KR950025984A - Capacitor Manufacturing Method - Google Patents

Capacitor Manufacturing Method Download PDF

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Publication number
KR950025984A
KR950025984A KR1019940003882A KR19940003882A KR950025984A KR 950025984 A KR950025984 A KR 950025984A KR 1019940003882 A KR1019940003882 A KR 1019940003882A KR 19940003882 A KR19940003882 A KR 19940003882A KR 950025984 A KR950025984 A KR 950025984A
Authority
KR
South Korea
Prior art keywords
film
forming
silicide
capacitor
buffer
Prior art date
Application number
KR1019940003882A
Other languages
Korean (ko)
Inventor
서난경
이주일
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940003882A priority Critical patent/KR950025984A/en
Publication of KR950025984A publication Critical patent/KR950025984A/en

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  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

반도체 소자의 제조공정중 폴리사이드 구조 게이트전극을 이용한 캐패시터 제조방법에 관한 것으로, 필드산화막(10)까지 형성후 게이트절연막(20), 제1다결정 실리콘막(30), 실리사이드막(40)을 형성하는 단계 ; 상기 실리사이드막(40) 상에 완충막(50)을 형성하는 단계 ; 상기 완충막(50)상에 유전막(60)을 형성하고, 제2다결정실리콘막(70)을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 함으로써 본 발명은 폴리사이드 구조의 텅스텐 실리사이드 층의 손상을 방지하면서 다결정 실리콘 캐패시터 특성을 좋게하고 공정에 따른 변화를 줄여서 소자의 신뢰도 향상을 꾀할 수 있다.The present invention relates to a method for manufacturing a capacitor using a polyside structure gate electrode during a semiconductor device manufacturing process. The gate insulating film 20, the first polycrystalline silicon film 30, and the silicide film 40 are formed after the field oxide film 10 is formed. Doing; Forming a buffer film 50 on the silicide film 40; Forming a dielectric film 60 on the buffer film 50, and forming a second polysilicon film 70, the present invention prevents damage to the tungsten silicide layer of a polyside structure At the same time, it is possible to improve the reliability of the device by improving the characteristics of the polycrystalline silicon capacitor and reducing the change according to the process.

Description

캐패시터 제조방법Capacitor Manufacturing Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 따른 공정 흐름도.3 is a process flow diagram in accordance with the present invention.

Claims (4)

반도체 소자의 제조공정중 폴리사이드 구조 게이트전극을 이용한 캐패시터 제조방법에 있어서, 필드산화막(10)까지 형성후 게이트절연막(20), 제1다결정 실리콘막(30), 실리사이드막(40)을 형성하는 단계 ; 상기 실리사이드막(40) 상에 완충막(50)을 형성하는 단계 ; 상기 완충막(50)상에 유전막(60)을 형성하고, 제2다결정실리콘막(70)을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 캐패시터 제조방법.In the method of manufacturing a capacitor using a polyside structure gate electrode during a semiconductor device manufacturing process, the gate insulating film 20, the first polycrystalline silicon film 30, and the silicide film 40 are formed after the field oxide film 10 is formed. step ; Forming a buffer film 50 on the silicide film 40; Forming a dielectric film (60) on the buffer film (50), and forming a second polysilicon film (70). 제1항에 있어서, 상기 실리사이드막(40)은 텅스텐실리사이드막인 것을 특징으로 하는 캐패시터 제조방법.The method of claim 1, wherein the silicide film (40) is a tungsten silicide film. 제1항에 있어서, 상기 완충막(50)은 인시튜로 도핑된 다결정실리콘막인 것을 특징으로 하는 캐패시터 제조방법.The method of claim 1, wherein the buffer film (50) is a capacitor manufacturing method, characterized in that the polysilicon film doped in situ. 제1항에 있어서, 상기 유전막은 화학 중착법으로 중착되는 막인 것을 특징으로 하는 캐패시터제조방법.The method of claim 1, wherein the dielectric film is a film deposited by chemical deposition. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940003882A 1994-02-28 1994-02-28 Capacitor Manufacturing Method KR950025984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940003882A KR950025984A (en) 1994-02-28 1994-02-28 Capacitor Manufacturing Method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940003882A KR950025984A (en) 1994-02-28 1994-02-28 Capacitor Manufacturing Method

Publications (1)

Publication Number Publication Date
KR950025984A true KR950025984A (en) 1995-09-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940003882A KR950025984A (en) 1994-02-28 1994-02-28 Capacitor Manufacturing Method

Country Status (1)

Country Link
KR (1) KR950025984A (en)

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