CN104109844A - Preparation technology for tantalum nitride membrane based on atomic layer deposition technology - Google Patents
Preparation technology for tantalum nitride membrane based on atomic layer deposition technology Download PDFInfo
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- CN104109844A CN104109844A CN201310138674.3A CN201310138674A CN104109844A CN 104109844 A CN104109844 A CN 104109844A CN 201310138674 A CN201310138674 A CN 201310138674A CN 104109844 A CN104109844 A CN 104109844A
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Abstract
A provided preparation technology for a tantalum nitride membrane based on an atomic layer deposition technology comprises steps: step 1) performing NH3 plasma processing on the surface of a base; step 2) forming a metal tantalum precursor on the surface of the base; step 3) performing NH3 plasma processing on the surface of the base with the metal tantalum precursor, so as to form a tantalum nitride thin layer; step 4) performing Ar plasma processing on the tantalum nitride thin layer; step 5) repeating the step 1) to the step 4) for a first number; step 6) rotating the base at a preset angle; and step 7) repeating the step 1) to the step 4) for a second number. By adding the steps of processing the base by using NH3 plasma, processing the tantalum nitride thin layer by using Ar plasma and rotating the base, openings and holes in the tantalum nitride thin layer are effectively reduced, and the tantalum nitride membrane with good performances is obtained. The technology is simple in steps and suitable for industrial production.
Description
Technical field
The invention belongs to field of semiconductor fabrication processes, particularly relate to a kind of manufacture craft of the tantalum nitride membrane based on technique for atomic layer deposition.
Background technology
Atomic layer deposition (atomic layer deposition, ALD), claim again ald or atomic layer epitaxy (atomic layer epitaxy), be by the pulse of gas phase presoma is alternately passed into reactor and on depositing base chemisorption reaction form a kind of method of deposited film.The initial Shi You Finland scientist of this method proposes and for the development of polycrystalline fluorescent material ZnS:Mn and amorphous Al 2O3 insulating film, these materials are for flat-panel monitor.Because this technique relates to complicated surface chemistry process and low sedimentation velocity, until this technology of the middle and later periods eighties in last century does not make substantial breakthroughs.But to the mid-90s in 20th century, people to the interest of this technology in continuous reinforcement, this is mainly constantly to reduce due to the demand for development device of microelectronics and Deep submicron chip technology and the size of material, and depth-width ratio in device constantly increases, the several nanometer scale of thickness reduction value of the material that uses like this.Therefore the advantage of technique for atomic layer deposition just embodies, and as monoatomic layer successively deposits, settled layer extremely uniformly thickness and excellent consistence etc. just embodies, and the slow problem of sedimentation velocity is just inessential.
From the principle, ALD obtains resultant by chemical reaction, but all different from traditional CVD qualitatively at the requirement of deposition reaction principle, deposition reaction condition and settled layer, in traditional C VD technological process, chemical vapors constantly passes in vacuum chamber, therefore this deposition process is continuous, and the many factors such as the thickness of deposit film and temperature, pressure, gas flow and mobile homogeneity, time are relevant; In ALD technological process, be that different pre-reaction materials is alternately sent in reaction chamber with the form of gas pulses, be not therefore a continuous technological process.For traditional depositing operation, ALD has obvious advantage at the aspects such as homogeneity, step coverage rate and gauge control of rete.
In some applications, the very surface of internal cavity plated film of big L/D ratio need to be there is, in the situation of the limit, length-to-diameter ratio can reach 15 even 20, adopt traditional film coating method to realize, and technique for atomic layer deposition is owing to being by form adsorption layer at substrate surface, further pass through reaction film former, thereby there is in this respect unique advantage, can form at the surface of internal cavity of big L/D ratio the film of even thickness.
Technique for atomic layer deposition is due to the height controllable type (thickness, composition and structure) of its deposition parameter, and excellent deposition uniformity and consistence make it in fields such as micro-nano electronics and nano materials, have a wide range of applications potentiality.The material that can adopt at present technique for atomic layer deposition to make comprises: oxide compound, nitride, fluorochemical, metal, carbide, composite structure, sulfide, nano thin-layer etc.
Along with the development of semiconductor technology, the application of tantalum nitride membrane material is valued by the people gradually.Fact proved, adopt technique for atomic layer deposition can obtain the good tantalum nitride membrane material of performance.The preparation method of existing a kind of tantalum nitride membrane, general first substrate being exposed in metal tantalum presoma, so that described substrate surface absorption layer of metal tantalum presoma, then by N and H plasma body, described metal tantalum presoma is processed, then repeat above process, finally form tantalum nitride membrane.Yet the tantalum nitride membrane that this method prepares can form very many small holes conventionally, greatly reduce its density and final performance, as shown in Figure 1.
