CN1382627A - Process for preparing nano carbon tube - Google Patents
Process for preparing nano carbon tube Download PDFInfo
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- CN1382627A CN1382627A CN 02110970 CN02110970A CN1382627A CN 1382627 A CN1382627 A CN 1382627A CN 02110970 CN02110970 CN 02110970 CN 02110970 A CN02110970 A CN 02110970A CN 1382627 A CN1382627 A CN 1382627A
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- gas
- alumina formwork
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- carbon tube
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Abstract
A process for preparing silicon nanotubes by gas-phase chemical deposition method includes preparing alumina template with nanoholes, plating film on one surface of alumina template by magnetically controlled sputter, loading said template in a quartz utensil, putting the quartz utensil in a quartz tube type furnace, vacuumizing to 1-100 Pa, heating to 100-1000 deg.C, introducing the gas mixture of silane, hydrogen and argon or nitrogen to the furnace, and depositing for 1-50 hr to form silicon nanotubes in said nanoholes on template.
Description
Technical field
The present invention relates to the preparation method of semiconductor nano silicone tube.
Background technology
Nano carbon tube is meant that internal diameter is 5～100 nanometers, and length is 100～10000 nanometers, linear pattern or the shaped form tubule made by silicon materials.The structure of its tube wall can be monocrystalline, polycrystalline or unordered structure, also can be the symbiotic structure that above-mentioned three forms by arbitrary proportion.In recent years, people have found the physical properties that the bulk silicon material does not have on one dimension nano silicon material.Such as, become the semiconductor light emitting characteristic that direct energy band causes owing to can be with indirectly; The novel semi-conductor transport properties that the of one-dimensional of the quantum confinement that causes owing to low-dimensional, small size, quantum tunneling effect and P-N knot causes etc. are for the development of silicon materials brings new opportunity.It is found that, one dimension nano silicon material comprises that silicon nanowire has irreplaceable advantage with nano carbon tube on the device relevant with hi-tech development such as making quantum wire, single-electronic transistor, feds, atom-probe, especially have the compatibility of height with super large-scale integration technology, make the research of one dimension nano silicon material that profound significance more arranged.At present, silicon nanowire comes out, and nano carbon tube also is in the exploratory stage.
Summary of the invention
The preparation method who the purpose of this invention is to provide nano carbon tube.
The preparation method of the nano carbon tube that invention provides adopts chemical Vapor deposition process, and it may further comprise the steps:
1) preparation has the alumina formwork in several nano-scale apertures;
2) with the plane plated film of magnetron sputtering method to alumina formwork, Coating Materials is three, group-v element or transition metal or gold, and coating film thickness is 1～10000 nanometer;
3) alumina formwork that plated film is crossed is placed in the quartz boat, again quartz boat is put into a vacuum and the dual-purpose quartz tube furnace of atmosphere, vacuumizes, and making tube furnace vacuum tightness is 1～100Pa, furnace tubing, and making the alumina formwork temperature is 100～1000 ℃;
4) mixed gas of silane gas, hydrogen and argon gas or nitrogen is sent into tube furnace, each gas usage is respectively silane gas 1～50% hydrogen, 1～50% argon gas or nitrogen 1～50% mixed gas total amount is 100%;
5) through 1～50 hour, the siliceous deposits that decomposes out from silane forms nano carbon tube in the holes of nano size of alumina formwork.
Test shows, changes coating film thickness, boiler tube vacuum tightness, and the consumptions of alumina formwork temperature and each gas etc. can change the performances such as length, degree of crystallinity of nano carbon tube.
Technology of the present invention is simple, for the preparation nano carbon tube is explored a new way.
Description of drawings
Fig. 1 is a nano carbon tube transmission electron microscope photo;
1 is that nano carbon tube tube chamber 2 is the nano carbon tube tube wall among the figure
3 is that Si 111 diffraction rings 4 of nano carbon tube are Si 220 diffraction rings of nano carbon tube
Fig. 2 is the high resolution transmission electron microscopy photo of nano carbon tube structural pipe wall.
Embodiment
Below by specific examples, further specify the preparation method of nano carbon tube, it comprises the steps:
1) preparation has the alumina formwork in several 5～100 interior meter apertures;
2) with the plane plated film of magnetron sputtering method at alumina formwork;
This routine Coating Materials is with gold, and thickness is 1000 nanometers, Coating Materials also can be all three, in group-v element or all transition metals one or more.
