KR960042912A - Strain dead point illumination method, openings used therein and a method of manufacturing the same - Google Patents

Strain dead point illumination method, openings used therein and a method of manufacturing the same Download PDF

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Publication number
KR960042912A
KR960042912A KR1019950011613A KR19950011613A KR960042912A KR 960042912 A KR960042912 A KR 960042912A KR 1019950011613 A KR1019950011613 A KR 1019950011613A KR 19950011613 A KR19950011613 A KR 19950011613A KR 960042912 A KR960042912 A KR 960042912A
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KR
South Korea
Prior art keywords
opening
illumination
dead point
mask
transmittance
Prior art date
Application number
KR1019950011613A
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Korean (ko)
Inventor
손창진
한우성
김기호
김철홍
Original Assignee
김광호
삼성전자 주식회사
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Priority to KR1019950011613A priority Critical patent/KR960042912A/en
Publication of KR960042912A publication Critical patent/KR960042912A/en

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

변형사점 조명방법, 이에 사용되는 개구 및 그 제조방법에 대해 기재되어 있다.A strain dead point illumination method, an opening used therein, and a manufacturing method thereof are described.

이는 개구를 통과한 광선을 이용하여 마스크 패턴을 웨이퍼에 전사하기 위한 조명방법에 있어서, 사입사 조명성분에 직진 조명성분을 부가하여 조명하는 것을 특징으로 한다. 따라서, 광강도의 불균형을 개선하여, 콘트라스트, 해상도 및 촛점심도를 향상시킬 수 있다.This is an illumination method for transferring a mask pattern onto a wafer using light rays passing through an opening, characterized in that the illumination is added by adding a linear illumination component to the incidence illumination component. Therefore, the light intensity imbalance can be improved, and the contrast, resolution, and depth of focus can be improved.

Description

변형사점 조명방법, 이에 사용되는 개구 및 그 제조방법Strain dead point illumination method, openings used therein and a method of manufacturing the same

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 의한 개구를 도시한 평면도이다, 제4도는 본 발명에 의한 개구의 단면도이다.3 is a plan view showing an opening according to the present invention, and FIG. 4 is a sectional view of the opening according to the present invention.

Claims (9)

개구를 통과한 광선을 이용하여 마스크 패턴을 웨이퍼에 전사하기 위한 조명방법에 있어서, 사입사 조명성분에 직진 조명성분을 부가하여 조명하는 것을 특징으로 하는 변형사점 조명방법.An illumination method for transferring a mask pattern onto a wafer by using light rays passing through an opening, wherein the modified dead-point illumination method is characterized by adding a linear illumination component to the incidence illumination component. 제1항에 있어서, 상기 직진 조명성분은 위상반전되는 것을 특징으로 하는 변형사점 조명방법.The deformation dead point illumination method of claim 1, wherein the straight illumination component is inverted in phase. 제1항에 있어서, 상기 직진 조명성분의 투과율은 10~20%인 것을 특징으로 하는 변형사점 조명방법.The strain dead point illumination method of claim 1, wherein the transmittance of the linear illumination component is 10 to 20%. 광선을 통과시켜 마스크의 패턴을 전사하는 사점조명 개구에 있어서, 상기 개구의 중앙부에 홀을 더 구비하는 것을 특징으로 하는 개구.A four-point illumination opening through which a light beam passes to transfer a pattern of a mask, the opening further comprising a hole in the center of the opening. 제4항에 있어서, 상기 홀에 위상반전 및 투과율 조절막이 형성되어 있는 것을 특징으로 하는 개구.The opening according to claim 4, wherein a phase inversion and a transmittance adjustment film are formed in the hole. 사점조명 개구 상에 상기 개구의 중앙부를 노출시키는 감광막 패턴을 형성하는 제1공정; 상기 감광막 패턴을 식각 마스크로 하여 개구을 식각하는 제2공정; 결과물 전면에 투과율 조절 물질을 도포하는 제3공정; 및 상기 감광막 패턴을 제거하는 제4공정을 포함하는 것을 특징으로 하는 개구의 제조방법.A first step of forming a photosensitive film pattern exposing a central portion of the opening on a dead point lighting opening; Etching the opening by using the photoresist pattern as an etching mask; A third step of applying a transmittance control material on the entire surface of the resultant product; And a fourth step of removing the photosensitive film pattern. 제6항에 있어서, 상기 개구는 석영(Quartz) 마스크 또는 석영 웨이퍼로 구성됨을 특징으로 하는 개구의 제조방법.The method of claim 6, wherein the opening is made of a quartz mask or a quartz wafer. 제6항에 있어서, 상기 투과율 조절물질은 크롬인 것을 특징으로 하는 개구의 제조방법.7. The method of claim 6, wherein the transmittance modulator is chromium. 제6항에 있어서, 상기 제3공정은 스퍼터링법을 사용하여 진행되는 것을 특징으로 하는 개구의 제조방법.The method of manufacturing an opening according to claim 6, wherein the third step is performed using a sputtering method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950011613A 1995-05-11 1995-05-11 Strain dead point illumination method, openings used therein and a method of manufacturing the same KR960042912A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950011613A KR960042912A (en) 1995-05-11 1995-05-11 Strain dead point illumination method, openings used therein and a method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950011613A KR960042912A (en) 1995-05-11 1995-05-11 Strain dead point illumination method, openings used therein and a method of manufacturing the same

Publications (1)

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KR960042912A true KR960042912A (en) 1996-12-21

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