Therefore, provide a kind of making method that can effectively reduce tantalum nitride membrane pore quantity to be necessary.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of manufacture craft of the tantalum nitride membrane based on technique for atomic layer deposition, the problem that too much causes performance to reduce for solving prior art tantalum nitride membrane Hole.
For achieving the above object and other relevant objects, the invention provides a kind of manufacture craft of the tantalum nitride membrane based on technique for atomic layer deposition, at least comprise the following steps:
Step 1), carries out NH to substrate surface
3cement Composite Treated by Plasma;
Step 2), in described substrate surface, form metal tantalum presoma;
Step 3), carries out NH to being formed with the substrate surface of metal tantalum presoma
3cement Composite Treated by Plasma forms tantalum nitride thin layer;
Step 4), carries out Ar Cement Composite Treated by Plasma to described tantalum nitride thin layer;
Step 5), loops step 1)～step 4) with first number;
Step 6), by described substrate rotation predetermined angle;
Step 7), loops step 1)～step 4) with second number, forms tantalum nitride membrane.
As a kind of preferred version of the manufacture craft of the tantalum nitride membrane based on technique for atomic layer deposition of the present invention, described metal tantalum presoma is metal tantalum organic compound.
As a kind of preferred version of the manufacture craft of the tantalum nitride membrane based on technique for atomic layer deposition of the present invention, in step 4), the air pressure of Ar Cement Composite Treated by Plasma is 0.1mtorr-10torr, and power is 100～2500w, and gas flow is 100～3000sccm.
As a kind of preferred version of the manufacture craft of the tantalum nitride membrane based on technique for atomic layer deposition of the present invention, described first number is 0～20 time.
As a kind of preferred version of the manufacture craft of the tantalum nitride membrane based on technique for atomic layer deposition of the present invention, described second number is 1～20 time.
As a kind of preferred version of the manufacture craft of the tantalum nitride membrane based on technique for atomic layer deposition of the present invention, described predetermined angle is not less than 10 degree.
As mentioned above, the invention provides a kind of manufacture craft of the tantalum nitride membrane based on technique for atomic layer deposition, comprise step: step 1), substrate surface is carried out to NH3 Cement Composite Treated by Plasma; Step 2), in described substrate surface, form metal tantalum presoma; Step 3), carries out NH to being formed with the substrate surface of metal tantalum presoma
3cement Composite Treated by Plasma forms tantalum nitride thin layer; Step 4), carries out Ar Cement Composite Treated by Plasma to described tantalum nitride thin layer; Step 5), loops step 1)～step 4) with first number; Step 6), by described substrate rotation predetermined angle; Step 7), loops step 1)～step 4) with second number.The present invention, by increasing the substrate of NH3 Cement Composite Treated by Plasma, Ar Cement Composite Treated by Plasma tantalum nitride thin layer and by the step of rotation substrate, can effectively reducing the hole in tantalum nitride membrane, obtains well behaved tantalum nitride membrane.Processing step of the present invention is simple, is applicable to industrial production.
Accompanying drawing explanation
Fig. 1 is shown as the scanning electron microscope schematic diagram of the tantalum nitride membrane of employing technique for atomic layer deposition made of the prior art, can find out, is distributed with a large amount of holes in this tantalum nitride membrane.
Fig. 2 is shown as the tantalum nitride membrane scanning electron microscope schematic diagram of the manufacture craft made that adopts the tantalum nitride membrane based on technique for atomic layer deposition of the present invention, can find out, adopt the tantalum nitride membrane density of made of the present invention very high, substantially do not observe hole.
Fig. 3 is shown as the fabrication processing schematic diagram of the tantalum nitride membrane based on technique for atomic layer deposition of the present invention.
Element numbers explanation
S11 step 1)
S12 step 2)
S13 step 3)
S14 step 4)
S15 step 5)
S16 step 6)
S17 step 7)
Embodiment
Below, by specific specific examples explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification sheets.The present invention can also be implemented or be applied by other different embodiment, and the every details in this specification sheets also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present invention.
Refer to Fig. 2～Fig. 3.It should be noted that, the diagram providing in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy and only show with assembly relevant in the present invention in graphic but not component count, shape and size drafting while implementing according to reality, during its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
As shown in Figure 2 to 3, the present embodiment provides a kind of manufacture craft of the tantalum nitride membrane based on technique for atomic layer deposition, at least comprises the following steps:
As shown in Figure 3, first carry out step 1) S11, substrate surface is carried out to NH
3cement Composite Treated by Plasma.
Particularly, described substrate is placed in to the equipment that can carry out technique for atomic layer deposition, then with certain gas velocity, air pressure and power generation N and H plasma body, described substrate is processed.
Then carry out step 2) S12, in described substrate surface, form metal tantalum presoma.