3) alumina formwork that plated film is crossed is placed in the quartz boat, again quartz boat is put into a vacuum and the dual-purpose quartz tube furnace of atmosphere, vacuumizes, and making tube furnace vacuum tightness is 50Pa, furnace tubing, and making the alumina formwork temperature is 600 ℃;
4) mixed gas of silane gas, hydrogen and argon gas is sent into tube furnace, each gas usage is respectively silane gas 20% hydrogen 30% argon gas 50%;
5) through 5 hours, the siliceous deposits that decomposes out from silane forms nano carbon tube in the holes of nano size of alumina formwork.The pattern of the nano carbon tube of preparing is seen shown in Figure 1, (amplifying 170,000 times), lattice as shown in Figure 2, spacing 0.315nm.
Claims (1)
1. the preparation method of nano carbon tube is characterized in that adopting chemical Vapor deposition process, and it may further comprise the steps:
1) preparation has the alumina formwork in several nano-scale apertures;
2) with the plane plated film of magnetron sputtering method to alumina formwork, Coating Materials is three, group-v element or transition metal or gold, and coating film thickness is 1～10000 nanometer;
3) alumina formwork that plated film is crossed is placed in the quartz boat, again quartz boat is put into a vacuum and the dual-purpose quartz tube furnace of atmosphere, vacuumizes, and making tube furnace vacuum tightness is 1～100Pa, furnace tubing, and making the alumina formwork temperature is 100～1000 ℃;
4) mixed gas of silane gas, hydrogen and argon gas or nitrogen is sent into tube furnace, each gas usage is respectively silane gas 1～50%
Hydrogen 1～50%
Argon gas or nitrogen 1～50%
The mixed gas total amount is 100%;
5) through 1～50 hour, the siliceous deposits that decomposes out from silane forms nano carbon tube in the holes of nano size of alumina formwork.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021109702A CN1171784C (en) | 2002-03-05 | 2002-03-05 | Process for preparing nano carbon tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021109702A CN1171784C (en) | 2002-03-05 | 2002-03-05 | Process for preparing nano carbon tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1382627A true CN1382627A (en) | 2002-12-04 |
| CN1171784C CN1171784C (en) | 2004-10-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021109702A Expired - Fee Related CN1171784C (en) | 2002-03-05 | 2002-03-05 | Process for preparing nano carbon tube |
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| CN (1) | CN1171784C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100336722C (en) * | 2005-04-08 | 2007-09-12 | 厦门大学 | One-dimensional ring shaped Nano silicon material and preparation |
| CN100421215C (en) * | 2005-07-21 | 2008-09-24 | 上海交通大学 | Method for preparing high electron mobility hydrogenated nano-crystalline silicon thin films |
| CN101284667B (en) * | 2008-05-29 | 2010-12-15 | 复旦大学 | Preparation method for nano-tube |
| CN101734664B (en) * | 2004-11-12 | 2012-10-31 | Memc电子材料有限公司 | High purity granular silicon and manufacturing method thereof |
| CN102976328A (en) * | 2012-12-24 | 2013-03-20 | 复旦大学 | Preparation method of one-dimensional silicon nano material with controllable appearance |
| CN106458606A (en) * | 2014-05-27 | 2017-02-22 | 罗伯特·博世有限公司 | Silicon particles with microorganism-shaped cavity |
-
2002
- 2002-03-05 CN CNB021109702A patent/CN1171784C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101734664B (en) * | 2004-11-12 | 2012-10-31 | Memc电子材料有限公司 | High purity granular silicon and manufacturing method thereof |
| CN100336722C (en) * | 2005-04-08 | 2007-09-12 | 厦门大学 | One-dimensional ring shaped Nano silicon material and preparation |
| CN100421215C (en) * | 2005-07-21 | 2008-09-24 | 上海交通大学 | Method for preparing high electron mobility hydrogenated nano-crystalline silicon thin films |
| CN101284667B (en) * | 2008-05-29 | 2010-12-15 | 复旦大学 | Preparation method for nano-tube |
| CN102976328A (en) * | 2012-12-24 | 2013-03-20 | 复旦大学 | Preparation method of one-dimensional silicon nano material with controllable appearance |
| CN106458606A (en) * | 2014-05-27 | 2017-02-22 | 罗伯特·博世有限公司 | Silicon particles with microorganism-shaped cavity |
| CN106458606B (en) * | 2014-05-27 | 2019-02-01 | 罗伯特·博世有限公司 | Silicon particle with microorganism shape cavity |
| US10283767B2 (en) | 2014-05-27 | 2019-05-07 | Robert Bosch Gmbh | Silicon particles having a cavity in the shape of a microorganism |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1171784C (en) | 2004-10-20 |
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