KR940008293B1 - 다이너믹 · 랜덤 · 액세스 · 메모리 및 그 동작방법 - Google Patents

다이너믹 · 랜덤 · 액세스 · 메모리 및 그 동작방법 Download PDF

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Publication number
KR940008293B1
KR940008293B1 KR1019910003063A KR910003063A KR940008293B1 KR 940008293 B1 KR940008293 B1 KR 940008293B1 KR 1019910003063 A KR1019910003063 A KR 1019910003063A KR 910003063 A KR910003063 A KR 910003063A KR 940008293 B1 KR940008293 B1 KR 940008293B1
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South Korea
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write data
internal
data
potential
level
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019910003063A
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English (en)
Korean (ko)
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KR920000074A (ko
Inventor
유끼오 미야사기
다께노리 오끼다까
야쓰노리 마에다
Original Assignee
미쓰비시 뎅끼 가부시끼가이샤
시기 모리야
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Publication of KR920000074A publication Critical patent/KR920000074A/ko
Application granted granted Critical
Publication of KR940008293B1 publication Critical patent/KR940008293B1/ko
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
KR1019910003063A 1990-02-28 1991-02-26 다이너믹 · 랜덤 · 액세스 · 메모리 및 그 동작방법 Expired - Fee Related KR940008293B1 (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP5039690 1990-02-28
JP5039790 1990-02-28
JP2-50398 1990-02-28
JP2-50396 1990-02-28
JP5039890 1990-02-28
JP2-50397 1990-02-28
JP2318754A JP2604277B2 (ja) 1990-02-28 1990-11-22 ダイナミック・ランダム・アクセス・メモリ
JP2-318754 1990-11-22

Publications (2)

Publication Number Publication Date
KR920000074A KR920000074A (ko) 1992-01-10
KR940008293B1 true KR940008293B1 (ko) 1994-09-10

Family

ID=27462489

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910003063A Expired - Fee Related KR940008293B1 (ko) 1990-02-28 1991-02-26 다이너믹 · 랜덤 · 액세스 · 메모리 및 그 동작방법

Country Status (4)

Country Link
US (1) US5103423A (enExample)
JP (1) JP2604277B2 (enExample)
KR (1) KR940008293B1 (enExample)
DE (1) DE4106155A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289432A (en) * 1991-04-24 1994-02-22 International Business Machines Corporation Dual-port static random access memory cell
US5708609A (en) * 1996-09-05 1998-01-13 Winbond Electronics Corp. Semiconductor memory device with dataline undershoot detection and reduced read access time
JPH11126491A (ja) * 1997-08-20 1999-05-11 Fujitsu Ltd 半導体記憶装置
US6266178B1 (en) 1998-12-28 2001-07-24 Texas Instruments Incorporated Guardring DRAM cell
US6779141B1 (en) * 2000-06-08 2004-08-17 Sun Microsystems, Inc. System and method for implementing memory testing in a SRAM unit
JP4415467B2 (ja) * 2000-09-06 2010-02-17 株式会社日立製作所 画像表示装置
US8648403B2 (en) * 2006-04-21 2014-02-11 International Business Machines Corporation Dynamic memory cell structures
US9087565B2 (en) * 2012-11-20 2015-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Pre-charging a data line
EP3386089B1 (en) * 2016-07-13 2020-01-01 Fuji Electric Co., Ltd. Power module

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH081754B2 (ja) * 1986-06-10 1996-01-10 日本電気株式会社 メモリ回路
JPH01178193A (ja) * 1988-01-07 1989-07-14 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
US5103423A (en) 1992-04-07
JPH03263684A (ja) 1991-11-25
DE4106155A1 (de) 1991-09-05
DE4106155C2 (enExample) 1993-07-29
KR920000074A (ko) 1992-01-10
JP2604277B2 (ja) 1997-04-30

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