JPS594018A - Monitor pattern - Google Patents
Monitor patternInfo
- Publication number
- JPS594018A JPS594018A JP11312282A JP11312282A JPS594018A JP S594018 A JPS594018 A JP S594018A JP 11312282 A JP11312282 A JP 11312282A JP 11312282 A JP11312282 A JP 11312282A JP S594018 A JPS594018 A JP S594018A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- pattern
- positive resist
- sections
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
（１）発明の技術分野
本発明はモニタパターン、特にポジティブホトレジスト
（以下ポジレジストと略称する）パターン寸法をモニ
タするためにマスクの有効領域外に形成されたパターン
に関する。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a monitor pattern, particularly a pattern formed outside the effective area of a mask to monitor the pattern dimensions of a positive photoresist (hereinafter abbreviated as positive resist).
（２）技術の背景
集積回路の高密度化を実現するために、マスクの形成に
おいて、ポジレジスト膜を塗布形成し、（１）
このレジスＩ−Ｍｕに電子ビーム（ＥＢ）でパターンを
直接ｔｌｖ１画することが行われるようにｔった。ポジ
レジストは光に照射された部分が現像において除去され
るので微細なパターン形成に適し、ＥＢによる直接描画
は光を用いる照射における微細化の限界を拡げる露光方
法である。(2) Background of the technology In order to realize high density integrated circuits, a positive resist film is applied and formed in mask formation, and (1) a pattern is directly applied to this resist I-Mu with an electron beam (EB) at tlv1. It was set so that the drawing could be done. Positive resists are suitable for forming fine patterns because the portions irradiated with light are removed during development, and direct writing by EB is an exposure method that expands the limits of miniaturization in irradiation using light.
（３）従来技術と問題点
マスク上にポジレジスト膜を塗布形成し、そのレジスト
膜を露光、現像するマスク焼付において、使用する装置
の状況、露光量、現像条件等の影響で、例えば５μｍ幅
のビームサイズでもろもろのデータに基づいて露光現像
したとして、レジスト膜の除去される部分のパターンが
５．８μｍ程度に太く形成されることが確認された。(3) Prior art and problems In mask baking, in which a positive resist film is applied and formed on a mask, and the resist film is exposed and developed, the width of the mask is, for example, 5 μm, depending on the conditions of the equipment used, the amount of exposure, the development conditions, etc. It was confirmed that when exposure and development was carried out based on various data with a beam size of , the pattern in the part of the resist film to be removed was formed as thick as about 5.8 μm.
ＥＢの照射においては、形成されるべきパターンに対応
して電流値等を設定して照射をなすが、照射開始時に適
正パターンが形成されるよう電流値等を選定するので、
照射を継続するにつれて露光量は僅かずつ減少する傾向
にある。In EB irradiation, irradiation is performed by setting the current value etc. in accordance with the pattern to be formed, but the current value etc. is selected so that an appropriate pattern is formed at the start of irradiation.
As the irradiation continues, the exposure amount tends to decrease little by little.
ポジレジストの現像において、例えば露光量（２）
多のため設定値よりも大なる幅のレジスｌ−膜が除去さ
れた場合、すなわちパターンが設定値よりも小に形成さ
れたときは、それは是正されえない。When developing a positive resist, for example, if the exposure amount (2) is too high and a resist l-film with a width larger than the set value is removed, that is, when a pattern is formed smaller than the set value, it must be corrected. It cannot be done.
しかし、露光不足によりパターンが太く形成されたとき
は、現像時間を長くすることによってパターン幅を選定
された適正値に近付けることは可能である。かくして、
ポジレジスト膜を用いるマスクの焼付においてパターン
の寸法をモニタするための手段が要望されている。However, when the pattern is formed thick due to insufficient exposure, it is possible to bring the pattern width closer to the selected appropriate value by lengthening the development time. Thus,
There is a need for a means for monitoring the dimensions of a pattern in the printing of a mask using a positive resist film.
（４）発明の目的
本発明は上記従来の問題点に鑑み、ポジレジストのパタ
ーン幅が適正値にあるか否かをモニタする手段を、マス
クの有効領域を用いることなく提供することを目的とす
る。(4) Purpose of the Invention In view of the above conventional problems, an object of the present invention is to provide a means for monitoring whether the pattern width of a positive resist is at an appropriate value without using the effective area of a mask. do.
（５）発明の構成
そしてこの目的は本発明によれば、ポジレジスト膜の形
成されたマスクの有効領域の外に複数の長方形の露光部
分を平行に、かつ、前記ポジレジストについて定められ
る値の幅で（それは通審１μｍ以下の幅である）離して
描画したモニタバ（３）
ターンを提供することによって達成される。(5) Structure and object of the invention According to the present invention, a plurality of rectangular exposed portions are formed in parallel outside the effective area of a mask on which a positive resist film is formed, and a value determined for the positive resist film is set. This is achieved by providing monitor bars (3) turns drawn apart in width (which is less than 1 μm wide).
（６）発明の実施例 以下本発明の実施例を図面によっ°ζ詳述する。(6) Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.
現在多く用いられるウェハば直径１００ｍｍのもので、
他方、かかるウェハの露光に用いられるマスクは１辺の
長さが１２７ｍｍ （５インチ）の方形のものが多い
。従って、マスクの４隅の部分は有効エリア（領域）で
ない。本発明にかかるモニタパターンばかかる領域、す
なわちマスクの有効領域外に形成する。The wafers commonly used today are those with a diameter of 100 mm.
