KR100343452B1 - Manufacturing method for dielectric film in semiconductor device - Google Patents
Manufacturing method for dielectric film in semiconductor device Download PDFInfo
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- KR100343452B1 KR100343452B1 KR1019990046864A KR19990046864A KR100343452B1 KR 100343452 B1 KR100343452 B1 KR 100343452B1 KR 1019990046864 A KR1019990046864 A KR 1019990046864A KR 19990046864 A KR19990046864 A KR 19990046864A KR 100343452 B1 KR100343452 B1 KR 100343452B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 230000008021 deposition Effects 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 abstract description 15
- 239000000758 substrate Substances 0.000 abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- 239000001301 oxygen Substances 0.000 abstract description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 229910021529 ammonia Inorganic materials 0.000 abstract description 2
- 238000002425 crystallisation Methods 0.000 abstract description 2
- 230000008025 crystallization Effects 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000006722 reduction reaction Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- -1 and accordingly Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
Abstract
본 발명은 반도체 장치의 유전막 제조방법에 관한 것으로, 종래 반도체 장치의 유전막 제조방법은 산소분위기에서 Ta2O5막을 열처리하여 그 Ta2O5막과 Ta2O5막의 하지층 사이에 산화막이 형성되어 Ta2O5막의 유전률을 저하시키는 문제점이 있었다. 이와 같은 문제점을 감안한 본 발명은 실리콘 기판 또는 다결정실리콘의 상부에 Ta2O5막을 증착하는 유전막증착단계와; 상기 증착된 Ta2O5막을 NH3가스의 분위기에서 열처리하여 그 Ta2O5막과 실리콘 기판 또는 다결정실리콘의 사이영역에 산화막이 형성되는 것을 방지하며, Ta2O5막에 포함된 불순물을 제거함과 아울러 1차적으로 결정화하는 1차열처리단계와; 상기 1차열처리단계를 거친 Ta2O5막을 다시 O2또는 N2O가스를 이용하여 열처리하여 그 Ta2O5막을 완전히 결정화하는 2차열처리단계로 구성되어 암모니아를 사용하는 환원반응에 의해 Ta2O5막과 그 하지층 사이의 계면에서 산화막이 형성되는 것을 억제하여, Ta2O5막의 유전율이 저하되는 것을 방지하는 효과가 있다.The present invention relates to a dielectric manufacturing method of a semiconductor device, the conventional dielectric film manufacturing method of the semiconductor device is formed in the oxide layer between the heat-treating 5 film Ta 2 O in an oxygen atmosphere that Ta 2 O 5 film and the Ta 2 O 5 film underlayer This lowers the dielectric constant of the Ta 2 O 5 film. In view of the above problems, the present invention provides a dielectric film deposition step of depositing a Ta 2 O 5 film on top of a silicon substrate or polycrystalline silicon; The deposited Ta 2 O 5 film is heat-treated in an atmosphere of NH 3 gas to prevent an oxide film from being formed between the Ta 2 O 5 film and a silicon substrate or polycrystalline silicon, and to remove impurities contained in the Ta 2 O 5 film. A primary heat treatment step of removing and primary crystallization; The Ta 2 O 5 film, which has undergone the first heat treatment step, is heat-treated again using O 2 or N 2 O gas to completely crystallize the Ta 2 O 5 film, thereby reducing the Ta 2 O 5 film by a reduction reaction using ammonia. The formation of an oxide film at the interface between the 20 O 5 film and the underlying layer is suppressed, and the dielectric constant of the Ta 2 O 5 film is prevented from decreasing.
Description
본 발명은 반도체 장치의 유전막 제조방법에 관한 것으로, 특히 Ta2O5유전막을 형성한 후 암모니아 가스를 사용하는 환원분위기에서 급속열처리하여 상기 유전막과 기판의 사이에 산화막이 형성되는 것을 방지하는데 적당하도록 한 반도체 장치의 유전막 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a dielectric film of a semiconductor device, and in particular, to form a Ta 2 O 5 dielectric film and then rapidly heat-treat it in a reducing atmosphere using ammonia gas to prevent an oxide film from being formed between the dielectric film and the substrate. A method for manufacturing a dielectric film of a semiconductor device.
