KR940001308A - Method for manufacturing reflective binary phase grating - Google Patents

Method for manufacturing reflective binary phase grating Download PDF

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Publication number
KR940001308A
KR940001308A KR1019920011452A KR920011452A KR940001308A KR 940001308 A KR940001308 A KR 940001308A KR 1019920011452 A KR1019920011452 A KR 1019920011452A KR 920011452 A KR920011452 A KR 920011452A KR 940001308 A KR940001308 A KR 940001308A
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KR
South Korea
Prior art keywords
binary phase
phase grating
manufacturing
thickness
pmma
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Application number
KR1019920011452A
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Korean (ko)
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KR960001163B1 (en
Inventor
박서연
정상돈
김장주
Original Assignee
양승택
재단법인 한국전자통신연구소
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Priority to KR1019920011452A priority Critical patent/KR960001163B1/en
Publication of KR940001308A publication Critical patent/KR940001308A/en
Application granted granted Critical
Publication of KR960001163B1 publication Critical patent/KR960001163B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

본 발명은 종래의 투과형 이진위상격자의 단점인 식각공정의 다단계, 식자깊이 조절의 어려움을 극복하기 위한 반사형 이진위상격차의 제조방법에 관한 것으로, 성장두께를 nm단위로 정확하게 조절 가능하고 균일도가 좋은 유기물 박막을 얻을 수 있는Langmuir-Blodgett기법을 이용하여 감광막인PHMA(polymethl methacrylate)를 사용 광원의 파장에 대해 1/4 두께만큼 입히고 이진패턴에 따라 노광, 현상한 후 고반사 코팅함으로써 식각공정이 필요없고 제작공정이 간소화 되며 효율이 높은 반사형 이진위상격차를 제작할 수 있다.The present invention relates to a method of manufacturing a reflection type binary phase gap to overcome the difficulty of controlling the multi-step, etch depth of the etching process which is a disadvantage of the conventional transmission type binary phase grating, the growth thickness can be precisely adjusted in nm unit and uniformity Using the Langmuir-Blodgett technique to obtain a good organic thin film, the photosensitive film PHMA (polymethl methacrylate) is applied to the wavelength of the light source by 1/4 thickness, exposed and developed according to the binary pattern, and then the highly reflective coating is used. This eliminates the need for simplified manufacturing processes and makes highly efficient reflective binary phase gaps.

Description

반사형 이진위상 격자의 제조방법Method for manufacturing reflective binary phase grating

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도의 (a) 내지 (d)는 본 발명에 따른 반사형 이진 위상격자를 제조하는 공정 순서도.(A) to (d) of FIG. 2 are process flowcharts for manufacturing the reflective binary phase grating according to the present invention.

Claims (1)

이진위상격자를 제조하는 방법에 있어서, 실리콘 기판(5)상에 Langmuir-Blodgett 방법으로 PMMA(6)를 입사광 파장의 1/4에 해당하는 두께로 도포하는 단계와, 이진패턴을 정의하고 상기PMMA(6)를 선택적으로 노광 처리한 후 상기 PMMA(6) 중 노광처리된 부분을 제거하는 단계와, 고반사막(7)을 도포하는 단계를 포함하는 것을 특징으로 하는 반사형 이진위상격차의 제조방법.In the method for manufacturing a binary phase grating, applying the PMMA (6) to the silicon substrate (5) by the Langmuir-Blodgett method to a thickness corresponding to a quarter of the incident light wavelength, defining a binary pattern and the PMMA Removing the exposed portion of the PMMA (6) after selectively exposing (6), and applying the high reflection film (7). . ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920011452A 1992-06-29 1992-06-29 Manufacturing method of phase shift lattice KR960001163B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920011452A KR960001163B1 (en) 1992-06-29 1992-06-29 Manufacturing method of phase shift lattice

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920011452A KR960001163B1 (en) 1992-06-29 1992-06-29 Manufacturing method of phase shift lattice

Publications (2)

Publication Number Publication Date
KR940001308A true KR940001308A (en) 1994-01-11
KR960001163B1 KR960001163B1 (en) 1996-01-19

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ID=19335491

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920011452A KR960001163B1 (en) 1992-06-29 1992-06-29 Manufacturing method of phase shift lattice

Country Status (1)

Country Link
KR (1) KR960001163B1 (en)

Also Published As

Publication number Publication date
KR960001163B1 (en) 1996-01-19

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