KR940006348Y1 - Manufacturing method of optical semiconductor - Google Patents
Manufacturing method of optical semiconductor Download PDFInfo
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- KR940006348Y1 KR940006348Y1 KR2019910024500U KR910024500U KR940006348Y1 KR 940006348 Y1 KR940006348 Y1 KR 940006348Y1 KR 2019910024500 U KR2019910024500 U KR 2019910024500U KR 910024500 U KR910024500 U KR 910024500U KR 940006348 Y1 KR940006348 Y1 KR 940006348Y1
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- South Korea
- Prior art keywords
- solution
- wafer holder
- main body
- piston
- optical semiconductor
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- 230000003287 optical effect Effects 0.000 title description 10
- 239000004065 semiconductor Substances 0.000 title description 10
- 238000004519 manufacturing process Methods 0.000 title description 7
- 239000000243 solution Substances 0.000 claims description 47
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
- 210000001124 body fluid Anatomy 0.000 claims 1
- 239000010839 body fluid Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 12
- 238000007373 indentation Methods 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
내용 없음.No content.
Description
제1도는 종래 광반도체 제조장치의 구성도.1 is a block diagram of a conventional optical semiconductor manufacturing apparatus.
제2도는 본 고안의 구성상태도로서,2 is a configuration diagram of the present invention,
제2a도는 단일 웨이퍼 홀더 사용 상태도,Figure 2a is a state of use of a single wafer holder,
제2b도는 복수개의 웨이퍼 홀더 사용 상태도.2b is a state of using a plurality of wafer holders.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 본체 1a, 1b, 1c : 주입공1: main body 1a, 1b, 1c: injection hole
2 : 홀더장착부 3 : 웨이퍼홀더2: holder mounting part 3: wafer holder
4a, 4b, 4c : 용액통로 5a, 5b, 5c : 압입공4a, 4b, 4c: Solution passages 5a, 5b, 5c: Indentation holes
6 : 실린더 7 : 피스톤6: cylinder 7: piston
본 고안은 단일몸체에 다수의 웨이퍼 홀더(Wafer holder)를 동시에 장착하여 발광소자를 갖는 기판을 다량 생산하도록한 광반도체 제조장치에 관한 것이다.The present invention relates to an optical semiconductor manufacturing apparatus for producing a large amount of substrate having a light emitting device by simultaneously mounting a plurality of wafer holder (wafer holder) on a single body.
종래에는 광반도체 제조장치를 구성함에 있어서, 첨부도면 제1도에 도시된 바와 같이 격벽(11')이 형성된 본체(11) 내부에 용액 압입용 피스톤(17)을 유설하고 상기 피스톤(17) 상면에 지지블럭(18)을 유설하여 본체(11)의 격벽(11')과 지지블럭(18)사이에 웨이퍼 홀더(13)를 삽설하여, 용액통(11a)과 용액수납실(16)로 구분되게 하였으며, 상기 웨이퍼 홀더(13) 상면에는 슬라이더 접동되도록 커터(Cutter)(8)를 설치하였다.Conventionally, in the construction of an optical semiconductor manufacturing apparatus, as shown in FIG. 1 of the accompanying drawings, the piston 17 for solution indentation is provided inside the main body 11 having the partition wall 11 ′ formed thereon, and the upper surface of the piston 17. The support block 18 is installed in the chamber, and the wafer holder 13 is inserted between the partition wall 11 'of the main body 11 and the support block 18, and is divided into the solution container 11a and the solution storage chamber 16. In addition, a cutter 8 was installed on the upper surface of the wafer holder 13 to slide the slider.