일반적으로, 반도체 장치의 집적도가 심화되면서, 좁은 면적을 차지하면서도 고유전율을 갖는 Ta2O5막이 사용되고 있으며, 이는 반도체 장치에서 유전막을 필요로 하는 영역 예를 들어 게이트산화막이나 커패시터의 유전막 등으로 사용되고 있으며, 종래 산화막에 비해 좁은 면적을 차지하면서도 우수한 특성을 얻을 수 있다. 그러나, 기판 또는 다결정실리콘의 상부에 Ta2O5막을 증착하고, 어닐링하는 과정에서, 상기 기판 또는 다결정실리콘과 Ta2O5막의 계면에 산화막이 형성되어 특성을 저하시키게 되며, 이와 같은 종래 반도체 장치의 유전막 제조방법을 첨부한 도면을 참조하여 상세히 설명하면 다음과 같다.In general, as the degree of integration of semiconductor devices increases, a Ta 2 O 5 film having a high dielectric constant while occupying a small area is used, which is used as a region requiring a dielectric film, for example, a gate oxide film or a dielectric film of a capacitor. In addition, it can obtain excellent characteristics while occupying a narrow area compared to the conventional oxide film. However, in the process of depositing and annealing a Ta 2 O 5 film on the substrate or polycrystalline silicon, an oxide film is formed at the interface between the substrate or the polycrystalline silicon and the Ta 2 O 5 film to deteriorate characteristics. Referring to the accompanying drawings, the dielectric film manufacturing method of as follows.
도1a 및 도1b는 종래 반도체 장치의 유전막 제조공정 수순단면도로서, 이에 도시한 바와 같이 기판(1)의 상부에 Ta2O5막(2)을 증착하는 단계(도1a)와; 상기 증착된 Ta2O5막(2)을 O2또는 N2O 가스 분위기에서 급속열처리하여 활성화하는단계(도1b)로 구성된다.1A and 1B are cross-sectional views of a process for manufacturing a dielectric film of a conventional semiconductor device, including depositing a Ta 2 O 5 film 2 on top of a substrate 1 (Fig. 1A); The deposited Ta 2 O 5 film 2 is activated by rapid heat treatment in an O 2 or N 2 O gas atmosphere (FIG. 1B).
이하, 상기와 같이 구성된 종래 반도체 장치의 유전막 제조방법을 좀 더 상세히 설명한다.Hereinafter, a method of manufacturing a dielectric film of a conventional semiconductor device configured as described above will be described in more detail.
먼저, 도1a에 도시한 바와 같이 기판(1)의 상부에 유기금속증착법(이하, MOCVD)을 사용하여 약 100nm의 두께를 갖는 Ta2O5막(2)을 증착한다.First, as shown in FIG. 1A, a Ta 2 O 5 film 2 having a thickness of about 100 nm is deposited on the substrate 1 by using an organometallic deposition method (hereinafter referred to as MOCVD).
이와 같이 증착한 Ta2O5막(2)에는 일반적으로 Ta2O5막(2) 내에 탄소 등의 불순물이 존재하며 열처리하지 않은 Ta2O5막은 무결정형으로서 유전상수가 25이며, 누설전류가 매우높다.The Ta 2 O 5 film 2 is deposited, as is usually a Ta 2 O 5 film (2), impurities such as carbon present and non-heat-treated Ta 2 O 5 film in the integrity shaping and a dielectric constant of 25, the leakage current Is very high.
그 다음, 도1b에 도시한 바와 같이 Ta2O5막(2)의 문제점인 누설전류발생문제와 함유된 불순물을 제거하기 위해 약 800℃의 온도조건에서 O2또는 N2O가스를 사용하는 급속열처리공정으로 5분간 열처리하여 상기 Ta2O5막(2)을 산화시켜 결정화함으로써, 그 Ta2O5막(2) 내의 불순물을 제거함과 아울러 누설전류를 방지하게 된다.Next, as shown in FIG. 1B, O 2 or N 2 O gas is used at a temperature of about 800 ° C. to remove impurities and leakage current generation problems, which are problems of the Ta 2 O 5 film 2. The Ta 2 O 5 film 2 is oxidized and crystallized by heat treatment for 5 minutes in a rapid heat treatment step to remove impurities in the Ta 2 O 5 film 2 and to prevent leakage current.
