CN104766910A - GaN nanowire and preparation method thereof - Google Patents
GaN nanowire and preparation method thereof Download PDFInfo
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- CN104766910A CN104766910A CN201510066337.7A CN201510066337A CN104766910A CN 104766910 A CN104766910 A CN 104766910A CN 201510066337 A CN201510066337 A CN 201510066337A CN 104766910 A CN104766910 A CN 104766910A
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- 239000002070 nanowire Substances 0.000 title claims abstract description 96
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 230000000873 masking effect Effects 0.000 claims abstract description 40
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000012670 alkaline solution Substances 0.000 claims abstract description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 19
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 238000001465 metallisation Methods 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- 230000000737 periodic effect Effects 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- -1 indium phosphide compound Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses a GaN nanowire and a preparation method thereof. The preparation method of the GaN nanowire comprises the steps of forming a III-nitride film on a substrate in a epitaxial growth mode through MOCVD, preparing a graphical masking film on an epitaxial wafer, growing a GaN hexagonal pyramid microstructure on the graphical epitaxial wafer based on an MOCD selective area growing method, then etching the side face {1-101} of the GaN hexagonal pyramid microstructure off through an alkaline solution etching method, finally preparing the GaN nanowire, wherein the side face of the GaN nanowire is a {1-100} face, and the top face of the GaN nanowire is a {1-101} face. The GaN nanowire and the preparation method of the GaN nanowire have the advantages that the process is simple, and the diameter, height and position of the nanowire are controllable. In addition, the GaN nanowire can be used for manufacturing a GaN nanodevice with high performance.
Description
Technical field
The present invention relates to technical field of semiconductor device, be specifically related to a kind of GaN nano wire and preparation method thereof, can be used for nano wire microelectronics and opto-electronic device.
Background technology
Due to the character such as power, heat, electricity, light, magnetic of nano material, have very big-difference with conventional bulk, its research has abundant scientific contents and important scientific value, one of three big science technology being thus considered to 21 century.Wherein, semiconductor nanowires, due to the One-dimensional Quantum structure of its uniqueness, is considered to the basic structure of following micro-nano device.In recent years, the research work of semiconductor nanowires has made great progress, and its application comprises integrated circuit, transistor, laser, light-emitting diode, single photon device and solar cell etc.Wherein, in numerous semi-conducting materials, GaN base semi-conducting material has wider direct band gap, with the physics of its excellence, chemical stability, high saturated electron drift velocity, the performances such as high breakdown field strength, are widely used in the fields such as high frequency, high temperature, high power electronic device and opto-electronic device at present, have become the third generation semi-conducting material after first generation germanium, silicon semiconductor material and second generation GaAs, indium phosphide compound semiconductor materials.Therefore, the focus be prepared into as people's research of GaN nano wire.
Although GaN nano wire has very important application prospect, solution series of problems is also needed in the practical and industrialization of GaN nano wire device badly, and key issue is wherein the radius, highly how realizing GaN nano wire, the accurate regulation and control of position.Therefore a kind of radius of design research and development, height and position regulatable GaN nano wire preparation method are that wound of the present invention grinds motivation.
Summary of the invention
The present invention, in order to overcome the radius of GaN nano wire, height and the unmanageable problem of growth position, first proposes a kind of GaN nano wire preparation method.
Another object of the present invention proposes a kind of practical and GaN nano wire that is industrialization value of having.
To achieve these goals, technical scheme of the present invention:
A preparation method for GaN nano wire, comprises the following steps:
Step 1: by MOCVD, at substrate Epitaxial growth III-nitride film;
Step 2: metallization medium layer on above-mentioned III-nitride film, and this dielectric layer is prepared into graphical masking film;
Step 3: on above-mentioned patterned III-nitride film by MOCVD selective area growing technology epitaxial growth side be 1-100} face, end face is the GaN hexagonal pyramid micro-structural in (0001) face;
Step 4: corroded by alkaline solution, GaN hexagonal pyramid micro-structural { 1-101} face erodes, and is finally prepared into side for { 1-100} face, end face is the GaN nano wire in (0001) face.
