KR930016361A - 부분 결정성 저융점 유리 - Google Patents

부분 결정성 저융점 유리 Download PDF

Info

Publication number
KR930016361A
KR930016361A KR1019930000111A KR930000111A KR930016361A KR 930016361 A KR930016361 A KR 930016361A KR 1019930000111 A KR1019930000111 A KR 1019930000111A KR 930000111 A KR930000111 A KR 930000111A KR 930016361 A KR930016361 A KR 930016361A
Authority
KR
South Korea
Prior art keywords
glass
low melting
melting glass
crystalline low
partially crystalline
Prior art date
Application number
KR1019930000111A
Other languages
English (en)
Other versions
KR950014693B1 (ko
Inventor
구니노리 오까모도
세이이찌 나까가와
이. 테일러 배리
모또히꼬 쓰찌야
Original Assignee
미리암 디. 메코너헤이
이. 아이. 듀우판 드 네모아 앤드 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미리암 디. 메코너헤이, 이. 아이. 듀우판 드 네모아 앤드 캄파니 filed Critical 미리암 디. 메코너헤이
Publication of KR930016361A publication Critical patent/KR930016361A/ko
Application granted granted Critical
Publication of KR950014693B1 publication Critical patent/KR950014693B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/253—Silica-free oxide glass compositions containing germanium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • C03C3/074—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/14—Silica-free oxide glass compositions containing boron
    • C03C3/142—Silica-free oxide glass compositions containing boron containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Glass Compositions (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

필수적으로 PbO, ZnO, B2O3, GeO2및 임의로는 SiO2, SnO2및 금속 산화물 착색제로 이루어지는 결정성 저융점 유리가 제공된다.

Description

부분 결정성 저융점 유리
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (5)

  1. PbO 31-49중량%, ZnO 35-50중량%, B2O315-20중량%, GeO20.1-10중량%, SiO20-9.9중량%, SnO20-3중량% 및 금속 산화물 착색제 0-3중량%로 필수적으로 이루어지는 결정성 저융점 유리.
  2. 제1항에 있어서, GeO3및 SiO2의 혼합물 2-10중량%를 함유하는 유리.
  3. 휘발성 용매 중에 용해된 유기 중합체로 이루어지는 유기 매질 중에 분산된 제1항에 따른 유리의 미분 입자로 이루어지는 후막 페이스트.
  4. 제1항에 따른 유리 조성물과 화학양론적으로 동등한 금속 산화물의 혼합의 미분 입자로 이루어지는 후막 페이스트.
  5. 제1항에 있어서, 500-600℃의 온도로 가열함으로써 부분적으로 결정화되는 유리.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930000111A 1992-01-08 1993-01-07 부분 결정성 저융점 유리 KR950014693B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP04001601A JP3105979B2 (ja) 1992-01-08 1992-01-08 厚膜電子回路のカバーコート用結晶性低融点ガラス
JP92-001601 1992-01-08

Publications (2)

Publication Number Publication Date
KR930016361A true KR930016361A (ko) 1993-08-26
KR950014693B1 KR950014693B1 (ko) 1995-12-13

Family

ID=11506024

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930000111A KR950014693B1 (ko) 1992-01-08 1993-01-07 부분 결정성 저융점 유리

Country Status (3)

Country Link
JP (1) JP3105979B2 (ko)
KR (1) KR950014693B1 (ko)
DE (1) DE69300110T2 (ko)

Also Published As

Publication number Publication date
DE69300110T2 (de) 1995-10-26
KR950014693B1 (ko) 1995-12-13
JPH07300337A (ja) 1995-11-14
JP3105979B2 (ja) 2000-11-06
DE69300110D1 (de) 1995-05-24

Similar Documents

Publication Publication Date Title
KR830004173A (ko) 유리질을 부분적으로 제거한 자기
KR910009577A (ko) 결정질 유리 및 이들의 후막 조성물
KR870003944A (ko) 스트론튬 알루미노실리케이트 유리기판의 플랫패널형 표시기
KR910006165A (ko) 서미스터 조성물
KR920017964A (ko) 붕규산 유리 조성물
KR920004304A (ko) 다층세라믹 패케이지용 저유전성 무기조성물
KR900001610A (ko) 고굴절율의 포토크로믹 유리
KR840006180A (ko) 신속하게 탈색되는 광변호성 유리조성물
KR920016364A (ko) 음극 광선관 표면판용 유리
KR970042349A (ko) 산화제2구리를 포함하는 알루미늄인산염 유리들
KR830006129A (ko) 플루오로 포스페이트 유백색 유리
KR940009084A (ko) 유리조성물
KR850004453A (ko) 붕규산염 유리조성물
KR880003842A (ko) 몰리브데늄 금속에 시일링(sealing)되는 유리
KR910015502A (ko) 저온 밀봉 유리 조성물
GB1388777A (en) Glass compositions and cathode-ray tubes made therefrom
KR930013877A (ko) 후막 레지스터 조성물
KR930016361A (ko) 부분 결정성 저융점 유리
KR920019687A (ko) 봉입재 조성물
KR830005063A (ko) 텔레비죤관 면판용 저액상선(Low Liquidus) 유리조성물
JPS55126548A (en) Glass for bead
KR880000498A (ko) 후막필름 저항기 조성물
KR920016366A (ko) 부분 결정성 유리 조성물
KR880002208A (ko) 유리 세라믹 유전체 조성물 및 그것의 필름과 무정형 알루미노보로 실리케이트유리 프릿
KR920016368A (ko) 부분 결정성 유리 조성물

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19981001

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee