CN104109844B - A kind of processing technology of the tantalum nitride membrane based on technique for atomic layer deposition - Google Patents
A kind of processing technology of the tantalum nitride membrane based on technique for atomic layer deposition Download PDFInfo
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Abstract
The present invention provides the processing technology of a kind of tantalum nitride membrane based on technique for atomic layer deposition, including step: step 1), substrate surface is carried out NH3Cement Composite Treated by Plasma；Step 2), form metal tantalum presoma in described substrate surface；Step 3), carries out NH to the substrate surface being formed with metal tantalum presoma3Cement Composite Treated by Plasma forms tantalum nitride thin layer；Step 4), carries out Ar Cement Composite Treated by Plasma to described tantalum nitride thin layer；Step 5), carries out step 1) ~ step 4) with the first number of cycles；Step 6), rotates predetermined angle by described substrate；Step 7), carries out step 1) ~ step 4) with the second number of cycles.The present invention is by increasing NH3Cement Composite Treated by Plasma substrate, Ar Cement Composite Treated by Plasma tantalum nitride thin layer and by the step of rotating substrate, it is possible to efficiently reduce the hole in tantalum nitride membrane, it is thus achieved that tantalum nitride membrane of good performance.Present invention process step is simple, it is adaptable to commercial production.
Description
Technical field
The invention belongs to field of semiconductor fabrication processes, particularly relate to the processing technology of a kind of tantalum nitride membrane based on technique for atomic layer deposition.
Background technology
Atomic layer deposition (atomiclayerdeposition, ALD), also known as ald or atomic layer epitaxy (atomiclayerepitaxy), be by vaporous precursors pulse is alternately passed into reactor and on depositing base chemisorbed reaction and form a kind of method of deposition film.This method is proposed by Finland scientist and for the development of polycrystalline fluorescent material ZnS:Mn and amorphous Al 2O3 dielectric film, these materials are for flat faced display at first.The surface chemical process of complexity and low deposition velocity is related to, until the eighties in last century, this technology of middle and late stage did not make substantial breakthroughs due to this technique.But to the mid-90 in 20th century, people to the interest of this technology in continuous reinforcement, this constantly reduces mainly due to the demand for development device of microelectronics and Deep submicron chip technology and the size of material, and the depth-width ratio in device is continuously increased, the several nanometer scale of thickness decreasing value of so used material.Therefore the advantage of technique for atomic layer deposition just embodies, and as monoatomic layer gradually deposits, the extremely uniform thickness of deposition layer and excellent concordance etc. just embody, and the slow problem of deposition velocity is just inessential.
From the principle, ALD obtains product by chemical reaction, but it is all different from traditional CVD with in the quality of deposition layer in the requirement of deposition reaction principle, deposition reaction condition, in conventional CVD process process, chemical vapors constantly passes in vacuum chamber, the many factors such as therefore this deposition process is continuous print, thickness and the uniformity of temperature, pressure, gas flow and flowing, the time of deposition thin film are relevant；In ALD technical process, then it is that different pre-reaction materials is alternately sent in reative cell with the form of gas pulses, is not therefore a continuous print technical process.For traditional depositing operation, ALD has obvious advantage in the uniformity of rete, step coverage rate and THICKNESS CONTROL etc..
In some applications, need that there is the surface of internal cavity plated film of very big L/D ratio, when the limit, draw ratio can reach 15 even 20, traditional film plating process is adopted to realize, and technique for atomic layer deposition forms adsorption layer at substrate surface by then passing through, further by reacting generation thin film, thus there is the advantage of uniqueness in this respect, it is possible to the surface of internal cavity at big L/D ratio forms thin film in uniform thickness.
Technique for atomic layer deposition is due to the highly controllable type (thickness, composition and structure) of its deposition parameter, and excellent deposition uniformity and concordance make it have a wide range of applications potentiality in fields such as micro-nano electronics and nano materials.The material that technique for atomic layer deposition makes can be adopted at present to include: oxide, nitride, fluoride, metal, carbide, composite construction, sulfide, nano thin-layer etc..
