KR950027917A - Junction Formation Method for Semiconductor Devices - Google Patents
Junction Formation Method for Semiconductor Devices Download PDFInfo
- Publication number
- KR950027917A KR950027917A KR1019940004866A KR19940004866A KR950027917A KR 950027917 A KR950027917 A KR 950027917A KR 1019940004866 A KR1019940004866 A KR 1019940004866A KR 19940004866 A KR19940004866 A KR 19940004866A KR 950027917 A KR950027917 A KR 950027917A
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- KR
- South Korea
- Prior art keywords
- forming
- well
- junction
- adjacent
- present
- Prior art date
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
본 발명은 이온 주입공정을 수행하여 인접한 접합을 형성하는 반도체 소자의 접합 형성방법에 있어서, 반도체 기판(11)에 상부 전면에 이온을 주입하여 제1웰(12)을 형성하는 단계; 마스크 패턴(14)을 형성하되 상기 제1웰(12)과 다른 타입을 형성할 지역을 노출시키는 단계; 상기 제1웰(12)을 형성하기 위하여 주입한 이온과 다른 타입의 이온을 주입하여 제1웰(12)에 인접한 제2웰(13)을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 접합 형성방법에 관한 것으로, 서로 다른 이온주입 공정을 수행하는 접합 형성과정을 단순화시켜 한번의 마스크 공정을 생략할 수 있으므로 고가의 노광장비 사용 및 공정 시간을 대폭 단축할 수 있는 효과가 있다.According to an aspect of the present invention, there is provided a method of forming a junction of a semiconductor device to form an adjacent junction by performing an ion implantation process, the method comprising: forming a first well (12) by implanting ions into an upper surface of a semiconductor substrate (11); Forming a mask pattern (14) but exposing an area to form a different type from said first well (12); And forming a second well 13 adjacent to the first well 12 by implanting ions different from the implanted ions to form the first well 12. The present invention relates to a method for forming a junction of the present invention, which can simplify the process of forming a junction for performing different ion implantation processes so that a single mask process can be omitted, thereby greatly reducing the use of expensive exposure equipment and processing time.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A도 및 제2B도는 본 발명에 따른 반도체 소자의 접합 형성방법을 도시한 공정 단면도.2A and 2B are cross-sectional views showing a method for forming a junction of a semiconductor device according to the present invention.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940004866A KR950027917A (en) | 1994-03-11 | 1994-03-11 | Junction Formation Method for Semiconductor Devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940004866A KR950027917A (en) | 1994-03-11 | 1994-03-11 | Junction Formation Method for Semiconductor Devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR950027917A true KR950027917A (en) | 1995-10-18 |
Family
ID=66689684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940004866A KR950027917A (en) | 1994-03-11 | 1994-03-11 | Junction Formation Method for Semiconductor Devices |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950027917A (en) |
-
1994
- 1994-03-11 KR KR1019940004866A patent/KR950027917A/en not_active Application Discontinuation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Withdrawal due to no request for examination |