CN1171784C - Process for preparing nano carbon tube - Google Patents
Process for preparing nano carbon tube Download PDFInfo
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- CN1171784C CN1171784C CNB021109702A CN02110970A CN1171784C CN 1171784 C CN1171784 C CN 1171784C CN B021109702 A CNB021109702 A CN B021109702A CN 02110970 A CN02110970 A CN 02110970A CN 1171784 C CN1171784 C CN 1171784C
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- alumina formwork
- alumina
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Abstract
The present invention provides a process for preparing a nano silicon tube, which uses a chemical vapor deposition process. The process comprises the following steps that a plurality of alumina templates with the hole diameter of nano dimension are prepared; one plane of the alumina template is plated with a film by a magnetron sputtering method; a film plating material is elements of a third family and a fifth family or transition metal elements or gold, and the thickness of the plated film is 1 to 10000 nano; 3), the alumina templates which are plated with the films are placed into a quartz boat, and then, the quartz boat is placed into a vacuum and atmosphere dual purpose quartz tubular furnace to pump vacuum so that the vacuum degree of the tubular furnace is 1 to 100Pa; a furnace tube is heated so that the alumina templates reach the temperature of 100 to 1000 DEG C; 4) the mixed gas of silicane, hydrogen and argon or nitrogen is conveyed in the tubular furnace; and 5) silicon which is decomposed from the silicane is deposited in the nano dimension hole of the alumina template to form the nano silicon tube for 1 to 50 hours. The present invention has simple technology and finds out a new approach for preparing the nano silicon tube.
Description
Technical field
The present invention relates to the preparation method of semiconductor nano silicone tube.
Background technology
Nano carbon tube is meant that internal diameter is 5～100 nanometers, and length is 100～10000 nanometers, linear pattern or the shaped form tubule made by silicon materials.The structure of its tube wall can be monocrystalline, polycrystalline or unordered structure, also can be the symbiotic structure that above-mentioned three forms by arbitrary proportion.In recent years, people have found the physical properties that the bulk silicon material does not have on one dimension nano silicon material.Such as, become the semiconductor light emitting characteristic that direct energy band causes owing to can be with indirectly; The novel semi-conductor transport properties that the of one-dimensional of the quantum confinement that causes owing to low-dimensional, small size, quantum tunneling effect and P-N knot causes etc. are for the development of silicon materials brings new opportunity.It is found that, one dimension nano silicon material comprises that silicon nanowire has irreplaceable advantage with nano carbon tube on the device relevant with hi-tech development such as making quantum wire, single-electronic transistor, feds, atom-probe, especially have the compatibility of height with super large-scale integration technology, make the research of one dimension nano silicon material that profound significance more arranged.At present, silicon nanowire comes out, and nano carbon tube also is in the exploratory stage.
Summary of the invention
The preparation method who the purpose of this invention is to provide nano carbon tube.
The preparation method of the nano carbon tube that invention provides adopts chemical Vapor deposition process, and it may further comprise the steps:
1) preparation has the alumina formwork in several nano-scale apertures;
2) with the plane plated film of magnetron sputtering method to alumina formwork, Coating Materials is three, group-v element or transition metal or gold, and coating film thickness is 1～10000 nanometer;
3) alumina formwork that plated film is crossed is placed in the quartz boat, again quartz boat is put into a vacuum and the dual-purpose quartz tube furnace of atmosphere, vacuumizes, and making tube furnace vacuum tightness is 1～100Pa, furnace tubing, and making the alumina formwork temperature is 100～1000 ℃;
4) mixed gas of silane gas, hydrogen and argon gas or nitrogen is sent into tube furnace, each gas usage
Be respectively silane gas 1～50%
Hydrogen 1～50%
Argon gas or nitrogen 1～50%
The mixed gas total amount is 100%;
5) through 1～50 hour, the siliceous deposits that decomposes out from silane forms nano carbon tube in the holes of nano size of alumina formwork.
Test shows, changes coating film thickness, boiler tube vacuum tightness, and the consumptions of alumina formwork temperature and each gas etc. can change the performances such as length, degree of crystallinity of nano carbon tube.
Technology of the present invention is simple, for the preparation nano carbon tube is explored a new way.