그러나, 상기의 공정조건으로 열처리하는 중에 그 열처리에 사용되는 가스가 모두 산소를 포함하고 있으며, 이에 따라 Ta2O5막(2) 보다 유전상수가 낮은 SiO2가 약 3nm정도 상기 기판(1)과 Ta2O5막(2)의 사이에 형성된다.However, during the heat treatment under the above process conditions, all of the gases used for the heat treatment contain oxygen, and accordingly, SiO 2 having a dielectric constant lower than that of the Ta 2 O 5 film 2 is about 3 nm. And between the Ta 2 O 5 film 2.
이와 같이 산화막이 형성되는 경우 유전률이 저하되어 그 유전막을 사용하는 반도체 장치의 특성이 열화된다.When the oxide film is formed in this manner, the dielectric constant is lowered and the characteristics of the semiconductor device using the dielectric film are deteriorated.
상기한 바와 같이 종래 반도체 장치의 유전막 제조방법은 Ta2O5막을 증착하고, 산소가 포함된 가스를 이용하여 급속열처리공정을 수행하여 Ta2O5막과 하지층의 사이에 산화막이 형성되어 실질적으로 유전률을 저하시켜 반도체 장치의 특성을 열화시키는 문제점이 있었다.As described above, in the method of manufacturing a dielectric film of a conventional semiconductor device, a Ta 2 O 5 film is deposited and an oxide film is formed between the Ta 2 O 5 film and the underlying layer by performing a rapid heat treatment process using a gas containing oxygen. As a result, there is a problem of lowering the dielectric constant and deteriorating characteristics of the semiconductor device.
이와 같은 문제점을 감안한 본 발명은 Ta2O5막과 하지층의 사이에 산화막을 형성하지 않고 Ta2O5막의 불순물을 제거함과 아울러 누설전류의 발생을 방지할 수 있는 반도체 장치의 유전막 제조방법을 제공함에 그 목적이 있다.In view of the above problems, the present invention provides a method for manufacturing a dielectric film of a semiconductor device capable of removing impurities from a Ta 2 O 5 film and preventing generation of leakage current without forming an oxide film between the Ta 2 O 5 film and the underlying layer. The purpose is to provide.
도1a 및 도1b는 종래 반도체 장치의 유전막 제조공정 수순단면도.1A and 1B are cross-sectional views of a dielectric film manufacturing process of a conventional semiconductor device.
도2a 내지 도2c는 본 발명 반도체 장치의 유전막 제조공정 수순단면도.2A to 2C are cross-sectional views of a dielectric film manufacturing process of the semiconductor device of the present invention.
도3은 산소분위기에서 열처리한 Ta2O5막과 암모니아 분위기에서 열처리한 Ta2O5막의 경도 비교 그래프도.Figure 3 is a graph of the hardness comparison of Ta 2 O 5 membrane heat-treated in an oxygen atmosphere and Ta 2 O 5 membrane heat-treated in an ammonia atmosphere.
***도면의 주요 부분에 대한 부호의 설명****** Description of the symbols for the main parts of the drawings ***
1:기판 2:Ta2O5막1: Substrate 2: Ta 2 O 5 membrane
상기와 같은 목적은 실리콘 기판 또는 다결정실리콘의 상부에 Ta2O5막을 증착하는 유전막증착단계와; 상기 증착된 Ta2O5막을 NH3가스의 분위기에서 열처리하여 그 Ta2O5막과 실리콘 기판 또는 다결정실리콘의 사이영역에 산화막이 형성되는 것을 방지하며, Ta2O5막에 포함된 불순물을 제거함과 아울러 1차적으로 결정화하는 1차열처리단계와; 상기 1차열처리단계를 거친 Ta2O5막을 다시 O2또는 N2O가스를 이용하여 열처리하여 그 Ta2O5막을 완전히 결정화하는 2차열처리단계로 구성함으로써 달성되는 것으로, 이와 같은 본 발명을 첨부한 도면을 참조하여 상세히 설명하면 다음과 같다.The above object is a dielectric film deposition step of depositing a Ta 2 O 5 film on top of a silicon substrate or polycrystalline silicon; The deposited Ta 2 O 5 film is heat-treated in an atmosphere of NH 3 gas to prevent an oxide film from being formed between the Ta 2 O 5 film and a silicon substrate or polycrystalline silicon, and to remove impurities contained in the Ta 2 O 5 film. A primary heat treatment step of removing and primary crystallization; The Ta 2 O 5 film, which has undergone the first heat treatment step, is heat-treated again using O 2 or N 2 O gas, and the second heat treatment step is performed to completely crystallize the Ta 2 O 5 film. When described in detail with reference to the accompanying drawings as follows.
