KR940002469U - 흘러내림 방지 수단을 구비한 바지 - Google Patents

흘러내림 방지 수단을 구비한 바지

Info

Publication number
KR940002469U
KR940002469U KR2019920012351U KR920012351U KR940002469U KR 940002469 U KR940002469 U KR 940002469U KR 2019920012351 U KR2019920012351 U KR 2019920012351U KR 920012351 U KR920012351 U KR 920012351U KR 940002469 U KR940002469 U KR 940002469U
Authority
KR
South Korea
Prior art keywords
trousers
fall measures
measures
fall
Prior art date
Application number
KR2019920012351U
Other languages
English (en)
Other versions
KR940004711Y1 (ko
Inventor
조길완
Original Assignee
조길완
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 조길완 filed Critical 조길완
Priority to KR92012351U priority Critical patent/KR940004711Y1/ko
Priority to US08/052,092 priority patent/US5328862A/en
Publication of KR940002469U publication Critical patent/KR940002469U/ko
Application granted granted Critical
Publication of KR940004711Y1 publication Critical patent/KR940004711Y1/ko

Links

Classifications

    • A—HUMAN NECESSITIES
    • A41—WEARING APPAREL
    • A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D1/00—Garments
    • A41D1/06—Trousers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66492—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a pocket or a lightly doped drain selectively formed at the side of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Textile Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Undergarments, Swaddling Clothes, Handkerchiefs Or Underwear Materials (AREA)
KR92012351U 1992-06-12 1992-07-06 흘러내림 방지 수단을 구비한 바지 KR940004711Y1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR92012351U KR940004711Y1 (ko) 1992-07-06 1992-07-06 흘러내림 방지 수단을 구비한 바지
US08/052,092 US5328862A (en) 1992-06-12 1993-04-22 Method of making metal oxide semiconductor field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR92012351U KR940004711Y1 (ko) 1992-07-06 1992-07-06 흘러내림 방지 수단을 구비한 바지

Publications (2)

Publication Number Publication Date
KR940002469U true KR940002469U (ko) 1994-02-15
KR940004711Y1 KR940004711Y1 (ko) 1994-07-20

Family

ID=19336162

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92012351U KR940004711Y1 (ko) 1992-06-12 1992-07-06 흘러내림 방지 수단을 구비한 바지

Country Status (2)

Country Link
US (1) US5328862A (ko)
KR (1) KR940004711Y1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200453983Y1 (ko) * 2011-03-02 2011-06-09 정재수 야외활동용 바지
KR101103480B1 (ko) * 2011-03-02 2012-01-10 데상트코리아 주식회사 바지 허리단의 신축 구조
KR102430991B1 (ko) * 2022-01-10 2022-08-09 이성길 공기주입식 족구화

