KR940007969A - 소형화(micro-miniature) 구조 제조방법 - Google Patents

소형화(micro-miniature) 구조 제조방법 Download PDF

Info

Publication number
KR940007969A
KR940007969A KR1019930016296A KR930016296A KR940007969A KR 940007969 A KR940007969 A KR 940007969A KR 1019930016296 A KR1019930016296 A KR 1019930016296A KR 930016296 A KR930016296 A KR 930016296A KR 940007969 A KR940007969 A KR 940007969A
Authority
KR
South Korea
Prior art keywords
layer
photoresist
sacrificial
photoresist layer
depositing
Prior art date
Application number
KR1019930016296A
Other languages
English (en)
Other versions
KR970008324B1 (ko
Inventor
판 롱-쉔
자패 한스 핼무트
Original Assignee
죤 디. 크레인
인터내셔널 비지네스 머신즈 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 죤 디. 크레인, 인터내셔널 비지네스 머신즈 코포레이션 filed Critical 죤 디. 크레인
Publication of KR940007969A publication Critical patent/KR940007969A/ko
Application granted granted Critical
Publication of KR970008324B1 publication Critical patent/KR970008324B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/0085—Manufacture of substrate-free structures using moulds and master templates, e.g. for hot-embossing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/002—Electrostatic motors
    • H02N1/006—Electrostatic motors of the gap-closing type
    • H02N1/008—Laterally driven motors, e.g. of the comb-drive type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/035—Microgears
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/037—Microtransmissions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Weting (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

약 10에서 20㎛ 범위 두께를 갖는 프리 스탠딩(free standing) 소형화 구조(miniaturinzed structure) 제조에서, 희생 시스템에 기초를 둔 방법은 기판 물질의 선택, 기판 물질위에 희생물질 증착 및 형태를 정의하기 위한 희생층의 패턴닝 단계들을 포함한다. 포토레지스트 물질층은 희생층 위에 증착되며 대비-강화된 공학 리소그래피에 의해 패턴화되고 포토래지스트 몰드를 형성한다. 몰드위에는 금속물질층이 도금된다. 전기도금된 구조는 레지스트 프로파일에 일치하고, 통상적인 플리실리콘(polysilicon) 소형화 구조 두께의 몇배의 두께를 가질 수 있다. 포토레지스트 몰드와 희생층은 그후에 에칭액을 사용하여 에칭되어 9:1에서 10:1까지 또는 그 이상의 종횡비에서 약 10에서 20㎛ 범위의 두께를 갖는 프리 스탠딩 금속구조를 형성한다.

Description

소형화(micro-miniature) 구조 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따라 제조된 마이크로엑추에이터 구조의 평면도,
제2A-2M도는 제1도의 마이크로 엑추에이터 구조의 여러 제조단계를 예시하는 도면,
제3도는 제1도의 3-3라인을 따른 단면도.

Claims (10)

