KR930009314B1 - 열전도성 복합재 - Google Patents

열전도성 복합재 Download PDF

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Publication number
KR930009314B1
KR930009314B1 KR1019900009277A KR900009277A KR930009314B1 KR 930009314 B1 KR930009314 B1 KR 930009314B1 KR 1019900009277 A KR1019900009277 A KR 1019900009277A KR 900009277 A KR900009277 A KR 900009277A KR 930009314 B1 KR930009314 B1 KR 930009314B1
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South Korea
Prior art keywords
thermally conductive
thermally
sheet
conductive composite
metal
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Expired - Fee Related
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KR1019900009277A
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English (en)
Korean (ko)
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KR910011448A (ko
Inventor
야수유키 나까무라
켄지 히라노
Original Assignee
스미토모 토크슈 킨조크 가부시기가이샤
아오야기 테쓰오
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Publication of KR910011448A publication Critical patent/KR910011448A/ko
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Publication of KR930009314B1 publication Critical patent/KR930009314B1/ko
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    • H—ELECTRICITY
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
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    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826—Group VIB metal-base component
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    • Y10T428/1291—Next to Co-, Cu-, or Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/12917—Next to Fe-base component

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Conductive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Resistance Heating (AREA)
  • Laminated Bodies (AREA)
KR1019900009277A 1989-12-12 1990-06-20 열전도성 복합재 Expired - Fee Related KR930009314B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP323283 1989-12-12
JP1-323283 1989-12-12
JP32328389 1989-12-12

Publications (2)

Publication Number Publication Date
KR910011448A KR910011448A (ko) 1991-08-07
KR930009314B1 true KR930009314B1 (ko) 1993-09-27

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KR1019900009277A Expired - Fee Related KR930009314B1 (ko) 1989-12-12 1990-06-20 열전도성 복합재

Country Status (5)

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US (1) US5106433A (enExample)
EP (2) EP0634794B1 (enExample)
KR (1) KR930009314B1 (enExample)
AT (2) ATE142371T1 (enExample)
DE (2) DE69028378T2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100217422B1 (ko) * 1996-12-19 1999-09-01 윤종용 교환기의 데이터 베이스 생성 방법
KR100217424B1 (ko) * 1996-12-23 1999-09-01 윤종용 사설교환기와 외부 장치간의 정합 방법

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DK0509860T3 (da) * 1991-03-27 1996-06-24 Seb Sa Genstand dannet ud fra en plade af et forholdsvis blødt metallisk materiale, og beholder til madlavning, som udgøres af en sådan genstand
DE69217810T2 (de) * 1991-10-12 1997-10-09 Sumitomo Spec Metals Verfahren zur Herstellung eines warmleitenden Materials
US5156923A (en) * 1992-01-06 1992-10-20 Texas Instruments Incorporated Heat-transferring circuit substrate with limited thermal expansion and method for making
US5480496A (en) * 1994-03-29 1996-01-02 Reynolds Metals Company Method of making twin roll cast clad material using drag cast liner stock and article produced thereby
JPH09312361A (ja) * 1996-05-22 1997-12-02 Hitachi Metals Ltd 電子部品用複合材料およびその製造方法
JP2907186B2 (ja) 1997-05-19 1999-06-21 日本電気株式会社 半導体装置、その製造方法
US6129993A (en) * 1998-02-13 2000-10-10 Hitachi Metals, Ltd. Heat spreader and method of making the same
US6326685B1 (en) * 1998-05-04 2001-12-04 Agere Systems Guardian Corp. Low thermal expansion composite comprising bodies of negative CTE material disposed within a positive CTE matrix
JP4030200B2 (ja) * 1998-09-17 2008-01-09 株式会社ルネサステクノロジ 半導体パッケージおよびその製造方法
US6221507B1 (en) * 1999-04-06 2001-04-24 Lockhart Industries High temperature laminated structural panels and method of producing the same
ATE281303T1 (de) 2000-01-26 2004-11-15 Nippon Metal Ind Verfahren zur herstellung eines metallbleches mit einer feinen verbundstruktur, und hergestelltes metallblech
US6647310B1 (en) * 2000-05-30 2003-11-11 Advanced Micro Devices, Inc. Temperature control of an integrated circuit
US6786233B1 (en) * 2001-02-23 2004-09-07 Schwing America, Inc. Boom utilizing composite material construction
EP1406298A1 (en) * 2002-10-03 2004-04-07 Kabushiki Kaisha Toyota Jidoshokki Semiconductor module and plate-shaped lead
US7527090B2 (en) * 2003-06-30 2009-05-05 Intel Corporation Heat dissipating device with preselected designed interface for thermal interface materials
CN100435324C (zh) * 2004-12-20 2008-11-19 半导体元件工业有限责任公司 具有增强散热性的半导体封装结构
CA2609252C (en) * 2005-05-23 2012-01-10 Neomax Materials Co., Ltd. Cu-mo substrate and method for producing same
US7960032B2 (en) * 2005-05-24 2011-06-14 Demers Joseph R High thermal conductivity, high yield strength, metal composite and method
US10611124B2 (en) * 2015-10-06 2020-04-07 Fourté International SDN. BHD Multiple layered alloy/non alloy clad materials and methods of manufacture
JP6458759B2 (ja) * 2016-03-31 2019-01-30 日立金属株式会社 応力緩和構造体及び熱電変換モジュール
JP6455896B1 (ja) * 2017-11-18 2019-01-23 Jfe精密株式会社 放熱板及びその製造方法
CN112776432A (zh) * 2019-11-05 2021-05-11 宝武特种冶金有限公司 一种低膨胀高导热复合金属材料、其制备方法及应用
CN111849428B (zh) * 2020-06-18 2021-11-05 上海大陆天瑞激光表面工程有限公司 一种热界面材料
CN115312473B (zh) * 2021-05-06 2025-10-03 苏州锝耀电子有限公司 双向瞬态电压抑制器件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4025997A (en) * 1975-12-23 1977-05-31 International Telephone & Telegraph Corporation Ceramic mounting and heat sink device
US4283464A (en) * 1979-05-08 1981-08-11 Norman Hascoe Prefabricated composite metallic heat-transmitting plate unit
US4427993A (en) * 1980-11-21 1984-01-24 General Electric Company Thermal stress relieving bimetallic plate
JPS6027151A (ja) * 1983-07-25 1985-02-12 Sumitomo Electric Ind Ltd 半導体素子搭載用複合金属条
US4811166A (en) * 1986-07-02 1989-03-07 Texas Instruments Incorporated Heat dissipating member for mounting a semiconductor device and electrical circuit unit incorporating the member
JPH02231751A (ja) * 1989-03-03 1990-09-13 Sumitomo Special Metals Co Ltd リードフレーム用材料

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100217422B1 (ko) * 1996-12-19 1999-09-01 윤종용 교환기의 데이터 베이스 생성 방법
KR100217424B1 (ko) * 1996-12-23 1999-09-01 윤종용 사설교환기와 외부 장치간의 정합 방법

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DE69028378D1 (de) 1996-10-10
EP0634794A2 (en) 1995-01-18
EP0634794B1 (en) 1999-07-28
DE69028378T2 (de) 1997-03-06
ATE142371T1 (de) 1996-09-15
EP0432867A3 (en) 1991-08-21
DE69033226T2 (de) 2000-02-17
ATE182720T1 (de) 1999-08-15
EP0432867A2 (en) 1991-06-19
KR910011448A (ko) 1991-08-07
DE69033226D1 (de) 1999-09-02
US5106433A (en) 1992-04-21
EP0432867B1 (en) 1996-09-04
EP0634794A3 (enExample) 1995-02-15

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