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US5424234A (en) * 1991-06-13 1995-06-13 Goldstar Electron Co., Ltd. Method of making oxide semiconductor field effect transistor
JPH06275640A (ja) * 1993-03-22 1994-09-30 Semiconductor Energy Lab Co Ltd 薄膜トランジスタおよびその作製方法
US5405788A (en) * 1993-05-24 1995-04-11 Micron Technology, Inc. Method for forming and tailoring the electrical characteristics of semiconductor devices
US5500379A (en) * 1993-06-25 1996-03-19 Matsushita Electric Industrial Co., Ltd. Method of manufacturing semiconductor device
US5444002A (en) * 1993-12-22 1995-08-22 United Microelectronics Corp. Method of fabricating a short-channel DMOS transistor with removable sidewall spacers
US5413949A (en) * 1994-04-26 1995-05-09 United Microelectronics Corporation Method of making self-aligned MOSFET
US5501991A (en) * 1994-07-13 1996-03-26 Winbond Electronics Corporation Process for making a bipolar junction transistor with a self-aligned base contact
US5439839A (en) * 1994-07-13 1995-08-08 Winbond Electronics Corporation Self-aligned source/drain MOS process
KR0150992B1 (ko) * 1994-08-31 1998-10-01 김광호 고내압용 모스 트랜지스터 및 그 제조방법
US5506161A (en) * 1994-10-24 1996-04-09 Motorola, Inc. Method of manufacturing graded channels underneath the gate electrode extensions
US5504023A (en) * 1995-01-27 1996-04-02 United Microelectronics Corp. Method for fabricating semiconductor devices with localized pocket implantation
US5830798A (en) * 1996-01-05 1998-11-03 Micron Technology, Inc. Method for forming a field effect transistor
JP3413823B2 (ja) * 1996-03-07 2003-06-09 日本電気株式会社 半導体装置及びその製造方法
US6037230A (en) * 1997-06-03 2000-03-14 Texas Instruments Incorporated Method to reduce diode capacitance of short-channel MOSFETS
US5849613A (en) * 1997-10-23 1998-12-15 Chartered Semiconductor Manufacturing Ltd. Method and mask structure for self-aligning ion implanting to form various device structures
KR100376874B1 (ko) * 1997-12-06 2003-06-09 주식회사 하이닉스반도체 반도체장치의트랜지스터제조방법
GB2362030A (en) * 1999-11-12 2001-11-07 Lucent Technologies Inc Method of fabricating a halo structure in an integrated circuit for reduced size transistors
US6784500B2 (en) * 2001-08-31 2004-08-31 Analog Devices, Inc. High voltage integrated circuit amplifier
US6911695B2 (en) * 2002-09-19 2005-06-28 Intel Corporation Transistor having insulating spacers on gate sidewalls to reduce overlap between the gate and doped extension regions of the source and drain
KR100863484B1 (ko) * 2007-10-17 2008-10-15 주식회사 미도물산 허리 사이즈가 조절되는 경찰복 바지
JP5607723B2 (ja) * 2009-04-08 2014-10-15 ファナック ロボティクス アメリカ コーポレイション 改良されたロボット塗装装置及びその操作方法

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JPS62229976A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 半導体装置およびその製造方法
US4771014A (en) * 1987-09-18 1988-09-13 Sgs-Thomson Microelectronics, Inc. Process for manufacturing LDD CMOS devices
IT1223571B (it) * 1987-12-21 1990-09-19 Sgs Thomson Microelectronics Procedimento per la fabbricazione di dispositivi integrati cmos con lunghezze di porta ridotte
US5122474A (en) * 1988-06-23 1992-06-16 Dallas Semiconductor Corporation Method of fabricating a CMOS IC with reduced susceptibility to PMOS punchthrough
US5082794A (en) * 1989-02-13 1992-01-21 Motorola, Inc. Method of fabricating mos transistors using selective polysilicon deposition
DE3919060A1 (de) * 1989-06-10 1990-12-20 Messerschmitt Boelkow Blohm Verfahren zur selbstkorrektur eines faserkreisels mit 3x3-koppler
JPH03220729A (ja) * 1990-01-25 1991-09-27 Nec Corp 電界効果型トランジスタの製造方法
US5102816A (en) * 1990-03-27 1992-04-07 Sematech, Inc. Staircase sidewall spacer for improved source/drain architecture
US5064774A (en) * 1991-02-19 1991-11-12 Motorola, Inc. Self-aligned bipolar transistor process
KR940006702B1 (ko) * 1991-06-14 1994-07-25 금성일렉트론 주식회사 모스패트의 제조방법
US5200352A (en) * 1991-11-25 1993-04-06 Motorola Inc. Transistor having a lightly doped region and method of formation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200453983Y1 (ko) * 2011-03-02 2011-06-09 정재수 야외활동용 바지
KR101103480B1 (ko) * 2011-03-02 2012-01-10 데상트코리아 주식회사 바지 허리단의 신축 구조
KR102430991B1 (ko) * 2022-01-10 2022-08-09 이성길 공기주입식 족구화

Also Published As

Publication number Publication date
US5328862A (en) 1994-07-12
KR940004711Y1 (ko) 1994-07-20

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