  1. 기판물질(a substrate material)을 선택하는 단계와, 상기 기판물질위에 희생물질층(a sacrificial layer of material)을 증착하는 단계와, 형태(a shape)를 정의(define)하기 위해 상기 희생층을 패터닝 하는(patterning) 단계와, 상기 희생층위에 포토레지스트 물질(a photoresist layer of material)을 증착(deposition)하는 단계와, 포토레지스트 몰드(a photoresist mold)를 형성하기 위해서 대비-강화된(contrast-enhanced) 광학 리소그래피(photolithography)에 의해 상기 포토레지스트층을 패터닝 하는 단계와, 상기 포토레지스트 몰드위에 금속물질층(a metallic layer of material)을 도금(plating)하는 단계와, 프리 스탠딩 금속구조(a free standing metallic structrue)를 형성하기 위해 에칭액(etchant)을 사용하여 상기 포토레지스트 몰드와 상기 희생층을 용해 (dissolving)하는 단계를 포함하는 소형화 구조(a miniaturinzed structure) 제조(fabrication)방법.
  2. 제1항에 있어서, 상기 희생층, 상기 금속층과 상기 에칭액은 높은 에칭 선택도(etching selectivity)를 제공하도록 선택되어 상기 금속층 보다 실질적으로 높은 비율에서 상기 희생층을 에칭시키는 소형화 구조 제조방법.
  3. 제1항에 있어서, 상기 희생층은 글래스 물질(a glass material)로 형성되고, 상기 금속층은 전이 원소(a transition element)로 형성되며, 상기 에칭액은 불화수소계 산물질(an HF-based acid material)로부터 형성되는 소형화 구조 제조방법.
  4. 제1항에 있어서, 상기 희생층이 포스포실리케이트 글래스(phosphosilicate glass)(PSG)이고, 상기 금속층이 구리 또는 크롬이며 상기 에칭액이 불화수소산(hydrofluoric acid:HF)인 소형화 구조 제조방법.
  5. 제1항에 있어서, 상기 포토레지스트층을 증착하는 단계는 상기 포토레지스트층 위에 대비 강화층(a contrast enchancement layer)을 증착하는 단계를 더 포함하는 소형화 구조 제조방법.
  6. 제1항에 있어서, 상기 포토레지스트층을 증착하는 단계는 상기 포토레지스트층 위에 장벽층(a barrier layer)과 상기 장벽층 위에 대비강화층을 증착하는 단계를 더 포함하는 소형화 구조 제조방법.
  7. 제4항에 있어서, 상기 대비 강화층은 표백성 염료(a breachable dye)를 가지는 복합물(a composition)로 부터 형성되는 소형화 구조 제조방법.
  8. 제1항에 있어서, 상기 포토레지스트층을 패터닝하는 단계는 상기 포토레지스트층을 마스킹(masking)하고 약 365㎛의 파장을 가진 평행 방사원(a source of collimated radiation)을 제공하는 낮은 개구부의 투영 시스템(a small numerical operture projection system)을 사용하여 상기 포토레지스트층의 마스킹(masking)되지 않은 부분을 노출광(exposing)시키는 단계를 포함하는 소형화 구조 제조방법.
  9. 제1항에 있어서, 상기 포토레지스트층은 약 2㎛보다 작지 않은 두께에서 소형화 구조 제조방법.
  10. 제1항에 있어서, 상기 포토레지스트층은 최소 9:1의 최대 종횡비(aspect ratio)를 가지는 프리 스텐딩 구조를 제공하기 위해 패턴화되는 소형화 구조 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930016296A 1992-09-21 1993-08-21 소형화 구조 제조방법 KR970008324B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US948,189 1992-09-21
US07/948,189 US5364742A (en) 1992-09-21 1992-09-21 Micro-miniature structures and method of fabrication thereof

Publications (2)

Publication Number Publication Date
KR940007969A true KR940007969A (ko) 1994-04-28
KR970008324B1 KR970008324B1 (ko) 1997-05-23

Family

ID=25487442

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930016296A KR970008324B1 (ko) 1992-09-21 1993-08-21 소형화 구조 제조방법

Country Status (9)

Country Link
US (1) US5364742A (ko)
EP (1) EP0592094B1 (ko)
JP (1) JP2744877B2 (ko)
KR (1) KR970008324B1 (ko)
CN (1) CN1077300C (ko)
DE (1) DE69323381T2 (ko)
MY (1) MY109365A (ko)
SG (1) SG42895A1 (ko)
TW (1) TW226475B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100323693B1 (ko) * 1999-05-20 2002-02-07 구자홍 미세 구조물 제조방법

