CN108394857A - A kind of preparation method of nucleocapsid GaN nano wire array - Google Patents
A kind of preparation method of nucleocapsid GaN nano wire array Download PDFInfo
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- CN108394857A CN108394857A CN201810106547.8A CN201810106547A CN108394857A CN 108394857 A CN108394857 A CN 108394857A CN 201810106547 A CN201810106547 A CN 201810106547A CN 108394857 A CN108394857 A CN 108394857A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
The present invention provides a kind of preparation methods of nucleocapsid GaN nano wire array, and GaN structural membranes are epitaxially grown on the substrate by epitaxy method；Mask layer is grown on the above-mentioned films, and mask layer is prepared into corresponding pattern；The nanostructure of steep side walls is formed in GaN structural membranes；The nanostructure of the etching steep side walls, forms the nano-wire array of the smooth queueing discipline of side wall；Diauxic growth is carried out on the GaN nano wire array of gained, obtains core-shell nano linear array.Method through the invention obtains the nucleocapsid GaN nano wire array that side wall is smooth, draw ratio is controllable.The method of the present invention is simple and practicable, is suitble to prepare with scale.It prepares gained core-shell nano linear array and can be widely applied to opto-electronic device and microelectronic component.
Description
Technical field
The invention belongs to electricity fields, are related to a kind of nano-wire array, specifically a kind of nucleocapsid GaN nano wire array
Preparation method.
Background technology
Nanotechnology is considered as one of three big science technologies of 21 century, wherein semiconductor nanowires are due to its uniqueness
One-dimensional Quantum structure, it is considered to be the basic structure of the following micro-nano device.GaN nano wire has excellent photoelectricity, piezoelectricity, quick
Sense and thermal stability have good application prospect in opto-electronic device and micro-nano electronic device.In recent years, GaN nanometers
The research work of line has made great progress, and is widely used in integrated circuit, transistor, laser, light emitting diode, single photon
The fields such as device, photocatalytic water and solar cell.However lack the controllable high quality core-shell nano linear array in draw ratio, position
Synthetic method seriously limits the functionization and industrialization of GaN nano wire device.The production method of nucleocapsid GaN nano wire is divided to two
Class：" from bottom to top " lithographic method of self-assembling growth method and " from top to bottom "." from bottom to top " self-assembled growth side
Method mainly has vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) and selection area
The methods of area deposition.But these methods are difficult to prepare high quality, ordered arrangement, the nucleocapsid GaN nano wire battle array containing different component
Row.Etching method uses sense coupling or anisotropic wet etch method more.By controlling mask and etching
Technique, the method for designing the extensive nucleocapsid GaN nano wire orthogonal array of controlledly synthesis.
Invention content
For above-mentioned technical problem in the prior art, the present invention provides a kind of preparations of nucleocapsid GaN nano wire array
Method, the preparation method of this nucleocapsid GaN nano wire array to solve method in the prior art be difficult to prepare it is high-quality
The technical issues of amount, ordered arrangement, nucleocapsid GaN nano wire array containing different component.
The present invention provides a kind of preparation methods of nucleocapsid GaN nano wire array, include the following steps：
1) GaN structural membranes are epitaxially grown on the substrate by epitaxy method；
2) mask layer is grown on the above-mentioned films, and mask layer is prepared into corresponding pattern；
3) nanostructure of steep side walls is formed in GaN structural membranes；
4) nanostructure of the etching steep side walls, forms the nano-wire array of the smooth queueing discipline of side wall；
5) in step 4）Diauxic growth is carried out on the GaN nano wire array of gained, obtains core-shell nano linear array.
Further, the mask layer is SiO2、SiNx, ZnO or Al2O3。
Further, mask layer is prepared into accordingly by ultraviolet photolithographic, electron beam lithography, dry etching or wet etching
Pattern.
Further, the size of the pattern is 10 nm-10 μm.
Further, in step 3）In, using the nano junction for being dry-etched in formation steep side walls in GaN base structural membrane
Structure.
Further, the dry etching is ion beam etching, inductively coupled plasma etching or reactive ion etching.
Further, in step 3）In, the steep of the nanostructure of steep side walls judges according to angle of the flank angle value.
Further, ranging from 45 ° -90 ° of angle of the flank angle value.
Further, in step 4）In, above-mentioned nanostructure is corroded using alkaline solution.
Further, in step 5）In, using chemical vapor deposition, metalorganic vapor phase chemical deposition, molecular beam outside
Prolong deposition, the method for hydride gas-phase epitaxy deposition or sputter deposition, in step 4）The GaN nano wire array of gained is enterprising
Row diauxic growth.
Further, in step 5）In, material that the diauxic growth uses for AlN, AlGaN, InGaN, InN, ZnO,
Or SiO2。
The present invention uses nonmetallic mask layer, and mask is made by lithography and etching technique, realizes the rule row of nano wire
Row and its position accurately control；Then, GaN nano wire array is formed using etching method, finally passes through further diauxic growth,
The nucleocapsid GaN nano wire array that side wall is smooth, draw ratio is controllable is made.This preparation method can be straight by controlling GaN nano wire
Diameter, length, position and arrangement mode control diameter, length, position and the arrangement mode of core-shell nano line.
The present invention is compared with prior art, and technological progress is significant.The preparation method of the present invention is of low cost, technique
Simply it is suitable for large-scale industrial production application.GaN nano wire rule is regularly arranged obtained by preparing, and side wall is smooth, and draw ratio can
Control, growth position is controllable, is suitble to make GaN nano-devices.Preparation process is introduced without other metal impurities, obtains high quality, length
Diameter is than controllable and controllable growth position nucleocapsid GaN nano wire array.
Method provided by the invention is simple and practicable, is generated suitable for high-volume and scientific experiment, preparation gained nucleocapsid are received
Nanowire arrays can be widely applied to opto-electronic device and microelectronic component.
Description of the drawings
Fig. 1 is the GaN base membrane structure schematic diagram being epitaxially grown on the substrate.
Fig. 2 is to prepare mask on extension GaN base film.
Fig. 3 is the GaN nanostructure schematic diagram of steep side walls.
Fig. 4 is the GaN nano wire array structure schematic diagram of the smooth queueing discipline of side wall.
Fig. 5 is nucleocapsid GaN nano wire array structure schematic diagram.
Wherein：1 is substrate material；2 be GaN；3 be SiO2Mask layer；4 be the other materials of diauxic growth.
Specific implementation mode
The diameter that embodiment 1 makes nano wire is less than 200 nm, is highly 4 μm of the nucleocapsid with quantum well structure
GaN nano wire array
Fig. 1 ~ 4 are the preparation flow figure of nucleocapsid GaN nano wire array, a kind of nucleocapsid GaN nano wire array preparation side of the invention
Method includes the following steps：
1) as shown in Figure 1, using metal organic vapors chemical deposition (MOCVD) method on Si substrates 1 epitaxial buffer layer, n- successively
GaN 2, overall thickness are about 6 μm；
2) 1 μ m-thick SiO is grown on epitaxial layer using CVD method2Mask layer 3 is prepared a diameter of by photoetching, ICP etching technics
5 μm of round mask pattern；
3) buffered oxide etch liquid BOE is used to corrode SiO2Mask layer 3, corrosion 5min 50s under the conditions of temperature is 22 DEG C
Prepare the mask that size is about 500 nm；
4) use ICP dry etch process etch GaN base epitaxial layer, ICP power 1000W, RF power 100W, gas use Cl2
30 sccm BCl310 sccm, 120 DEG C of etching temperature etch 6min, form the more steep GaN base nanostructure of side wall（Such as
Shown in Fig. 2）；
5) 2% KOH solution corrosion step 4 is used）Gained GaN base nanostructure, 65 DEG C of temperature corrode 2h, and it is smooth to form side wall
The GaN nano wire array structure 2 of queueing discipline（As shown in Figure 3）.
6) use MOCVD with step 5）The nano-wire array of preparation be substrate epitaxial grow GaN/InGaN quantum well layers and
P-GaN 4 prepares nucleocapsid GaN nano wire array（As shown in Figure 4）.
