KR940016471A - Field stop ion implantation method - Google Patents
Field stop ion implantation method Download PDFInfo
- Publication number
- KR940016471A KR940016471A KR1019920026891A KR920026891A KR940016471A KR 940016471 A KR940016471 A KR 940016471A KR 1019920026891 A KR1019920026891 A KR 1019920026891A KR 920026891 A KR920026891 A KR 920026891A KR 940016471 A KR940016471 A KR 940016471A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- ion implantation
- field stop
- oxide film
- forming
- Prior art date
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- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
본 발명은 반도체 기판(1)상에 차례로 패드 산화막(4)과 질화막(5)를 증착하여 감광막(6)으로 필드산화막(8) 영역을 패턴하여 상기 감광막(6)에 의해 노출된 상기 질화막(5)을 식각하는 제 1 단계와, P웰 형성용 마스크인 감광막(7)을 도포하여 일정 패턴을 형성하여 P웰 이온 주입을한 후에 N채널 필드 스톱 불순물 이온을 주입하는 제 2 단계, 상기 노출되어 있는 상기 산화막(4)에 필드산화막(8)을 형성하여 상기 질화막(5)과 산화막 및 감광막을 제거하는 제 3 단계를 포함하여 이루어져 종래의 방법에 비해 포토마스크 공정 하나를 줄일 수 있는 필드 스톱 이온 주입 방법에 관한 것이다.According to the present invention, the pad oxide film 4 and the nitride film 5 are sequentially deposited on the semiconductor substrate 1 to pattern the field oxide film 8 region with the photosensitive film 6 to expose the nitride film (exposed by the photosensitive film 6). 5) a second step of etching, and a second step of implanting the N-channel field stop impurity ions after the P-well ion implantation by forming a predetermined pattern by applying a photosensitive film 7, which is a P well forming mask And a third step of removing the nitride film 5, the oxide film, and the photosensitive film by forming a field oxide film 8 on the oxide film 4, which is a field stop capable of reducing one photomask process compared to the conventional method. It relates to an ion implantation method.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제 2 도는 본 발명에 따른 N채널 필드 스톱 이온 주입에 의한 P웰 제조 공정도.2 is a P well manufacturing process diagram by N-channel field stop ion implantation according to the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920026891A KR940016471A (en) | 1992-12-30 | 1992-12-30 | Field stop ion implantation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920026891A KR940016471A (en) | 1992-12-30 | 1992-12-30 | Field stop ion implantation method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR940016471A true KR940016471A (en) | 1994-07-23 |
Family
ID=67215256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920026891A KR940016471A (en) | 1992-12-30 | 1992-12-30 | Field stop ion implantation method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR940016471A (en) |
-
1992
- 1992-12-30 KR KR1019920026891A patent/KR940016471A/en not_active Application Discontinuation
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