KR940011101B1 - Dram 셀용 고성능 트렌치 커패시터 - Google Patents

Dram 셀용 고성능 트렌치 커패시터 Download PDF

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KR940011101B1
KR940011101B1 KR1019860700510A KR860700510A KR940011101B1 KR 940011101 B1 KR940011101 B1 KR 940011101B1 KR 1019860700510 A KR1019860700510 A KR 1019860700510A KR 860700510 A KR860700510 A KR 860700510A KR 940011101 B1 KR940011101 B1 KR 940011101B1
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KR
South Korea
Prior art keywords
layer
trench
doped
conductive
extending
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Expired - Lifetime
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KR1019860700510A
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English (en)
Korean (ko)
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KR880700451A (ko
Inventor
레보위츠 죠셉
토마스 린츠 윌리암
Original Assignee
아메리칸 텔리폰 앤드 텔레그라프 캄파니
마이클 와이. 엡스 라인
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Publication of KR880700451A publication Critical patent/KR880700451A/ko
Application granted granted Critical
Publication of KR940011101B1 publication Critical patent/KR940011101B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/109—Memory devices

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019860700510A 1984-11-30 1985-11-11 Dram 셀용 고성능 트렌치 커패시터 Expired - Lifetime KR940011101B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US676,677 1984-11-30
US06/676,677 US4694561A (en) 1984-11-30 1984-11-30 Method of making high-performance trench capacitors for DRAM cells
PCT/US1985/002234 WO1986003333A2 (en) 1984-11-30 1985-11-11 High-performance trench capacitors for dram cells

Publications (2)

Publication Number Publication Date
KR880700451A KR880700451A (ko) 1988-03-15
KR940011101B1 true KR940011101B1 (ko) 1994-11-23

Family

ID=24715497

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860700510A Expired - Lifetime KR940011101B1 (ko) 1984-11-30 1985-11-11 Dram 셀용 고성능 트렌치 커패시터

Country Status (7)

Country Link
US (1) US4694561A (https=)
EP (1) EP0203960B1 (https=)
JP (1) JPH0691210B2 (https=)
KR (1) KR940011101B1 (https=)
CA (1) CA1244143A (https=)
DE (1) DE3579454D1 (https=)
WO (1) WO1986003333A2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023196A (en) * 1990-01-29 1991-06-11 Motorola Inc. Method for forming a MOSFET with substrate source contact
TW214610B (en) * 1992-08-31 1993-10-11 Siemens Ag Method of making contact for semiconductor device
US5627092A (en) * 1994-09-26 1997-05-06 Siemens Aktiengesellschaft Deep trench dram process on SOI for low leakage DRAM cell
US5652170A (en) * 1996-01-22 1997-07-29 Micron Technology, Inc. Method for etching sloped contact openings in polysilicon
US5793075A (en) * 1996-07-30 1998-08-11 International Business Machines Corporation Deep trench cell capacitor with inverting counter electrode
US6057216A (en) * 1997-12-09 2000-05-02 International Business Machines Corporation Low temperature diffusion process for dopant concentration enhancement
US6001704A (en) * 1998-06-04 1999-12-14 Vanguard International Semiconductor Corporation Method of fabricating a shallow trench isolation by using oxide/oxynitride layers
US6498381B2 (en) * 2001-02-22 2002-12-24 Tru-Si Technologies, Inc. Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same
US6835977B2 (en) * 2002-03-05 2004-12-28 United Microelectronics Corp. Variable capactor structure
US7989922B2 (en) * 2008-02-08 2011-08-02 International Business Machines Corporation Highly tunable metal-on-semiconductor trench varactor
KR102258769B1 (ko) 2011-10-14 2021-06-01 지엘팜텍주식회사 장용소화효소제 및 그 제조방법
TWI691052B (zh) * 2019-05-07 2020-04-11 力晶積成電子製造股份有限公司 記憶體結構及其製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3928095A (en) * 1972-11-08 1975-12-23 Suwa Seikosha Kk Semiconductor device and process for manufacturing same
US3969746A (en) * 1973-12-10 1976-07-13 Texas Instruments Incorporated Vertical multijunction solar cell
DE2449688C3 (de) * 1974-10-18 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper
JPS5856266B2 (ja) * 1977-02-03 1983-12-14 テキサス インスツルメンツ インコ−ポレイテツド Ｍｏｓメモリ
FR2426335A1 (fr) * 1978-05-19 1979-12-14 Radiotechnique Compelec Dispositif semi-conducteur monolithique comportant une pluralite de cellules photosensibles
EP0009910B1 (en) * 1978-09-20 1985-02-13 Fujitsu Limited Semiconductor memory device and process for fabricating the device
US4274892A (en) * 1978-12-14 1981-06-23 Trw Inc. Dopant diffusion method of making semiconductor products
US4353086A (en) * 1980-05-07 1982-10-05 Bell Telephone Laboratories, Incorporated Silicon integrated circuits
DK145585C (da) * 1980-05-09 1988-07-25 Schionning & Arve As Taetningsring
JPS5937406B2 (ja) * 1980-07-28 1984-09-10 ダイキン工業株式会社 冷凍装置
JPS58137245A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 大規模半導体メモリ
US4472212A (en) * 1982-02-26 1984-09-18 At&T Bell Laboratories Method for fabricating a semiconductor device
JPS58154256A (ja) * 1982-03-10 1983-09-13 Hitachi Ltd 半導体装置
JPS58171832A (ja) * 1982-03-31 1983-10-08 Toshiba Corp 半導体装置の製造方法
US4471524A (en) * 1982-06-01 1984-09-18 At&T Bell Laboratories Method for manufacturing an insulated gate field effect transistor device
JPS59117258A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 半導体装置の製造方法
JPS59184555A (ja) * 1983-04-02 1984-10-19 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路装置およびその製造方法
US4569701A (en) * 1984-04-05 1986-02-11 At&T Bell Laboratories Technique for doping from a polysilicon transfer layer

Also Published As

Publication number Publication date
CA1258539C (https=) 1989-08-15
US4694561A (en) 1987-09-22
WO1986003333A2 (en) 1986-06-05
KR880700451A (ko) 1988-03-15
DE3579454D1 (de) 1990-10-04
EP0203960A1 (en) 1986-12-10
JPH0691210B2 (ja) 1994-11-14
JPS62500972A (ja) 1987-04-16
EP0203960B1 (en) 1990-08-29
CA1244143A (en) 1988-11-01
WO1986003333A3 (en) 1986-07-17

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