CN109536926B - Clamp for atomic layer deposition and method for producing deposited film - Google Patents
Clamp for atomic layer deposition and method for producing deposited film Download PDFInfo
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- CN109536926B CN109536926B CN201910066631.6A CN201910066631A CN109536926B CN 109536926 B CN109536926 B CN 109536926B CN 201910066631 A CN201910066631 A CN 201910066631A CN 109536926 B CN109536926 B CN 109536926B
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- filter screen
- screen
- atomic layer
- layer deposition
- cover plate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a clamp for atomic layer deposition and a method for producing a deposited film, the clamp comprises a bottom plate, a cover plate, a first filter screen, a second filter screen and a channel handle, the cover plate is detachably arranged on the bottom plate, through holes are arranged on the cover plate and the bottom plate respectively, the two through holes are oppositely arranged, the first filter screen is arranged in the through hole of the cover plate, the second filter screen is arranged in the through hole of the bottom plate, the first filter screen and the second filter screen are separated, a gas outlet is arranged on the bottom plate, the gas outlet is arranged below the second filter screen, the channel handle is fixed on the bottom plate, a gas channel is arranged in the channel handle, one end of the gas channel is communicated with the outside, the other end of the gas channel is communicated with the gas outlet, a precursor source can react with a pre-laid powder sample, a desired deposited film is obtained on the inner surface of the second filter screen, and one clamp can, has good practicability.
Description
Technical Field
The invention relates to the technical field of atomic layer deposition powder materials, in particular to a clamp for atomic layer deposition and a method for producing a deposited film.
Background
At present, the atomic layer deposition technology is mainly applied to the fields of microelectronics and nanomaterials, and is one of the most commonly used thin film production methods in the chip manufacturing process. The thickness of the deposited film can be accurately controlled by utilizing the atomic layer deposition technology, and the depositable materials comprise oxides, nitrides, fluorides, metal simple substances, carbides, sulfides, organic-inorganic composite film layers and the like.
The existing atomic layer deposition technology has the disadvantages that the base material is mainly a sheet material, a linear material and an irregular material, the existing atomic layer deposition technology has not much concern about the powder material, mainly because the powder material is difficult to fix, how to fix the powder material into a bottleneck of the application of the powder material in the field, and until now, the related process technology for carrying out atomic deposition on the powder material has not been seen.
Disclosure of Invention
The technical problem to be solved by the invention is to overcome the defects of the prior art and provide a clamp for atomic layer deposition and a method for producing a deposited film, wherein the clamp can carry out atomic deposition on powder materials.
In order to achieve the purpose, the invention adopts the following technical scheme:
in one general aspect, there is provided a jig for atomic layer deposition comprising a base plate, a cover plate, a first screen, a second screen, and a channel handle, wherein:
the cover plate is detachably arranged on the bottom plate, through holes are formed in the cover plate and the bottom plate, and the two through holes are arranged oppositely;
the first filter screen is arranged in the through hole of the cover plate, the second filter screen is arranged in the through hole of the bottom plate, and the first filter screen and the second filter screen are spaced;
the bottom plate is provided with a gas outlet, the gas outlet is arranged below the second filter screen, the channel handle is fixed on the bottom plate, a gas channel is arranged in the channel handle, one end of the gas channel is communicated with the outside, and the other end of the gas channel is communicated with the gas outlet.
Preferably, the clamp for atomic layer deposition further comprises an interface ring fixed at the lower part of the channel handle, and the interface ring is communicated with one end of the gas channel.
Preferably, the number of interface rings below the channel handle is at least one.
Preferably, the jig for atomic layer deposition further comprises a core ring disposed between the base plate and the cover plate.
Preferably, the bottom plate and the cover plate both comprise an outer ring and an inner ring, the outer ring is arranged on the outer side of the inner ring, the middle part of the inner ring is a through hole, the thickness of the inner ring is smaller than that of the outer ring, the core ring is arranged between the inner ring of the bottom plate and the inner ring of the cover plate, the core ring is detachably connected with the two outer rings simultaneously, the second filter screen is arranged between the inner ring of the bottom plate and the core ring, and the first filter screen is arranged between the inner ring of the cover plate and the core.
