KR950025984A - Capacitor Manufacturing Method - Google Patents
Capacitor Manufacturing Method Download PDFInfo
- Publication number
- KR950025984A KR950025984A KR1019940003882A KR19940003882A KR950025984A KR 950025984 A KR950025984 A KR 950025984A KR 1019940003882 A KR1019940003882 A KR 1019940003882A KR 19940003882 A KR19940003882 A KR 19940003882A KR 950025984 A KR950025984 A KR 950025984A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- forming
- silicide
- capacitor
- buffer
- Prior art date
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- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
반도체 소자의 제조공정중 폴리사이드 구조 게이트전극을 이용한 캐패시터 제조방법에 관한 것으로, 필드산화막(10)까지 형성후 게이트절연막(20), 제1다결정 실리콘막(30), 실리사이드막(40)을 형성하는 단계 ; 상기 실리사이드막(40) 상에 완충막(50)을 형성하는 단계 ; 상기 완충막(50)상에 유전막(60)을 형성하고, 제2다결정실리콘막(70)을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 함으로써 본 발명은 폴리사이드 구조의 텅스텐 실리사이드 층의 손상을 방지하면서 다결정 실리콘 캐패시터 특성을 좋게하고 공정에 따른 변화를 줄여서 소자의 신뢰도 향상을 꾀할 수 있다.The present invention relates to a method for manufacturing a capacitor using a polyside structure gate electrode during a semiconductor device manufacturing process. The gate insulating film 20, the first polycrystalline silicon film 30, and the silicide film 40 are formed after the field oxide film 10 is formed. Doing; Forming a buffer film 50 on the silicide film 40; Forming a dielectric film 60 on the buffer film 50, and forming a second polysilicon film 70, the present invention prevents damage to the tungsten silicide layer of a polyside structure At the same time, it is possible to improve the reliability of the device by improving the characteristics of the polycrystalline silicon capacitor and reducing the change according to the process.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제3도는 본 발명에 따른 공정 흐름도.3 is a process flow diagram in accordance with the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940003882A KR950025984A (en) | 1994-02-28 | 1994-02-28 | Capacitor Manufacturing Method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940003882A KR950025984A (en) | 1994-02-28 | 1994-02-28 | Capacitor Manufacturing Method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950025984A true KR950025984A (en) | 1995-09-18 |
Family
ID=66689616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940003882A KR950025984A (en) | 1994-02-28 | 1994-02-28 | Capacitor Manufacturing Method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950025984A (en) |
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1994
- 1994-02-28 KR KR1019940003882A patent/KR950025984A/en not_active Application Discontinuation
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