이와 같이 구성된 종래의 광반도체 제조장치에는 제작하고자 하는 광반도체의 기판을 웨이퍼 홀더(13)의 기판 장착공(13a)에 장착한후 본체(11)와 웨이퍼 홀더(13)로 구성되는 용액통(13a)에 성장시키고자 하는 epi층의 원료가 되는 성장용액을 채운 다음 지지블럭(18)을 후퇴시켜 웨이퍼홀더(18)를 후퇴하면 웨이퍼 홀더 (18)의 선단과 본체(11)의 격벽(11')사이로 성장용액이 흘러내려 피스톤(17)이 설치되어 있는 용액수납실(16)에 채워지게 된다.In the conventional optical semiconductor manufacturing apparatus configured as described above, after mounting the substrate of the optical semiconductor to be manufactured in the substrate mounting hole 13a of the wafer holder 13, a solution container composed of the main body 11 and the wafer holder 13 ( 13a) is filled with a growth solution that is a raw material for the epi layer to be grown, and then the support block 18 is retracted to retract the wafer holder 18. Then, the front end of the wafer holder 18 and the partition 11 of the main body 11 are filled. The growth solution flows between ') and fills the solution storage chamber 16 in which the piston 17 is installed.
상기한 방법으로 성장용액이 용액수납실(16)에 채워지면 지지블럭(18)을 전진시켜 웨이퍼 홀더(13)를 본체(11)의 격벽(11')에 압착시켜서 용액통(11a)과 용액수납실(16)이 분리되도록 봉쇄시킨다.When the growth solution is filled in the solution storage chamber 16 by the above-described method, the support block 18 is advanced to compress the wafer holder 13 to the partition wall 11 'of the main body 11 so as to press the solution container 11a and the solution. The storage chamber 16 is sealed to separate.
상기와 같은 상태에서 피스톤(17)을 전진시키면 용액수납실(16)에 채워진 성장용액이 광반도체의 기판이 장착된 웨이퍼홀더(13)의 장착공(13a)으로 들어가 채워진 다음 상부로 밀려나오게 된다.When the piston 17 is advanced in the above state, the growth solution filled in the solution storage chamber 16 enters the mounting hole 13a of the wafer holder 13 on which the substrate of the optical semiconductor is mounted, and then is pushed upward. .
이때 커터(20)가 전진하여 웨이퍼홀더(13)의 상부로 밀려나온 성장용액을 밀어내고 서서히 냉각시키면 기판위에 epi층이 원하는 두께만큼 성장되게 된다. 상기한 상태로 웨이퍼홀더(13)내의 기판에 epi층이 원하는 두께만큼 성장이 되었을때 피스톤(17)을 후퇴시키면 잔여 성장용액이 다시 용액수납실(16)로 복귀되어 고이고 작업은 종료된다.At this time, when the cutter 20 is advanced to push out the growth solution pushed out of the wafer holder 13 and gradually cools, the epi layer is grown to a desired thickness on the substrate. When the piston 17 is retracted when the epi layer grows to the substrate in the wafer holder 13 to the desired thickness in the above state, the remaining growth solution is returned to the solution storage chamber 16 and the work is completed.
그러나 상기한 종래의 장치는 단일 웨이퍼홀더를 구성하므로 두층 이상이 서로 인접하는 epi층을 성장시켜야만 효율이 좋은 발광소자를 얻을 수 있는 광반도체 제조장치로서는 많은 문제점이 있었다.However, since the conventional device constitutes a single wafer holder, there are many problems as an optical semiconductor manufacturing apparatus capable of obtaining a light emitting device having high efficiency only when two or more layers grow epi layers adjacent to each other.
본 고안은 상기한 종래의 문제점을 감안하여 한꺼번에 다수의 웨이퍼 홀더를 장착하여 많은 기판에 동시에 epi층을 성장시키도록 구성함으로써 발광소자를 갖는 기판을 다량 생산하도록 한 것으로 이를 첨부도면 제2도에 의거 상세히 설명하면 다음과 같다.The present invention is designed to grow a large number of substrates having light emitting devices by mounting a plurality of wafer holders at a time to grow an epi layer on many substrates in view of the above-described conventional problems. It will be described in detail as follows.