Preferably, the number of the holes of the first filter screen and the second filter screen is 200-3000.
Preferably, the number of the channel handles is at least one.
In one general aspect, there is provided a method of producing a deposited film, comprising the steps of:
placing a powder sample between a first screen and a second screen in the fixture;
communicating a channel handle of the clamp with a source outlet hole of the atomic layer deposition equipment;
and spraying a precursor source to the fixture, introducing carrier gas, and reacting to obtain a deposited film.
Preferably, the spraying the precursor source to the jig specifically comprises:
controlling intermittent injection of the source outlet holes communicated with the channel handles;
controlling intermittent ejection of the source holes communicated with the interface rings on one channel handle.
Preferably, the introduction of the carrier gas specifically comprises:
pumping air above the first filter screen to reduce the air pressure above the first filter screen;
and inflating the gas below the second filter screen, wherein the gas drives the precursor source to move upwards to enter between the first filter screen and the second filter screen.
The invention provides a clamp for atomic layer deposition and a method for producing a deposited film, wherein a first filter screen and a second filter screen are spaced, the first filter screen is arranged above the second filter screen, a powder material can be paved between the first filter screen and the second filter screen, a gas channel is arranged in a channel handle, a precursor source can enter the lower part of the second filter screen through the gas channel, and then the precursor source reacts with a powder sample paved in advance between the first filter screen and the second filter screen to obtain a desired deposited film, and one clamp can be suitable for various film deposition experiments and has good practicability.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic front view of a chuck for atomic layer deposition according to the present invention;
FIG. 2 is a schematic cross-sectional view of a chuck for atomic layer deposition according to the present invention;
FIG. 3 is a flow chart of a method of using the chuck for atomic layer deposition of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Fig. 3 is a flowchart of a method for using a fixture for atomic layer deposition according to the present invention, and as shown in fig. 3, an embodiment of the present invention discloses a method for using a fixture for atomic layer deposition, including the following steps:
s01, putting the powder sample between the first filter screen and the second filter screen in the clamp;
in step S01, the jig used is a jig for atomic layer deposition, which includes a base plate 8, a cover plate 1, a first screen 6, a second screen 7, and a passage handle 2, wherein:
FIG. 1 is a front view structural diagram of a clamp for atomic layer deposition according to the present invention, FIG. 2 is a cross-sectional structural diagram of the clamp for atomic layer deposition according to the present invention, and referring to FIGS. 1 and 2, a bottom plate 8 and a cover plate 1 are disposed opposite to each other and abutted against each other, both the bottom plate 8 and the cover plate 1 are circular, that is, a first through hole is formed inside the cover plate 1, a second through hole is formed inside the bottom plate 8, both the through holes are coaxially disposed, and the ring body of the bottom plate 8 and the cover plate 1 is divided into an outer ring and an inner ring, the outer ring and the inner ring are integrally manufactured, the thickness of the inner ring is smaller than that of the outer ring, that is, a step shape is formed at the junction of the outer ring and the inner ring, the outer end surfaces of the outer ring and the inner ring are flush with each other, threads are provided on the circumferential surface of the inner ring of the outer, the core ring 5 is arranged in the space between the bottom plate 8 and the inner ring of the cover plate 1, the outer circumference of the core ring 5 is provided with external threads, the internal threads on the outer rings of the bottom plate 8 and the cover plate 1 are connected with the external threads on the outer circumference of the core ring 5, and the bottom plate 8 and the cover plate 1 can be fastened together through threaded connection.
Further, the preparation substrate of the clamp for atomic layer deposition includes, but is not limited to, aluminum, stainless steel, silicon carbide, graphite, and the like, and the main function of the material is to prevent the material from reacting with the powder to be deposited.
Further, the number of the holes of the first filter screen 6 and the second filter screen 7 is 200-3000, the second filter screen 7 is arranged in the second through hole of the bottom plate 8, namely, the second filter screen 7 is arranged between the inner ring of the bottom plate 8 and the core ring 5, the first filter screen 6 is arranged in the first through hole of the cover plate 1, namely, the first filter screen 6 is arranged between the inner ring of the cover plate 1 and the core ring 5, the core ring 5 is connected with the bottom plate 8 and the cover plate 1, the first filter screen 6 and the second filter screen 7 can be fastened in the clamp respectively, and the thickness of the core ring 5 provides a certain distance between the first filter screen 6 and the second filter screen 7, so that a containing space is formed, a powder sample can be laid in advance, and atomic layer deposition powder materials are convenient.
