KR940016471A - Field stop ion implantation method - Google Patents

Field stop ion implantation method Download PDF

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Publication number
KR940016471A
KR940016471A KR1019920026891A KR920026891A KR940016471A KR 940016471 A KR940016471 A KR 940016471A KR 1019920026891 A KR1019920026891 A KR 1019920026891A KR 920026891 A KR920026891 A KR 920026891A KR 940016471 A KR940016471 A KR 940016471A
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KR
South Korea
Prior art keywords
film
ion implantation
field stop
oxide film
forming
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KR1019920026891A
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Korean (ko)
Inventor
황준
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019920026891A priority Critical patent/KR940016471A/en
Publication of KR940016471A publication Critical patent/KR940016471A/en

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  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

본 발명은 반도체 기판(1)상에 차례로 패드 산화막(4)과 질화막(5)를 증착하여 감광막(6)으로 필드산화막(8) 영역을 패턴하여 상기 감광막(6)에 의해 노출된 상기 질화막(5)을 식각하는 제 1 단계와, P웰 형성용 마스크인 감광막(7)을 도포하여 일정 패턴을 형성하여 P웰 이온 주입을한 후에 N채널 필드 스톱 불순물 이온을 주입하는 제 2 단계, 상기 노출되어 있는 상기 산화막(4)에 필드산화막(8)을 형성하여 상기 질화막(5)과 산화막 및 감광막을 제거하는 제 3 단계를 포함하여 이루어져 종래의 방법에 비해 포토마스크 공정 하나를 줄일 수 있는 필드 스톱 이온 주입 방법에 관한 것이다.According to the present invention, the pad oxide film 4 and the nitride film 5 are sequentially deposited on the semiconductor substrate 1 to pattern the field oxide film 8 region with the photosensitive film 6 to expose the nitride film (exposed by the photosensitive film 6). 5) a second step of etching, and a second step of implanting the N-channel field stop impurity ions after the P-well ion implantation by forming a predetermined pattern by applying a photosensitive film 7, which is a P well forming mask And a third step of removing the nitride film 5, the oxide film, and the photosensitive film by forming a field oxide film 8 on the oxide film 4, which is a field stop capable of reducing one photomask process compared to the conventional method. It relates to an ion implantation method.

Description

필드 스톱 이온 주입 방법Field stop ion implantation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2 도는 본 발명에 따른 N채널 필드 스톱 이온 주입에 의한 P웰 제조 공정도.2 is a P well manufacturing process diagram by N-channel field stop ion implantation according to the present invention.

Claims (4)

필드 스톱 이온 주입 방법에 있어서, 반도체 기판(1)상에 차례로 패드 산화막(4)과 질화막(5)를 증착하여 감광막(6)으로 필드산화막(8) 영역을 패턴하여 상기 감광막(6)에 의해 노출된 상기 질화막(5)를 식각하는 제 1 단계와, P웰 형성용 마스크인 감광막(7)을 도포하여 일정 패턴을 형성하여 P웰 이온 주입을 한후에 N채널 필드 스톱 불순물 이온을 주입하는 제 2 단계, 상기 노출되어 있는 상기 산화막(4)에 필드산화막(8)을 형성하여 상기 질화막(5)과 산화막 및 감광막을 제거하는 제 3 단계를 포함하여 이루어지는 것을 특징으로 하는 필드 스톱 이온 주입 방법.In the field stop ion implantation method, the pad oxide film 4 and the nitride film 5 are sequentially deposited on the semiconductor substrate 1 to pattern the field oxide film 8 region with the photosensitive film 6 by the photosensitive film 6. A first step of etching the exposed nitride film 5 and a second pattern of implanting P-channel ion stop implantation after forming a predetermined pattern by applying a photoresist film 7, which is a P well forming mask, to implant P wells And a third step of forming a field oxide film (8) in the exposed oxide film (4) to remove the nitride film (5), the oxide film, and the photosensitive film. 제 1 항에 있어서, 상기 제 2 단계는 N웰 형성용 마스크인 감광막(7)을 도포하여 일정 패턴을 형성하여 N웰 이온 주입을 한 후에 P채널 필드 스톱 불순물 이온을 주입하는 단계인 것을 특징으로 하는 필드 스톱 이온 주입 방법.2. The method of claim 1, wherein the second step is a step of implanting P-channel field stop impurity ions after coating a photoresist film 7, which is an N well forming mask, to form a predetermined pattern to perform N well ion implantation. Field stop ion implantation method. 제 1 항에 있어서, 상기 제 2 단계의 P웰 형성용 이온은 상기 질화막(5)을 뚫고 반도체기판(1)에 주입되어지는 것을 특징으로 하는 필드 스톱 이온 주입 방법.The field stop ion implantation method according to claim 1, wherein the ions for forming P wells in the second step are implanted into the semiconductor substrate (1) through the nitride film (5). 제 1 항에 있어서, 상기 제 2 단계의 N채널 필드 스톱 불순물 이온 주입 에너지는 상기 질화막(5)을 뚫지 못하는 에너지인 것을 특징으로 하는 필드 스톱 이온 주입 방법.The field stop ion implantation method according to claim 1, wherein the N-channel field stop impurity ion implantation energy of the second step is energy that cannot penetrate the nitride film (5). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920026891A 1992-12-30 1992-12-30 Field stop ion implantation method KR940016471A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920026891A KR940016471A (en) 1992-12-30 1992-12-30 Field stop ion implantation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920026891A KR940016471A (en) 1992-12-30 1992-12-30 Field stop ion implantation method

Publications (1)

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KR940016471A true KR940016471A (en) 1994-07-23

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Application Number Title Priority Date Filing Date
KR1019920026891A KR940016471A (en) 1992-12-30 1992-12-30 Field stop ion implantation method

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