KR970017947A - Modified illumination method in semiconductor manufacturing method - Google Patents

Modified illumination method in semiconductor manufacturing method Download PDF

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Publication number
KR970017947A
KR970017947A KR1019950031111A KR19950031111A KR970017947A KR 970017947 A KR970017947 A KR 970017947A KR 1019950031111 A KR1019950031111 A KR 1019950031111A KR 19950031111 A KR19950031111 A KR 19950031111A KR 970017947 A KR970017947 A KR 970017947A
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KR
South Korea
Prior art keywords
lens
mask
semiconductor manufacturing
modified illumination
mask surface
Prior art date
Application number
KR1019950031111A
Other languages
Korean (ko)
Inventor
김철홍
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950031111A priority Critical patent/KR970017947A/en
Publication of KR970017947A publication Critical patent/KR970017947A/en

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Abstract

본 발명은 반도체 제조 방법에 있어서, 마스크 상에 렌즈를 추가하는 변형 조명 방법에 관한 것으로서, 조리개를 통과한 광선을 이용하여 마스크 패턴을 웨이퍼에 전사하기 위한 조명방법에 있어서, 마스크 상에 렌즈를 추가하여 조명하는 것을 특징으로 한다.BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a modified illumination method for adding a lens onto a mask in a semiconductor manufacturing method, the illumination method for transferring a mask pattern onto a wafer using a light beam passing through an aperture, wherein the lens is added onto a mask. It is characterized by the lighting.

따라서, 조리개의 구경을 조절하지 않아도 빛의 세기를 저하시키지 않고 웨이퍼에 빛을 전사할 수 있는 효과를 제공한다.Thus, it is possible to transfer the light to the wafer without lowering the light intensity without adjusting the aperture diameter.

Description

반도체 제조 방법에 있어서 변형 조명 방법Modified illumination method in semiconductor manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 종래의 변형 조명 방법에서 해상력을 향상시키면서 빛의 세기를 상대적으로 저하되는 것을 막기 위하여 마스크 표면 상에 오목렌즈를 설치한 것을 보이는 도면이다,3 is a view showing that the concave lens is installed on the mask surface in order to prevent the relative decrease in light intensity while improving the resolution in the conventional modified illumination method.

제4도는 마스크 표면 상에 볼록렌즈를 설치한 것을 보이는 도면이다.4 shows the convex lens provided on the mask surface.

Claims (5)

조리개를 통과한 광선을 이용하여 마스크 패턴을 웨이퍼에 전사하기 위한 조명방법에 있어서, 마스크표면 상에 렌즈를 추가하여 조명하는 것을 특징으로 하는 변형 조명 방법.An illumination method for transferring a mask pattern onto a wafer using a light beam passing through an aperture, wherein the modified illumination method further comprises illuminating a lens on the mask surface. 제1항에 있어서, 상기 마스크 표면 상에 추가되는 렌즈는 오목렌즈로 형성됨을 특징으로 하는 변형 조명 방법.The method of claim 1, wherein the lens added on the mask surface is formed of a concave lens. 제1항에 있어서, 상기 마스크 표면 상에 추가되는 렌즈는 볼록렌즈로 형성됨을 특징으로 하는 변형 조명 방법.The method of claim 1, wherein the lens added on the mask surface is formed of a convex lens. 제1항에 있어서, 상기 마스크 표면 상에 추가되는 렌즈의 곡률은 10도 내지 90도로 형성됨을 특징으로 하는 변형 조명 방법.The method of claim 1, wherein the curvature of the lens added on the mask surface is formed between 10 degrees and 90 degrees. 제1항에 있어서, 상기 마스크 표면 상에 추가되는 렌즈에 무반사막이 형성됨을 특징으로 하는 변형 조명 방법.The method of claim 1, wherein an antireflective film is formed on the lens added on the mask surface. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950031111A 1995-09-21 1995-09-21 Modified illumination method in semiconductor manufacturing method KR970017947A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950031111A KR970017947A (en) 1995-09-21 1995-09-21 Modified illumination method in semiconductor manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950031111A KR970017947A (en) 1995-09-21 1995-09-21 Modified illumination method in semiconductor manufacturing method

Publications (1)

Publication Number Publication Date
KR970017947A true KR970017947A (en) 1997-04-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950031111A KR970017947A (en) 1995-09-21 1995-09-21 Modified illumination method in semiconductor manufacturing method

Country Status (1)

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KR (1) KR970017947A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100506809B1 (en) * 1998-02-03 2005-10-21 삼성전자주식회사 Dead-point lighting device and modified lighting method using the same
KR101447319B1 (en) * 2012-03-15 2014-10-06 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Non-planar lithography mask and system and methods

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100506809B1 (en) * 1998-02-03 2005-10-21 삼성전자주식회사 Dead-point lighting device and modified lighting method using the same
KR101447319B1 (en) * 2012-03-15 2014-10-06 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Non-planar lithography mask and system and methods

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