도2a 내지 도2c는 본 발명 반도체 장치의 유전막 제조공정 수순단면도로서,이에 도시한 바와 같이 기판(1)의 상부에 Ta2O5막(2)을 증착하는 단계(도2a)와; 상기 증착된 Ta2O5막(2)을 NH3가스로 환원분위기에서 급속열처리하는 단계(도2b)와; 상기 1차 급속열처리가 끝난 Ta2O5막(2)을 다시 O2또는 N2O가스를 사용하는 급속열처리를 통해 상기 Ta2O5막(2)을 결정화하는 단계(도2c)로 구성된다.2A to 2C are cross-sectional views of a process for producing a dielectric film of a semiconductor device according to the present invention, as shown in the following steps: depositing a Ta 2 O 5 film 2 on the substrate 1 (FIG. 2A); Rapid thermal treatment of the deposited Ta 2 O 5 film (2) with NH 3 gas in a reducing atmosphere (FIG. 2b); Consists of a step (Fig. 2c) of crystallizing the Ta 2 O 5 film (2) to the first Ta 2 O 5 film (2) heat treatment is complete quickly through the rapid thermal annealing using an O 2 or N 2 O gas again do.
이하, 상기와 같이 구성된 본 발명 반도체 장치의 유전막 제조방법을 좀 더 상세히 설명한다.Hereinafter, a method of manufacturing the dielectric film of the semiconductor device of the present invention configured as described above will be described in more detail.
먼저, 도2a에 도시한 바와 같이 기판(1)의 상부에 Ta2O5막(2)을 증착한다.First, as shown in FIG. 2A, a Ta 2 O 5 film 2 is deposited on top of the substrate 1.
그 다음, 도2b에 도시한 바와 같이 상기 증착된 Ta2O5막(2)을 NH3가스를 이용하여, 약 800℃의 온도분위기에서 3 내지 5분동안 열처리를 실시한다. 이때, NH3의 유량은 50~100sccm으로 한다.Then, as shown in FIG. 2B, the deposited Ta 2 O 5 film 2 is subjected to heat treatment for 3 to 5 minutes at a temperature atmosphere of about 800 ° C. using NH 3 gas. At this time, the flow rate of NH 3 is set to 50 to 100 sccm.
이때, 사용하는 NH3가스에 의해 상기 Ta2O5막(2)과 기판(1)의 사이에 산화막이 형성되지 않으며, 상기 Ta2O5막(2)의 산소에 의해 상기 기판(1)과 Ta2O5막(2)의 사이에는 1.5nm이하의 산화막이 형성되며, 이는 다시 상기 NH3가스와 Ta2O5막(2)의 반응에 의해 환원되어 그 형성된 산화막은 그 두께가 무시될 만큼 얇아지게 된다.At this time, an oxide film is not formed between the Ta 2 O 5 film 2 and the substrate 1 by the NH 3 gas used, and the substrate 1 is formed by oxygen of the Ta 2 O 5 film 2. and Ta 2 O 5 between the film 2, the oxide film is 1.5nm or less is formed, it is reduced again by the reaction of the NH 3 gas and a Ta 2 O 5 film (2) the formed oxide film has a thickness ignore Thinner enough.
