KR950009937B1 - Gate insulate film forming method of semiconductor device - Google Patents
Gate insulate film forming method of semiconductor device Download PDFInfo
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- KR950009937B1 KR950009937B1 KR1019920017190A KR920017190A KR950009937B1 KR 950009937 B1 KR950009937 B1 KR 950009937B1 KR 1019920017190 A KR1019920017190 A KR 1019920017190A KR 920017190 A KR920017190 A KR 920017190A KR 950009937 B1 KR950009937 B1 KR 950009937B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title claims description 25
- 239000003054 catalyst Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 abstract description 32
- 238000007599 discharging Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
Description
제1도는 종래의 게이트산화막 형성공정과정을 나타낸 것이고,1 shows a conventional gate oxide film forming process.
제2도는 본 발명의 실시예에 의한 게이트산화막의 형성공정과정을 나타낸 것이다.2 shows a process of forming a gate oxide film according to an embodiment of the present invention.
본 발명은 MOS소자의 게이트절연막 형성방법에 관한 것으로, 특히 고품질의 게이트산화막의 형성방법에 관한 것이다.The present invention relates to a method of forming a gate insulating film of a MOS device, and more particularly to a method of forming a high quality gate oxide film.
종래의 MOS구조를 갖는 반도체소자에 있어서의 게이트산화막의 형성은 로(Furnace)내에 O2를 흘려 주어 열산화막시키거나 O2에 약간 H2또는 H2O를 첨가하여 산화막을 형성하는 방법이 주로 사용되어 왔다.In the formation of a gate oxide film in a semiconductor device having a conventional MOS structure, a method of forming an oxide film by flowing a thermal oxide film by flowing O 2 in a furnace or by adding H 2 or H 2 O slightly to O 2 is usually performed. Has been used.
또한 급속열처리(Rapid Thermal Process)장치 또는 로(Furnace)를 사용하여 950℃∼1200℃의 온도범위내에서 N2O만을 이용하여 산화막을 형성하는 방법도 시도되었다.In addition, a method of forming an oxide film using only N 2 O within a temperature range of 950 ° C. to 1200 ° C. using a rapid thermal process apparatus or a furnace has been attempted.
상기 종래의 방법에 있어서, 약 800℃∼950℃의 온도범위에서 로내에 O2와 촉매제로서 H2및 H2O를 함께 흘려주면서 약 20분동안 산화시키면 80Å∼100Å두께의 산화막이 형성된다.In the conventional method, while flowing the H 2 and H 2 O with a O 2 and the catalyst in a temperature range of about 800 ℃ ~950 ℃ when oxidized for about 20 minutes is formed in the oxide film thickness of 80Å~100Å.
또한, N2O가스를 이용한 산화막의 제조는 급속열처리장치를 이용할 경우에는 1050℃∼1200℃에서 20초∼60초동안 N2O가스를 사용하여 산화막을 성장시키면 80Å∼100Å두께의 산화막이 형성된다.In addition, when using a heat treatment apparatus for rapid manufacturing an oxide film using a N 2 O gas, for 20-60 seconds at 1050 ℃ ~1200 ℃ using N 2 O gas when growing the oxide film on the oxide film is formed of thickness 80Å~100Å do.
한편, 로를 이용하여 N2O가스에 의해 산화막을 형성할 경우에는 제1도에 도시된 바와 같이 N2가스를 흘리면서 온도를 로대기상태(Stand-by)온도인 800℃에서 산화막형성온도인 950℃로 올린 다음 반응가스인 N2O를 흘리면서 90분이상 열처리를 행하면 80Å∼100Å두께의 옥시나이트라이드(Oxynitride)가 형성된다. 이후 다시 N2가스를 흘리면서 온도를 로 대기상태로 하강시킨 다음 반도체웨이퍼를 꺼낸다.On the other hand, when the oxide film is formed by the N 2 O gas using a furnace, as shown in FIG. 1, the temperature of the oxide film is formed at 800 ° C., which is a stand-by temperature while flowing the N 2 gas. When heated to 950 ° C. and heat treated for 90 minutes or more while flowing a reaction gas of N 2 O, oxynitride having a thickness of 80 kPa to 100 kPa is formed. After flowing N 2 gas again, the temperature is lowered to the standby state and the semiconductor wafer is removed.