This preparation method, can by controlling the growth parameter(s) of epitaxial growth GaN hexagonal pyramid micro-structural, change the height of this GaN hexagonal pyramid micro-structural and the size of (0001) end face, thus control height and the radius of the GaN nano wire formed after alkaline solution corrosion.
Preferably, described alkaline solution is KOH or NaOH solution, and the mass concentration scope of its solution is 5%-80%.
Preferably, adopt wet etching method that GaN hexagonal pyramid micro-structural is corroded into GaN nano wire in described step 4, the solution temperature ranges of corrosion process is 20
oc-100
oc.
Preferably, the material of described graphical masking film is SiO
2or SiN
x, the graphic structure of perforate is circular, and Circularhole diameter scope is 1 μm-20 μm.
Preferably, described substrate is Si, sapphire, SiC, GaN, AlN or ZnO substrate.
Preferably, described III-nitride film is the composite bed that AlN film, GaN film or AlN and GaN film are formed.
Preferably, by changing the concrete graphic structure of graphical masking film, position and the spread pattern of the GaN hexagonal pyramid structure of MOCVD epitaxy growth can be controlled, thus the position of the GaN nano wire formed after controlling to eventually pass alkaline solution corrosion or nano-wire array and spread pattern.
Preferably, by the height of the Altitude control GaN nano wire of GaN hexagonal pyramid micro-structural, controlled the radius of GaN nano wire by (0001) end face of GaN hexagonal pyramid micro-structural.
A kind of GaN nano wire is side is that { 1-100} face, end face is the GaN nano wire in (0001) face, is followed successively by graphical masking film, III-nitride film and substrate bottom this GaN nano wire from top to bottom.
Compared with prior art, beneficial effect of the present invention is: The present invention gives a kind of with low cost, workable GaN nano wire growth preparation technology, the height of this GaN nano wire, diameter, growth position can accurately control, and can realize single GaN nano wire or GaN nano wire array according to demand.
Accompanying drawing explanation
Fig. 1 is the basic preparation flow figure of GaN nano wire provided by the invention.
Fig. 2 A is the SEM figure of the GaN hexagonal pyramid micro-structural that the embodiment of the present invention 1 provides.
Fig. 2 B is the SEM figure of the GaN nano wire that the embodiment of the present invention 1 provides.
Fig. 3 A is the SEM figure of the GaN hexagonal pyramid micro-structural that the embodiment of the present invention 2 provides.
Fig. 3 B is the SEM figure of the GaN nano wire that the embodiment of the present invention 2 provides.
Fig. 4 is the structural representation of the GaN nano wire array that the embodiment of the present invention 3 provides.
Fig. 5 is the cross section structure schematic diagram of the nano wire InGaN/GaN LED of the core/shell structure that the embodiment of the present invention 4 provides.
Fig. 6 is the cross section structure schematic diagram of the nano wire InGaN/GaN LED of the club shaped structure that the embodiment of the present invention 5 provides.
Embodiment
The specific embodiment of the following stated, further describes the object of inventing, technical scheme and beneficial effect.The following stated that it should be understood that is only specific embodiments of the invention, is not limited to the present invention, within the spirit and principles in the present invention all, and any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
In accompanying drawing, 1-substrate, 2-III-nitride film, the graphical masking film of 3-, 4-GaN hexagonal pyramid micro-structural, 5-GaN nano wire, 6-InGaN/GaN active layer, 7-p-GaN cover layer, 8-SiO
2cover layer.
With reference to Fig. 1, the basic preparation flow of GaN nano wire of the present invention is:
The first step: by MOCVD, at substrate Epitaxial growth III-nitride film;
Second step: metallization medium layer on above-mentioned III-nitride film, and this dielectric layer is prepared into graphical masking film;
3rd step: on above-mentioned patterned III-nitride film by the epitaxial growth of MOCVD selective area growing technology go out side for 1-100} face, end face is the GaN hexagonal pyramid micro-structural in (0001) face;
4th step: corroded by alkaline solution, GaN hexagonal pyramid micro-structural { 1-101} face erodes, and is finally prepared into side for { 1-100} face, end face is the GaN nano wire in (0001) face.