Families Citing this family (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020053734A1 (en) 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US5481396A (en) * 1994-02-23 1996-01-02 Aura Systems, Inc. Thin film actuated mirror array
US5804314A (en) * 1994-03-22 1998-09-08 Hewlett-Packard Company Silicon microstructures and process for their fabrication
US6029337A (en) * 1994-06-06 2000-02-29 Case Western Reserve University Methods of fabricating micromotors with utilitarian features
US6360424B1 (en) 1994-06-06 2002-03-26 Case Western Reserve University Method of making micromotors with utilitarian features
US5705318A (en) * 1994-06-06 1998-01-06 Case Western Reserve University Micromotors and methods of fabrication
WO1995034943A1 (en) * 1994-06-10 1995-12-21 Case Western Reserve University Micromotors with utilitarian features and methods of their fabrication
US5788468A (en) * 1994-11-03 1998-08-04 Memstek Products, Llc Microfabricated fluidic devices
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US6547973B2 (en) * 1996-07-30 2003-04-15 Agilent Technologies, Inc. Fabrication of suspended structures using a sacrificial layer
EP0822579B1 (en) * 1996-07-31 2004-07-21 STMicroelectronics S.r.l. Intergrated microstructures and a method of fabricating thereof
US6052251A (en) 1996-11-01 2000-04-18 Seagate Technology, Inc. Actuator arm integrated piezoelectric microactuator
US6393685B1 (en) 1997-06-10 2002-05-28 The Regents Of The University Of California Microjoinery methods and devices
US6007968A (en) * 1997-10-29 1999-12-28 International Business Machines Corporation Method for forming features using frequency doubling hybrid resist and device formed thereby
US6023378A (en) * 1998-01-20 2000-02-08 Seagate Technology, Inc. Optical data storage system with improved head lens assembly
US6362939B1 (en) 1998-05-07 2002-03-26 Seagate Technology Llc. Balanced microactuator suspension
US6735055B1 (en) 1998-05-07 2004-05-11 Seagate Technology Llc Microactuator structure with vibration attenuation properties
US6320730B1 (en) 1998-09-26 2001-11-20 Seagate Technology Llc Low-stress disc drive microactuator cradle
US6404942B1 (en) 1998-10-23 2002-06-11 Corning Incorporated Fluid-encapsulated MEMS optical switch
US6389189B1 (en) 1998-10-23 2002-05-14 Corning Incorporated Fluid-encapsulated MEMS optical switch
US6297936B1 (en) 1998-11-09 2001-10-02 Seagate Technology Llc Integral load beam push-pull microactuator
US6233124B1 (en) 1998-11-18 2001-05-15 Seagate Technology Llc Piezoelectric microactuator suspension assembly with improved stroke length
US6361703B1 (en) 1999-03-04 2002-03-26 Caterpillar Inc. Process for micro-texturing a mold
US6351354B1 (en) 1999-05-07 2002-02-26 Seagate Technology Llc Head to flexure interconnection for disc drive microactuator
US6414823B1 (en) 1999-06-09 2002-07-02 Seagate Technology Llc Coil-structures for magnetic microactuator
US6507463B1 (en) 1999-06-11 2003-01-14 Seagate Technology, Inc. Micro disc drive employing arm level microactuator
US7217321B2 (en) 2001-04-06 2007-05-15 California Institute Of Technology Microfluidic protein crystallography techniques
US6929030B2 (en) 1999-06-28 2005-08-16 California Institute Of Technology Microfabricated elastomeric valve and pump systems
US8550119B2 (en) 1999-06-28 2013-10-08 California Institute Of Technology Microfabricated elastomeric valve and pump systems
US6899137B2 (en) 1999-06-28 2005-05-31 California Institute Of Technology Microfabricated elastomeric valve and pump systems
US7144616B1 (en) 1999-06-28 2006-12-05 California Institute Of Technology Microfabricated elastomeric valve and pump systems
DE60018425T2 (de) 1999-06-28 2006-04-06 California Institute Of Technology, Pasadena Elastomerische Mikropumpen- oder Mikroventilsysteme
US7052545B2 (en) 2001-04-06 2006-05-30 California Institute Of Technology High throughput screening of crystallization of materials
US8709153B2 (en) 1999-06-28 2014-04-29 California Institute Of Technology Microfludic protein crystallography techniques
US7244402B2 (en) 2001-04-06 2007-07-17 California Institute Of Technology Microfluidic protein crystallography
US7306672B2 (en) 2001-04-06 2007-12-11 California Institute Of Technology Microfluidic free interface diffusion techniques
US7195670B2 (en) 2000-06-27 2007-03-27 California Institute Of Technology High throughput screening of crystallization of materials
US7459022B2 (en) 2001-04-06 2008-12-02 California Institute Of Technology Microfluidic protein crystallography
US8052792B2 (en) 2001-04-06 2011-11-08 California Institute Of Technology Microfluidic protein crystallography techniques
US6798609B1 (en) 1999-07-28 2004-09-28 Seagate Technology, Inc. Magnetic microactuator with capacitive position sensor
US6859345B2 (en) * 1999-08-17 2005-02-22 Seagate Technology Llc Bending microactuator having a two-piece suspension design
US6643426B1 (en) 1999-10-19 2003-11-04 Corning Incorporated Mechanically assisted release for MEMS optical switch
DE19955975A1 (de) * 1999-11-19 2001-05-23 Inst Mikrotechnik Mainz Gmbh Lithographisches Verfahren zur Herstellung von Mikrobauteilen
US6574077B1 (en) 1999-12-02 2003-06-03 Seagate Technology Llc Microactuator assembly having improved standoff configuration
US6697232B1 (en) 2000-03-24 2004-02-24 Seagate Technology Llc Bonded transducer-level electrostatic microactuator for disc drive system
US20050118073A1 (en) 2003-11-26 2005-06-02 Fluidigm Corporation Devices and methods for holding microfluidic devices
US7867763B2 (en) 2004-01-25 2011-01-11 Fluidigm Corporation Integrated chip carriers with thermocycler interfaces and methods of using the same
US6683757B1 (en) 2000-04-05 2004-01-27 Seagate Technology Llc Slider-level microactuator for precise head positioning
US6785086B1 (en) 2000-04-05 2004-08-31 Seagate Technology Llc Transducer-level microactuator with dual-axis control
US6683758B2 (en) 2000-06-01 2004-01-27 Seagate Technology Llc Fabrication method for integrated microactuator coils
US7351376B1 (en) 2000-06-05 2008-04-01 California Institute Of Technology Integrated active flux microfluidic devices and methods
