KR940008013A - Method of forming gate insulating film of semiconductor device - Google Patents

Method of forming gate insulating film of semiconductor device Download PDF

Info

Publication number
KR940008013A
KR940008013A KR1019920017190A KR920017190A KR940008013A KR 940008013 A KR940008013 A KR 940008013A KR 1019920017190 A KR1019920017190 A KR 1019920017190A KR 920017190 A KR920017190 A KR 920017190A KR 940008013 A KR940008013 A KR 940008013A
Authority
KR
South Korea
Prior art keywords
insulating film
gate insulating
semiconductor device
forming
gas
Prior art date
Application number
KR1019920017190A
Other languages
Korean (ko)
Other versions
KR950009937B1 (en
Inventor
이병훈
박진성
이우성
정동진
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019920017190A priority Critical patent/KR950009937B1/en
Publication of KR940008013A publication Critical patent/KR940008013A/en
Application granted granted Critical
Publication of KR950009937B1 publication Critical patent/KR950009937B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 MOS 소자의 게이트절연막 형성방법에 관한 것으로, 반도체소자의 게이트 절연막을 형성하는 방법에 있어서, N2O가스와 상기 N2O가스유량의 1~3%에 해당하는 소량의 성장촉매가스를 함께 흘려주어 로내에서 산화막을 성장시키는 것을 특징으로 하는 반도체소자의 게이트절연막 형성방법을 제공한다.The present invention relates to a method of forming a gate insulating film of a MOS device, the method of forming a gate insulating film of a semiconductor device, a small amount of growth catalyst gas corresponding to 1 to 3% of the N 2 O gas and the N 2 O gas flow rate The present invention provides a method of forming a gate insulating film of a semiconductor device, characterized in that the oxide film is grown in a furnace by flowing together.

본 발명에 의하면, 단시간내에 신뢰성 높은 고품질의 게이트산화막의 제조가 가능하게 된다.According to the present invention, a highly reliable high quality gate oxide film can be produced in a short time.

Description

반도체소자의 게이트절연막 형성방법Method of forming gate insulating film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 실시예에 의한 게이트산화막의 형성공정과정을 나타낸 것이다.2 shows a process of forming a gate oxide film according to an embodiment of the present invention.

Claims (2)

반도체소자의 게이트절연막을 형성하는 방법에 있어서, N20가스와 상기 N2O가스유량의 1~3%에 해당하는 소량의 성장촉매가스를 함께 흘려주어 로내에서 산화막을 성장시키는 것을 특징으로 하는 반도체소자의 게이트절연막 형성방법.A method of forming a gate insulating film of a semiconductor device, N 2 0 given gas and the N 2 O with a small amount of a growth catalyst gas corresponding to 1-3% of the gas flow flowing along, comprising a step of growing an oxide layer from the furnace A method of forming a gate insulating film of a semiconductor device. 제1항에 있어서, 상기 성자촉매가스로 O2, O2와 H2의 혼합가스 또는 H2O를 사용하는 것을 특징으로 하는 반도체소자의 게이트절연막 형성방법.The method of claim 1, wherein a mixed gas of O 2 , O 2 and H 2 , or H 2 O is used as the saint catalyst gas. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920017190A 1992-09-21 1992-09-21 Gate insulate film forming method of semiconductor device KR950009937B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920017190A KR950009937B1 (en) 1992-09-21 1992-09-21 Gate insulate film forming method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920017190A KR950009937B1 (en) 1992-09-21 1992-09-21 Gate insulate film forming method of semiconductor device

Publications (2)

Publication Number Publication Date
KR940008013A true KR940008013A (en) 1994-04-28
KR950009937B1 KR950009937B1 (en) 1995-09-01

Family

ID=19339873

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920017190A KR950009937B1 (en) 1992-09-21 1992-09-21 Gate insulate film forming method of semiconductor device

Country Status (1)

Country Link
KR (1) KR950009937B1 (en)

Also Published As

Publication number Publication date
KR950009937B1 (en) 1995-09-01

Similar Documents

Publication Publication Date Title
ATE280150T1 (en) METHOD FOR PRODUCING MONO-LONG CHAIN AMINO OXIDE SURFACTANTS WITH LOW NITRITE, NITROSAMINE AND RESIDUAL PEROXIDE CONTENT
DE69803067D1 (en) METHOD FOR PRODUCING GAN CRYSTALS WITH HIGH RESISTANCE
JPS5587444A (en) Method of forming insulating film on semiconductor surface
KR830009230A (en) Method of manufacturing molten metal in molten iron
KR920005271A (en) Manufacturing Method of Semiconductor Device
DE3686089D1 (en) METHOD FOR PRODUCING A METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND TRANSISTOR PRODUCED BY IT.
KR940008013A (en) Method of forming gate insulating film of semiconductor device
KR850700085A (en) Liquid epitaxial growth method
KR970052828A (en) Low dielectric constant thin film manufacturing method using SF_6 gas
KR910013437A (en) Manufacturing method of diffusion type semiconductor device
KR950002070A (en) Gate oxide film formation method
KR940016588A (en) Gate oxide film formation method of a semiconductor device
KR910009968A (en) Single Crystal Manufacturing Equipment
KR930008988A (en) BPSG film formation method
KR920000124A (en) Semiconductor substrate surface treatment method
KR910001892A (en) Phosphorus Doped Oxide Flow Process Method
KR950015636A (en) Gate oxide film formation method of a semiconductor device
KR100278281B1 (en) Method of forming gate insulating layer of semiconductor device
KR920013743A (en) Gate Forming Method Using Thermal Oxidation Process
KR920017252A (en) High resistor manufacturing method
KR970052801A (en) Gate oxide film formation method
JPS55113376A (en) Manufacturing method of semiconductor device
KR960026634A (en) Method of preventing coarsening of aluminum compound layer due to lattice mismatch
KR960012368A (en) Oxide film formation method by high temperature process
JPS5337127A (en) Soft amorphous magnetic material and its production

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20050802

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee