KR950002069A - Gate node contact formation method of thin film transistor - Google Patents
Gate node contact formation method of thin film transistor Download PDFInfo
- Publication number
- KR950002069A KR950002069A KR1019930011741A KR930011741A KR950002069A KR 950002069 A KR950002069 A KR 950002069A KR 1019930011741 A KR1019930011741 A KR 1019930011741A KR 930011741 A KR930011741 A KR 930011741A KR 950002069 A KR950002069 A KR 950002069A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- thin film
- film transistor
- contact
- film
- Prior art date
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- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
본 발명의 박막트랜지스터의 게이트 노드 콘택 형성방법에 관한 것으로, 게이트 전극(1), 게이트 산화막(2) 형성후 박막트랜지스터의 게이트 노드 콘택 형성방법에 있어서, 전체구조 상부에 제 1 폴리실리콘막(3)을 증착하는 제 1 단계, 상기 게이트 산화막(2), 제 1 폴리실리콘막(3)을 소정부위 제거하여 콘택부위(4)를 오픈시키는 제 2 단계 및, 전체구조 상부에 제 2 폴리실리콘막(5)을 증착하여 콘택을 형성하는 제 3 단계를 포함하여 제 1 폴리실리콘막을 형성하여 게이트 산화막을 보호한 뒤 콘택형성용 제 2 폴리실리콘막을 형성함으로써, 게이트 산화막의 막질이 저하되는 것을 막고 균일성을 유지하여 박막트랜지스터의 특성 개선의 효과를 얻을 수 있다.A method of forming a gate node contact of a thin film transistor of the present invention, the method comprising: forming a gate node contact of a thin film transistor after forming a gate electrode (1) and a gate oxide film (2), wherein the first polysilicon film (3) A second step of removing the predetermined portion of the gate oxide film (2) and the first polysilicon film (3) to open the contact portion (4), and a second polysilicon film on the entire structure (5) forming a first polysilicon film to form a contact by depositing a contact to protect the gate oxide film and then forming a second polysilicon film for contact formation, thereby preventing the film quality of the gate oxide film from deteriorating and being uniform. Maintaining the properties can obtain the effect of improving the characteristics of the thin film transistor.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제 2 도는 본 발명의 일 실시예에 따른 게이트 노드 콘택 형성공정 단면도.2 is a cross-sectional view of a gate node contact forming process according to an embodiment of the present invention.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930011741A KR950002069A (en) | 1993-06-25 | 1993-06-25 | Gate node contact formation method of thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930011741A KR950002069A (en) | 1993-06-25 | 1993-06-25 | Gate node contact formation method of thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR950002069A true KR950002069A (en) | 1995-01-04 |
Family
ID=67134799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930011741A KR950002069A (en) | 1993-06-25 | 1993-06-25 | Gate node contact formation method of thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950002069A (en) |
-
1993
- 1993-06-25 KR KR1019930011741A patent/KR950002069A/en not_active Application Discontinuation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Withdrawal due to no request for examination |