The above is the technical principle that the present invention applies and the equivalent change that specific example is done according to the concept of the present invention
It, should all be within the scope of the invention as long as change the spirit that scheme that it is used still is covered without departing from the description and the appended drawings.
Claims (11)
1. a kind of preparation method of nucleocapsid GaN nano wire array, it is characterised in that include the following steps：
1）It is epitaxially grown on the substrate GaN structural membranes by epitaxy method；
2）Mask layer is grown on the above-mentioned films, and mask layer is prepared into corresponding pattern；
3）The nanostructure of steep side walls is formed in GaN structural membranes；
4）The nanostructure of the etching steep side walls, forms the nano-wire array of the smooth queueing discipline of side wall；
5）In step 4）Diauxic growth is carried out on the GaN nano wire array of gained, obtains core-shell nano linear array.
2. a kind of preparation method of nucleocapsid GaN nanowire arrays according to claim 1, it is characterised in that：The mask layer
For SiO2、SiNx, ZnO or Al2O3。
3. a kind of preparation method of nucleocapsid GaN nanowire arrays according to claim 1, it is characterised in that：Pass through ultraviolet light
Mask layer is prepared into corresponding pattern by quarter, electron beam lithography, dry etching or wet etching.
4. a kind of preparation method of nucleocapsid GaN nanowire arrays according to claim 1, it is characterised in that：The pattern
Size is 10nm-10 μm.
5. a kind of preparation method of nucleocapsid GaN nanowire arrays according to claim 1, it is characterised in that：In step 3）In,
Using the nanostructure for being dry-etched in formation steep side walls in GaN base structural membrane.
6. a kind of preparation method of nucleocapsid GaN nanowire arrays according to claim 5, it is characterised in that:The dry method is carved
Erosion is ion beam etching, inductively coupled plasma etching or reactive ion etching.
7. a kind of preparation method of nucleocapsid GaN nanowire arrays according to claim 1, it is characterised in that：In step 3）In,
The steep of the nanostructure of steep side walls judges according to angle of the flank angle value.
8. a kind of preparation method of nucleocapsid GaN nanowire arrays according to claim 7, it is characterised in that：Angle of the flank angle value
Ranging from 45 ° -90 °.
9. a kind of preparation method of nucleocapsid GaN nanowire arrays according to claim 1, it is characterised in that：In step 4）In,
Above-mentioned nanostructure is corroded using alkaline solution.
10. a kind of preparation method of nucleocapsid GaN nanowire arrays according to claim 1, it is characterised in that：In step 5）
In, it is deposited using chemical vapor deposition, metalorganic vapor phase chemical deposition, molecular beam epitaxy deposition, hydride gas-phase epitaxy
Or the method for sputter deposition, in step 4）Diauxic growth is carried out on the GaN nano wire array of gained.
11. a kind of preparation method of nucleocapsid GaN nanowire arrays according to claim 1, it is characterised in that：In step 5）
In, the material that the diauxic growth uses is AlN, AlGaN, InGaN, InN, ZnO or SiO2。
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Cited By (3)
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| CN110067022A (en) * | 2019-03-20 | 2019-07-30 | 华南师范大学 | A kind of monocrystalline GaN nano wire and preparation method thereof |
| CN111509062A (en) * | 2020-04-29 | 2020-08-07 | 华南师范大学 | Micrometer-line ultraviolet light detection device based on gallium nitride-aluminum nitride core-shell structure and preparation method thereof |
| CN113044809A (en) * | 2021-03-22 | 2021-06-29 | 南京大学 | Vertical Ga2O3 nanotube ordered array and preparation method thereof |
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| US20040175844A1 (en) * | 2002-12-09 | 2004-09-09 | The Regents Of The University Of California | Sacrificial template method of fabricating a nanotube |
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| CN110067022A (en) * | 2019-03-20 | 2019-07-30 | 华南师范大学 | A kind of monocrystalline GaN nano wire and preparation method thereof |
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| CN113044809A (en) * | 2021-03-22 | 2021-06-29 | 南京大学 | Vertical Ga2O3 nanotube ordered array and preparation method thereof |
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Application publication date: 20180814 |