Along with the development of semiconductor technology, the application of tantalum nitride membrane material is valued by the people gradually.Fact proved, adopt technique for atomic layer deposition can obtain the good tantalum nitride membrane material of performance.The preparation method of existing a kind of tantalum nitride membrane, generally first substrate is being exposed in metal tantalum presoma, so that described substrate surface absorption layer of metal tantalum presoma, then pass through N and H plasma described metal tantalum presoma is processed, then repeat above procedure, ultimately form tantalum nitride membrane.But, the tantalum nitride membrane that this method prepares would generally form very many small holes, is substantially reduced its consistency and final performance, as shown in Figure 1.
Therefore it provides a kind of manufacture method that can effectively reduce tantalum nitride membrane pore quantity is necessary.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide the processing technology of a kind of tantalum nitride membrane based on technique for atomic layer deposition, for solving the problem that in prior art, tantalum nitride membrane Hole too much causes performance to reduce.
For achieving the above object and other relevant purposes, the present invention provides the processing technology of a kind of tantalum nitride membrane based on technique for atomic layer deposition, at least comprises the following steps:
Step 1), substrate surface is carried out NH3Cement Composite Treated by Plasma；
Step 2), form metal tantalum presoma in described substrate surface；
Step 3), the substrate surface being formed with metal tantalum presoma is carried out NH3Cement Composite Treated by Plasma forms tantalum nitride thin layer；
Step 4), described tantalum nitride thin layer is carried out Ar Cement Composite Treated by Plasma；
Step 5), carry out step 1 with the first number of cycles)～step 4)；
Step 6), described substrate is rotated predetermined angle；
Step 7), carry out step 1 with the second number of cycles)～step 4), form tantalum nitride membrane.
As a kind of preferred version of processing technology of the tantalum nitride membrane based on technique for atomic layer deposition of the present invention, described metal tantalum presoma is metal tantalum organic compound.
As a kind of preferred version of processing technology of the tantalum nitride membrane based on technique for atomic layer deposition of the present invention, step 4) in, the air pressure of Ar Cement Composite Treated by Plasma is 0.1mtorr-10torr, and power is 100～2500w, and gas flow is 100～3000sccm.
As a kind of preferred version of processing technology of the tantalum nitride membrane based on technique for atomic layer deposition of the present invention, described first number is 0～20 time.
As a kind of preferred version of processing technology of the tantalum nitride membrane based on technique for atomic layer deposition of the present invention, described second number is 1～20 time.
As a kind of preferred version of processing technology of the tantalum nitride membrane based on technique for atomic layer deposition of the present invention, described predetermined angle is not less than 10 degree.
As it has been described above, the present invention provides the processing technology of a kind of tantalum nitride membrane based on technique for atomic layer deposition, including step: step 1), substrate surface is carried out NH3 Cement Composite Treated by Plasma；Step 2), form metal tantalum presoma in described substrate surface；Step 3), the substrate surface being formed with metal tantalum presoma is carried out NH3Cement Composite Treated by Plasma forms tantalum nitride thin layer；Step 4), described tantalum nitride thin layer is carried out Ar Cement Composite Treated by Plasma；Step 5), carry out step 1 with the first number of cycles)～step 4)；Step 6), described substrate is rotated predetermined angle；Step 7), carry out step 1 with the second number of cycles)～step 4).The present invention is by increasing NH3 Cement Composite Treated by Plasma substrate, Ar Cement Composite Treated by Plasma tantalum nitride thin layer and step substrate rotated, it is possible to efficiently reduce the hole in tantalum nitride membrane, it is thus achieved that tantalum nitride membrane of good performance.Present invention process step is simple, it is adaptable to commercial production.
Accompanying drawing explanation
Fig. 1 is shown as the scanning electron microscope schematic diagram of the tantalum nitride membrane made by employing technique for atomic layer deposition of the prior art, it can be seen that in this tantalum nitride membrane, distribution has substantial amounts of hole.
Fig. 2 be shown with the present invention based on the tantalum nitride membrane scanning electron microscope schematic diagram made by the processing technology of the tantalum nitride membrane of technique for atomic layer deposition, can be seen that, adopt the tantalum nitride membrane consistency made by the present invention very high, substantially do not observe hole.
Fig. 3 is shown as the fabrication processing schematic diagram of the tantalum nitride membrane based on technique for atomic layer deposition of the present invention.
Element numbers explanation
S11 step 1)
S12 step 2)
S13 step 3)
S14 step 4)
S15 step 5)
S16 step 6)
S17 step 7)
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art the content disclosed by this specification can understand other advantages and effect of the present invention easily.The present invention can also be carried out by additionally different detailed description of the invention or apply, and the every details in this specification based on different viewpoints and application, can also carry out various modification or change under the spirit without departing from the present invention.