Further, passageway handle 2 has two, the one end of two passageway handles 2 all with bottom plate 8 fixed connection, all be provided with gas channel 3 in two passageway handles 2, be provided with gas outlet on the bottom plate 8, gas outlet sets up in second filter screen 7 below, gas channel 3's one end is linked together with gas outlet, gas channel 3's the other end is linked together with the source hole of the precursor source of atomic layer deposition equipment, the precursor source can get into the below of second filter screen 7 through gas channel 3, then be drawn between first filter screen 6 and the second filter screen 7 and lay in advance the powder sample reaction between with first filter screen 6 and second filter screen 7. It is noted that the number of the channel handles 2 may be one or more according to actual needs.
Further, the clamp for atomic layer deposition further comprises an interface ring 4, the interface ring 4 is fixed at the lower part of the channel handle 2, the interface ring 4 is communicated with the other end of the gas channel 3, the interface ring 4 can be set to different numbers according to different interfaces of the atomic layer deposition equipment, and the number of the interface rings 4 below each channel handle 2 can be set to be one or more.
S02, communicating a channel handle of the clamp with a source outlet hole of the atomic layer deposition equipment;
further, in step S02, communicating the channel handle of the clamp with the source hole of the ald apparatus specifically includes:
the fixture is flatly placed on the substrate of the atomic layer deposition equipment, the level of the fixture is kept, the precursor sprayed from the source outlet holes can uniformly pass through the second filter screen 7, the gas channel 3 is communicated with the source outlet holes of the atomic layer deposition equipment, and the precursor sprayed from the source outlet holes can reach the position below the second filter screen 7 along the gas channel 3.
And S03, spraying a precursor source to the clamp, introducing carrier gas, and reacting to obtain a deposited film.
Further, in step S03, the injecting the precursor source to the jig specifically includes:
the intermittent injection of the source outlet communicated with each channel handle is controlled, or the intermittent injection of the source outlet communicated with each interface ring on one channel handle is controlled, because different deposition experiments adopt different materials and the time required by deposition is different, the intermittent injection of the source outlet is controlled according to the different materials of the precursor sources injected by the source outlet, and the reaction time is accurately controlled.
Further, in step S03, the introducing the carrier gas specifically includes exhausting air above the first filter to lower the air pressure above the first filter, and then inflating air below the second filter, wherein the air drives the precursor source to move upward and enter between the first filter and the second filter. Air is pumped to enable the air pressure in the inner space of the atomic layer deposition equipment to reach the air pressure required by the experiment, meanwhile, due to the existence of low pressure, the powder sample is filled between the first filter screen and the second filter screen, the introduced carrier gas upwards conveys the precursor source, and the precursor source enters the space between the first filter screen and the second filter screen and fully reacts with the powder sample to obtain a deposited film.
Example 2
As another embodiment of the present invention, a method for using a chuck for atomic layer deposition according to the present embodiment includes the following steps:
s01, fixing a 1000-mesh second filter screen 7 on a bottom plate 8, then uniformly spreading zinc sulfide powder on the second filter screen 7, fixing a core ring 5 on the bottom plate 8 in a threaded manner, compacting the second filter screen 7 by using the core ring 5, then laying a 800-mesh first filter screen 6 on the core ring 5, then connecting a cover plate 1 and the core ring 5 in a threaded manner, and compacting the first filter screen 6 by using the cover plate 1.
S02, placing the clamp into a cavity of the atomic layer deposition equipment, flatly placing the clamp on a substrate of the atomic layer deposition equipment, keeping the clamp horizontal, and then communicating the gas channel 3 with a source outlet hole of the atomic layer deposition equipment.