Description of drawings
Fig. 1 is a nano carbon tube transmission electron microscope photo;
1 is that nano carbon tube tube chamber 2 is the nano carbon tube tube wall among the figure
3 is that Si 111 diffraction rings 4 of nano carbon tube are Si 220 diffraction rings of nano carbon tube
Fig. 2 is the high resolution transmission electron microscopy photo of nano carbon tube structural pipe wall.
Embodiment
Below by specific examples, further specify the preparation method of nano carbon tube, it comprises the steps:
1) preparation has the alumina formwork of several 5～100 nano apertures;
2) with the plane plated film of magnetron sputtering method at alumina formwork;
This routine Coating Materials is with gold, and thickness is 1000 nanometers, Coating Materials also can be all three, in group-v element or all transition metals one or more.
3) alumina formwork that plated film is crossed is placed in the quartz boat, again quartz boat is put into a vacuum and the dual-purpose quartz tube furnace of atmosphere, vacuumizes, and making tube furnace vacuum tightness is 50Pa, furnace tubing, and making the alumina formwork temperature is 600 ℃;
4) mixed gas of silane gas, hydrogen and argon gas is sent into tube furnace, each gas usage is respectively
Silane gas 20%
Hydrogen 30%
Argon gas 50%;
5) through 5 hours, the siliceous deposits that decomposes out from silane forms nano carbon tube in the holes of nano size of alumina formwork.The pattern of the nano carbon tube of preparing is seen shown in Figure 1, (amplifying 170,000 times), lattice as shown in Figure 2, spacing 0.315nm.
Claims (1)
1. the preparation method of nano carbon tube is characterized in that adopting chemical Vapor deposition process, and it may further comprise the steps:
1) preparation has the alumina formwork in several nano-scale apertures;
2) with the plane plated film of magnetron sputtering method to alumina formwork, Coating Materials is three, group-v element or transition metal or gold, and coating film thickness is 1～10000 nanometer;
3) alumina formwork that plated film is crossed is placed in the quartz boat, again quartz boat is put into a vacuum and the dual-purpose quartz tube furnace of atmosphere, vacuumizes, and making tube furnace vacuum tightness is 1～100Pa, furnace tubing, and making the alumina formwork temperature is 100～1000 ℃;
4) mixed gas of silane gas, hydrogen and argon gas or nitrogen is sent into tube furnace, each gas usage is respectively silane gas 1～50%
Hydrogen 1～50%
Argon gas or nitrogen 1～50%
The mixed gas total amount is 100%;
5) through 1～50 hour, the siliceous deposits that decomposes out from silane forms nano carbon tube in the holes of nano size of alumina formwork.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021109702A CN1171784C (en) | 2002-03-05 | 2002-03-05 | Process for preparing nano carbon tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021109702A CN1171784C (en) | 2002-03-05 | 2002-03-05 | Process for preparing nano carbon tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1382627A CN1382627A (en) | 2002-12-04 |
| CN1171784C true CN1171784C (en) | 2004-10-20 |
Family
ID=4741340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021109702A Expired - Fee Related CN1171784C (en) | 2002-03-05 | 2002-03-05 | Process for preparing nano carbon tube |
Country Status (1)
| Country | Link |
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| CN (1) | CN1171784C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060105105A1 (en) * | 2004-11-12 | 2006-05-18 | Memc Electronic Materials, Inc. | High purity granular silicon and method of manufacturing the same |
| CN100336722C (en) * | 2005-04-08 | 2007-09-12 | 厦门大学 | One-dimensional ring shaped Nano silicon material and preparation |
| CN100421215C (en) * | 2005-07-21 | 2008-09-24 | 上海交通大学 | Method for preparing high electron mobility hydrogenated nano-crystalline silicon thin films |
| CN101284667B (en) * | 2008-05-29 | 2010-12-15 | 复旦大学 | Preparation method for nano-tube |
| CN102976328A (en) * | 2012-12-24 | 2013-03-20 | 复旦大学 | Preparation method of one-dimensional silicon nano material with controllable appearance |
| DE102014210086A1 (en) * | 2014-05-27 | 2015-12-03 | Robert Bosch Gmbh | Silicon particles with a microorganism-shaped cavity |
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2002
- 2002-03-05 CN CNB021109702A patent/CN1171784C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1382627A (en) | 2002-12-04 |
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