Basic preparation flow based on above-mentioned GaN nano wire provides following examples:
Embodiment 1
Prepare diameter on a si substrate and be less than 200 nm, be highly about the GaN nano wire of 5 μm, the material structure of the present embodiment is followed successively by from bottom to up, Si substrate, AlN III-nitride film, SiO
2graphical masking film, GaN nano wire.Namely substrate 1 adopts Si substrate in the present embodiment, and III-nitride film 2 adopts AlN III-nitride film, and graphical masking film 3 adopts SiO
2graphical masking film.
Its preparation method comprises the following steps successively:
Step 1: Si substrate is put into MOCVD reative cell, epitaxial growth thickness is the AlN III-nitride film of 300 nm on a si substrate;
Step 2: by PECVD is the SiO of 100 nm at above-mentioned AlN III-nitride film (growth AlN film is on a si substrate epitaxial wafer) upper deposit thickness
2dielectric layer, and adopt conventional photoetching and wet etching method, SiO
2dielectric layer is prepared into the graphical masking film of periodic hole structure, this graphical masking film pattern to be opening diameter be circle of 3 μm;
Step 3: the above-mentioned epitaxial wafer with graphical masking film is put into MOCVD reative cell, 1095
oc, 300 mbar, the trimethyl gallium (TMGa) 30 minutes of the ammonia (NH3) of 10000 sccm and 40 sccm is passed under atmosphere of hydrogen environment, selective area grows GaN hexagonal pyramid micro-structural, the side of this GaN hexagonal pyramid micro-structural be 1-101} face, end face is (0001) face, is highly about 5 μm, end face diameter is less than 200nm, and its structure as shown in Figure 2 A;
Step 4: it is 30% that the above-mentioned epitaxial wafer with GaN hexagonal pyramid micro-structural is placed in mass concentration, and temperature is 50
oin potassium hydroxide (KOH) solution of C corrode 30 minutes, GaN hexagonal pyramid micro-structural 1-101} side etch is fallen, and formed side be { 1-100} face, end face is (0001) face, highly be about 5 μm, diameter is less than the GaN nano wire of 200 nm, and its structure as shown in Figure 2 B.
Embodiment 2
Prepare diameter on a si substrate and be about 500 nm, be highly about the GaN nano wire of 4 μm, the material structure of the present embodiment is followed successively by from bottom to up, Si substrate, AlN/GaN III-nitride film, SiO
2graphical masking film, GaN nano wire.Namely substrate 1 adopts Si substrate in the present embodiment, and III-nitride film 2 adopts AlN/GaN III-nitride film, and graphical masking film 3 adopts SiO
2graphical masking film.
Its preparation method comprises the following steps successively:
Step 1: Si substrate is put into MOCVD reative cell, the on a si substrate GaN epitaxial layer of epitaxial growth thickness to be the AlN epitaxial loayer of 100 nm and thickness be 800 nm successively;
Step 2: by PECVD, at the SiO of above-mentioned AlN/GaN III-nitride film (growth AlN/GaN film is on a si substrate epitaxial wafer) upper deposition 100 nm
2dielectric layer, and adopt conventional photoetching and wet etching method, SiO
2dielectric layer is prepared into the graphical masking film of periodic hole structure, this graphical masking film pattern to be opening diameter be circle of 3 μm;
Step 3: the above-mentioned epitaxial wafer with pattern mask is put into MOCVD reative cell, 1095
oc, 250 mbar, the trimethyl gallium (TMGa) 25 minutes of the ammonia (NH3) of 10000 sccm and 40 sccm is passed under atmosphere of hydrogen environment, selective area grows GaN hexagonal pyramid micro-structural, the side of this GaN hexagonal pyramid micro-structural be 1-101} face, end face is (0001) face, is highly about 4 μm, end face diameter is about 500 nm, and its structure as shown in Figure 3A;
Step 4: it is 30% that the above-mentioned epitaxial wafer with GaN hexagonal pyramid micro-structural is placed in mass concentration, and temperature is 50
oin potassium hydroxide (KOH) solution of C corrode 25 minutes, GaN hexagonal pyramid micro-structural 1-101} side etch is fallen, and formed side be { 1-100} face, end face is (0001) face, highly be about 4 μm, diameter is about the GaN nano wire of 500 nm, and its structure as shown in Figure 3 B.
Embodiment 3
Prepare diameter on a si substrate and be less than 200 nm, be highly about the GaN nano wire array of 5 μm.The present embodiment adopts the material structure basically identical with embodiment 1, and material structure is followed successively by from bottom to up, Si substrate, AlN III-nitride film, SiO
2graphical masking film, GaN nano wire.Namely substrate 1 adopts Si substrate in the present embodiment, and III-nitride film 2 adopts AlN III-nitride film, and graphical masking film 3 adopts SiO
2graphical masking film.
Concrete preparation flow and embodiment 1 basically identical, wherein when step 2 prepares graphical masking film 3, the pattern of masking film is prepared into the circular hole of periodic arrangement, Circularhole diameter is 3 μm, and the cycle is 10 μm.Therefore can extend the GaN hexagonal pyramid micro-structural of array arrangement in follow-up MOCVD selective area growth course China and foreign countries, and be prepared into GaN nano wire array, as Fig. 4 by follow-up KOH corrosion.
Embodiment 4
Prepare diameter on a si substrate and be about 200 nm, be highly about the nano wire InGaN/GaN LED of the core/shell structure of 5 μm, the material structure of the present embodiment is followed successively by from bottom to up, Si substrate, AlN/n-GaN III-nitride film, SiO
2graphical masking film, n-GaN nano wire, InGaN/GaN active layer, p-GaN cover layer.Namely substrate 1 adopts Si substrate in the present embodiment, and III-nitride film 2 adopts AlN/n-GaN III-nitride film, and graphical masking film 3 adopts SiO
2graphical masking film, GaN nano wire 5 is n-GaN nano wire.
Its preparation method comprises the following steps successively:
Step 1: Si substrate is put into MOCVD reative cell, on a si substrate the n-GaN epitaxial loayer of epitaxial growth thickness to be the AlN epitaxial loayer of 100 nm and thickness be 800 nm successively;
Step 2: by PECVD, on above-mentioned epitaxial wafer, deposit thickness is the SiO of 100 nm
2dielectric layer, and adopt conventional photoetching and wet etching method, SiO
2dielectric layer is prepared into the graphical masking film of periodic hole structure, this graphical masking film pattern to be opening diameter be circle of 3 μm;
Step 3: the above-mentioned epitaxial wafer with pattern mask is put into MOCVD reative cell, 1095
oc, 250 mbar, the trimethyl gallium (TMGa) 30 minutes of the ammonia (NH3) of 10000 sccm and 40 sccm is passed under atmosphere of hydrogen environment, selective area grows n-GaN hexagonal pyramid micro-structural, the side of this n-GaN hexagonal pyramid micro-structural is { 1-101} face, end face is (0001) face, is highly about 5 μm, and end face diameter is about 200 nm;
Step 4: it is 30% that the above-mentioned epitaxial wafer with n-GaN hexagonal pyramid micro-structural is placed in concentration, and temperature is 50
oin the solution of the potassium hydroxide (KOH) of C corrode 30 minutes, 1-101} side etch is fallen, formation side be 1-100} face, end face is (0001) face, is highly about 5 μm, and diameter is about the n-GaN nano wire of 200 nm;
Step 5: the above-mentioned epitaxial wafer with n-GaN nano wire is put into MOCVD reative cell, successively at n-GaN nanowire surface epitaxial growth InGaN/GaN active layer and p-GaN cover layer, be prepared into the nano wire InGaN/GaN LED of core/shell structure, as Fig. 5.
Embodiment 5
Prepare diameter on a si substrate and be about 200 nm, be highly about the nano wire InGaN/GaN LED of the club shaped structure of 5 μm, the material structure of the present embodiment is followed successively by from bottom to up, Si substrate, AlN/n-GaN III-nitride film, SiO
2graphical masking film, n-GaN nano wire, SiO
2cover layer, InGaN/GaN active layer 6, p-GaN cover layer 7.Namely substrate 1 adopts Si substrate in the present embodiment, and III-nitride film 2 adopts AlN/n-GaN III-nitride film, and graphical masking film 3 adopts SiO
2graphical masking film, GaN nano wire 5 is n-GaN nano wire.
Its preparation method comprises the following steps successively:
Step 1: Si substrate is put into MOCVD reative cell, on a si substrate the n-GaN epitaxial loayer of epitaxial growth thickness to be the AlN epitaxial loayer of 100 nm and thickness be 800 nm successively;
Step 2: by PECVD, on above-mentioned epitaxial wafer, deposit thickness is the SiO of 100 nm
2dielectric layer, and adopt conventional photoetching and wet etching method, SiO
2dielectric layer is prepared into the graphical masking film of periodic hole structure, this graphical masking film pattern to be opening diameter be circle of 3 μm;
Step 3: the above-mentioned epitaxial wafer with pattern mask is put into MOCVD reative cell, 1095
oc, 250 mbar, the trimethyl gallium (TMGa) 30 minutes of the ammonia (NH3) of 10000 sccm and 40 sccm is passed under atmosphere of hydrogen environment, selective area grows n-GaN hexagonal pyramid micro-structural, the side of this n-GaN hexagonal pyramid micro-structural is { 1-101} face, end face is (0001) face, is highly about 5 μm, and end face diameter is about 200 nm;
Step 4: it is 30% that the epitaxial wafer of said n-GaN hexagonal pyramid micro-structural is placed in mass concentration, and temperature is 50
oin the solution of the potassium hydroxide (KOH) of C corrode 30 minutes, 1-101} side etch is fallen, formation side be 1-100} face, end face is (0001) face, is highly about 5 μm, and diameter is about the n-GaN nano wire of 200 nm;
Step 5: the SiO exposing its top in the preparation of n-GaN nanowire surface
2cover layer;
Step 6: the above-mentioned epitaxial wafer with n-GaN nano wire is put into MOCVD reative cell, successively at n-GaN nano wire top epitaxial growth InGaN/GaN active layer and p-GaN cover layer, is prepared into the nano wire InGaN/GaN LED of club shaped structure, as Fig. 6.
Embodiment 6
Prepare diameter on a si substrate and be about 200 nm, be highly about the nano wire InGaN/GaN LED array of the core/shell structure of 5 μm.The present embodiment adopts the material structure basically identical with embodiment 4, and material structure is followed successively by from bottom to up, Si substrate, AlN/n-GaN III-nitride film, SiO
2graphical masking film, n-GaN nano wire, InGaN/GaN active layer, p-GaN cover layer.Concrete preparation flow and embodiment 4 basically identical, wherein when step 2 prepares graphical masking film, the pattern of masking film is prepared into the circular hole of periodic arrangement, Circularhole diameter is 3 μm, and the cycle is 10 μm.Therefore can extend the n-GaN hexagonal pyramid micro-structural of array arrangement in follow-up MOCVD selective area growth course China and foreign countries, and be prepared into n-GaN nano-wire array by follow-up KOH corrosion.Finally by MOCVD successively at n-GaN nano-wire array Epitaxial growth InGaN/GaN active layer and p-GaN cover layer, be prepared into the nano wire InGaN/GaN LED array of core/shell structure.
Claims (9)
1. a preparation method for GaN nano wire, is characterized in that,
Step 1: by MOCVD, in substrate (1) Epitaxial growth III-nitride film (2);
Step 2: in the upper metallization medium layer of above-mentioned III-nitride film (2), and this dielectric layer is prepared into graphical masking film (3);
Step 3: on above-mentioned patterned III-nitride film (2) by MOCVD selective area growing technology epitaxial growth side be 1-100} face, end face is GaN hexagonal pyramid micro-structural (4) in (0001) face;
Step 4: corroded by alkaline solution, GaN hexagonal pyramid micro-structural (4) { 1-101} face erodes, and is finally prepared into side for { 1-100} face, end face is the GaN nano wire (5) in (0001) face.
2. the preparation method of GaN nano wire according to claim 1, is characterized in that, described alkaline solution is KOH or NaOH solution, and the mass concentration scope of its solution is 5%-80%.
3. the preparation method of GaN nano wire according to claim 1, is characterized in that, adopt wet etching method that GaN hexagonal pyramid micro-structural is corroded into GaN nano wire in described step 4, the solution temperature ranges of corrosion process is 20
oc-100
oc.