상기한 종래의 산화막형성방법들중 O2를 이용하여 형성된 산화막은 PMOS에 있어서의 보론의 투과에 취약한 단점이 있으며, 급속열처리장치를 이용하여 N2O에 의해 산화막을 형성하는 방법은 재현성(Reproductibility) 및 두께의 균일성(Uniformity)이 떨어지는 단점이 있으며, 로를 이용하여 N2O에 의해 산화막을 형성하는 방법은 상기 급속열처리장치의 단점은 개선할 수 있으나 반응성저하에 따라 공정시간이 길어지므로 전체 소자가 열화되는 문제가 있다.Among the conventional oxide film forming methods described above, the oxide film formed by using O 2 has a disadvantage in that it is vulnerable to permeation of boron in PMOS, and the method of forming an oxide film by N 2 O using a rapid heat treatment apparatus is reproducible. ) And the uniformity of the thickness (Uniformity) is inferior, the method of forming an oxide film by N 2 O using a furnace can improve the disadvantages of the rapid heat treatment apparatus, but the process time is longer due to the reactivity decreases There is a problem that the entire device is deteriorated.
본 발명은 상기한 문제점들을 해결하기 위한 것으로, 단시간에 고품질의 게이트산화막을 형성하는 방법을 제공하는 것을 그 목적으로 한다.The present invention has been made to solve the above problems, and an object thereof is to provide a method for forming a high quality gate oxide film in a short time.
상기 목적을 달성하기 위해 본발명에 의한 반도체소자의 게이트절연막 형성방법은 로(Furnace)내에 N2O가스와 성장촉매가스를 함께 흘려주어 산화막을 성장시키는 것을 특징으로 한다.In order to achieve the above object, a method of forming a gate insulating film of a semiconductor device according to the present invention is characterized in that an oxide film is grown by flowing N 2 O gas and a growth catalyst gas together in a furnace.
상기 성장촉매가스로는 O2를 사용하거나 O2와 H2를 함께 사용하거나 또는 H2O를 사용한다.As the growth catalyst gas, O 2 is used, O 2 and H 2 are used together, or H 2 O is used.
본 발명은 수평 또는 수직의 로(Furnace)내에 공정진행온도보다 약간 낮은 온도에서 N2가스를 흘려주는 로대기상태(Stand-by) 조건에서 반도체웨이퍼를 장입한 후 온도를 공정진행온도로 올림과 동시에 N2의 공급을 중단하고 N2O가스와 함께 성장촉매가스로서 소량의 O2가스를 공정진행온도로 온도를 올리는 동안과 공정이 진행되는 동안 계속 흘려주어 일정 두께의 산화막을 성장시킨 후, N2O가스 및 O2가스의 공급을 중단하고 다시 N2가스를 수분간 흘러주고 이 상태에서 로 대기상태온도로 내린다음 산화막이 형성된 반도체웨이퍼를 꺼내는 순서로 구성된다.In the present invention, the semiconductor wafer is charged in a stand-by condition in which N 2 gas is flowed at a temperature slightly lower than the process temperature in a horizontal or vertical furnace, and then the temperature is raised to the process temperature. At the same time, the supply of N 2 was stopped and a small amount of O 2 gas was grown as a growth catalyst gas along with N 2 O gas to the process progress temperature and continuously flowed during the process to grow an oxide film having a certain thickness. It stops supplying N 2 O gas and O 2 gas, flows N 2 gas again for several minutes, lowers the temperature to atmospheric temperature in this state, and takes out the semiconductor wafer on which the oxide film is formed.
이와 같이 제조된 산화막은 로의 우수한 온도제어성에 따라 두께의 균일성이 우수하고 또한 재현성이 향상되며 N2O와 함께 소량의 O2를 함께 흘려 주므로 공정시간도 단축되어 전체소자제조공정의 열처리증가에 따른 영향이 감소되며, 주반응가스인 N2O에 의해 N2O산화막이 갖는 게이트산화막 신뢰성 향상과 함께 보론투과 억제효과도 얻을 수 있다.The oxide film thus prepared has excellent thickness uniformity and reproducibility according to the excellent temperature controllability of the furnace, and a small amount of O 2 flows together with N 2 O, which shortens the process time and increases the heat treatment of the entire device manufacturing process. The effect is reduced, and the main reaction gas, N 2 O, improves the reliability of the gate oxide film of the N 2 O oxide film, and can also obtain a boron permeation inhibitory effect.