Refer to Fig. 2～Fig. 3.It should be noted that, the diagram provided in the present embodiment only illustrates the basic conception of the present invention in a schematic way, then assembly that in graphic, only display is relevant with the present invention but not component count when implementing according to reality, shape and size drafting, during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its assembly layout kenel is likely to increasingly complex.
As shown in Figure 2 to 3, the present embodiment provides the processing technology of a kind of tantalum nitride membrane based on technique for atomic layer deposition, at least comprises the following steps:
As it is shown on figure 3, first carry out step 1) S11, substrate surface is carried out NH3Cement Composite Treated by Plasma.
Specifically, described substrate is placed in the equipment that can carry out technique for atomic layer deposition, then produces N and H plasma with certain air velocity, air pressure and power and described substrate is processed.
Then step 2 is carried out) S12, form metal tantalum presoma in described substrate surface.
Exemplarily, described metal tantalum presoma is metal tantalum organic compound.Certainly, in other embodiments, described metal tantalum presoma can also be the tantalum inorganic compound such as metal tantalum halogenide, it is also possible to is other all intended metal tantalum presomas, however it is not limited to described herein enumerate several.
Specifically, described substrate is exposed in metal tantalum presoma, forms metal tantalum presoma one layer ultra-thin by the mode adsorbed in described substrate surface.
Then step 3 is carried out) S13, the substrate surface being formed with metal tantalum presoma is carried out NH3Cement Composite Treated by Plasma forms tantalum nitride thin layer.
After metal tantalum presoma is adsorbed, adopt NH3Gas produces N and H plasma, and N plasma and metal tantalum react generation tantalum nitride, and H plasma is removed with the organic principle in metal tantalum presoma, and the most described substrate surface forms one layer one the tantalum nitride thin layer to several atomic layer level thickness.
Step 4) S14, described tantalum nitride thin layer is carried out Ar Cement Composite Treated by Plasma.
Exemplarily, the air pressure of Ar Cement Composite Treated by Plasma is 0.1mtorr-10torr, and power is 100～2500w, and gas flow is 100～3000sccm.
In a concrete implementation process, the air pressure of Ar Cement Composite Treated by Plasma is 2torr, and power is 1000w, and gas flow is 1000sccm.
This step can effectively reduce the size and number of tantalum nitride thin layer Hole, after Ar Cement Composite Treated by Plasma, it is possible to obtain tantalum nitride thin layer of good performance.
Step 5) S15, carry out step 1 with the first number of cycles)～step 4).
Exemplarily, described first number is 0～20 time.Illustrate for cycle-index for 1 time below.
Step 1)～4) formed after ground floor tantalum nitride thin layer, the substrate that this has tantalum nitride thin layer proceeds following steps:
The substrate surface with ground floor tantalum nitride thin layer is carried out NH3Cement Composite Treated by Plasma；
Metal tantalum presoma is formed in the substrate surface with ground floor tantalum nitride thin layer；
The ground floor tantalum nitride thin layer surface being formed with metal tantalum presoma is carried out NH3Cement Composite Treated by Plasma forms second layer tantalum nitride thin layer；
Described second layer tantalum nitride thin layer is carried out Ar Cement Composite Treated by Plasma.
If cycle-index is repeatedly, then repeat with above-mentioned rule, it is possible to determine cycle-index according to the thickness of final required tantalum nitride membrane.
Certainly, in the process repeated, it is possible to suitably adjust the parameters such as air-flow air pressure power, the requirement practically necessary to realize technique.
Step 6) S16, described substrate is rotated predetermined angle.
Exemplarily, described predetermined angle is not less than 10 degree, and namely in the present embodiment, described predetermined angle is between 10～350 degree, and in a concrete implementation process, described predetermined angle is 45 degree.
Step 7) S17, carry out step 1 with the second number of cycles)～step 4), form tantalum nitride membrane.
Specifically, the cyclic process of this step such as step 5) described in.
Exemplarily, described second number is 1～20 time.
After described substrate being rotated to an angle, it is recycled for step 1)～step 4), it is possible to substantially reduce the quantity at final hole in tantalum nitride membrane.
Described cycle-index can be determined according to the thickness of required tantalum nitride membrane, is not limited to number of times restriction recited herein.