S03, starting the atomic layer deposition equipment to perform atomic deposition, adjusting the process pressure of the atomic layer deposition equipment to 0.1Torr, adjusting the cavity temperature to 100 ℃, and using N2As carrier gas, the precursor source sprayed from the source outlet is trimethylaluminum, the purging time of the precursor source is 20s, the purging time of water is 20s, when a plurality of interface rings 4 are communicated with the source outlet of the atomic layer deposition equipment, each interface ring 4 is intermittently sprayed, and after the spraying is finished, 25nm Al is obtained2O3And depositing a film.
Example 3
As another example of the present invention, unlike example 2, in step S01, the second screen 7 was 1200 mesh, the first screen 6 was 500 mesh, and the powder sample was lanthanum oxide powder.
In step S03, the process pressure of the atomic layer deposition equipment is adjusted to 0.15Torr, the cavity temperature is 200 ℃, Ar is used as carrier gas, the precursor source is titanium tetrachloride, the purging time of the precursor source is 60S, and the purging time of ammonia is 60S, so that the 100nm TiN deposition film is obtained.
Example 4
As still another example of the present invention, unlike example 2, in step S01, the second mesh 7 was 800 mesh, the first mesh 6 was 1000 mesh, and the powder sample was tantalum nitride powder.
In step S03, the process pressure of the ALD apparatus is adjusted to 0.2Torr and the chamber temperature is 170 ℃, and N is used2As a carrier gas, the precursor source is ferrocene, the purging time of the precursor source is 45s, and the purging time of water is 45s, so that a Fe2O3 deposition film with the thickness of 30nm is obtained.
Example 5
As still another embodiment of the present invention, unlike embodiment 2, in step S01, the second screen 7 is 1200 mesh, the first screen 6 is 500 mesh, and the powder sample is a platinum metal powder.
In step S03, the process pressure of the ALD apparatus is adjusted to 0.1Torr and the chamber temperature is 150 ℃, and N is used2As a carrier gas, the precursor source was hexafluoroacetylacetonatocopper, the purge time of the precursor source was 80s, and the purge time of diethyl zinc was 80s, to obtain a 60nm Cu deposited film.
It can be seen from the comprehensive examples 2-4 that water, ammonia gas and diethyl zinc are the reactants in the corresponding examples, and are selected according to different reactions, and the purge time of the precursor source is the same as the purge time of the reaction medium in the atomic layer deposition equipment, so as to ensure the sufficient reaction of the precursor source and the powder sample.
The embodiment of the specification provides a clamp for atomic layer deposition and a using method thereof, the first filter screen and the second filter screen are arranged at intervals, the first filter screen is arranged above the second filter screen, a powder material can be paved between the first filter screen and the second filter screen, a gas channel is arranged in a channel handle, the gas channel can enable a precursor source to enter the lower part of the second filter screen through the gas channel, and then the precursor source reacts with a powder sample paved in advance between the first filter screen and the second filter screen to obtain a desired deposition film, and one clamp can be suitable for various different film deposition experiments and has good practicability.
Claims (7)
1. A fixture for atomic layer deposition comprising a base plate (8), a cover plate (1), a first screen (6), a second screen (7) and at least one channel handle (2), wherein:
the cover plate (1) is detachably arranged on the bottom plate (8), through holes are formed in the cover plate (1) and the bottom plate (8), and the two through holes are arranged oppositely;
the first filter screen (6) is arranged in the through hole of the cover plate (1), the second filter screen (7) is arranged in the through hole of the bottom plate (8), and the first filter screen (6) and the second filter screen (7) are spaced;
be provided with the gas outlet on bottom plate (8), the gas outlet sets up the below of second filter screen (7), passageway handle (2) are fixed on bottom plate (8), be provided with gas passage (3) in passageway handle (2), the one end intercommunication of gas passage (3) has at least one interface ring (4), the other end of gas passage (3) with the gas outlet is linked together.
2. The chuck for atomic layer deposition according to claim 1, further comprising a core ring (5), the core ring (5) being arranged between the base plate (8) and the cover plate (1).
3. The clamp for atomic layer deposition according to claim 2, characterized in that the base plate (8) and the cover plate (1) each comprise an outer ring and an inner ring, the outer ring is arranged outside the inner ring, the through hole is arranged in the middle of the inner ring, the thickness of the inner ring is smaller than the thickness of the outer ring, the core ring (5) is arranged between the inner ring of the base plate (8) and the inner ring of the cover plate (1), the core ring (5) is detachably connected with both the outer rings, the second screen (7) is arranged between the inner ring of the base plate (8) and the core ring (5), and the first screen (6) is arranged between the inner ring of the cover plate (1) and the core ring (5).
4. The clamp for atomic layer deposition according to claim 1, wherein the number of perforations of the first screen (6) and the second screen (7) is between 200 mesh and 3000 mesh.
5. A method for producing a deposited film, comprising the steps of:
loading a powder sample between the first screen and the second screen in the holder of any one of claims 1-4;
communicating a channel handle of the clamp with a source outlet hole of the atomic layer deposition equipment;
and spraying a precursor source to the fixture, introducing carrier gas, and reacting to obtain a deposited film.
6. The method for producing a deposited film according to claim 5, wherein the spraying a precursor source to the jig specifically comprises:
controlling intermittent injection of the source outlet holes communicated with the channel handles;
controlling intermittent ejection of the source holes communicated with the interface rings on one channel handle.
7. The method for producing a deposited film according to claim 5, wherein the introducing the carrier gas specifically comprises:
pumping air above the first filter screen to reduce the air pressure above the first filter screen;
and inflating the gas below the second filter screen, wherein the gas drives the precursor source to move upwards to enter between the first filter screen and the second filter screen.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910066631.6A CN109536926B (en) | 2019-01-24 | 2019-01-24 | Clamp for atomic layer deposition and method for producing deposited film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910066631.6A CN109536926B (en) | 2019-01-24 | 2019-01-24 | Clamp for atomic layer deposition and method for producing deposited film |
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| CN109536926A CN109536926A (en) | 2019-03-29 |
| CN109536926B true CN109536926B (en) | 2021-04-13 |
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| CN110042366A (en) * | 2019-04-18 | 2019-07-23 | 泰州隆基乐叶光伏科技有限公司 | Fixture, apparatus for atomic layer deposition and technique |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105750541A (en) * | 2016-04-13 | 2016-07-13 | 西安近代化学研究所 | Method for reducing electrostatic spark sensitivity of zirconium powder by utilizing ALD (Atomic Layer Deposition) coating layer |
| CN105951058A (en) * | 2016-05-26 | 2016-09-21 | 华中科技大学 | Nanoparticle space isolation atomic layer deposition equipment and method based on fluidized bed |
| CN106011791A (en) * | 2016-07-07 | 2016-10-12 | 王禄荣 | Atomic layer deposition device capable of enabling powder surface to be evenly coated and method of device |
| CN108359960A (en) * | 2018-03-30 | 2018-08-03 | 华中科技大学 | A kind of fast atoms layer depositing device of micro-nano granules |
| CN108715998A (en) * | 2018-06-14 | 2018-10-30 | 华中科技大学 | A kind of apparatus for atomic layer deposition for high-volume micro-nano granules package |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10513462B2 (en) * | 2015-09-11 | 2019-12-24 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Transparent nanocomposite ceramics built from core/shell nanoparticles |
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- 2019-01-24 CN CN201910066631.6A patent/CN109536926B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105750541A (en) * | 2016-04-13 | 2016-07-13 | 西安近代化学研究所 | Method for reducing electrostatic spark sensitivity of zirconium powder by utilizing ALD (Atomic Layer Deposition) coating layer |
| CN105951058A (en) * | 2016-05-26 | 2016-09-21 | 华中科技大学 | Nanoparticle space isolation atomic layer deposition equipment and method based on fluidized bed |
| CN106011791A (en) * | 2016-07-07 | 2016-10-12 | 王禄荣 | Atomic layer deposition device capable of enabling powder surface to be evenly coated and method of device |
| CN108359960A (en) * | 2018-03-30 | 2018-08-03 | 华中科技大学 | A kind of fast atoms layer depositing device of micro-nano granules |
| CN108715998A (en) * | 2018-06-14 | 2018-10-30 | 华中科技大学 | A kind of apparatus for atomic layer deposition for high-volume micro-nano granules package |
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