상부에 성장용 용액이 주입되는 다수개의 주입공(1a)(1b)(1c)이 형성되며, 상기 주입공(1a)(1b)(1c)부분의 하부에 웨이퍼홀더(3) 및 슬라이드 장착부(1f)가 형성되며, 상기 웨이퍼 홀더(3) 및 슬라이드 장착부(1f)하부에 용액흐름을 안내하는 다수개의 용액통로(4a)(4b)(4c)가 형성되며, 상기 용액통로(4a)(4b)(4c)하부에 피스톤 장착부(6)가 형성된 본체(1)와, 웨이퍼를 장착하는 웨이퍼 홀더(3)와, 상기 웨이퍼홀더를 이동시킴과 함께 본체의 주입공(1a)(1b)(1c)를 통한 용액을 안내하는 용액통로 (4a)(4b)(4c)가 형성된 슬라이드(8)와, 본체의 용액통로를 통해 흘러내린 용액을 다시 올려 보내 웨이퍼에 성장시키게 하는 피스톤(7)과, 상기 피스톤 운동시 용액의 흐름을 본체 용액통로로 가이드하는 다수개의 블럭을 포함하는 구성이다.A plurality of injection holes 1a, 1b, and 1c into which a growth solution is injected is formed at an upper portion thereof, and a wafer holder 3 and a slide mounting part under the injection holes 1a, 1b, and 1c. 1f) are formed, and a plurality of solution passages 4a, 4b and 4c for guiding the solution flow are formed under the wafer holder 3 and the slide mount 1f, and the solution passages 4a and 4b. 4c, the main body 1 having the piston mounting portion 6 formed thereon, the wafer holder 3 for mounting the wafer, and the wafer holder are moved, and the injection holes 1a, 1b and 1c of the main body are moved. A slide (8) formed with solution passages (4a) (4b) (4c) for guiding the solution through the pump, and a piston (7) for reloading the solution flowing through the solution passage of the main body to be grown on the wafer; The piston comprises a plurality of blocks for guiding the flow of the solution to the body solution passage during movement.
즉 다수의 주입공(1a)(1b)(1c)은 성장시키고자 하는 용액을 실린더(6) 내부로 주입하기 위한 것이며, 이는 홀더 장착부(2)에 웨이퍼 홀더(3)를 장착하였을때 웨이퍼 홀더(3) 후단과 일치되도록 구성한다.That is, the plurality of injection holes 1a, 1b, and 1c are for injecting the solution to be grown into the cylinder 6, which is a wafer holder when the wafer holder 3 is mounted in the holder mounting part 2. (3) It is configured to be consistent with the latter stage.
이와 같은 구성의 본 고안은 단일 웨이퍼 홀더를 장착하여 광반도체에 epi층을 성장시키고자 할때는, 첨부도면 제2a도에서와 같이, 홀더 장착부(2)에 epi층을 성장시킬 기판을 장착공(3a)에 장착한 한개의 웨이퍼 홀더(3)를 장착하고, 지지슬라이더(8)를 주입공(1a) 위치까지 삽입한 상태가 되도록 하며, 실린더(6)의 피스톤(7)은 용액통로(4a) 위치까지 전진된 상태가 되도록 한다. 이와 같은 상태에서 상기 주입공(1a)을 통하여 성장용액을 주입하면, 성장용액은 주입공(1a)과 홀더 장착부(2), 용액통로(4a)을 통하여 실린더(6)내에 채워지게 된다.When the epi layer is grown on the optical semiconductor by mounting a single wafer holder, the present invention has a structure in which a substrate for growing an epi layer on the holder mounting portion 2 is mounted as shown in FIG. 2a. A wafer holder (3) mounted on the blade), and the support slider (8) is inserted into the injection hole (1a) position, and the piston (7) of the cylinder (6) is the solution passage (4a) Make sure you are in the advanced position. When the growth solution is injected through the injection hole 1a in this state, the growth solution is filled in the cylinder 6 through the injection hole 1a, the holder mounting part 2, and the solution passage 4a.