Fig. 2 be shown with the present invention based on the tantalum nitride membrane scanning electron microscope schematic diagram made by the processing technology of the tantalum nitride membrane of technique for atomic layer deposition, can be seen that, adopt the tantalum nitride membrane consistency made by the present invention very high, substantially do not observe hole.
In sum, the present invention provides the processing technology of a kind of tantalum nitride membrane based on technique for atomic layer deposition, including step: step 1), substrate surface is carried out NH3 Cement Composite Treated by Plasma；Step 2), form metal tantalum presoma in described substrate surface；Step 3), the substrate surface being formed with metal tantalum presoma is carried out NH3Cement Composite Treated by Plasma forms tantalum nitride thin layer；Step 4), described tantalum nitride thin layer is carried out Ar Cement Composite Treated by Plasma；Step 5), carry out step 1 with the first number of cycles)～step 4)；Step 6), described substrate is rotated predetermined angle；Step 7), carry out step 1 with the second number of cycles)～step 4).The present invention is by increasing NH3 Cement Composite Treated by Plasma substrate, Ar Cement Composite Treated by Plasma tantalum nitride thin layer and step substrate rotated, it is possible to efficiently reduce the hole in tantalum nitride membrane, it is thus achieved that tantalum nitride membrane of good performance.Present invention process step is simple, it is adaptable to commercial production.So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
Above-described embodiment is illustrative principles of the invention and effect thereof only, not for the restriction present invention.Above-described embodiment all under the spirit and category of the present invention, can be modified or change by any those skilled in the art.Therefore, art has usually intellectual such as modifying without departing from all equivalences completed under disclosed spirit and technological thought or change, must be contained by the claim of the present invention.
Claims (6)
1. the processing technology based on the tantalum nitride membrane of technique for atomic layer deposition, it is characterised in that at least comprise the following steps:
Step 1), carries out NH to substrate surface3Cement Composite Treated by Plasma；
Step 2), form metal tantalum presoma in described substrate surface；
Step 3), carries out NH to the substrate surface being formed with metal tantalum presoma3Cement Composite Treated by Plasma forms tantalum nitride thin layer；
Step 4), carries out Ar Cement Composite Treated by Plasma to described tantalum nitride thin layer；
Step 5), carries out step 1)～step 4) with the first number of cycles；
Step 6), rotates predetermined angle by described substrate；
Step 7), carries out step 1)～step 4) with the second number of cycles, forms tantalum nitride membrane.
2. the processing technology of the tantalum nitride membrane based on technique for atomic layer deposition according to claim 1, it is characterised in that: described metal tantalum presoma is metal tantalum organic compound.
3. the processing technology of the tantalum nitride membrane based on technique for atomic layer deposition according to claim 1, it is characterized in that: in step 4), the air pressure of Ar Cement Composite Treated by Plasma is 0.1mtorr-10torr, and power is 100～2500w, and gas flow is 100～3000sccm.
4. the processing technology of the tantalum nitride membrane based on technique for atomic layer deposition according to claim 1, it is characterised in that: described first number is 0～20 time.
5. the processing technology of the tantalum nitride membrane based on technique for atomic layer deposition according to claim 1, it is characterised in that: described second number is 1～20 time.
6. the processing technology of the tantalum nitride membrane based on technique for atomic layer deposition according to claim 1, it is characterised in that: described predetermined angle is not less than 10 degree.
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| CN1806325A (en) * | 2003-06-13 | 2006-07-19 | 应用材料公司 | Integration of ALD tantalum nitride for copper metallization |
| CN101036217A (en) * | 2004-06-02 | 2007-09-12 | 国际商业机器公司 | PE-ALD of TaN diffusion barrier region on low-K materials |
| CN101595550A (en) * | 2006-10-31 | 2009-12-02 | 朗姆研究公司 | The manufacture method of barrier layer with composition for copper metallization of variation |
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| CN1806325A (en) * | 2003-06-13 | 2006-07-19 | 应用材料公司 | Integration of ALD tantalum nitride for copper metallization |
| CN101036217A (en) * | 2004-06-02 | 2007-09-12 | 国际商业机器公司 | PE-ALD of TaN diffusion barrier region on low-K materials |
| CN101595550A (en) * | 2006-10-31 | 2009-12-02 | 朗姆研究公司 | The manufacture method of barrier layer with composition for copper metallization of variation |
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