On the other hand, the masks used for exposing such wafers are often rectangular with a side length of 127 mm (5 inches). Therefore, the four corner portions of the mask are not effective areas. The monitor pattern according to the present invention is formed in this area, that is, outside the effective area of the mask.
ポジレジスト膜の形成されたマスクのＥＢを用いるｍ画
において、前記有効領域外に、添付図面の平面図に示さ
れる如く、細長い長方形の部分１を、互いに平行に、部
分１相互の間に細い露光されない線部分２を残すよう描
画する。現像においては、露光部分１のポジレジストは
除去され、露光されない部分２のポジレジストが平行な
線になって残る。In the m drawing using EB of the mask on which the positive resist film is formed, outside the effective area, as shown in the plan view of the attached drawing, elongated rectangular portions 1 are placed parallel to each other and thin between the portions 1. Drawing is done so as to leave a line portion 2 that is not exposed. During development, the positive resist in the exposed areas 1 is removed, leaving the positive resist in the unexposed areas 2 in parallel lines.
従来の経験によると、ポジレジストのパターンの幅は、
所望の適正値より太く形成される。従（４）
って、実験によって、それぞれのポジレジストについて
パターン幅のビームの寸法から変化する値を定めておき
、図示した露光する部分の間隔（露光されない線の幅）
を前記した幅に等しく設定する。According to conventional experience, the pattern width of positive resist is
It is formed thicker than the desired appropriate value. (4) Therefore, for each positive resist, the value that changes from the beam dimension of the pattern width is determined by experiment, and the interval between the exposed parts shown in the figure (the width of the unexposed line) is determined.
is set equal to the width described above.
マスクの現像において、露光されない部分２がマスク上
に線として残っているときは、その幅だりマスクのパタ
ーンが適正値を超えていることを示すから、現像を更に
継続する。線が消滅したところで現像を止めると、マス
クのパターン幅は、適正値を超える幅だけが除去され、
適正値のものであるごとになる。When developing the mask, if the unexposed portion 2 remains as a line on the mask, this indicates that the width or pattern of the mask exceeds the appropriate value, so development is continued. If development is stopped when the lines disappear, only the mask pattern width that exceeds the appropriate value will be removed.
As long as it is of appropriate value.
操作において、図示のパターンはＥＩＪｆｆｌＨ画の一
部としζなんら特別の手段を用いることなく描画される
。マスクの現像においては、露光されない部分の線が現
れるか否かを観察し、現れた場合は現像を続け、線が消
えたときに現像を停止する。In operation, the illustrated pattern is drawn as part of the EIJfflH picture without any special means. When developing a mask, it is observed whether lines in the unexposed areas appear. If they appear, development is continued, and when the lines disappear, development is stopped.
従って、モニタパターンの形成、それを利用する現像の
モニタにおいて、特別の手段とか工程を要するものでな
い。Therefore, no special means or processes are required for forming the monitor pattern and for monitoring development using the monitor pattern.
（５）
（７）発明の効果
以上、詳細に説明したように、本発明にががるモニタパ
ターンを用いるときは、マスクの現像においてパターン
幅が適正値の幅のものであるが否かが簡単にモニタしう
るので、マスク製造の歩留りの改善と、マスク精度あ向
上に効果大である。(5) (7) Effects of the Invention As explained in detail above, when using the monitor pattern according to the present invention, it is important to check whether the pattern width is an appropriate width during mask development. Since it can be easily monitored, it is highly effective in improving mask manufacturing yield and mask accuracy.
図は本発明のモニタパターンの平面図である。
１−露光される部分、２−Ｆｔ＠光されない部分時 許
出願人 富士通株式会社
（６）The figure is a plan view of the monitor pattern of the present invention. 1-Exposed area, 2-Ft @ unexposed area Applicant: Fujitsu Limited (6)
Claims (1)
状態をモニタするパターンであって、パターン形成領域
外に形成された一定の幅の未露光部分より成り、前記未
露光部分の幅は適正な現像が行われた時に前記未露光部
分のポジティブホトレジストが除去されるように設定さ
れていることを特徴とするモニタパターン。A pattern for monitoring the development state of a positive photoresist film formed on a "substrate" d, which consists of an unexposed part of a certain width formed outside the pattern formation area, and the width of the unexposed part is determined so that proper development is not possible. A monitor pattern characterized in that the positive photoresist in the unexposed portion is removed when the monitor pattern is removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11312282A JPS594018A (en) | 1982-06-30 | 1982-06-30 | Monitor pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11312282A JPS594018A (en) | 1982-06-30 | 1982-06-30 | Monitor pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS594018A true JPS594018A (en) | 1984-01-10 |
Family
ID=14604074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11312282A Pending JPS594018A (en) | 1982-06-30 | 1982-06-30 | Monitor pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS594018A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2945787A1 (en) * | 1978-11-13 | 1980-05-14 | Fujitsu Ltd | MECHANICAL FILTER |
| JPH02105479U (en) * | 1988-09-30 | 1990-08-22 |
-
1982
- 1982-06-30 JP JP11312282A patent/JPS594018A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2945787A1 (en) * | 1978-11-13 | 1980-05-14 | Fujitsu Ltd | MECHANICAL FILTER |
| DE2945787C2 (en) * | 1978-11-13 | 1983-12-01 | Fujitsu Ltd., Kawasaki, Kanagawa | Mechanical filter with several rod-shaped resonators of the same vibration type |
| JPH02105479U (en) * | 1988-09-30 | 1990-08-22 |
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