KR970006271B1 - Method for forming a storage electrode of semiconductor device - Google Patents

Method for forming a storage electrode of semiconductor device Download PDF

Info

Publication number
KR970006271B1
KR970006271B1 KR94001949A KR19940001949A KR970006271B1 KR 970006271 B1 KR970006271 B1 KR 970006271B1 KR 94001949 A KR94001949 A KR 94001949A KR 19940001949 A KR19940001949 A KR 19940001949A KR 970006271 B1 KR970006271 B1 KR 970006271B1
Authority
KR
South Korea
Prior art keywords
photoresist pattern
forming
photoresist
semiconductor device
storage electrode
Prior art date
Application number
KR94001949A
Other languages
Korean (ko)
Other versions
KR950025933A (en
Inventor
Young-Mok Ham
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR94001949A priority Critical patent/KR970006271B1/en
Publication of KR950025933A publication Critical patent/KR950025933A/en
Application granted granted Critical
Publication of KR970006271B1 publication Critical patent/KR970006271B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

A photoresist is spread on the top of a wafer, and forms a 1st photoresist pattern(9) on top of the wafer. The 1st photoresist pattern(9) hardens by the high heat processing. Then a new photoresist spreads on the top of it, and forms a 2nd photoresist pattern(1), using a 2nd storage terminal mask which is formed diagonally to the left. At this time, the photo exposure and development process is performed to from the 2nd photoresist pattern(11) using different mask from the one used for the forming the 1st photoresist pattern(9). And a storage terminal(13) is formed by etching a polycrystalline silicon layer(8) of the wafter.
KR94001949A 1994-02-03 1994-02-03 Method for forming a storage electrode of semiconductor device KR970006271B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR94001949A KR970006271B1 (en) 1994-02-03 1994-02-03 Method for forming a storage electrode of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR94001949A KR970006271B1 (en) 1994-02-03 1994-02-03 Method for forming a storage electrode of semiconductor device

Publications (2)

Publication Number Publication Date
KR950025933A KR950025933A (en) 1995-09-18
KR970006271B1 true KR970006271B1 (en) 1997-04-25

Family

ID=19376698

Family Applications (1)

Application Number Title Priority Date Filing Date
KR94001949A KR970006271B1 (en) 1994-02-03 1994-02-03 Method for forming a storage electrode of semiconductor device

Country Status (1)

Country Link
KR (1) KR970006271B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100546162B1 (en) * 2000-12-29 2006-01-24 주식회사 하이닉스반도체 Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
KR950025933A (en) 1995-09-18

Similar Documents

Publication Publication Date Title
US5885756A (en) Methods of patterning a semiconductor wafer having an active region and a peripheral region, and patterned wafers formed thereby
JP2639372B2 (en) Method for manufacturing semiconductor device
KR970006271B1 (en) Method for forming a storage electrode of semiconductor device
JPS5633827A (en) Photo etching method including surface treatment of substrate
KR100268912B1 (en) Method for etching of semiconductor device
KR100239400B1 (en) Metal pattern formation method
JPH05217959A (en) Semiconductor device and manufacture thereof
JPS5527659A (en) Method of manufacturing semiconductor device
KR100250742B1 (en) Method of forming line of semiconductor device
KR100256236B1 (en) Method of forming storage node
JPH1041309A (en) Wiring formation method of semiconductor device
JPS594018A (en) Monitor pattern
KR950027964A (en) Polysilicon Film Formation Method of Semiconductor Device
KR960009095B1 (en) Manufacturing method of semiconductor device isolation
JPS5599720A (en) Method and device of manufacturing semiconductor device
KR970052778A (en) Planarization Method in Manufacturing Semiconductor Devices
JPS57180176A (en) Manufacturing method for semiconductor device
JPS54109775A (en) Manufacture of semiconductor device
KR19980026093A (en) Method of forming fine pattern of semiconductor device
JP2000260751A (en) Manufacture of semiconductor device
KR970054409A (en) Manufacturing Method of Semiconductor Device
KR970013015A (en) How to form the ion implantation mask
TW263600B (en) Process for implementing etching
KR950034414A (en) Method of manufacturing photoresist pattern of semiconductor device
JPH11297585A (en) Manufacture of semiconductor manufacturing system

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060720

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee