CN109536926A - A method of fixture and production deposition film for atomic layer deposition - Google Patents
A method of fixture and production deposition film for atomic layer deposition Download PDFInfo
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- CN109536926A CN109536926A CN201910066631.6A CN201910066631A CN109536926A CN 109536926 A CN109536926 A CN 109536926A CN 201910066631 A CN201910066631 A CN 201910066631A CN 109536926 A CN109536926 A CN 109536926A
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- strainer
- bottom plate
- fixture
- atomic layer
- layer deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of fixture for atomic layer deposition and the methods for producing deposition film, the fixture includes bottom plate, cover board, first strainer, second strainer and channel handle, cover board is removably disposed on the bottom plate, through-hole is provided on cover board and bottom plate, two through-holes are oppositely arranged, first strainer is arranged in the through-hole of cover board, second strainer is arranged in the through-hole of bottom plate, first strainer and the second strainer are separately, gas vent is provided on bottom plate, the lower section of the second strainer is arranged in gas vent, channel handle is fixed on bottom plate, gas passage is provided in the handle of channel, one end of gas passage communicates with the outside world, the other end of gas passage is connected with gas vent, precursor source can be reacted with the powder sample being laid in advance, desired deposition film is obtained in the second strainer inner surface, an and fixture It can be adapted for a variety of different film sedimentation experiments, have good practicability.
Description
Technical field
The present invention relates to atomic layer deposition dusty material technical field, in particular to a kind of fixture for atomic layer deposition
And the method for production deposition film.
Background technique
Currently, technique for atomic layer deposition is mainly used in microelectronics and field of nanometer material technology, be in chip manufacturing proces most
One of common film production method.The thickness that deposition film can be accurately controlled using technique for atomic layer deposition, can deposit
Material includes oxide, nitride, fluoride, metal simple-substance, carbide, sulfide, organic/inorganic composite film layer etc..
The base material of present technique for atomic layer deposition is mainly the material of some sheets, threadiness and some irregular shapes
Material, for dusty material, there are no too many to be related to for present technique for atomic layer deposition, is primarily due to dusty material and is difficult to admittedly
It is fixed, how the fixed bottleneck used as dusty material in the field of dusty material yet there are no to powder material so far
The related process technologies that material carries out atomic deposition occur.
Summary of the invention
Technical problem to be solved by the present invention lies in overcome the deficiencies of the prior art and provide can for dusty material into
A kind of method of fixture and production deposition film for atomic layer deposition of row atomic deposition.
In order to achieve the above purpose, present invention employs the following technical solutions:
In a general aspect, a kind of fixture for atomic layer deposition, including bottom plate, cover board, the first strainer, are provided
Two strainers and channel handle, in which:
Cover board is removably disposed on the bottom plate, and through-hole is provided on cover board and bottom plate, and two through-holes are opposite to be set
It sets；
First strainer is arranged in the through-hole of cover board, and the second strainer is arranged in the through-hole of bottom plate, the first strainer and second
Strainer is separately；
Gas vent is provided on bottom plate, the lower section of the second strainer is arranged in gas vent, and channel handle is fixed on bottom plate
On, gas passage is provided in the handle of channel, one end of gas passage communicates with the outside world, and the other end and gas of gas passage go out
Mouth is connected.
It preferably, further include interface rings for the fixture of atomic layer deposition, interface rings are fixed on channel lower portion thereof, interface
Ring is connected with one end of gas passage.
Preferably, the quantity of the interface rings of the lower section of channel handle is at least one.
It preferably, further include core ring for the fixture of atomic layer deposition, core ring is arranged between bottom plate and cover board.
Preferably, bottom plate and cover board include outer ring and inner ring, and outer ring is arranged on the outside of inner ring, are through-hole in the middle part of inner ring,
Inner ring thicknesses are less than the thickness of outer ring, and core ring is arranged between the inner ring of bottom plate and the inner ring of cover board, and core ring is outer with two simultaneously
Ring is detachably connected, and the second strainer is arranged between the inner ring of bottom plate and core ring, and the inner ring and core of cover board is arranged in the first strainer
Between ring.
Preferably, the eyelet number of the first strainer and the second strainer is 200 mesh~3000 mesh.
Preferably, the quantity of channel handle is at least one.
In a general aspect, a kind of method producing deposition film is provided, comprising the following steps:
Powder sample is fitted between the first strainer and the second strainer in above-mentioned fixture；
The channel handle of fixture is connected with the source aperture that goes out of atomic layer deposition apparatus；
Precursor source is sprayed to fixture and is passed through carrier gas, and reaction obtains deposition film.
Preferably, it is specifically included to fixture injection precursor source:
The source aperture intermittence that goes out being connected with each channel handle is controlled to spray；
The source aperture intermittence that goes out being connected with each interface rings on a channel handle is controlled to spray.
Preferably, carrier gas is passed through to specifically include:
It is evacuated above the first strainer, makes air pressure decline above the first strainer；
It is inflated below the second strainer, gas drives precursor source to move upwards into the first strainer and the second strainer
Between.
The present invention provides a kind of fixture for atomic layer deposition and the methods for producing deposition film, due to the first strainer
Separately with the second strainer, the first strainer is arranged above the second strainer, can be laid between the first strainer and the second strainer
Dusty material, and gas passage is provided in the handle of channel, gas passage can make precursor source enter the by gas passage
Then the lower section of two strainers is reacted between the first strainer and the second strainer with the powder sample being laid in advance, obtain desired
Deposition film, and a fixture can be adapted for a variety of different film sedimentation experiments, have good practicability.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is the positive structure diagram of the fixture for atomic layer deposition of the invention；
Fig. 2 is the schematic cross-sectional view of the fixture for atomic layer deposition of the invention；
Fig. 3 is the application method flow chart of the fixture for atomic layer deposition of the invention.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear
Chu is fully described by, it is clear that described embodiment is only a part of the embodiments of the present invention, rather than whole implementation
Example.Based on the embodiments of the present invention, obtained by those of ordinary skill in the art without making creative efforts
Every other embodiment, shall fall within the protection scope of the present invention.
Embodiment 1
Fig. 3 is the application method flow chart of the fixture for atomic layer deposition of the invention, as shown in figure 3, the present invention is real
It applies example and discloses a kind of application method of fixture for atomic layer deposition, comprising the following steps:
S01, powder sample is fitted between the first strainer and the second strainer in fixture；
In step S01, used fixture is fixture for atomic layer deposition, the fixture include bottom plate 8, cover board 1,
First strainer 6, the second strainer 7 and channel handle 2, in which:
Fig. 1 is the positive structure diagram of the fixture for atomic layer deposition of the invention, and Fig. 2 is of the invention for original
The schematic cross-sectional view of the fixture of sublayer deposition, combined with Figure 1 and Figure 2, bottom plate 8 and cover board 1 is positioned opposite and mutual abutting, bottom
Plate 8 and cover board 1 are annular shape, i.e. the inside of cover board 1 forms first through hole, and the inside of bottom plate 8 forms the second through-hole, and two
A through-hole is coaxially arranged, also, the ring body of bottom plate 8 and cover board 1 is divided into outer ring and inner ring, and outer ring and inner ring are integrally manufactured,
Inner ring thicknesses are less than the thickness of outer ring, i.e. outer ring and inner ring junction is formed ladder-like, and the outer end face phase of outer ring and inner ring
Concordantly, outer ring be more than the part of inner ring inner peripheral surface on be provided with screw thread, the inner face of the outer ring of bottom plate 8 and cover board 1 is mutual
It abuts, there are certain spacing between bottom plate 8 and the inner ring of cover board 1, core ring 5 is arranged between bottom plate 8 and the inner ring of cover board 1
Inside spacing, and external screw thread is provided on the outer circumference surface of core ring 5, the internal screw thread on the outer ring of bottom plate 8 and cover board 1 and core ring
External screw thread is provided on 5 outer circumference surface to be connected, is connected through a screw thread, and bottom plate 8 and cover board 1 can tighten together.
Further, for the fixture of atomic layer deposition prepare substrate include but is not limited to aluminium, stainless steel, silicon carbide or
The materials such as graphite, the main function of these materials are not react with the powder deposited is needed.
Further, the eyelet number of the first strainer 6 and the second strainer 7 is 200 mesh~3000 mesh, the setting of the second strainer 7
In the second through-hole of bottom plate 8, i.e., the second strainer 7 is located between the inner ring and core ring 5 of bottom plate 8, and the first strainer 6 is arranged in cover board
In 1 first through hole, i.e., the first strainer 6 is located between the inner ring and core ring 5 of cover board 1, passes through core ring 5 and bottom plate 8 and cover board 1
Be connected with each other, the first strainer 6 and the second strainer 7 can be fastened on inside fixture respectively, and core ring 5 itself with a thickness of the
Certain spacing is provided between one strainer 6 and the second strainer 7, forms accommodation space, powder sample can be laid in advance, side
Just atomic layer deposition dusty material.
Further, there are two channel handles 2, one end of two channel handles 2 is fixedly connected with bottom plate 8, and two logical
It is provided with gas passage 3 in road handle 2, gas vent is provided on bottom plate 8, gas vent is arranged below the second strainer 7,
One end of gas passage 3 is connected with gas vent, the precursor source of the other end and atomic layer deposition apparatus of gas passage 3
Source aperture is connected out, and precursor source can enter the lower section of the second strainer 7 by gas passage 3, is then drawn into the first strainer 6
And second react the powder sample between the first strainer 6 and the second strainer 7 with being laid in advance between strainer 7.It is worth noting
, the quantity of channel handle 2 can be set according to actual needs one or more.
It further, further include interface rings 4 for the fixture of atomic layer deposition, interface rings 4 are fixed under channel handle 2
Portion, interface rings 4 are connected with the other end of gas passage 3, and interface rings 4 can according to the difference of the interface of atomic layer deposition apparatus
To be arranged to different numbers, the quantity of the interface rings 4 of the lower section of each channel handle 2 can be set to one or more.
S02, the channel handle of fixture is connected with the source aperture that goes out of atomic layer deposition apparatus；
Further, in step S02, the channel handle of the fixture is connected with the source aperture that goes out of atomic layer deposition apparatus
It is logical to specifically include:
It is placed on fixture is smooth on the substrate of atomic layer deposition apparatus, the level of holding jig, it is ensured that go out source aperture and eject
The precursor source come can uniformly pass through the second strainer 7, and by the source aperture phase out of gas passage 3 and atomic layer deposition apparatus
Connection, the lower section of the second strainer 7 can be reached along gas passage 3 by using the precursor source that source aperture ejects.
S03, precursor source is sprayed to fixture and is passed through carrier gas, reaction obtains deposition film.
Further, it in step S03, is specifically included to fixture injection precursor source:
It controls the source aperture intermittence that goes out being connected with each channel handle to spray, or in control and a channel handle
What each interface rings were connected goes out the injection of source aperture intermittence, since the material that different sedimentation experiments is selected is different, needed for deposition
Time it is also not identical, therefore the material for controlling out the precursor source of source aperture injection as needed is different, needs to control out source aperture
Intermittence injection, accurately controls the time of reaction.
Further, it in step S03, is passed through carrier gas and is specifically included in above the first strainer and be evacuated, make the first filter
Online side's air pressure decline, is then inflated below the second strainer, and gas drives precursor source to move upwards into the first filter
Between net and the second strainer.Pumping tests required air pressure so that the inner space air pressure of atomic layer deposition apparatus reaches, meanwhile,
Due to the presence of low pressure, powder sample is full of between the first strainer and the second strainer, and the carrier gas being passed through transports precursor source upwards
It send, so that precursor source enters between the first strainer and the second strainer, sufficiently reacts to obtain deposition film with powder sample.
Embodiment 2
As another embodiment of the present invention, the application method of the fixture for atomic layer deposition of the present embodiment, including
Following steps:
S01,1000 the second strainers of purpose 7 are fixed on bottom plate 8, zinc sulfide powder is uniformly then laid in second
On strainer 7, core ring 5 is spirally connected and is fixed on bottom plate 8, second strainer 7 is compressed using core ring 5, then filters 800 purposes first
Net 6 is laid on core ring 5, and then cover board 1 and core ring 5 are spirally connected, and compresses the first strainer 6 using cover board 1.
S02, fixture is put into the chamber of atomic layer deposition apparatus, by the smooth lining for being placed on atomic layer deposition apparatus of fixture
On bottom, then gas passage 3 is connected by the level of holding jig with the source aperture that goes out of atomic layer deposition apparatus.
S03, starting atomic layer deposition apparatus carry out atomic deposition, and the operation pressure of the equipment of atomic layer deposition is adjusted to
0.1Torr, cavity temperature are adjusted to 100 DEG C, use N2As carrier gas, the precursor source that source aperture ejects out is trimethyl aluminium,
The purge time of precursor source is 20s, and the purge time of water is 20s, and ought have multiple interface rings 4 and atomic layer deposition apparatus
Go out source aperture when being connected, the intermittent injection of each interface rings 4 after the completion of injection, obtains the Al of 25nm2O3Deposition film.
Embodiment 3
As another embodiment of the present invention, as different from Example 2, in step S01, the second strainer 7 is 1200 mesh,
First strainer 6 is 500 mesh, and powder sample is lanthanum oxide powder.
In step S03, the operation pressure of the equipment of atomic layer deposition is adjusted to 0.15Torr, and cavity temperature is 200 DEG C, uses
For Ar as carrier gas, precursor source is titanium tetrachloride, and the purge time of precursor source is 60s, and the purge time of ammonia is 60s, is obtained
To the TiN deposition film of 100nm.
Embodiment 4
As another embodiment of the present invention, as different from Example 2, in step S01, the second strainer 7 is 800 mesh,
First strainer 6 is 1000 mesh, and powder sample is tantalum nitride powder.
In step S03, the operation pressure of the equipment of atomic layer deposition is adjusted to 0.2Torr, and cavity temperature is 170 DEG C, uses
N2As carrier gas, precursor source is ferrocene, and the purge time of precursor source is 45s, and the purge time of water is 45s, is obtained
The Fe2O3 deposition film of 30nm.
Embodiment 5
As another embodiment of the present invention, as different from Example 2, in step S01, the second strainer 7 is 1200 mesh,
First strainer 6 is 500 mesh, and powder sample is metal platinum powder.
In step S03, the operation pressure of the equipment of atomic layer deposition is adjusted to 0.1Torr, and cavity temperature is 150 DEG C, uses
N2As carrier gas, precursor source is hexafluoroacetylacetone copper, and the purge time of precursor source is 80s, when the purging of diethyl zinc
Between be 80s, obtain the Cu deposition film of 60nm.
Integrated embodiment 2- embodiment 4 it is found that water, ammonia and diethyl zinc are respectively the reactant in corresponding embodiment,
Chosen according to different reactions, and in the equipment of the purge time of precursor source and atomic layer deposition reaction medium purging
Time is identical, it is ensured that the abundant reaction of precursor source and powder sample.
The embodiment of this specification provides a kind of fixture and its application method for atomic layer deposition, due to the first filter
Separately, the first strainer is arranged above the second strainer for net and the second strainer, can spread between the first strainer and the second strainer
If dusty material, and gas passage is provided in the handle of channel, gas passage can be such that precursor source enters by gas passage
Then the lower section of second strainer is reacted with the powder sample being laid in advance between the first strainer and the second strainer, is wanted
Deposition film, and a fixture can be adapted for a variety of different film sedimentation experiments, have good practicability.
Claims (10)
1. a kind of fixture for atomic layer deposition, which is characterized in that including bottom plate (8), cover board (1), the first strainer (6),
Two strainers (7) and channel handle (2), in which:
The cover board (1) is removably disposed on the bottom plate (8), is provided on the cover board (1) and the bottom plate (8)
Through-hole, two through-holes are oppositely arranged；
First strainer (6) is arranged in the through-hole of the cover board (1), and second strainer (7) is arranged in the bottom plate (8)
Through-hole in, first strainer (6) and the second strainer (7) are separately；
It is provided with gas vent on the bottom plate (8), the gas vent setting is described in the lower section of second strainer (7)
Channel handle (2) is fixed on the bottom plate (8), is provided with gas passage (3) in the channel handle (2), and the gas is logical
The one end in road (3) communicates with the outside world, and the other end of the gas passage (3) is connected with the gas vent.
2. the fixture according to claim 1 for atomic layer deposition, which is characterized in that it further include interface rings (4), it is described
Interface rings (4) are fixed on channel handle (2) lower part, and the interface rings (4) are connected with one end of the gas passage (3)
It is logical.
3. the fixture according to claim 2 for atomic layer deposition, which is characterized in that channel handle (2) lower part
The interface rings (4) quantity be at least one.
4. the fixture according to claim 1 for atomic layer deposition, which is characterized in that further include core ring (5), the core
Ring (5) is arranged between the bottom plate (8) and the cover board (1).
5. the fixture according to claim 4 for atomic layer deposition, which is characterized in that the bottom plate (8) and the lid
Plate (1) includes outer ring and inner ring, and the outer ring is arranged on the outside of the inner ring, is the through-hole in the middle part of the inner ring, described
Inner ring thicknesses are less than the thickness of the outer ring, inner ring and the cover board (1) of the core ring (5) setting in the bottom plate (8)
Between inner ring, the core ring (5) is detachably connected with two outer rings simultaneously, and second strainer (7) is arranged at the bottom
Between the inner ring of plate (8) and the core ring (5), inner ring and the core ring of the first strainer (6) setting in the cover board (1)
(5) between.
6. the fixture according to claim 1 for atomic layer deposition, which is characterized in that first strainer (6) and institute
The eyelet number for stating the second strainer (7) is 200 mesh~3000 mesh.
7. the fixture according to claim 1 for atomic layer deposition, which is characterized in that the number of the channel handle (2)
Amount is at least one.
8. a kind of method for producing deposition film, which comprises the following steps:
Powder sample is fitted between the first strainer and the second strainer in any one of claim 1-7 fixture；
The channel handle of the fixture is connected with the source aperture that goes out of atomic layer deposition apparatus；
Precursor source is sprayed to fixture and is passed through carrier gas, and reaction obtains deposition film.
9. the method for production deposition film according to claim 1, which is characterized in that described to spray precursor source to fixture
It specifically includes:
The source aperture intermittence that goes out being connected with each channel handle is controlled to spray；
The source aperture intermittence that goes out being connected with each interface rings on a channel handle is controlled to spray.
10. the method for production deposition film according to claim 8, which is characterized in that described to be passed through carrier gas and specifically include:
It is evacuated above the first strainer, makes air pressure decline above the first strainer；
Be inflated below the second strainer, gas drive precursor source move upwards into the first strainer and the second strainer it
Between.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910066631.6A CN109536926B (en) | 2019-01-24 | 2019-01-24 | Clamp for atomic layer deposition and method for producing deposited film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910066631.6A CN109536926B (en) | 2019-01-24 | 2019-01-24 | Clamp for atomic layer deposition and method for producing deposited film |
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| Publication Number | Publication Date |
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| CN109536926A true CN109536926A (en) | 2019-03-29 |
| CN109536926B CN109536926B (en) | 2021-04-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110042366A (en) * | 2019-04-18 | 2019-07-23 | 泰州隆基乐叶光伏科技有限公司 | Fixture, apparatus for atomic layer deposition and technique |
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| CN105951058A (en) * | 2016-05-26 | 2016-09-21 | 华中科技大学 | Nanoparticle space isolation atomic layer deposition equipment and method based on fluidized bed |
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| CN109536926B (en) | 2021-04-13 |
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