상기한 방법으로 실린더(6)내에 성장용액이 채워지면 먼저 지지슬라이더(8)를 전진시켜 웨이퍼 홀더(3)를 밀착지지함과 동시에 실린더(6)를 봉쇄한다.When the growth solution is filled in the cylinder 6 by the above-described method, the support slider 8 is first advanced to closely hold the wafer holder 3 and seal the cylinder 6 at the same time.
상기와 같이 실린더(6)를 봉쇄시킨후 피스톤(7)을 전진시키면 실린더(6)내부에 채워진 성장용액이 압입공(5a)을 통하여 웨이퍼 홀더(3) 내부의 기판이 장착된 장착공(3a)으로 압입되어 채워져서 성장됨으로써 기판위에 epi층이 성장되는 것이다.When the piston 7 is advanced after the cylinder 6 is sealed as described above, the growth solution filled in the cylinder 6 is mounted through the press-in hole 5a to the mounting hole 3a in which the substrate inside the wafer holder 3 is mounted. The epi layer is grown on the substrate by indentation and growth.
상기한 상태에서 원하는 두께만큼 epi층이 성장되었을때 먼저 피스톤(7)을 후퇴시키면, 잔여 성장용액이 실린더(6)내로 흘러들어감과 동시에 블럭(9)이 하강하게 된다.In the above state, when the epi layer is grown to the desired thickness, the piston 7 is first retracted, so that the remaining growth solution flows into the cylinder 6 and the block 9 descends.
여기서 동시에 다수의 기판에 epi층을 성장시키고자 할때는 첨부도면 제2b도에 도시된 바와 같이 다수의 웨이퍼 홀더(2)를 동시에 장착하여 피스톤(7)을 최후단의 용액통로(4c)까지 후퇴시켜서, 각 주입공(1a)(1b)(1c)으로 성장용액을 주입하여 실린더(6)에 성장용액을 채운 다음 지지블럭(8)을 전진시켜 웨이퍼 홀더(3)를 고정하고 피스톤(7)을 전진시키면 동시에 다수의 광반도체를 제조할 수 있는 것이다.In this case, when the epi layer is to be grown on a plurality of substrates at the same time, as shown in FIG. 2B, a plurality of wafer holders 2 are simultaneously mounted to retract the piston 7 to the last solution passage 4c. Inject the growth solution into each of the injection holes 1a, 1b and 1c to fill the growth solution in the cylinder 6, and then advance the support block 8 to fix the wafer holder 3 to fix the piston 7 By advancing, many optical semiconductors can be manufactured at the same time.
또한 각 웨이퍼 홀더(3)에 차례로 epi층을 성장시키고자 할때는 전방에서 부터 순차로 성장시켜 나갈 수도 있는 것이며 용도에 따라서는 보다 큰 몸체(1)에 홀더 장착부(2)와 실린더(6)를 더욱 크게 형성하여 주입공과 용액통로 및 압입공을 늘이면 원하는 만큼 다량 생산이 가능하게 된다.In addition, when the epi layer is to be grown on each wafer holder 3 in turn, it may be grown sequentially from the front. Depending on the application, the holder mounting portion 2 and the cylinder 6 may be further mounted on the larger body 1. If it is formed larger and the injection hole, the solution passage and the indentation hole are increased, it is possible to produce as much as desired.
상기한 바와 같이 본 고안은 한번의 공정으로 다량 생산이 가능하여 생산성을 향상시키는 것은 물론 필요에 따라 생산량을 조절할 수 있는 신규 유용한 고안이다.As described above, the present invention is a new useful design that can be produced in large quantities in one process to improve productivity as well as to adjust the production amount as needed.
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KR2019910024500U KR940006348Y1 (en) | 1991-12-28 | 1991-12-28 | Manufacturing method of optical semiconductor |
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KR2019910024500U KR940006348Y1 (en) | 1991-12-28 | 1991-12-28 | Manufacturing method of optical semiconductor |
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