KR940004084A - Polycrystalline Growth Method for Gallium Arsenide Single Crystal Growth - Google Patents

Polycrystalline Growth Method for Gallium Arsenide Single Crystal Growth Download PDF

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Publication number
KR940004084A
KR940004084A KR1019920015829A KR920015829A KR940004084A KR 940004084 A KR940004084 A KR 940004084A KR 1019920015829 A KR1019920015829 A KR 1019920015829A KR 920015829 A KR920015829 A KR 920015829A KR 940004084 A KR940004084 A KR 940004084A
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South Korea
Prior art keywords
temperature
reaction tube
single crystal
gaas
polycrystalline
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KR1019920015829A
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Korean (ko)
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KR950013003B1 (en
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오명환
이호성
박인식
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박원근
금성전선 주식회사
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Priority to KR1019920015829A priority Critical patent/KR950013003B1/en
Publication of KR940004084A publication Critical patent/KR940004084A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents

Abstract

본 발명은 GaAs결정성장시, 도펀트에 의한 불순물의 편석을 억제시켜, 균질한 다결정을 얻는 방법에 관한 것으로, 본 발명의 방법은, 반응관에 Ga,As장입한 후, GaAs액상선을 따라 승온시켜 Ga가 담긴 Ga보우트를 고온으로 하고, As가 담긴 As보우트를 저온으로한 후, 반응관의 바닥부위가 윗부위보다 먼저 냉각, 성장되게 하고, 전체적으로 1000℃가 되면, 일정시간 유지시켜, 갇힌 As등이 밖으로 충분히 확산되도록 하고, 상온까지 냉각시키는 단계들로 구성되어, 균일한 GaAs잉곳을 얻을 수 있다.The present invention relates to a method for suppressing the segregation of impurities by dopants during GaAs crystal growth to obtain a homogeneous polycrystal. The method of the present invention, after loading Ga and As into a reaction tube, increases the temperature along the GaAs liquidus line. The Ga boat containing Ga is heated to high temperature, the As boat containing As is cooled to low temperature, and the bottom part of the reaction tube is cooled and grown before the upper part, and when it reaches 1000 ° C as a whole, It is composed of the steps such that As is sufficiently diffused out, and cooled to room temperature, a uniform GaAs ingot can be obtained.

Description

갈륨비소 단결정 성장용 다결정 성장방법Polycrystalline Growth Method for Gallium Arsenide Single Crystal Growth

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 다결정 합성용 반응관을 나타내는 개략도,1 is a schematic view showing a reaction tube for polycrystal synthesis of the present invention,

제2도는 본 발명의 균질 GaAs 다결정 합성 장치를 나타내는 개략도,2 is a schematic diagram showing a homogeneous GaAs polycrystal synthesis apparatus of the present invention,

제3도는 본 발명에 따른 반응관의 냉각곡선으로서 (가)는 반응관의 바닥부위의 냉각곡선, (나)는 반응관의 위부위의 냉각곡선.3 is a cooling curve of the reaction tube according to the present invention (a) is a cooling curve of the bottom of the reaction tube, (b) a cooling curve of the upper portion of the reaction tube.

Claims (4)

Ga보우트와 As보우트에 각각 Ga금속과 As긍속율 담고, Ga을 담은 보우트를 반응관의 고온부에 장입하고, As를 담은 보우트를 반응관의 저온부에 장입한 후, 상기 반응관을 GaAs 액상선을 따라 승온하여 상기 반응관의 고온부의 온도가 1250℃ 저온부의 온도가 610 내지 630℃가 되도록 가열하고, 상기 반응관의 고온부의 온도틀 1250℃ 저온부의 온도를 610내지 630℃로 한후 일정한 시간 유지하고 나서, 상기 반응관의 냉각속도를 바닥부위가 윗부위보다 크게 하여 상기 반응관을 전체 적으로 1000℃가 되도록 냉각시킨 후, 일정시 간동안 항온에서 유지시켜 갇힌 As등을 충분히 밖으로 확산시키고, 이어서, 상온까지 냉각시키는 단계들로 이루어지는 GaAs 단결정 성장용 다결정 상장방법.The Ga and As boats contain Ga metal and As rapid rate, respectively, and the Ga containing boat is charged to the high temperature of the reaction tube, the As containing boat is charged to the low temperature of the reaction tube, and the reaction tube is connected to the GaAs liquid line. The temperature of the high temperature part of the reaction tube is heated to 1250 ° C. and the temperature of the low temperature part is 610 to 630 ° C., and the temperature of the high temperature part 1250 ° C. of the low temperature part of the reaction tube is maintained at 610 to 630 ° C. for a constant time. Then, the cooling rate of the reaction tube is lowered than the upper portion, and the reaction tube is cooled to a total temperature of 1000 ° C., and then kept at a constant temperature for a certain time to diffuse the trapped As sufficiently out, and then Polycrystalline listing method for growing a single crystal GaAs consisting of cooling to room temperature. 제1항 있어서, Ga금속의 장입량과, As금속의 장입량이 각각 2㎏, 2.1㎏인 것을 특징으로 하는 GaAs 단결정 성장용 다결정 성장방법.The polycrystalline growth method for growing GaAs single crystals according to claim 1, wherein the loading amount of Ga metal and the loading amount of As metal are 2 kg and 2.1 kg, respectively. 제1또는 제2항에 있어서, 반응관의 고온부외 온도를 1250℃ 저온부의 온도를 610내지 630℃로 하여, 2시간 유지하는 것을 특징으로 하는 GaAs 단결정 성장용 다결정 성장방법.The polycrystalline growth method for growing GaAs single crystal according to claim 1 or 2, wherein the temperature outside the high temperature portion of the reaction tube is maintained at a temperature of 1250 ° C. for a temperature of 610 to 630 ° C. for 2 hours. 제3항에 있어서, 1000℃에서의 항온유지시간이 5시간 이상인 것을 특징으로 하는 GaAs 단결정 성장용 다결정 성장방법.The polycrystalline growth method for growing GaAs single crystal according to claim 3, wherein the constant temperature holding time at 1000 DEG C is 5 hours or more. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920015829A 1992-08-31 1992-08-31 Growth method of polycrystalline for gaas single-crystal growth KR950013003B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920015829A KR950013003B1 (en) 1992-08-31 1992-08-31 Growth method of polycrystalline for gaas single-crystal growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920015829A KR950013003B1 (en) 1992-08-31 1992-08-31 Growth method of polycrystalline for gaas single-crystal growth

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KR940004084A true KR940004084A (en) 1994-03-14
KR950013003B1 KR950013003B1 (en) 1995-10-24

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