4. the preparation method of GaN nano wire according to claim 1, is characterized in that, the material of described graphical masking film is SiO
2or SiN
x, the graphic structure of perforate is circular, and Circularhole diameter scope is 1 μm-20 μm.
5. the preparation method of GaN nano wire according to claim 1, is characterized in that, described substrate is Si, sapphire, SiC, GaN, AlN or ZnO substrate.
6. the preparation method of GaN nano wire according to claim 1, is characterized in that, described III-nitride film is the composite bed that AlN film, GaN film or AlN and GaN film are formed.
7. the preparation method of the GaN nano wire according to any one of claim 1 to 6, it is characterized in that, by changing the concrete graphic structure of graphical masking film, position and the spread pattern of the GaN hexagonal pyramid structure of MOCVD epitaxy growth can be controlled, thus the position of the GaN nano wire formed after controlling to eventually pass alkaline solution corrosion or nano-wire array and spread pattern.
8. the preparation method of the GaN nano wire according to any one of claim 1 to 6, it is characterized in that, by the height of the Altitude control GaN nano wire of GaN hexagonal pyramid micro-structural, controlled the radius of GaN nano wire by (0001) end face of GaN hexagonal pyramid micro-structural.
9. the GaN nano wire prepared by preparation method described in any one of claim 1 to 8, it is characterized in that, be side be { 1-100} face, end face is the GaN nano wire in (0001) face, is followed successively by graphical masking film (3), III-nitride film (2) and substrate (1) bottom this GaN nano wire from top to bottom.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108364972A (en) * | 2018-04-03 | 2018-08-03 | 中山大学 | Fexible film GaN base nano-pillar LED array micro-display device and preparation method thereof |
| CN108394857A (en) * | 2018-02-02 | 2018-08-14 | 上海理工大学 | A kind of preparation method of nucleocapsid GaN nano wire array |
| CN108441943A (en) * | 2018-02-02 | 2018-08-24 | 上海理工大学 | A kind of preparation method of extensive GaN nano wire array |
| CN109994562A (en) * | 2019-04-17 | 2019-07-09 | 华南理工大学 | Nano-pillar and preparation method on the graphical GaAs substrate of super polycrystalline face hexagonal cone |
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| CN108394857A (en) * | 2018-02-02 | 2018-08-14 | 上海理工大学 | A kind of preparation method of nucleocapsid GaN nano wire array |
| CN108441943A (en) * | 2018-02-02 | 2018-08-24 | 上海理工大学 | A kind of preparation method of extensive GaN nano wire array |
| CN108364972A (en) * | 2018-04-03 | 2018-08-03 | 中山大学 | Fexible film GaN base nano-pillar LED array micro-display device and preparation method thereof |
| CN108364972B (en) * | 2018-04-03 | 2024-05-31 | 中山大学 | Flexible thin film GaN-based nano-pillar LED array micro-display device and manufacturing method thereof |
| JP2020057640A (en) * | 2018-09-28 | 2020-04-09 | セイコーエプソン株式会社 | Light-emitting device and projector |
| JP7320770B2 (en) | 2018-09-28 | 2023-08-04 | セイコーエプソン株式会社 | Light-emitting device and projector |
| CN109994562A (en) * | 2019-04-17 | 2019-07-09 | 华南理工大学 | Nano-pillar and preparation method on the graphical GaAs substrate of super polycrystalline face hexagonal cone |
| JP2022141079A (en) * | 2021-03-15 | 2022-09-29 | セイコーエプソン株式会社 | Light emitting device, projector, and display |
| JP7320794B2 (en) | 2021-03-15 | 2023-08-04 | セイコーエプソン株式会社 | Light-emitting devices, projectors, and displays |
| CN112736173A (en) * | 2021-04-06 | 2021-04-30 | 至芯半导体(杭州)有限公司 | Composite substrate, preparation method and semiconductor device |
| CN112736173B (en) * | 2021-04-06 | 2021-06-29 | 至芯半导体(杭州)有限公司 | Composite substrate, preparation method thereof and semiconductor device |
| CN112802930A (en) * | 2021-04-15 | 2021-05-14 | 至芯半导体(杭州)有限公司 | Method for manufacturing group III nitride substrate and semiconductor device |
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