US6765766B2 (en) 2000-07-11 2004-07-20 Seagate Technology Llc Bonding tub improved electromagnetic microactuator in disc drives
US6851120B2 (en) * 2000-07-13 2005-02-01 Seagate Technology Llc Micro-actuator structure for improved stability
AU2001290879A1 (en) 2000-09-15 2002-03-26 California Institute Of Technology Microfabricated crossflow devices and methods
US7097809B2 (en) 2000-10-03 2006-08-29 California Institute Of Technology Combinatorial synthesis system
US7678547B2 (en) 2000-10-03 2010-03-16 California Institute Of Technology Velocity independent analyte characterization
AU2002211389A1 (en) 2000-10-03 2002-04-15 California Institute Of Technology Microfluidic devices and methods of use
US6778350B2 (en) 2000-10-06 2004-08-17 Seagate Technology Llc Feed forward control of voice coil motor induced microactuator disturbance
US7232109B2 (en) 2000-11-06 2007-06-19 California Institute Of Technology Electrostatic valves for microfluidic devices
US7378280B2 (en) 2000-11-16 2008-05-27 California Institute Of Technology Apparatus and methods for conducting assays and high throughput screening
AU2002248149A1 (en) 2000-11-16 2002-08-12 Fluidigm Corporation Microfluidic devices for introducing and dispensing fluids from microfluidic systems
US6614628B2 (en) 2001-01-19 2003-09-02 Seagate Technology Llc Moving coil micro actuator with reduced rotor mass
US6960437B2 (en) 2001-04-06 2005-11-01 California Institute Of Technology Nucleic acid amplification utilizing microfluidic devices
ATE500051T1 (de) 2001-04-06 2011-03-15 Fluidigm Corp Polymeroberflächenmodifikation
US6752922B2 (en) 2001-04-06 2004-06-22 Fluidigm Corporation Microfluidic chromatography
US7075162B2 (en) 2001-08-30 2006-07-11 Fluidigm Corporation Electrostatic/electrostrictive actuation of elastomer structures using compliant electrodes
US7192629B2 (en) 2001-10-11 2007-03-20 California Institute Of Technology Devices utilizing self-assembled gel and method of manufacture
AU2002332983B2 (en) * 2001-10-25 2005-10-06 Micro Relay Holdings Pty Ltd A method of fabrication of micro-devices
AUPR846701A0 (en) * 2001-10-25 2001-11-15 Microtechnology Centre Management Limited A method of fabrication of micro-devices
US8440093B1 (en) 2001-10-26 2013-05-14 Fuidigm Corporation Methods and devices for electronic and magnetic sensing of the contents of microfluidic flow channels
CA2467587A1 (en) 2001-11-30 2003-06-12 Fluidigm Corporation Microfluidic device and methods of using same
US7691333B2 (en) 2001-11-30 2010-04-06 Fluidigm Corporation Microfluidic device and methods of using same
CA2480728A1 (en) 2002-04-01 2003-10-16 Fluidigm Corporation Microfluidic particle-analysis systems
JP2006501056A (ja) 2002-09-25 2006-01-12 カリフォルニア インスティテュート オブ テクノロジー ミクロ流体大規模集積
WO2004040001A2 (en) 2002-10-02 2004-05-13 California Institute Of Technology Microfluidic nucleic acid analysis
CN100365510C (zh) * 2003-01-15 2008-01-30 友达光电股份有限公司 制作一金属图案的方法
US20050145496A1 (en) 2003-04-03 2005-07-07 Federico Goodsaid Thermal reaction device and method for using the same
US7476363B2 (en) 2003-04-03 2009-01-13 Fluidigm Corporation Microfluidic devices and methods of using same
US7604965B2 (en) 2003-04-03 2009-10-20 Fluidigm Corporation Thermal reaction device and method for using the same
US8828663B2 (en) 2005-03-18 2014-09-09 Fluidigm Corporation Thermal reaction device and method for using the same
US7666361B2 (en) 2003-04-03 2010-02-23 Fluidigm Corporation Microfluidic devices and methods of using same
EP1685282A2 (en) 2003-04-17 2006-08-02 Fluidigm Corporation Crystal growth devices and systems, and methods for using same
US7695683B2 (en) 2003-05-20 2010-04-13 Fluidigm Corporation Method and system for microfluidic device and imaging thereof
DE10333840B4 (de) 2003-07-24 2006-12-28 Infineon Technologies Ag Halbleiterbauteil mit einem Kunststoffgehäuse, das eine Umverdrahrungsstruktur aufweist und Verfahren zu deren Herstellung
SG145697A1 (en) 2003-07-28 2008-09-29 Fluidigm Corp Image processing method and system for microfluidic devices
US7413712B2 (en) 2003-08-11 2008-08-19 California Institute Of Technology Microfluidic rotary flow reactor matrix
US6831539B1 (en) 2003-08-28 2004-12-14 Seagate Technology Llc Magnetic microactuator for disc with integrated head connections and limiters drives
US7277257B2 (en) * 2003-12-05 2007-10-02 Seagate Technology Llc Transducer-level microactuator for a magnetic recording system
US7407799B2 (en) 2004-01-16 2008-08-05 California Institute Of Technology Microfluidic chemostat
MXPA06008399A (es) 2004-01-25 2008-03-07 Fluidigm Corp Dispositivos formadores de cristal y sistemas y metodos para hacer y utilizar los mismos.
US8025831B2 (en) 2004-05-24 2011-09-27 Agency For Science, Technology And Research Imprinting of supported and free-standing 3-D micro- or nano-structures
US7217428B2 (en) * 2004-05-28 2007-05-15 Technology Innovations Llc Drug delivery apparatus utilizing cantilever
GB0412097D0 (en) * 2004-05-29 2004-06-30 Rolls Royce Plc Method of producing a self supporting form from a coating material
US7276453B2 (en) * 2004-08-10 2007-10-02 E.I. Du Pont De Nemours And Company Methods for forming an undercut region and electronic devices incorporating the same
US7166860B2 (en) * 2004-12-30 2007-01-23 E. I. Du Pont De Nemours And Company Electronic device and process for forming same
US7224883B2 (en) * 2005-03-31 2007-05-29 Xerox Corporation Actuator and latching systems and methods
US7695632B2 (en) * 2005-05-31 2010-04-13 Lam Research Corporation Critical dimension reduction and roughness control
US7815868B1 (en) 2006-02-28 2010-10-19 Fluidigm Corporation Microfluidic reaction apparatus for high throughput screening
US8623231B2 (en) * 2008-06-11 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for etching an ultra thin film
CN104599979B (zh) * 2015-01-05 2017-06-20 中国科学院物理研究所 自支撑三维器件及其制备方法
AT520718B1 (de) * 2018-01-30 2019-07-15 Joanneum Res Forschungsgmbh Verfahren zur herstellung eines formeinsatzes mit (sub-)mikrostrukturen sowie werkstück mit (sub-)mikrostrukturen