이와 같이 NH3의 분위기에서 열처리한 것과 산소분위기에서 열처리한 Ta2O5막(2)의 강도를 X-ray 회절기를 이용하여 측정한 그래프도를 도3에 나타내었다.상기 도면에서 알 수 있듯이, NH3분위기에서 열처리한 Ta2O6막(2)은 그 강도가 증가하게 되며, 그 강도의 증가는 결정화가 이루어지기 때문이다.이때 결정화가 이루어진 Ta2O5막(2)은 결정화되지 않은 Ta2O6막에 비하여 그 유전율이 높아지게 된다.상기 도3의 X축으로의 단위는 X-ray 회절기의 회절각이며, 그 회절각에 대한 측정결과로 각 방향성(001),(100),(101)에 대한 강도를 측정할 수 있다.Fig. 3 shows a graph of the intensity of the Ta 2 O 5 film 2 heat-treated in the atmosphere of NH 3 and heat treated in an oxygen atmosphere using an X-ray diffractometer. , The Ta 2 O 6 film (2) heat-treated in the NH 3 atmosphere is increased in strength, because the increase in strength is crystallized. At this time, the Ta 2 O 5 film (2) is crystallized is not crystallized The dielectric constant of the Ta 2 O 6 film is higher than that of the non-Ta 2 O 6 film. The unit on the X axis of FIG. 3 is the diffraction angle of the X-ray diffractometer. ), The strengths for 101 can be measured.
그 다음, 도2c에 도시한 바와 같이 상기 NH3의 분위기에서 1차적으로 열처리된 Ta2O5막(2)을 결정화하기 위해 종래와 동일한 조건인 O2또는 N2O가스분위기, 800℃의 온도분위기에서 약 1 내지 3분간 열처리한다.Then, as shown in FIG. 2C, the O 2 or N 2 O gas atmosphere at 800 ° C., which is the same as in the prior art, to crystallize the Ta 2 O 5 film 2 heat-treated primarily in the NH 3 atmosphere. Heat treatment for about 1 to 3 minutes in a temperature atmosphere.
이와 같이 산소가 포함된 가스를 사용하여 상기 Ta2O5막(2)을 산화시킴으로써, 결정화하여 누설전류의 발생을 억제한다. 이때 역시 상기 Ta2O5막(2)과 기판(1)의 사이에 산화막이 성장하게 되나, 열처리 시간이 상대적으로 짧아 1.5nm이하의 두께를 갖는 산화막이 형성되어 Ta2O5막(2)의 유전율 저하를 최소화 할 수 있다.In this way, the Ta 2 O 5 film 2 is oxidized using a gas containing oxygen to crystallize and suppress the occurrence of leakage current. At this time, an oxide film is also grown between the Ta 2 O 5 film 2 and the substrate 1, but an oxide film having a thickness of 1.5 nm or less is formed because the heat treatment time is relatively short, so that the Ta 2 O 5 film 2 is formed. The dielectric constant decrease can be minimized.
상기한 바와 같이 본 발명은 Ta2O5막을 증착하고, 암모니아가스를 사용하여 1차적인 열처리를 수행하여, 상기 Ta2O5막의 불순물을 제거함과 아울러 1차적으로 결정화하고, 다시 산소분위기에서 2차 열처리를 실시하여 상기 Ta2O5막을 완전히 결정화함으로써, Ta2O5막과 그 하지층 사이에 산화막이 형성되는 것을 최대한 억제하고, 이에 따른 Ta2O5막의 유전률 저하를 방지하여 반도체 장치의 특성이 열화되는 것을 방지하는 효과가 있다.As described above, the present invention deposits a Ta 2 O 5 film and performs a first heat treatment using ammonia gas to remove impurities from the Ta 2 O 5 film and to crystallize it first. and to the primary heat treatment carried out by completely crystallize the Ta 2 O 5 film, and significantly suppressed in that an oxide film is formed between the Ta 2 O 5 film and the base layer and to prevent this Ta 2 O 5 film, the dielectric constant deterioration of the semiconductor device There is an effect of preventing the deterioration of properties.
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| US7679124B2 (en) | 2004-07-28 | 2010-03-16 | Samsung Electronics Co., Ltd. | Analog capacitor and method of manufacturing the same |
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