As example, described metal tantalum presoma is metal tantalum organic compound.Certainly, in other embodiments, described metal tantalum presoma can be also the tantalum mineral compound such as metal tantalum halogenide, can be also the metal tantalum presoma of other all expections, is not limited to enumerate several described herein.
Particularly, described substrate is exposed in metal tantalum presoma, by the mode of adsorbing, in described substrate surface, forms the ultra-thin metal tantalum presoma of one deck.
Then carry out step 3) S13, to being formed with the substrate surface of metal tantalum presoma, carry out NH
3cement Composite Treated by Plasma forms tantalum nitride thin layer.
After metal tantalum presoma is adsorbed, adopt NH
3γ-ray emission N and H plasma body, N plasma body reacts with metal tantalum and generates tantalum nitride, and the organic composition in H plasma body and metal tantalum presoma is removed, and the most described substrate surface forms tantalum nitride thin layer to several atomic layer level thickness of one deck.
Step 4) S14, carries out Ar Cement Composite Treated by Plasma to described tantalum nitride thin layer.
As example, the air pressure of Ar Cement Composite Treated by Plasma is 0.1mtorr-10torr, and power is 100～2500w, and gas flow is 100～3000sccm.
In a concrete implementation process, the air pressure of Ar Cement Composite Treated by Plasma is 2torr, and power is 1000w, and gas flow is 1000sccm.
This step can effectively reduce the size and number of tantalum nitride thin layer Hole, after Ar Cement Composite Treated by Plasma, can obtain well behaved tantalum nitride thin layer.
Step 5) S15, loops step 1)～step 4) with first number.
As example, described first number is 0～20 time.The cycle index of take below describes as example as 1 time.
Step 1)～4) form after the first layer tantalum nitride thin layer, on this has the substrate of tantalum nitride thin layer, proceed following steps:
To thering is the substrate surface of the first layer tantalum nitride thin layer, carry out NH
3cement Composite Treated by Plasma;
In the substrate surface with the first layer tantalum nitride thin layer, form metal tantalum presoma;
To being formed with the first layer tantalum nitride thin layer surface of metal tantalum presoma, carry out NH
3cement Composite Treated by Plasma forms second layer tantalum nitride thin layer;
Described second layer tantalum nitride thin layer is carried out to Ar Cement Composite Treated by Plasma.
If cycle index, for repeatedly, repeats with above-mentioned rule, can determine cycle index according to the thickness of final required tantalum nitride membrane.
Certainly, in the process repeating, can suitably adjust the parameters such as air-flow air pressure power, to realize the actual needed requirement of technique.
Step 6) S16, by described substrate rotation predetermined angle.
As example, described predetermined angle is not less than 10 degree, and in the present embodiment, described predetermined angle is that between 10～350 degree,, in a concrete implementation process, described predetermined angle is 45 degree.
Step 7) S17, loops step 1)～step 4) with second number, forms tantalum nitride membrane.
Particularly, the working cycle of this step is as described in step 5).
As example, described second number is 1～20 time.
After described substrate is rotated to an angle, step 1)～step 4) is carried out in recirculation, can obviously be reduced in the quantity of final hole in tantalum nitride membrane.
Described cycle index can be determined according to the thickness of required tantalum nitride membrane, is not limited thereto the number of times restriction of enumerating in place.
Fig. 2 is shown as the tantalum nitride membrane scanning electron microscope schematic diagram of the manufacture craft made that adopts the tantalum nitride membrane based on technique for atomic layer deposition of the present invention, can find out, adopt the tantalum nitride membrane density of made of the present invention very high, substantially do not observe hole.
In sum, the invention provides a kind of manufacture craft of the tantalum nitride membrane based on technique for atomic layer deposition, comprise step: step 1), substrate surface is carried out to NH3 Cement Composite Treated by Plasma; Step 2), in described substrate surface, form metal tantalum presoma; Step 3), carries out NH to being formed with the substrate surface of metal tantalum presoma
3cement Composite Treated by Plasma forms tantalum nitride thin layer; Step 4), carries out Ar Cement Composite Treated by Plasma to described tantalum nitride thin layer; Step 5), loops step 1)～step 4) with first number; Step 6), by described substrate rotation predetermined angle; Step 7), loops step 1)～step 4) with second number.The present invention, by increasing the substrate of NH3 Cement Composite Treated by Plasma, Ar Cement Composite Treated by Plasma tantalum nitride thin layer and by the step of rotation substrate, can effectively reducing the hole in tantalum nitride membrane, obtains well behaved tantalum nitride membrane.Processing step of the present invention is simple, is applicable to industrial production.So the present invention has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all can, under spirit of the present invention and category, modify or change above-described embodiment.Therefore, such as in affiliated technical field, have and conventionally know that the knowledgeable, not departing from all equivalence modifications that complete under disclosed spirit and technological thought or changing, must be contained by claim of the present invention.
