KR970017947A - Modified illumination method in semiconductor manufacturing method - Google Patents
Modified illumination method in semiconductor manufacturing method Download PDFInfo
- Publication number
- KR970017947A KR970017947A KR1019950031111A KR19950031111A KR970017947A KR 970017947 A KR970017947 A KR 970017947A KR 1019950031111 A KR1019950031111 A KR 1019950031111A KR 19950031111 A KR19950031111 A KR 19950031111A KR 970017947 A KR970017947 A KR 970017947A
- Authority
- KR
- South Korea
- Prior art keywords
- lens
- mask
- semiconductor manufacturing
- modified illumination
- mask surface
- Prior art date
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
본 발명은 반도체 제조 방법에 있어서, 마스크 상에 렌즈를 추가하는 변형 조명 방법에 관한 것으로서, 조리개를 통과한 광선을 이용하여 마스크 패턴을 웨이퍼에 전사하기 위한 조명방법에 있어서, 마스크 상에 렌즈를 추가하여 조명하는 것을 특징으로 한다.BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a modified illumination method for adding a lens onto a mask in a semiconductor manufacturing method, the illumination method for transferring a mask pattern onto a wafer using a light beam passing through an aperture, wherein the lens is added onto a mask. It is characterized by the lighting.
따라서, 조리개의 구경을 조절하지 않아도 빛의 세기를 저하시키지 않고 웨이퍼에 빛을 전사할 수 있는 효과를 제공한다.Thus, it is possible to transfer the light to the wafer without lowering the light intensity without adjusting the aperture diameter.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제3도는 종래의 변형 조명 방법에서 해상력을 향상시키면서 빛의 세기를 상대적으로 저하되는 것을 막기 위하여 마스크 표면 상에 오목렌즈를 설치한 것을 보이는 도면이다,3 is a view showing that the concave lens is installed on the mask surface in order to prevent the relative decrease in light intensity while improving the resolution in the conventional modified illumination method.
제4도는 마스크 표면 상에 볼록렌즈를 설치한 것을 보이는 도면이다.4 shows the convex lens provided on the mask surface.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950031111A KR970017947A (en) | 1995-09-21 | 1995-09-21 | Modified illumination method in semiconductor manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950031111A KR970017947A (en) | 1995-09-21 | 1995-09-21 | Modified illumination method in semiconductor manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970017947A true KR970017947A (en) | 1997-04-30 |
Family
ID=66616199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950031111A KR970017947A (en) | 1995-09-21 | 1995-09-21 | Modified illumination method in semiconductor manufacturing method |
Country Status (1)
Country | Link |
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KR (1) | KR970017947A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100506809B1 (en) * | 1998-02-03 | 2005-10-21 | 삼성전자주식회사 | Dead-point lighting device and modified lighting method using the same |
KR101447319B1 (en) * | 2012-03-15 | 2014-10-06 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Non-planar lithography mask and system and methods |
-
1995
- 1995-09-21 KR KR1019950031111A patent/KR970017947A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100506809B1 (en) * | 1998-02-03 | 2005-10-21 | 삼성전자주식회사 | Dead-point lighting device and modified lighting method using the same |
KR101447319B1 (en) * | 2012-03-15 | 2014-10-06 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Non-planar lithography mask and system and methods |
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WITN | Withdrawal due to no request for examination |