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108874A (en) * 1982-11-01 1992-04-28 Microsi, Inc. Composite useful in photolithography
US4677049A (en) * 1983-09-28 1987-06-30 General Electric Company Spin castable photobleachable layer forming compositions
US4663275A (en) * 1984-09-04 1987-05-05 General Electric Company Photolithographic method and combination including barrier layer
JPS6179226A (ja) * 1984-09-27 1986-04-22 Hitachi Ltd パタ−ン形成方法
US4614119A (en) * 1985-03-08 1986-09-30 The Foxboro Company Resonant hollow beam and method
JPH0821567B2 (ja) * 1985-03-14 1996-03-04 富士通株式会社 超微細管の製造方法
US4764244A (en) * 1985-06-11 1988-08-16 The Foxboro Company Resonant sensor and method of making same
EP0239376A3 (en) * 1986-03-27 1988-05-11 Gec-Marconi Limited Contrast enhanced photolithography
US4925770A (en) * 1986-05-20 1990-05-15 Director General Of Agency Of Industrial Science And Technology Contrast-enhancing agent for photolithography
EP0280197A3 (en) * 1987-02-23 1990-05-23 Oki Electric Industry Company, Limited Process for forming photoresist pattern
JP2524993B2 (ja) * 1987-03-04 1996-08-14 沖電気工業株式会社 レジストパタ−ンの形成方法
US4740410A (en) * 1987-05-28 1988-04-26 The Regents Of The University Of California Micromechanical elements and methods for their fabrication
JPS6410245A (en) * 1987-07-02 1989-01-13 Matsushita Electric Ind Co Ltd Pattern forming method
US5196295A (en) * 1987-07-31 1993-03-23 Microsi, Inc. Spin castable mixtures useful for making deep-UV contrast enhancement layers
US5106723A (en) * 1988-03-10 1992-04-21 Microsi, Inc. Contrast enhancement layer compositions, alkylnitrones, and use
US5180655A (en) * 1988-10-28 1993-01-19 Hewlett-Packard Company Chemical compositions for improving photolithographic performance
US5025346A (en) * 1989-02-17 1991-06-18 Regents Of The University Of California Laterally driven resonant microstructures
US5072288A (en) * 1989-02-21 1991-12-10 Cornell Research Foundation, Inc. Microdynamic release structure
CA2011927C (en) * 1989-06-02 1996-12-24 Alan Lee Sidman Microlithographic method for producing thick, vertically-walled photoresist patterns
US5206983A (en) * 1991-06-24 1993-05-04 Wisconsin Alumni Research Foundation Method of manufacturing micromechanical devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100323693B1 (ko) * 1999-05-20 2002-02-07 구자홍 미세 구조물 제조방법

Also Published As

Publication number Publication date
US5364742A (en) 1994-11-15
EP0592094B1 (en) 1999-02-03
CN1085667A (zh) 1994-04-20
KR970008324B1 (ko) 1997-05-23
SG42895A1 (en) 1997-10-17
DE69323381T2 (de) 1999-09-30
JP2744877B2 (ja) 1998-04-28
JPH06224178A (ja) 1994-08-12
EP0592094A3 (en) 1994-10-12
DE69323381D1 (de) 1999-03-18
MY109365A (en) 1997-01-31
CN1077300C (zh) 2002-01-02
TW226475B (ko) 1994-07-11
EP0592094A2 (en) 1994-04-13

Similar Documents

Publication Publication Date Title
KR940007969A (ko) 소형화(micro-miniature) 구조 제조방법
CA2288480A1 (en) A method for fabrication of multi-step structures using embedded etch stop layers
EP0811771A3 (de) Verfahren zur Herstellung eines Aktuators
GB2137808A (en) Integrated circuit processing method
US5976944A (en) Integrated circuit with thin film resistors and a method for co-patterning thin film resistors with different compositions
JP2000158400A (ja) 局部的に補強された金属性のマイクロ構造を製作する製法並びに局部的に補強された金属性のマイクロ構造
US6974549B2 (en) Method for forming fine grooves and stamper and structure with fine grooves
JP3385708B2 (ja) 微細構造体の形成方法
KR100390963B1 (ko) 반도체 소자의 콘택홀 형성방법
US7067223B2 (en) Adjustable transmission phase shift mask
KR100310942B1 (ko) 초전도 소자의 포토리소그라피 방법
KR100310943B1 (ko) 초전도 소자의 포토리소그라피 방법
US6429034B1 (en) Method of making high aspect ratio features during surface micromachining
DE10323350A1 (de) Lithographisches Verfahren zur Herstellung von Mikrobauteilen
KR100987106B1 (ko) 중간층 형성을 통한 선택적 도금을 이용한 멀티레이어 기판제조방법
KR100310937B1 (ko) 초전도소자의포토리소그라피방법
JPH04144230A (ja) 半導体装置及びその製造方法
JPS5978586A (ja) Ｎｂのパタ−ン形成法
KR100309133B1 (ko) 반도체 소자의 금속배선 형성방법
KR20010070533A (ko) 초전도 소자의 포토리소그라피 방법
JP2809274B2 (ja) 半導体装置の製造方法
KR20200081041A (ko) 고분자 평면 광소자용 단일 정렬 멀티패턴 제조 방법
KR20030034608A (ko) 자외선 리가기술을 이용한 광스위치 제조방법
KR960024654A (ko) 포토 마스크 패턴 형성 방법
JP2005274651A (ja) 微細格子作製方法

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20010714

Year of fee payment: 5

LAPS Lapse due to unpaid annual fee