Claims (6)
1. a manufacture craft for the tantalum nitride membrane based on technique for atomic layer deposition, is characterized in that, at least comprises the following steps:
Step 1), carries out NH to substrate surface
3cement Composite Treated by Plasma;
Step 2), in described substrate surface, form metal tantalum presoma;
Step 3), carries out NH to being formed with the substrate surface of metal tantalum presoma
3cement Composite Treated by Plasma forms tantalum nitride thin layer;
Step 4), carries out Ar Cement Composite Treated by Plasma to described tantalum nitride thin layer;
Step 5), loops step 1)～step 4) with first number;
Step 6), by described substrate rotation predetermined angle;
Step 7), loops step 1)～step 4) with second number, forms tantalum nitride membrane.
2. the manufacture craft of the tantalum nitride membrane based on technique for atomic layer deposition according to claim 1, is characterized in that: described metal tantalum presoma is metal tantalum organic compound.
3. the manufacture craft of the tantalum nitride membrane based on technique for atomic layer deposition according to claim 1, it is characterized in that: in step 4), the air pressure of Ar Cement Composite Treated by Plasma is 0.1mtorr-10torr, and power is 100～2500w, and gas flow is 100～3000sccm.
4. the manufacture craft of the tantalum nitride membrane based on technique for atomic layer deposition according to claim 1, is characterized in that: described first number is 0～20 time.
5. the manufacture craft of the tantalum nitride membrane based on technique for atomic layer deposition according to claim 1, is characterized in that: described second number is 1～20 time.
6. the manufacture craft of the tantalum nitride membrane based on technique for atomic layer deposition according to claim 1, is characterized in that: described predetermined angle is not less than 10 degree.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110938820A (en) * | 2018-09-21 | 2020-03-31 | 斯沃奇集团研究和开发有限公司 | Method for enhancing the adhesion of a protective layer for preventing silver tarnishing on a substrate comprising a silver surface |
| CN113026000A (en) * | 2021-04-02 | 2021-06-25 | 泰杋科技股份有限公司 | Device and method for preparing tantalum nitride film by precursor coating gas protection laser |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1806325A (en) * | 2003-06-13 | 2006-07-19 | 应用材料公司 | Integration of ALD tantalum nitride for copper metallization |
| CN101036217A (en) * | 2004-06-02 | 2007-09-12 | 国际商业机器公司 | PE-ALD of TaN diffusion barrier region on low-K materials |
| WO2007111780A2 (en) * | 2006-03-20 | 2007-10-04 | Tokyo Electron Limited | METHOD OF PLASMA ENHANCED ATOMIC LAYER DEPOSITION OF TaC AND TaCN FILMS HAVING GOOD ADHESION TO COPPER |
| CN101595550A (en) * | 2006-10-31 | 2009-12-02 | 朗姆研究公司 | The manufacture method of barrier layer with composition for copper metallization of variation |
-
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- 2013-04-18 CN CN201310138674.3A patent/CN104109844B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1806325A (en) * | 2003-06-13 | 2006-07-19 | 应用材料公司 | Integration of ALD tantalum nitride for copper metallization |
| CN101036217A (en) * | 2004-06-02 | 2007-09-12 | 国际商业机器公司 | PE-ALD of TaN diffusion barrier region on low-K materials |
| WO2007111780A2 (en) * | 2006-03-20 | 2007-10-04 | Tokyo Electron Limited | METHOD OF PLASMA ENHANCED ATOMIC LAYER DEPOSITION OF TaC AND TaCN FILMS HAVING GOOD ADHESION TO COPPER |
| CN101595550A (en) * | 2006-10-31 | 2009-12-02 | 朗姆研究公司 | The manufacture method of barrier layer with composition for copper metallization of variation |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110938820A (en) * | 2018-09-21 | 2020-03-31 | 斯沃奇集团研究和开发有限公司 | Method for enhancing the adhesion of a protective layer for preventing silver tarnishing on a substrate comprising a silver surface |
| CN110938820B (en) * | 2018-09-21 | 2022-04-19 | 斯沃奇集团研究和开发有限公司 | Method for enhancing the adhesion of a protective layer for preventing silver tarnishing on a substrate comprising a silver surface |
| US11345993B2 (en) | 2018-09-21 | 2022-05-31 | The Swatch Group Research And Development Ltd | Method for enhancing the adhesion of a layer for the protection of silver against tarnishing on a substrate comprising a silver surface |
| CN113026000A (en) * | 2021-04-02 | 2021-06-25 | 泰杋科技股份有限公司 | Device and method for preparing tantalum nitride film by precursor coating gas protection laser |
| CN113026000B (en) * | 2021-04-02 | 2022-12-09 | 泰杋科技股份有限公司 | Device and method for preparing tantalum nitride film by precursor coating gas protection laser |
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