29 | Method of manufacturing thin film transistor |
Country Status (1)
Country | Link |
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KR (1) | KR950021271A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100361537B1 (en) * | 1995-12-27 | 2003-02-05 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
-
1993
- 1993-12-29 KR KR1019930030803A patent/KR950021271A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100361537B1 (en) * | 1995-12-27 | 2003-02-05 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
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