이하, 본 발명의 일실시예를 도면을 참조하여 설명한다.Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
제2도는 본 발명의 일실시예에 따른 공정진행과정을 나타낸 것이다.2 shows a process progression according to an embodiment of the present invention.
먼저 800℃의 로 대기상태에서 반도체웨이퍼를 로내에 장입하고 15SLM의 N2가스를 10분간 흘려준 후(a) 온도를 10℃/min의 속도로 올림과 동시에 곧 N2가스의 공급을 중단시킨다(b). 이어서 10SLM의 N2O가스와 0.2SLM의 O1典 10분간 함께 흘리면서 950℃까지 온도를 올린 후(c), 계속해서 약 25분간 흘려주어 80Å두께의 산화막을 성장시킨다(d).First, the semiconductor wafer is charged into the furnace in a furnace at 800 ° C, and 15SLM of N 2 gas is flowed for 10 minutes (a) The temperature is raised to 10 ° C / min and the supply of N 2 gas is immediately stopped. (b). Subsequently, the temperature was raised to 950 ° C. while flowing 10 SLM of N 2 O gas and 0.2 SLM of O 1典 for 10 minutes (c), followed by flowing for about 25 minutes to grow an oxide film having a thickness of 80 Å (d).
80Å두께의 산화막을 형성한 후, N2O가스와 O2가스의 공급을 중단하고 다시 N2가스를 10분간 흘려준 다음(e), 계속해서 N2를 흘리면서 로 대기상태온도인 800℃까지 10℃/min의 속도로 온도를 내린다(f). 계속해서 N2를 흘려주면서 로 대기상태에서 반도체웨이퍼를 꺼낸다(g).After forming an oxide film of 80Å thickness, supply of N 2 O gas and O 2 gas was stopped, and N 2 gas was flowed again for 10 minutes (e), and then N 2 was continuously flowed to a furnace atmospheric temperature of 800 ° C. Lower the temperature at a rate of 10 ° C./min (f). The semiconductor wafer is removed from the furnace at atmospheric state while flowing N 2 (g).
상기와 같이 제조된 본 발명의 실시예에 의한 게이트산화막은 두께의 균일성이 1%이내로 급속열처리장치에 의해 형성된 산화막의 경우인 10%이상에 비해 현저한 개선효과가 있으며, 보론의 투과억제효과 또한 우수하다. 또한, 게이트산화막의 불량율도 약 50%정도 감소시킬 수 있으며, 공정시간도 종래의 로를 이용한 N2O산화막의 형성공정에 비해 1/3정도 감소시킬 수 있다.The gate oxide film according to the embodiment of the present invention prepared as described above has a remarkable improvement effect compared to 10% or more, which is the case of the oxide film formed by the rapid heat treatment apparatus with a uniformity of the thickness within 1%, and also has a permeation inhibition effect of boron. great. In addition, the defective rate of the gate oxide film can be reduced by about 50%, and the process time can be reduced by about one third as compared to the process of forming the N 2 O oxide film using a conventional furnace.
상기와 같은 본 발명에 의한 게이트산화막의 특성을 다음 표1에 종래의 O2가스를 이용하여 형성한 산화막 및 N2O가스만을 이용하여 형성한 산화막과 비교하여 나타내었다.The characteristics of the gate oxide film according to the present invention as described above are shown in Table 1 in comparison with the oxide film formed using the conventional O 2 gas and the oxide film formed using only the N 2 O gas.
[표 1]TABLE 1
이상 상술한 바와 같이 본 발명에 의하면, 단시간내에 신뢰성 높은 고품질의 게이트산화막의 제조가 가능하다.As described above, according to the present invention, it is possible to manufacture a high quality gate oxide film with high reliability in a short time.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920017190A KR950009937B1 (en) | 1992-09-21 | 1992-09-21 | Gate insulate film forming method of semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920017190A KR950009937B1 (en) | 1992-09-21 | 1992-09-21 | Gate insulate film forming method of semiconductor device |
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| Publication Number | Publication Date |
|---|---|
| KR940008013A KR940008013A (en) | 1994-04-28 |
| KR950009937B1 true KR950009937B1 (en) | 1995-09-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019920017190A KR950009937B1 (en) | 1992-09-21 | 1992-09-21 | Gate insulate film forming method of semiconductor device |
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- 1992-09-21 KR KR1019920017190A patent/KR950009937B1/en not_active IP Right Cessation
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| KR940008013A (en) | 1994-04-28 |
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